JPS56111227A - Laser working device with projection method using iris diaphragm - Google Patents

Laser working device with projection method using iris diaphragm

Info

Publication number
JPS56111227A
JPS56111227A JP1372980A JP1372980A JPS56111227A JP S56111227 A JPS56111227 A JP S56111227A JP 1372980 A JP1372980 A JP 1372980A JP 1372980 A JP1372980 A JP 1372980A JP S56111227 A JPS56111227 A JP S56111227A
Authority
JP
Japan
Prior art keywords
defect
iris diaphragm
size
image
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1372980A
Other languages
Japanese (ja)
Other versions
JPS625335B2 (en
Inventor
Takeoki Miyauchi
Mikio Hongo
Susumu Aiuchi
Masao Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1372980A priority Critical patent/JPS56111227A/en
Publication of JPS56111227A publication Critical patent/JPS56111227A/en
Publication of JPS625335B2 publication Critical patent/JPS625335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laser Beam Processing (AREA)

Abstract

PURPOSE:To make it possible to work on a defect on a photomask without affecting the adjacent areas, by measuring the size L of the workpiece pattern and adjusting the iris diaphragm to a level (w) determined by the laser beam output P and L. CONSTITUTION:The laser beam 2 proceeds through an iris diaphragm 4 having two pairs of slit whose position and width are exchangeable independently to each other and through a lens 5 where automatic focusing 17 is performed, and the reduced image of the iris diaphragm is formed on a defect 7 on a photomask 6. An image control part 10 emits to a display device 11 two sets of electronic lines which are adjustable independently, and the position and the size of the defect is measured by the signal intervals L of the position of the lines surrounding the defect image 14 and the magnification (k) of the image. Then the table 16 is operated according to the informations thus obtained to align the light axis to the center of the defect. The size of the iris diaphragm to be obtained and adjusted 3 is determined 18 by the measured size L and the preliminarily fixed laser beam output P. With such an arrangement, every process is performed automatically and the precise work can be performed according to the size of the workpiece, without affecting the adjacent areas.
JP1372980A 1980-02-08 1980-02-08 Laser working device with projection method using iris diaphragm Granted JPS56111227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1372980A JPS56111227A (en) 1980-02-08 1980-02-08 Laser working device with projection method using iris diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1372980A JPS56111227A (en) 1980-02-08 1980-02-08 Laser working device with projection method using iris diaphragm

Publications (2)

Publication Number Publication Date
JPS56111227A true JPS56111227A (en) 1981-09-02
JPS625335B2 JPS625335B2 (en) 1987-02-04

Family

ID=11841321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1372980A Granted JPS56111227A (en) 1980-02-08 1980-02-08 Laser working device with projection method using iris diaphragm

Country Status (1)

Country Link
JP (1) JPS56111227A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04251687A (en) * 1991-01-23 1992-09-08 Fanuc Ltd Laser beam controller
US5670067A (en) * 1993-08-04 1997-09-23 Fujitsu Limited Apparatus for laser cutting wiring in accordance with a measured size of the wiring
US6678304B2 (en) 2000-08-22 2004-01-13 Nec Corporation Laser correction method and apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5456370A (en) * 1977-10-14 1979-05-07 Hitachi Ltd Mask pattern correcting method and mask pattern correcting device used for said method
JPS54105968A (en) * 1978-02-08 1979-08-20 Toshiba Corp Defect corrector for pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5456370A (en) * 1977-10-14 1979-05-07 Hitachi Ltd Mask pattern correcting method and mask pattern correcting device used for said method
JPS54105968A (en) * 1978-02-08 1979-08-20 Toshiba Corp Defect corrector for pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04251687A (en) * 1991-01-23 1992-09-08 Fanuc Ltd Laser beam controller
US5670067A (en) * 1993-08-04 1997-09-23 Fujitsu Limited Apparatus for laser cutting wiring in accordance with a measured size of the wiring
US6678304B2 (en) 2000-08-22 2004-01-13 Nec Corporation Laser correction method and apparatus

Also Published As

Publication number Publication date
JPS625335B2 (en) 1987-02-04

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