JPS62142370A - Manufacture of optical semiconductor device - Google Patents

Manufacture of optical semiconductor device

Info

Publication number
JPS62142370A
JPS62142370A JP60283928A JP28392885A JPS62142370A JP S62142370 A JPS62142370 A JP S62142370A JP 60283928 A JP60283928 A JP 60283928A JP 28392885 A JP28392885 A JP 28392885A JP S62142370 A JPS62142370 A JP S62142370A
Authority
JP
Japan
Prior art keywords
beam
groove
projected
linear
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60283928A
Other versions
JPH065778B2 (en
Inventor
Yukimi Ichikawa
Takeshige Ichimura
Original Assignee
Fuji Electric Corp Res & Dev Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corp Res & Dev Ltd filed Critical Fuji Electric Corp Res & Dev Ltd
Priority to JP60283928A priority Critical patent/JPH065778B2/en
Publication of JPS62142370A publication Critical patent/JPS62142370A/en
Publication of JPH065778B2 publication Critical patent/JPH065778B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE: To improve processing speed strikingly in comparison with the case where a groove is machined by sweeping a spotted laser beam, by forming a linear beam from high-energy short-wavelength laser light through an optical system, and machining a groove in each layer of an optical semiconductor device.
CONSTITUTION: Light is projected on a film forming substrate 1 from a lateral discharge type excimer laser 2 utilizing ArF or KrF, XeCl and the like. The energy distribution of ultraviolet laser light 3 from said laser is uniform in the lateral direction and forms a Gaussian distribution in the longitudinal direction. The light is converted into a linear laser beam 6 by using two circular cylinder lenses 4 having two curved surfaces and a flat mirror 5. The beam 6 is projected on the film forming substrate 1. The projected part is cut and a groove can be formed in the film in a linear shape. Then the projection is stopped, and the film forming substrate 1 is moved in the direction of an arrow 7 by the required amount. The beam is projected again by the same way, and the linear groove is formed. By repeating this procedure, the machining of strip shaped thin films can be carried out efficiently on the large-area substrate.
COPYRIGHT: (C)1987,JPO&Japio
JP60283928A 1985-12-17 1985-12-17 Method of manufacturing an optical semiconductor device Expired - Fee Related JPH065778B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60283928A JPH065778B2 (en) 1985-12-17 1985-12-17 Method of manufacturing an optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60283928A JPH065778B2 (en) 1985-12-17 1985-12-17 Method of manufacturing an optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS62142370A true JPS62142370A (en) 1987-06-25
JPH065778B2 JPH065778B2 (en) 1994-01-19

Family

ID=17672025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60283928A Expired - Fee Related JPH065778B2 (en) 1985-12-17 1985-12-17 Method of manufacturing an optical semiconductor device

Country Status (1)

Country Link
JP (1) JPH065778B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02187342A (en) * 1989-01-13 1990-07-23 Canon Inc Ink jet recording head
JPH02198857A (en) * 1989-01-28 1990-08-07 Canon Inc Manufacture of ink-jet recording head and ink-jet recording head manufactured through said method
US5849043A (en) * 1992-03-26 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Apparatus for laser ion doping
US7303980B2 (en) 1995-07-25 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712568A (en) * 1980-06-02 1982-01-22 Rca Corp Method of producing solar battery
JPS5794482A (en) * 1980-12-05 1982-06-11 Hitachi Ltd Pattern forming device by laser
JPS6070722A (en) * 1983-09-26 1985-04-22 Rikagaku Kenkyusho Laser cvd method and device thereof
JPS61105885A (en) * 1984-10-29 1986-05-23 Semiconductor Energy Lab Co Ltd Photo-processing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712568A (en) * 1980-06-02 1982-01-22 Rca Corp Method of producing solar battery
JPS5794482A (en) * 1980-12-05 1982-06-11 Hitachi Ltd Pattern forming device by laser
JPS6070722A (en) * 1983-09-26 1985-04-22 Rikagaku Kenkyusho Laser cvd method and device thereof
JPS61105885A (en) * 1984-10-29 1986-05-23 Semiconductor Energy Lab Co Ltd Photo-processing

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02187342A (en) * 1989-01-13 1990-07-23 Canon Inc Ink jet recording head
JPH02198857A (en) * 1989-01-28 1990-08-07 Canon Inc Manufacture of ink-jet recording head and ink-jet recording head manufactured through said method
US5849043A (en) * 1992-03-26 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Apparatus for laser ion doping
US6358784B1 (en) 1992-03-26 2002-03-19 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6655767B2 (en) 1992-03-26 2003-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7303980B2 (en) 1995-07-25 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and apparatus
US7452788B2 (en) 1995-07-25 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus

Also Published As

Publication number Publication date
JPH065778B2 (en) 1994-01-19

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees