KR900005591A - 반도체 소자 - Google Patents

반도체 소자 Download PDF

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Publication number
KR900005591A
KR900005591A KR1019890013200A KR890013200A KR900005591A KR 900005591 A KR900005591 A KR 900005591A KR 1019890013200 A KR1019890013200 A KR 1019890013200A KR 890013200 A KR890013200 A KR 890013200A KR 900005591 A KR900005591 A KR 900005591A
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semiconductor device
region
circuit
quantum wells
emitter
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KR1019890013200A
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KR930004716B1 (ko
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카파소 페드리코
이 조 알프레드
센 수잔타
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피터 에이.부신거
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895—Tunnel injectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7376—Resonant tunnelling transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/36—Analogue value compared with reference values simultaneously only, i.e. parallel type
    • H03M1/368—Analogue value compared with reference values simultaneously only, i.e. parallel type having a single comparator per bit, e.g. of the folding type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Analogue/Digital Conversion (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 양호한 실시예 장치 구조의 확대 개략도,
제12도는 제1도의 장치에 내장된 주파수 중배기 회로 다이어그램,
제15도는 제1도의 장치에 내장된 패리티 발생기의 다이어그램.
제18도는 제1도에 따른 3개 장치를 내장하는 다중값 논리 회로의 다이어그램.
제19도는 제1도에 따른 장치를 내장하고 있는 다중값 논리 회로.

Claims (11)

  1. 제1도전 형태와 제1조성 및 밴드 갭 특성의 갖는 에미터 영역과, 제2도전 형태와 제2조성 및 밴드캡 특성을 갖는 콜렉터 영역과 상기 애미터와, 베이스 및 콜렉터 영역에 대한 제1, 제2, 및 제3 전기적 접촉부와 상기 콜렉터 영역과 상기 에미터 영역에 대한 상기 전기 접촉부 사이의 다수의 양자웰을 구비하는 반도체 장치에 있어서, 최소한 2개의 양자웰은 상기 양자웰의 양자 역학적 상태 사이에서 상당한 양자 역학적 상호 작용이 없으며, 의도하는 장치 작동동안 상기 양자웰을 통한 공진 터널링의 퀀칭이 서로 다른 베이스-에미터 전압에서 발생되는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 양자웰은 도프된 반도체층의 재질의 열디 블로이(de broglie)파장보다 더 큰 두계를 갖는 상기 도프된 반도체 층에 의해 분리되는 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 다수의 양자웰은 상기 베이스 영역과 상기 에미터에 대한 전기적 접촉부 사이에 있는 것을 특징으로 하는 반도체 장치.
  4. 제3항에 있어서, 상기 베이스 영역에 인접하여 상기 베이스의 도핑 형태와 반대인 도핑 형태를 가지며 상기 베이스 영역의 밴드캡보다 더 넓은 밴드 캡을 갖는 영역을 구비하는 것을 특징으로 하는 반도체 장치.
  5. 제1도전 형태와 제1조성 및 밴드캡을 에미터 영역과, 제2도전 형태와 제2조성과 밴드캡을 갖는 베이스 영역과, 상기 제1도전 형태를 가지며, 제2조성 및 밴드캡 형태를 갖는 콜렉터 영역과, 상기 에미터, 베이스와 콜렉터 영역에 대한 제1, 제2 및 제3 전기적 접촉부와, 상기 콜렉터 영역과 상기 에미터 영역에 대한 정기적 접촉부 사이의 다수의 양자웰을 구비하는 상기 장치로 구성된 전기회로를 구비하는 장치에 있어서 최소한 두개의 양자웰을 양자웰의 양자 역학적 상태사이에서 상당한 양자 역학적 상호 작용이 없으며 원하는 장치 작동동안 상기 양자웰을 통한 공진 터널링의 퀀칭이 서로 다른 베이스-에미터 전압에서 발생하는 형태로 분리되는 것을 특징으로 하는 반도체 장치.
  6. 제5항에 있어서, 주파수 증배 회로와 같은 기능은 상기 회로가 실행하도록 하기 위해 상기 반도체 장치에 접속된 수단을 구비하는 것을 특징으로 하는 반도체 장치.
  7. 제5항에 있어서, 상기 회로가 파형 스크램블러와 같은 기능을 하도록 하기 위해 상기 반도체 장치에 접속된 수단을 구비하는 것을 특징으로 하는 반도체 장치.
  8. 제5항에 있어서, 상기 회로가 패리티 비트 발생 회로와 같은 기능을 하도록 하기 위해 상기 반도체 장치에 접속된 수단을 구비하는 것을 특징으로 하는 반도체 장치.
  9. 제5항에 있어서, 상기 회로가 아날로그-디지탈 변환 회로와 같은 기능을 하도록 하기 위해 상기 반도체 장치에 접속된 수단을 구비하는 것을 특징으로 하는 반도체 장치.
  10. 제5항에 있어서, 상기 회로가 다중치 논리 처리 회로와 같은 긴응을 하도록 하기 위해 상기 반도체 장치에 접속된 수단을 구비하는 것을 특징으로 하는 반도체 장치.
  11. 제5항에 있어서, 상기 회로가 메모리 유니트와 같은 기능을 하도록 하기 위해 상기 반도체 장치에 접속된 수단을 구비하는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890013200A 1988-09-14 1989-09-12 반도체소자 및 이것을 이용한 전기 회로장치 KR930004716B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/244,753 US4999697A (en) 1988-09-14 1988-09-14 Sequential-quenching resonant-tunneling transistor
US244753 1988-09-14

Publications (2)

Publication Number Publication Date
KR900005591A true KR900005591A (ko) 1990-04-14
KR930004716B1 KR930004716B1 (ko) 1993-06-03

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KR1019890013200A KR930004716B1 (ko) 1988-09-14 1989-09-12 반도체소자 및 이것을 이용한 전기 회로장치

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Country Link
US (1) US4999697A (ko)
EP (1) EP0359508A3 (ko)
JP (1) JPH0642491B2 (ko)
KR (1) KR930004716B1 (ko)
CA (1) CA1299769C (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3542620B2 (ja) * 1992-09-30 2004-07-14 テキサス インスツルメンツ インコーポレイテツド 多重ピーク共鳴トンネルダイオード
USH1570H (en) * 1993-03-31 1996-08-06 The United States Of America As Represented By The Secretary Of The Army Variable lateral quantum confinement transistor
US5469163A (en) * 1993-05-24 1995-11-21 Texas Instruments Incorporated Multiple resonant tunneling circuits for positive digit range-4 base-2 to binary conversion
GB2278727B (en) * 1993-06-02 1997-04-09 Nec Corp Bipolar transistor circuit
US5869845A (en) * 1997-06-26 1999-02-09 Texas Instruments Incorporated Resonant tunneling memory
US6031256A (en) * 1999-01-05 2000-02-29 National Science Council Of Republic Of China Wide voltage operation regime double heterojunction bipolar transistor
TW440968B (en) * 2000-01-10 2001-06-16 Nat Science Council Heterojunction bipolar transistor device with sun-hat-shaped negative differential resistance characteristic
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
US7026642B2 (en) * 2003-08-27 2006-04-11 Micron Technology, Inc. Vertical tunneling transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPH07105488B2 (ja) * 1986-03-18 1995-11-13 富士通株式会社 半導体装置
GB2191035A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
US4845541A (en) * 1986-05-29 1989-07-04 Regents Of The University Of Minnesota Tunneling emitter bipolar transistor
JPH0642553B2 (ja) * 1986-06-13 1994-06-01 日本電気株式会社 共鳴トンネル・ダイオ−ド
US4849799A (en) * 1986-07-31 1989-07-18 American Telephone And Telegraph Company At&T Bell Laboratories Resonant tunneling transistor
JPS63153867A (ja) * 1986-08-04 1988-06-27 Fujitsu Ltd 共鳴トンネリング半導体装置
JPH0795675B2 (ja) * 1987-02-14 1995-10-11 富士通株式会社 比較回路
US4907196A (en) * 1987-04-28 1990-03-06 Fujitsu Limited Semiconductor memory device using resonant-tunneling transistor
US4912539A (en) * 1988-08-05 1990-03-27 The University Of Michigan Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier

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Publication number Publication date
US4999697A (en) 1991-03-12
EP0359508A3 (en) 1990-07-18
JPH0642491B2 (ja) 1994-06-01
KR930004716B1 (ko) 1993-06-03
CA1299769C (en) 1992-04-28
JPH02114536A (ja) 1990-04-26
EP0359508A2 (en) 1990-03-21

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