KR900004053B1 - 알미늄 합금상의 포토레지스트 박리 방법 - Google Patents

알미늄 합금상의 포토레지스트 박리 방법 Download PDF

Info

Publication number
KR900004053B1
KR900004053B1 KR1019870005360A KR870095360A KR900004053B1 KR 900004053 B1 KR900004053 B1 KR 900004053B1 KR 1019870005360 A KR1019870005360 A KR 1019870005360A KR 870095360 A KR870095360 A KR 870095360A KR 900004053 B1 KR900004053 B1 KR 900004053B1
Authority
KR
South Korea
Prior art keywords
gas
substrate
aluminum
aluminum alloy
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870005360A
Other languages
English (en)
Korean (ko)
Inventor
모리다까 나까무라
Original Assignee
후지쓰가부시끼가이샤
야마모도 다꾸마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰가부시끼가이샤, 야마모도 다꾸마 filed Critical 후지쓰가부시끼가이샤
Application granted granted Critical
Publication of KR900004053B1 publication Critical patent/KR900004053B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1019870005360A 1986-05-29 1987-05-29 알미늄 합금상의 포토레지스트 박리 방법 Expired KR900004053B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61124123A JPS62281331A (ja) 1986-05-29 1986-05-29 エツチング方法
JP61-124123 1986-05-29

Publications (1)

Publication Number Publication Date
KR900004053B1 true KR900004053B1 (ko) 1990-06-09

Family

ID=14877494

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019870005360A Expired KR900004053B1 (ko) 1986-05-29 1987-05-29 알미늄 합금상의 포토레지스트 박리 방법
KR1019870005360A Granted KR870011678A (ko) 1986-05-29 1987-05-29 알미늄 합금상의 포토레지스트 박리 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019870005360A Granted KR870011678A (ko) 1986-05-29 1987-05-29 알미늄 합금상의 포토레지스트 박리 방법

Country Status (5)

Country Link
US (2) US6184148B1 (https=)
EP (1) EP0247603B1 (https=)
JP (1) JPS62281331A (https=)
KR (2) KR900004053B1 (https=)
DE (1) DE3752290T2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728483B2 (ja) * 1989-02-01 1998-03-18 株式会社日立製作所 試料後処理方法と装置
US6077788A (en) * 1989-02-27 2000-06-20 Hitachi, Ltd. Method and apparatus for processing samples
US5868854A (en) 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
US6989228B2 (en) 1989-02-27 2006-01-24 Hitachi, Ltd Method and apparatus for processing samples
DE69033663T2 (de) * 1989-08-28 2001-06-21 Hitachi, Ltd. Verfahren zur Behandlung eines Aluminium enthaltenden Musters
JPH0464234A (ja) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp 配線パターンの形成方法
JP2663704B2 (ja) * 1990-10-30 1997-10-15 日本電気株式会社 Ａｌ合金の腐食防止法
KR100363340B1 (ko) * 1993-05-20 2003-02-19 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리방법
US5382316A (en) * 1993-10-29 1995-01-17 Applied Materials, Inc. Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure
FR2720855B1 (fr) * 1993-12-28 1998-03-27 Fujitsu Ltd Procédé de fabrication de fispositifs à semiconducteurs dotés d'un câblage en aluminium par exposition du substrat à une solution réactive.
US6060397A (en) * 1995-07-14 2000-05-09 Applied Materials, Inc. Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
US6080270A (en) * 1997-07-14 2000-06-27 Lam Research Corporation Compact microwave downstream plasma system
US6451217B1 (en) * 1998-06-09 2002-09-17 Speedfam-Ipec Co., Ltd. Wafer etching method
JP3170783B2 (ja) * 1998-07-09 2001-05-28 日本電気株式会社 半導体装置の配線形成方法及び製造装置
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6660646B1 (en) * 2000-09-21 2003-12-09 Northrop Grumman Corporation Method for plasma hardening photoresist in etching of semiconductor and superconductor films
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
KR100928098B1 (ko) * 2002-12-24 2009-11-24 동부일렉트로닉스 주식회사 산화막을 이용한 메탈라인 형성방법
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
KR100734778B1 (ko) 2005-08-25 2007-07-03 세메스 주식회사 플라즈마를 이용한 기판 처리 장치 및 방법
US20080061112A1 (en) * 2006-09-07 2008-03-13 Shih-Ju Liang Method for soldering charge coupled device and tooling thereof
CN102226635B (zh) * 2011-06-09 2013-02-27 四川宏普微波科技有限公司 一种微波连续冻干装置
CN102929110B (zh) * 2012-11-06 2014-03-19 中国科学院微电子研究所 一种微波激发的超临界干燥装置及方法
US10866516B2 (en) * 2016-08-05 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-compound-removing solvent and method in lithography

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112065A (en) * 1977-03-11 1978-09-30 Toshiba Corp Removing method of high molecular compound
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
JPS5852324B2 (ja) * 1979-10-11 1983-11-22 富士通株式会社 半導体装置の製造方法
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
US4370195A (en) * 1982-03-25 1983-01-25 Rca Corporation Removal of plasma etching residues
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
JPS593927A (ja) 1982-06-29 1984-01-10 Fujitsu Ltd 薄膜のエツチング方法
JPS59186326A (ja) 1983-04-06 1984-10-23 Hitachi Ltd プラズマ処理装置
JPS59210644A (ja) * 1983-05-16 1984-11-29 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置
JPS6130036A (ja) * 1984-07-23 1986-02-12 Fujitsu Ltd マイクロ波プラズマ処理装置
US4592800A (en) * 1984-11-02 1986-06-03 Oerlikon-Buhrle U.S.A. Inc. Method of inhibiting corrosion after aluminum etching
US4631105A (en) * 1985-04-22 1986-12-23 Branson International Plasma Corporation Plasma etching apparatus
US4699689A (en) * 1985-05-17 1987-10-13 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
JPH0722153B2 (ja) * 1985-09-09 1995-03-08 日本電信電話株式会社 ドライエツチング方法および装置
US4632719A (en) * 1985-09-18 1986-12-30 Varian Associates, Inc. Semiconductor etching apparatus with magnetic array and vertical shield
US4662977A (en) * 1986-05-05 1987-05-05 University Patents, Inc. Neutral particle surface alteration

Also Published As

Publication number Publication date
EP0247603A3 (en) 1988-07-20
EP0247603A2 (en) 1987-12-02
DE3752290D1 (de) 1999-09-30
KR870011678A (ko) 1987-12-26
US6486073B1 (en) 2002-11-26
EP0247603B1 (en) 1999-08-25
US6184148B1 (en) 2001-02-06
JPS62281331A (ja) 1987-12-07
DE3752290T2 (de) 2000-01-27
JPH057862B2 (https=) 1993-01-29

Similar Documents

Publication Publication Date Title
KR900004053B1 (ko) 알미늄 합금상의 포토레지스트 박리 방법
KR100255960B1 (ko) 질화 실리콘막의 uv-촉진된 건식 스트리핑 방법
US5397432A (en) Method for producing semiconductor integrated circuits and apparatus used in such method
EP0023429B1 (en) Dry etching of metal film
US4547260A (en) Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices
US6080680A (en) Method and composition for dry etching in semiconductor fabrication
KR100255401B1 (ko) 드라이에칭방법
JP4642164B2 (ja) 金属エッチング後のウェハの積層スタックの処理方法
JP3795220B2 (ja) 基板処理方法
JPH0969525A (ja) 金属配線の処理方法
JP3195066B2 (ja) ドライエッチング方法
EP0692141B1 (en) Stripping, passivation and corrosion inhibition of semiconductor substrates
JPH06177086A (ja) ドライエッチング方法及び装置
JP2558738B2 (ja) 表面処理方法
JPH0472724A (ja) ドライエッチング方法
JPH04316327A (ja) ドライエッチング装置及びチャンバの洗浄方法
JPH05102142A (ja) アルミニウム系金属パターンの形成方法
JP3278924B2 (ja) ドライエッチング方法
JP2510053B2 (ja) 半導体集積回路の製造方法およびそれに用いる製造装置
JPH05217957A (ja) 有機化合物膜の除去方法
JPH06177084A (ja) 銅又は銅を主成分とする金属膜のエッチング方法
JPH07201827A (ja) ドライエッチング方法
JPWO1992000601A1 (ja) 半導体集積回路の製造方法およびそれに用いる製造装置
JP2558738C (https=)
JPH08109474A (ja) アルミニウム薄膜の処理方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20060610

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20060610

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000