KR900002666B1 - 반도체 기억회로 - Google Patents

반도체 기억회로 Download PDF

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Publication number
KR900002666B1
KR900002666B1 KR1019860006913A KR860006913A KR900002666B1 KR 900002666 B1 KR900002666 B1 KR 900002666B1 KR 1019860006913 A KR1019860006913 A KR 1019860006913A KR 860006913 A KR860006913 A KR 860006913A KR 900002666 B1 KR900002666 B1 KR 900002666B1
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KR
South Korea
Prior art keywords
circuit
dummy
bit line
time
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860006913A
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English (en)
Korean (ko)
Other versions
KR870008319A (ko
Inventor
요오이찌 도비다
Original Assignee
미쓰비시 뎅기 가부시끼가이샤
시기 모리야
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Filing date
Publication date
Application filed by 미쓰비시 뎅기 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅기 가부시끼가이샤
Publication of KR870008319A publication Critical patent/KR870008319A/ko
Application granted granted Critical
Publication of KR900002666B1 publication Critical patent/KR900002666B1/ko
Expired legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
KR1019860006913A 1986-02-25 1986-08-21 반도체 기억회로 Expired KR900002666B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-39390 1986-02-25
JP39390 1986-02-25
JP61039390A JPS62197990A (ja) 1986-02-25 1986-02-25 半導体記憶回路

Publications (2)

Publication Number Publication Date
KR870008319A KR870008319A (ko) 1987-09-25
KR900002666B1 true KR900002666B1 (ko) 1990-04-21

Family

ID=12551676

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860006913A Expired KR900002666B1 (ko) 1986-02-25 1986-08-21 반도체 기억회로

Country Status (4)

Country Link
US (1) US4792928A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS62197990A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR900002666B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3705875A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682520B2 (ja) * 1987-07-31 1994-10-19 株式会社東芝 半導体メモリ
JPH0194592A (ja) * 1987-10-06 1989-04-13 Fujitsu Ltd 半導体メモリ
JPH07107798B2 (ja) * 1987-11-18 1995-11-15 三菱電機株式会社 ダイナミックランダムアクセスメモリにおけるセンスアンプ駆動装置およびセンスアンプ駆動方法
JP2691280B2 (ja) * 1988-05-12 1997-12-17 三菱電機株式会社 半導体記憶装置
US4975877A (en) * 1988-10-20 1990-12-04 Logic Devices Incorporated Static semiconductor memory with improved write recovery and column address circuitry
US5185721A (en) * 1988-10-31 1993-02-09 Texas Instruments Incorporated Charge-retaining signal boosting circuit and method
JPH02201797A (ja) * 1989-01-31 1990-08-09 Toshiba Corp 半導体メモリ装置
US5093654A (en) * 1989-05-17 1992-03-03 Eldec Corporation Thin-film electroluminescent display power supply system for providing regulated write voltages
KR940007000B1 (ko) * 1991-05-24 1994-08-03 삼성전자 주식회사 개선된 라이트 동작을 가지는 반도체 메모리 장치
US5339274A (en) * 1992-10-30 1994-08-16 International Business Machines Corporation Variable bitline precharge voltage sensing technique for DRAM structures
JPH0757475A (ja) * 1993-08-09 1995-03-03 Nec Corp 半導体メモリ集積回路装置
US5465232A (en) * 1994-07-15 1995-11-07 Micron Semiconductor, Inc. Sense circuit for tracking charge transfer through access transistors in a dynamic random access memory
DE69633774D1 (de) * 1996-03-29 2004-12-09 St Microelectronics Srl Referenzwortleitung und Datenlaufzeitwiedergabeschaltung, insbesondere für nichtflüssige Speicher mit hierarchischen Dekodern
US6626901B1 (en) * 1997-03-05 2003-09-30 The Trustees Of Columbia University In The City Of New York Electrothermal instrument for sealing and joining or cutting tissue
JP3327250B2 (ja) 1999-05-14 2002-09-24 日本電気株式会社 半導体記憶装置
KR100454259B1 (ko) * 2001-11-02 2004-10-26 주식회사 하이닉스반도체 모니터링회로를 가지는 반도체메모리장치
US7746717B1 (en) * 2007-09-07 2010-06-29 Xilinx, Inc. Desensitizing static random access memory (SRAM) to process variation
US9236102B2 (en) 2012-10-12 2016-01-12 Micron Technology, Inc. Apparatuses, circuits, and methods for biasing signal lines
US9042190B2 (en) * 2013-02-25 2015-05-26 Micron Technology, Inc. Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
US9672875B2 (en) 2014-01-27 2017-06-06 Micron Technology, Inc. Methods and apparatuses for providing a program voltage responsive to a voltage determination
KR102395535B1 (ko) * 2017-11-20 2022-05-10 에스케이하이닉스 주식회사 테스트 회로 블록, 이를 포함하는 저항 변화 메모리 장치 및 저항 변화 메모리 장치의 형성방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962686A (en) * 1972-05-16 1976-06-08 Nippon Electric Company Limited Memory circuit
US4247917A (en) * 1979-08-27 1981-01-27 Intel Corporation MOS Random-access memory
JPS5942399B2 (ja) * 1979-12-21 1984-10-15 株式会社日立製作所 メモリ装置
US4342102A (en) * 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
US4363111A (en) * 1980-10-06 1982-12-07 Heightley John D Dummy cell arrangement for an MOS memory
JPS5838873B2 (ja) * 1980-10-15 1983-08-25 富士通株式会社 センス回路
JPS601712B2 (ja) * 1980-12-04 1985-01-17 株式会社東芝 半導体記憶装置
US4393475A (en) * 1981-01-27 1983-07-12 Texas Instruments Incorporated Non-volatile semiconductor memory and the testing method for the same
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
JPS57195387A (en) * 1981-05-27 1982-12-01 Hitachi Ltd Data lien precharging system of memory integrated circuit
JPS5812193A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 半導体メモリ
JPS5856287A (ja) * 1981-09-29 1983-04-02 Nec Corp 半導体回路
JPS58111183A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd ダイナミツクｒａｍ集積回路装置
US4658377A (en) * 1984-07-26 1987-04-14 Texas Instruments Incorporated Dynamic memory array with segmented bit lines

Also Published As

Publication number Publication date
KR870008319A (ko) 1987-09-25
JPS62197990A (ja) 1987-09-01
JPH0568798B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-29
DE3705875A1 (de) 1987-08-27
DE3705875C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-27
US4792928A (en) 1988-12-20

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