KR900000635B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

Info

Publication number
KR900000635B1
KR900000635B1 KR1019850008857A KR850008857A KR900000635B1 KR 900000635 B1 KR900000635 B1 KR 900000635B1 KR 1019850008857 A KR1019850008857 A KR 1019850008857A KR 850008857 A KR850008857 A KR 850008857A KR 900000635 B1 KR900000635 B1 KR 900000635B1
Authority
KR
South Korea
Prior art keywords
capacitor
insulating film
gate electrode
substrate
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019850008857A
Other languages
English (en)
Korean (ko)
Other versions
KR860005447A (ko
Inventor
시즈오 사다와
Original Assignee
가부시끼가이샤 도오시바
사바 교오이찌
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바, 사바 교오이찌 filed Critical 가부시끼가이샤 도오시바
Publication of KR860005447A publication Critical patent/KR860005447A/ko
Application granted granted Critical
Publication of KR900000635B1 publication Critical patent/KR900000635B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019850008857A 1984-12-12 1985-11-27 반도체 기억장치 Expired KR900000635B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-262207 1984-12-12
JP59262207A JPS61140168A (ja) 1984-12-12 1984-12-12 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR860005447A KR860005447A (ko) 1986-07-23
KR900000635B1 true KR900000635B1 (ko) 1990-02-01

Family

ID=17372561

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008857A Expired KR900000635B1 (ko) 1984-12-12 1985-11-27 반도체 기억장치

Country Status (3)

Country Link
JP (1) JPS61140168A (enExample)
KR (1) KR900000635B1 (enExample)
DE (1) DE3543937A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184861A (ja) * 1985-02-12 1986-08-18 Matsushita Electronics Corp 半導体装置
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JP2767104B2 (ja) * 1987-03-30 1998-06-18 三菱電機株式会社 半導体装置の製造方法
JP2621181B2 (ja) * 1987-06-12 1997-06-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH0262073A (ja) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp 半導体記憶装置
JP2819520B2 (ja) * 1991-05-07 1998-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｄｒａｍセル
JPH05175452A (ja) * 1991-12-25 1993-07-13 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US6468855B2 (en) 1998-08-14 2002-10-22 Monolithic System Technology, Inc. Reduced topography DRAM cell fabricated using a modified logic process and method for operating same
US6573548B2 (en) 1998-08-14 2003-06-03 Monolithic System Technology, Inc. DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same
US6570206B1 (en) * 2000-03-29 2003-05-27 Hitachi, Ltd. Semiconductor device
US6677633B2 (en) 2002-09-24 2004-01-13 Hitachi, Ltd. Semiconductor device
DE102004043858A1 (de) * 2004-09-10 2006-03-16 Infineon Technologies Ag Verfahren zur Herstellung einer Speicherzelle, einer Speicherzellenanordnung und Speicherzellenanordnung
US7323379B2 (en) 2005-02-03 2008-01-29 Mosys, Inc. Fabrication process for increased capacitance in an embedded DRAM memory
US7538371B2 (en) 2005-09-01 2009-05-26 United Microelectronics Corp. CMOS image sensor integrated with 1-T SRAM and fabrication method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017885A (en) * 1973-10-25 1977-04-12 Texas Instruments Incorporated Large value capacitor
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置

Also Published As

Publication number Publication date
JPS61140168A (ja) 1986-06-27
KR860005447A (ko) 1986-07-23
DE3543937A1 (de) 1986-06-12
DE3543937C2 (enExample) 1989-05-24

Similar Documents

Publication Publication Date Title
US4792834A (en) Semiconductor memory device with buried layer under groove capacitor
US4794563A (en) Semiconductor memory device having a high capacitance storage capacitor
US5235199A (en) Semiconductor memory with pad electrode and bit line under stacked capacitor
US4992389A (en) Making a self aligned semiconductor device
US4873560A (en) Dynamic random access memory having buried word lines
KR900000207B1 (ko) 반도체 기억장치와 그 제조방법
US5321306A (en) Method for manufacturing a semiconductor device
US4649406A (en) Semiconductor memory device having stacked capacitor-type memory cells
KR900000181B1 (ko) 반도체 기억장치
KR930003276B1 (ko) 반도체 기억장치 및 그 제조방법
JPH01152660A (ja) 半導体記憶装置の製造方法
US5218218A (en) Semiconductor device and manufacturing method thereof
JPH0294471A (ja) 半導体記憶装置およびその製造方法
KR900000635B1 (ko) 반도체 기억장치
US4864464A (en) Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps
US5428236A (en) Semiconductor memory device having trenched capicitor
KR100195845B1 (ko) 반도체 메모리 디바이스
KR900000180B1 (ko) 반도체 기억장치의 제조방법
KR930007194B1 (ko) 반도체 장치 및 그 제조방법
US4921815A (en) Method of producing a semiconductor memory device having trench capacitors
JP2671899B2 (ja) 半導体記憶装置
US5953247A (en) Dram with dummy word lines
US20010001730A1 (en) Enhancing semiconductor structure surface area using hsg and etching
JPH0294561A (ja) 半導体記憶装置およびその製造方法
JPS60128658A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20030130

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20040202

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20040202

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000