KR900000635B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR900000635B1
KR900000635B1 KR1019850008857A KR850008857A KR900000635B1 KR 900000635 B1 KR900000635 B1 KR 900000635B1 KR 1019850008857 A KR1019850008857 A KR 1019850008857A KR 850008857 A KR850008857 A KR 850008857A KR 900000635 B1 KR900000635 B1 KR 900000635B1
Authority
KR
South Korea
Prior art keywords
capacitor
insulating film
gate electrode
substrate
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019850008857A
Other languages
English (en)
Korean (ko)
Other versions
KR860005447A (ko
Inventor
시즈오 사다와
Original Assignee
가부시끼가이샤 도오시바
사바 교오이찌
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바, 사바 교오이찌 filed Critical 가부시끼가이샤 도오시바
Publication of KR860005447A publication Critical patent/KR860005447A/ko
Application granted granted Critical
Publication of KR900000635B1 publication Critical patent/KR900000635B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019850008857A 1984-12-12 1985-11-27 반도체 기억장치 Expired KR900000635B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59262207A JPS61140168A (ja) 1984-12-12 1984-12-12 半導体記憶装置
JP59-262207 1984-12-12

Publications (2)

Publication Number Publication Date
KR860005447A KR860005447A (ko) 1986-07-23
KR900000635B1 true KR900000635B1 (ko) 1990-02-01

Family

ID=17372561

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008857A Expired KR900000635B1 (ko) 1984-12-12 1985-11-27 반도체 기억장치

Country Status (3)

Country Link
JP (1) JPS61140168A (enrdf_load_stackoverflow)
KR (1) KR900000635B1 (enrdf_load_stackoverflow)
DE (1) DE3543937A1 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184861A (ja) * 1985-02-12 1986-08-18 Matsushita Electronics Corp 半導体装置
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JP2767104B2 (ja) * 1987-03-30 1998-06-18 三菱電機株式会社 半導体装置の製造方法
JP2621181B2 (ja) * 1987-06-12 1997-06-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH0262073A (ja) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp 半導体記憶装置
JP2819520B2 (ja) * 1991-05-07 1998-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｄｒａｍセル
JPH05175452A (ja) * 1991-12-25 1993-07-13 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US6573548B2 (en) 1998-08-14 2003-06-03 Monolithic System Technology, Inc. DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same
US6468855B2 (en) 1998-08-14 2002-10-22 Monolithic System Technology, Inc. Reduced topography DRAM cell fabricated using a modified logic process and method for operating same
WO2001073846A1 (en) * 2000-03-29 2001-10-04 Hitachi, Ltd. Semiconductor device
US6677633B2 (en) 2002-09-24 2004-01-13 Hitachi, Ltd. Semiconductor device
DE102004043858A1 (de) * 2004-09-10 2006-03-16 Infineon Technologies Ag Verfahren zur Herstellung einer Speicherzelle, einer Speicherzellenanordnung und Speicherzellenanordnung
US7323379B2 (en) 2005-02-03 2008-01-29 Mosys, Inc. Fabrication process for increased capacitance in an embedded DRAM memory
US7538371B2 (en) 2005-09-01 2009-05-26 United Microelectronics Corp. CMOS image sensor integrated with 1-T SRAM and fabrication method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017885A (en) * 1973-10-25 1977-04-12 Texas Instruments Incorporated Large value capacitor
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置

Also Published As

Publication number Publication date
DE3543937C2 (enrdf_load_stackoverflow) 1989-05-24
DE3543937A1 (de) 1986-06-12
JPS61140168A (ja) 1986-06-27
KR860005447A (ko) 1986-07-23

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