KR890011498A - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR890011498A
KR890011498A KR1019880016336A KR880016336A KR890011498A KR 890011498 A KR890011498 A KR 890011498A KR 1019880016336 A KR1019880016336 A KR 1019880016336A KR 880016336 A KR880016336 A KR 880016336A KR 890011498 A KR890011498 A KR 890011498A
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KR
South Korea
Prior art keywords
microwave
processing apparatus
plasma processing
plasma
chamber
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Application number
KR1019880016336A
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English (en)
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KR960014434B1 (ko
Inventor
유우끼 하마다
야스시 사사끼
스스무 다나까
유다까 시마다
스스무 후쿠오까
Original Assignee
후세 노부로
테루 사가미 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP31120087A external-priority patent/JPH0831445B2/ja
Priority claimed from JP63127567A external-priority patent/JPH01298170A/ja
Application filed by 후세 노부로, 테루 사가미 가부시끼 가이샤 filed Critical 후세 노부로
Publication of KR890011498A publication Critical patent/KR890011498A/ko
Application granted granted Critical
Publication of KR960014434B1 publication Critical patent/KR960014434B1/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Abstract

내용 없음

Description

플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 본 발명의 제1실시예의 플라즈마 처리장치의 구성을 나타낸 설명도.
제2도는, 본 발명에서 진공 용기에 875 가우스의 자계를 발생시킨 개소를 나타낸 설명도.
제3도 및 제4도는, 본 발명에서 진공 용기에 있어서의 875 가우스의 자계 발생개소와 반사파 발생율 및 에칭 균일성과의 관계를 나타낸 그래프.

Claims (7)

  1. 마이크로파를 플라즈마 발생실(15)에 도입된 반응가스에 조사하여 플라즈마를 발생시키고, 이 플라즈마에 의하여 반응실(16)에 형성된 피처리체에 소정의 처리를 실시하는 플라즈마처리장치에 있어서, 상기 플라즈마 발생실(15)에 대하여 상기 반응실(16)에로의 피처리제와 대향하는 개구변을 전면 개구하고, 또한 플라즈마 발생실(15)의 상기 마이크로파 도입면과 상기 개구변과의 간격을 마이크로파의 1/2파장의 정수배로 설정한 것을 특징으로 하는 플라즈마 처리장치.
  2. 제1항에 있어서, 피처리체가 형성된 서셉터(22)에 흐르는 전류(Is)를 검출하고, 이 서셉터 전류(Is)가 최대로 되도록 마이크로파 공급계와 플라즈마 발생부 사이에 형성된 튜너(36)를 튜닝 제어하는 것인 플라즈마 처리장치.
  3. 제2항에 있어서, 마이크로파 발생부와 진공용기(14)와의 사이의 마이크로파 전달 경로에 형성된 튜너(36)와, 진공용기(14)의 서셉터(22)에 바이어스 전압을 인가하여, 이 서셉터(22)에 흐르는 전류(Is)를 검출하는 전류 검출수단과, 검출된 서셉터 전류(Is)가 최대값으로 되도록 상기 튜너(36)를 튜닝 제어하는 제어수단과, 를 포함하고 진공 용기(14)와 마이크로파 전송경로와를 자동적으로 매칭시키는 것인 플라즈마 처리장치.
  4. 제1항에 있어서, 방전실(38)직전의 도파관(32)에 마이크로파의 파장 조정 수단을 형성하고 있는 플라즈마 처리장치.
  5. 제2항에 있어서, 마이크로파 발진기(11)와 진공 용기(14)와를 테이퍼형 도파관(13)으로 접속한 것인 플라즈마 처리장치.
  6. 제1항에 있어서, 반응 가스를 다른 부분에 방출하는 가스 방출관(510A), (510B)을 적어도 2개를 갖고, 또한 그의 일부의 가스 방출관을 피처리계의 설치위치의 근방에 배치되는 반응가스 공급관을, 반응실(16)내에 형성하고 있는 플라즈마 처리장치.
  7. 제1항에 있어서, 마이크로파 발생원에서 발생시킨 마이크로파(604)를 플라즈마 발생실쪽에 전달시키는 마이크로파 전달 수단에, 마이크로파(604)의 통과로의 길이를 가변하여 공진 상태로 조정하는 공진 조정수단을 설치하고 있는 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016336A 1987-12-09 1988-12-08 플라즈마 처리장치 KR960014434B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP31120087A JPH0831445B2 (ja) 1987-12-09 1987-12-09 プラズマ処理装置
JP62-311200 1987-12-09
JP311200 1987-12-09
JP63127567A JPH01298170A (ja) 1988-05-25 1988-05-25 Ｅｃｒプラズマ処理装置
JP63-127567 1988-05-25
JP127567 1988-05-25

Publications (2)

Publication Number Publication Date
KR890011498A true KR890011498A (ko) 1989-08-14
KR960014434B1 KR960014434B1 (ko) 1996-10-15

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Application Number Title Priority Date Filing Date
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Country Status (2)

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US (1) US4970435A (ko)
KR (1) KR960014434B1 (ko)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2631199B1 (fr) * 1988-05-09 1991-03-15 Centre Nat Rech Scient Reacteur a plasma
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
JPH03193880A (ja) * 1989-08-03 1991-08-23 Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのマイクロ波プラズマｃｖｄによる高速成膜方法及びその装置
US5196670A (en) * 1989-10-03 1993-03-23 University Of Cincinnati Magnetic plasma producing device with adjustable resonance plane
JPH03122273A (ja) * 1989-10-06 1991-05-24 Hitachi Ltd マイクロ波を用いた成膜装置
DE4010663C2 (de) * 1990-04-03 1998-07-23 Leybold Ag Vorrichtung und Verfahren zur plasmagestützten Beschichtung von Werkstücken
US5804033A (en) * 1990-09-26 1998-09-08 Hitachi, Ltd. Microwave plasma processing method and apparatus
DE69123808T2 (de) * 1990-09-26 1997-06-26 Hitachi Ltd Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
US5172083A (en) * 1991-05-14 1992-12-15 Nippon Steel Corporation Microwave plasma processing apparatus
CA2102201A1 (en) * 1991-05-21 1992-11-22 Ebrahim Ghanbari Cluster tool soft etch module and ecr plasma generator therefor
JP3438785B2 (ja) * 1991-12-03 2003-08-18 東京応化工業株式会社 プラズマ処理装置及び方法
US5302803A (en) * 1991-12-23 1994-04-12 Consortium For Surface Processing, Inc. Apparatus and method for uniform microwave plasma processing using TE1101 modes
TW264601B (ko) * 1993-09-17 1995-12-01 Hitachi Seisakusyo Kk
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5869802A (en) * 1995-12-21 1999-02-09 Plasmaquest, Inc. Plasma producing structure
JP3368159B2 (ja) * 1996-11-20 2003-01-20 東京エレクトロン株式会社 プラズマ処理装置
US6200651B1 (en) * 1997-06-30 2001-03-13 Lam Research Corporation Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source
US6080270A (en) * 1997-07-14 2000-06-27 Lam Research Corporation Compact microwave downstream plasma system
JP3391245B2 (ja) * 1997-12-30 2003-03-31 株式会社島津製作所 薄膜形成装置
US6223686B1 (en) 1998-02-06 2001-05-01 Shimadzu Corporation Apparatus for forming a thin film by plasma chemical vapor deposition
US6294466B1 (en) 1998-05-01 2001-09-25 Applied Materials, Inc. HDP-CVD apparatus and process for depositing titanium films for semiconductor devices
JP2000173982A (ja) * 1998-12-01 2000-06-23 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
DE19856307C1 (de) * 1998-12-07 2000-01-13 Bosch Gmbh Robert Vorrichtung zur Erzeugung eines freien kalten Plasmastrahles
JP2000277298A (ja) * 1999-03-25 2000-10-06 Shimadzu Corp Ｅｃｒプラズマ装置
FR2792854B1 (fr) * 1999-04-29 2001-08-03 Sidel Sa Dispositif pour le depot par plasma micro-ondes d'un revetement sur un recipient en materiau thermoplastique
IL140246A (en) * 2000-12-12 2007-09-20 Pavel Dvoskin Treatment of molten metals by moving an electric arc during aggregation
JP5138131B2 (ja) * 2001-03-28 2013-02-06 忠弘 大見 マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法
IL144422A0 (en) * 2001-07-18 2002-05-23 Netanya Plasmatec Ltd Riser(s) size reduction and/or metal quality improving in gravity casting of shaped products by moving electric arc
IL145099A0 (en) * 2001-08-23 2002-06-30 Netanya Plasmatec Ltd Method and apparatus for stirring and treating continuous and semi continuous metal casting
US6983427B2 (en) * 2001-08-29 2006-01-03 Intel Corporation Generating a logic design
TWI239794B (en) * 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US6713969B2 (en) * 2002-01-31 2004-03-30 Tokyo Electron Limited Method and apparatus for determination and control of plasma state
DE10243406A1 (de) * 2002-09-18 2004-04-01 Leybold Optics Gmbh Plasmaquelle
JP2004200113A (ja) * 2002-12-20 2004-07-15 Hamamatsu Kagaku Gijutsu Kenkyu Shinkokai マイクロ波プラズマ発生装置
KR100976976B1 (ko) * 2002-12-26 2010-08-23 삼성전자주식회사 고주파 정합장치
US7122966B2 (en) * 2004-12-16 2006-10-17 General Electric Company Ion source apparatus and method
JP4576291B2 (ja) * 2005-06-06 2010-11-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
GB0516695D0 (en) * 2005-08-15 2005-09-21 Boc Group Plc Microwave plasma reactor
DE102006043943A1 (de) * 2006-09-14 2008-03-27 Leybold Optics Gmbh Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen
DE102008009624A1 (de) * 2008-02-18 2009-08-20 Cs Clean Systems Ag Verfahren und Vorrichtung zur Reinigung der Abgase einer Prozessanlage
WO2010064818A2 (ko) * 2008-12-02 2010-06-10 트리플코어스코리아 상압 플라즈마 발생 장치 및 이를 이용한 상압 플라즈마 발생 방법
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
US9526160B2 (en) * 2013-05-27 2016-12-20 Adtec Plasma Technology Co., Ltd. Cavity resonator of microwave plasma generating apparatus
US9581741B1 (en) * 2013-05-31 2017-02-28 Itn Energy Systems, Inc. Infrared control coating of thin film devices
GB2593159A (en) * 2020-03-12 2021-09-22 Univ Lancaster Method and apparatus for supplying electromagnetic power to a plasma vessel
CN114959631A (zh) * 2022-04-24 2022-08-30 北京科技大学 一种双端馈入微波电子回旋共振等离子体化学气相沉积装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3828722A (en) * 1970-05-01 1974-08-13 Cogar Corp Apparatus for producing ion-free insulating layers
US4201579A (en) * 1978-06-05 1980-05-06 Motorola, Inc. Method for removing photoresist by hydrogen plasma
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
US4423303A (en) * 1980-05-06 1983-12-27 Tokyo Shibaura Denki Kabushiki Kaisha Apparatus for treating powdery materials utilizing microwave plasma
JPS5824711A (ja) * 1981-08-05 1983-02-14 Kawasaki Heavy Ind Ltd 流動床燃焼ボイラの燃焼室構造
JPS59194407A (ja) * 1983-04-19 1984-11-05 Ulvac Corp 電子サイクロトロン共鳴形イオン源用磁石装置
JPS608622A (ja) * 1983-06-28 1985-01-17 Matsushita Electric Ind Co Ltd 風呂の制御装置
JPS6024034A (ja) * 1984-02-20 1985-02-06 Hitachi Ltd ウエハ反転装置
JPS60201641A (ja) * 1984-03-27 1985-10-12 Fujitsu Ltd ウエハの並べ換え装置
JPS61157325A (ja) * 1984-12-28 1986-07-17 Toa Nenryo Kogyo Kk 気体選択透過膜およびその製造方法
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
JPH0666292B2 (ja) * 1985-09-09 1994-08-24 株式会社日立製作所 プラズマ処理制御方法及び装置
JPS62210621A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd マイクロ波プラズマ処理方法および装置
JPS6360530A (ja) * 1986-09-01 1988-03-16 Denki Kogyo Kk マイクロ波プラズマ処理装置
JPS6373624A (ja) * 1986-09-17 1988-04-04 Hitachi Ltd 有磁場マイクロ波プラズマ処理装置
EP0284436B1 (en) * 1987-03-27 1993-07-21 Canon Kabushiki Kaisha Substrate-treating apparatus
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator

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US4970435A (en) 1990-11-13

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