KR890002732B1 - 마이크로파 프라즈마 처리방법 및 그 장치 - Google Patents

마이크로파 프라즈마 처리방법 및 그 장치 Download PDF

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Publication number
KR890002732B1
KR890002732B1 KR1019840003648A KR840003648A KR890002732B1 KR 890002732 B1 KR890002732 B1 KR 890002732B1 KR 1019840003648 A KR1019840003648 A KR 1019840003648A KR 840003648 A KR840003648 A KR 840003648A KR 890002732 B1 KR890002732 B1 KR 890002732B1
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KR
South Korea
Prior art keywords
plasma
waveguide
shielding means
microwave
processing
Prior art date
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Expired
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KR1019840003648A
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English (en)
Korean (ko)
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KR850000901A (ko
Inventor
슈조 후지무라
히로시 야노
Original Assignee
후지쓰가부시끼가이샤
야마모도 다꾸마
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Application filed by 후지쓰가부시끼가이샤, 야마모도 다꾸마 filed Critical 후지쓰가부시끼가이샤
Publication of KR850000901A publication Critical patent/KR850000901A/ko
Application granted granted Critical
Publication of KR890002732B1 publication Critical patent/KR890002732B1/ko
Expired legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
    • G02B6/06—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
KR1019840003648A 1983-07-08 1984-06-27 마이크로파 프라즈마 처리방법 및 그 장치 Expired KR890002732B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58-124511 1983-07-08
JP58124511A JPS6016424A (ja) 1983-07-08 1983-07-08 マイクロ波プラズマ処理方法及びその装置
JP124511 1983-07-08

Publications (2)

Publication Number Publication Date
KR850000901A KR850000901A (ko) 1985-03-09
KR890002732B1 true KR890002732B1 (ko) 1989-07-25

Family

ID=14887295

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840003648A Expired KR890002732B1 (ko) 1983-07-08 1984-06-27 마이크로파 프라즈마 처리방법 및 그 장치

Country Status (5)

Country Link
US (1) US4512868A (enExample)
EP (1) EP0131433B1 (enExample)
JP (1) JPS6016424A (enExample)
KR (1) KR890002732B1 (enExample)
DE (1) DE3483184D1 (enExample)

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US5364519A (en) * 1984-11-30 1994-11-15 Fujitsu Limited Microwave plasma processing process and apparatus
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置
JP2616760B2 (ja) * 1985-04-08 1997-06-04 株式会社 半導体エネルギー研究所 プラズマ気相反応装置
JPS61199038U (enExample) * 1985-05-31 1986-12-12
JPH0695500B2 (ja) * 1985-07-19 1994-11-24 富士通株式会社 マイクロ波プラズマ処理方法と装置
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US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
JPS62281331A (ja) * 1986-05-29 1987-12-07 Fujitsu Ltd エツチング方法
US4718974A (en) * 1987-01-09 1988-01-12 Ultraphase Equipment, Inc. Photoresist stripping apparatus using microwave pumped ultraviolet lamp
FR2616088B1 (fr) * 1987-06-03 1991-07-05 Rifa Sa Procede et installation pour traiter la surface d'objets
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
US4842676A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Process for etch of tungsten
JPH0777211B2 (ja) * 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4836902A (en) * 1987-10-09 1989-06-06 Northern Telecom Limited Method and apparatus for removing coating from substrate
US4859303A (en) * 1987-10-09 1989-08-22 Northern Telecom Limited Method and apparatus for removing coating from substrate
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
US4893584A (en) * 1988-03-29 1990-01-16 Energy Conversion Devices, Inc. Large area microwave plasma apparatus
US4869777A (en) * 1988-12-16 1989-09-26 Ibm Corporation Method for selectively etching the materials of a composite of two materials
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
JPH0775226B2 (ja) * 1990-04-10 1995-08-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ処理方法及び装置
DE9013937U1 (de) * 1990-10-06 1992-02-06 Röhm GmbH, 64293 Darmstadt Mikrowellenstrahler
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
JP2571956Y2 (ja) * 1991-05-16 1998-05-20 因幡電機産業株式会社 配管支持具
DE4119362A1 (de) * 1991-06-12 1992-12-17 Leybold Ag Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
DE4308990A1 (de) * 1993-03-20 1994-09-22 Bosch Gmbh Robert Ätzverfahren und Vorrichtung zur Reinigung von Halbleiterelementen, insbesondere Leistungsdioden
US5567241A (en) * 1993-04-30 1996-10-22 Energy Conversion Devices, Inc. Method and apparatus for the improved microwave deposition of thin films
JP3288490B2 (ja) * 1993-07-09 2002-06-04 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
US5498308A (en) * 1994-02-25 1996-03-12 Fusion Systems Corp. Plasma asher with microwave trap
US5783100A (en) * 1994-03-16 1998-07-21 Micron Display Technology, Inc. Method of high density plasma etching for semiconductor manufacture
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5560781A (en) * 1995-05-08 1996-10-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process for non-contact removal of organic coatings from the surface of paintings
KR100238216B1 (ko) * 1996-11-27 2000-01-15 윤종용 랑뮤일 프로브
US6026762A (en) * 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6579805B1 (en) * 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6461971B1 (en) * 2000-01-21 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method of residual resist removal after etching of aluminum alloy filmsin chlorine containing plasma
US6873113B2 (en) * 2000-04-13 2005-03-29 Tokyo Electron Limited Stand alone plasma vacuum pump
US6729850B2 (en) 2001-10-31 2004-05-04 Tokyo Electron Limited Applied plasma duct system
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7429714B2 (en) * 2003-06-20 2008-09-30 Ronal Systems Corporation Modular ICP torch assembly
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate
US7968145B2 (en) 2005-04-26 2011-06-28 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
US7910166B2 (en) * 2005-04-26 2011-03-22 First Solar, Inc. System and method for depositing a material on a substrate
KR100666881B1 (ko) * 2005-06-10 2007-01-10 삼성전자주식회사 포토레지스트 제거 방법 및 이를 이용한 반도체 소자의제조 방법.
KR100814409B1 (ko) * 2006-08-14 2008-03-18 삼성전자주식회사 애싱 방법 및 이를 수행하기 위한 장치
US8800483B2 (en) 2009-05-08 2014-08-12 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
JP5656504B2 (ja) * 2010-08-06 2015-01-21 三菱重工業株式会社 真空処理装置およびプラズマ処理方法
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US9548227B2 (en) 2013-10-30 2017-01-17 Nisene Technology Group Microwave induced plasma decapsulation using a dielectric plasma discharge tube
WO2019005288A1 (en) 2017-06-27 2019-01-03 Vandermeulen Peter F METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
KR20210094694A (ko) * 2020-01-21 2021-07-30 삼성전자주식회사 기판 처리 장치, 물질막 증착 장치, 및 상압 화학 기상 증착 장치
WO2021183373A1 (en) 2020-03-13 2021-09-16 Vandermeulen Peter F Methods and systems for medical plasma treatment and generation of plasma activated media

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US4192706A (en) * 1975-01-22 1980-03-11 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
JPS55134175A (en) * 1979-04-06 1980-10-18 Hitachi Ltd Microwave plasma etching unit
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
JPS5696840A (en) * 1979-12-28 1981-08-05 Fujitsu Ltd Microwave plasma treating method
JPS5751265A (en) * 1980-09-10 1982-03-26 Hitachi Ltd Microwave plasma etching device
JPS5776844A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Method and apparatus for processing microwave plasma
JPS58170536A (ja) * 1982-03-31 1983-10-07 Fujitsu Ltd プラズマ処理方法及びその装置
DE3376921D1 (en) * 1982-09-10 1988-07-07 Nippon Telegraph & Telephone Ion shower apparatus
JPH0770509B2 (ja) * 1982-10-08 1995-07-31 株式会社日立製作所 ドライプロセス装置

Also Published As

Publication number Publication date
DE3483184D1 (de) 1990-10-18
KR850000901A (ko) 1985-03-09
US4512868A (en) 1985-04-23
EP0131433B1 (en) 1990-09-12
EP0131433A3 (en) 1986-05-14
JPS6016424A (ja) 1985-01-28
JPH055167B2 (enExample) 1993-01-21
EP0131433A2 (en) 1985-01-16

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