JPH055167B2 - - Google Patents

Info

Publication number
JPH055167B2
JPH055167B2 JP58124511A JP12451183A JPH055167B2 JP H055167 B2 JPH055167 B2 JP H055167B2 JP 58124511 A JP58124511 A JP 58124511A JP 12451183 A JP12451183 A JP 12451183A JP H055167 B2 JPH055167 B2 JP H055167B2
Authority
JP
Japan
Prior art keywords
plasma
waveguide
shielding means
microwave
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58124511A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6016424A (ja
Inventor
Shuzo Fujimura
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58124511A priority Critical patent/JPS6016424A/ja
Priority to KR1019840003648A priority patent/KR890002732B1/ko
Priority to EP84304597A priority patent/EP0131433B1/en
Priority to DE8484304597T priority patent/DE3483184D1/de
Priority to US06/628,863 priority patent/US4512868A/en
Publication of JPS6016424A publication Critical patent/JPS6016424A/ja
Publication of JPH055167B2 publication Critical patent/JPH055167B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
    • G02B6/06—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
JP58124511A 1983-07-08 1983-07-08 マイクロ波プラズマ処理方法及びその装置 Granted JPS6016424A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58124511A JPS6016424A (ja) 1983-07-08 1983-07-08 マイクロ波プラズマ処理方法及びその装置
KR1019840003648A KR890002732B1 (ko) 1983-07-08 1984-06-27 마이크로파 프라즈마 처리방법 및 그 장치
EP84304597A EP0131433B1 (en) 1983-07-08 1984-07-05 Plasma processing apparatus
DE8484304597T DE3483184D1 (de) 1983-07-08 1984-07-05 Bearbeitungsvorrichtung mittels plasma.
US06/628,863 US4512868A (en) 1983-07-08 1984-07-09 Microwave plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58124511A JPS6016424A (ja) 1983-07-08 1983-07-08 マイクロ波プラズマ処理方法及びその装置

Publications (2)

Publication Number Publication Date
JPS6016424A JPS6016424A (ja) 1985-01-28
JPH055167B2 true JPH055167B2 (enExample) 1993-01-21

Family

ID=14887295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58124511A Granted JPS6016424A (ja) 1983-07-08 1983-07-08 マイクロ波プラズマ処理方法及びその装置

Country Status (5)

Country Link
US (1) US4512868A (enExample)
EP (1) EP0131433B1 (enExample)
JP (1) JPS6016424A (enExample)
KR (1) KR890002732B1 (enExample)
DE (1) DE3483184D1 (enExample)

Families Citing this family (60)

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JPH0627323B2 (ja) * 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
JPS6130036A (ja) * 1984-07-23 1986-02-12 Fujitsu Ltd マイクロ波プラズマ処理装置
US4554047A (en) * 1984-10-12 1985-11-19 At&T Bell Laboratories Downstream apparatus and technique
JPS61131454A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd マイクロ波プラズマ処理方法と装置
US5364519A (en) * 1984-11-30 1994-11-15 Fujitsu Limited Microwave plasma processing process and apparatus
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置
JP2616760B2 (ja) * 1985-04-08 1997-06-04 株式会社 半導体エネルギー研究所 プラズマ気相反応装置
JPS61199038U (enExample) * 1985-05-31 1986-12-12
JPH0695500B2 (ja) * 1985-07-19 1994-11-24 富士通株式会社 マイクロ波プラズマ処理方法と装置
JPS6231900U (enExample) * 1985-08-09 1987-02-25
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
JPS62281331A (ja) * 1986-05-29 1987-12-07 Fujitsu Ltd エツチング方法
US4718974A (en) * 1987-01-09 1988-01-12 Ultraphase Equipment, Inc. Photoresist stripping apparatus using microwave pumped ultraviolet lamp
FR2616088B1 (fr) * 1987-06-03 1991-07-05 Rifa Sa Procede et installation pour traiter la surface d'objets
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
US4842676A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Process for etch of tungsten
JPH0777211B2 (ja) * 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4859303A (en) * 1987-10-09 1989-08-22 Northern Telecom Limited Method and apparatus for removing coating from substrate
US4836902A (en) * 1987-10-09 1989-06-06 Northern Telecom Limited Method and apparatus for removing coating from substrate
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
US4893584A (en) * 1988-03-29 1990-01-16 Energy Conversion Devices, Inc. Large area microwave plasma apparatus
US4869777A (en) * 1988-12-16 1989-09-26 Ibm Corporation Method for selectively etching the materials of a composite of two materials
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
JPH0775226B2 (ja) * 1990-04-10 1995-08-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ処理方法及び装置
DE9013937U1 (de) * 1990-10-06 1992-02-06 Röhm GmbH, 64293 Darmstadt Mikrowellenstrahler
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
JP2571956Y2 (ja) * 1991-05-16 1998-05-20 因幡電機産業株式会社 配管支持具
DE4119362A1 (de) * 1991-06-12 1992-12-17 Leybold Ag Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
DE4308990A1 (de) * 1993-03-20 1994-09-22 Bosch Gmbh Robert Ätzverfahren und Vorrichtung zur Reinigung von Halbleiterelementen, insbesondere Leistungsdioden
US5567241A (en) * 1993-04-30 1996-10-22 Energy Conversion Devices, Inc. Method and apparatus for the improved microwave deposition of thin films
JP3288490B2 (ja) * 1993-07-09 2002-06-04 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
US5498308A (en) * 1994-02-25 1996-03-12 Fusion Systems Corp. Plasma asher with microwave trap
US5783100A (en) * 1994-03-16 1998-07-21 Micron Display Technology, Inc. Method of high density plasma etching for semiconductor manufacture
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5560781A (en) * 1995-05-08 1996-10-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process for non-contact removal of organic coatings from the surface of paintings
KR100238216B1 (ko) * 1996-11-27 2000-01-15 윤종용 랑뮤일 프로브
US6026762A (en) * 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6579805B1 (en) * 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6461971B1 (en) * 2000-01-21 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method of residual resist removal after etching of aluminum alloy filmsin chlorine containing plasma
US6873113B2 (en) * 2000-04-13 2005-03-29 Tokyo Electron Limited Stand alone plasma vacuum pump
US6729850B2 (en) 2001-10-31 2004-05-04 Tokyo Electron Limited Applied plasma duct system
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7429714B2 (en) * 2003-06-20 2008-09-30 Ronal Systems Corporation Modular ICP torch assembly
US7968145B2 (en) 2005-04-26 2011-06-28 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate
US7910166B2 (en) * 2005-04-26 2011-03-22 First Solar, Inc. System and method for depositing a material on a substrate
KR100666881B1 (ko) * 2005-06-10 2007-01-10 삼성전자주식회사 포토레지스트 제거 방법 및 이를 이용한 반도체 소자의제조 방법.
KR100814409B1 (ko) * 2006-08-14 2008-03-18 삼성전자주식회사 애싱 방법 및 이를 수행하기 위한 장치
WO2010129901A2 (en) * 2009-05-08 2010-11-11 Vandermeulen Peter F Methods and systems for plasma deposition and treatment
JP5656504B2 (ja) * 2010-08-06 2015-01-21 三菱重工業株式会社 真空処理装置およびプラズマ処理方法
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US9548227B2 (en) 2013-10-30 2017-01-17 Nisene Technology Group Microwave induced plasma decapsulation using a dielectric plasma discharge tube
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US10490386B2 (en) 2017-06-27 2019-11-26 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
KR20210094694A (ko) * 2020-01-21 2021-07-30 삼성전자주식회사 기판 처리 장치, 물질막 증착 장치, 및 상압 화학 기상 증착 장치
WO2021183373A1 (en) 2020-03-13 2021-09-16 Vandermeulen Peter F Methods and systems for medical plasma treatment and generation of plasma activated media

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US4362632A (en) * 1974-08-02 1982-12-07 Lfe Corporation Gas discharge apparatus
US4192706A (en) * 1975-01-22 1980-03-11 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
JPS55134175A (en) * 1979-04-06 1980-10-18 Hitachi Ltd Microwave plasma etching unit
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
JPS5696840A (en) * 1979-12-28 1981-08-05 Fujitsu Ltd Microwave plasma treating method
JPS5751265A (en) * 1980-09-10 1982-03-26 Hitachi Ltd Microwave plasma etching device
JPS5776844A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Method and apparatus for processing microwave plasma
JPS58170536A (ja) * 1982-03-31 1983-10-07 Fujitsu Ltd プラズマ処理方法及びその装置
EP0106497B1 (en) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ion shower apparatus
JPH0770509B2 (ja) * 1982-10-08 1995-07-31 株式会社日立製作所 ドライプロセス装置

Also Published As

Publication number Publication date
JPS6016424A (ja) 1985-01-28
EP0131433B1 (en) 1990-09-12
EP0131433A3 (en) 1986-05-14
KR890002732B1 (ko) 1989-07-25
DE3483184D1 (de) 1990-10-18
US4512868A (en) 1985-04-23
EP0131433A2 (en) 1985-01-16
KR850000901A (ko) 1985-03-09

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