KR880009416A - 화학적 증기 침착방법 및 그 장치 - Google Patents

화학적 증기 침착방법 및 그 장치 Download PDF

Info

Publication number
KR880009416A
KR880009416A KR1019880000232A KR880000232A KR880009416A KR 880009416 A KR880009416 A KR 880009416A KR 1019880000232 A KR1019880000232 A KR 1019880000232A KR 880000232 A KR880000232 A KR 880000232A KR 880009416 A KR880009416 A KR 880009416A
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
tungsten
heat source
load lock
radiant heat
Prior art date
Application number
KR1019880000232A
Other languages
English (en)
Other versions
KR960008500B1 (ko
Inventor
엘·브로스 다니엘
알·레인 래리
더블유·골드스브로우 마크
엠·샘슬 제이슨
반 매스트릭트 맥스
포스터 로버트
Original Assignee
스탠리 젯·코올
배리언 어소시에이츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스탠리 젯·코올, 배리언 어소시에이츠 인코포레이티드 filed Critical 스탠리 젯·코올
Publication of KR880009416A publication Critical patent/KR880009416A/ko
Application granted granted Critical
Publication of KR960008500B1 publication Critical patent/KR960008500B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

화학적 증기 침착방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 따른 열화학적 증기 침착장치의 전체 사시도.
제 2 도는 제 1 도의 장치의 부분 단면도.
제 3 도는 제 2 도의 3-3단면을 따라 취한 단면도.

Claims (22)

  1. 반도체 웨이퍼를 웨이퍼 처리장치내에서 반도체 웨이퍼를 신속하게 가열하는 장치에 있어서, 링척과, 상기 링척을 지지하기 위한 홀더와, 창과, 방사 열원을 구비하며, 상기 창이 진공밀폐 밀봉을 구비하기 위하여 상기 홀더에 밀봉되어 있고, 상기 홀더는 진공 밀폐 밀봉을 제공하기 위하여 웨이퍼 처리장치에 밀봉되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  2. 제1항에 있어서, 상기 링척과 상기 창은 수정으로 형성된 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  3. 제1항에 있어서, 상기 홀더내에 가스를 도입하기 위한 수단을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  4. 제3항에 있어서, 반도체 웨이퍼를 상기 링척에 물리기 위한 수단을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  5. 제4항에 있어서, 상기 창은 상기 홀더의 상부에 놓이며 상기 링척은 상기 홀더의 바닥에 놓이고, 반도체 웨이퍼는 하향 링척에 물려 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  6. 제5항에 있어서, 상기 홀더를 처리장치로부터 전기적으로 절연하기 위한 수단을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  7. 제6항에 있어서, 상기 방사열원은 방사상 모양으로 배열된 다중의 텅스텐, 할로겐 등을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  8. 제7항에 있어서, 상기 방사열원은 상기 방사열원의 중앙에 절두형콘 반사기를 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  9. 제8항에 있어서, 상기 방사열원은 상기 텅스텐, 할로겐 등들 사이에 삼각형 단면을 가진 금속봉을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  10. 제9항에 있어서, 상기 급속봉, 콘 및 텅스텐, 할로겐 등은 수냉반사판에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  11. 제10항에 있어서, 상기 금속봉, 콘과 수냉 반사판을 깨끗하게 세척되어 있고 고반사물질로 도금되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  12. 제5항에 있어서, 물 온도를 측정하기 위한 고온도계 수단이 반도체 웨이퍼 밑에 장착된 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  13. 제7항에 있어서, 각각의 텅스텐, 할로겐 등 뒤의 판에 형성된 패라볼릭 반사기를 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  14. 제12항에 있어서, 상기 고온도계 수단이 상기 반도체 웨이퍼 밑의 조절가능한 가스 유동 반사기에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  15. 제5항에 있어서, 반도체 웨이퍼의 온도를 측정하기 위한 고온도계 수단이 상기 반도체 웨이퍼 위에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  16. 제7항에 있어서, 반도체 웨이퍼의 온도를 측정하기 위한 고온도계 수단이 상기 다중 텅스텐, 할로겐등의 중앙에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
  17. 반도체 웨이퍼상에 선택적으로 텅스텐의 층을 침착하는 방법에 있어서, a) 반도체 웨이퍼를 가로지르는 수소, 아르곤과 텅스텐 헥사플루라이드를 포함하는 공정가스를 유동하는 단계와, b) 반도체 웨이퍼를 뒤로부터 가열하고 이에 의해 반도체 웨이퍼의 온도가 짧은 기간내에 침착 최고 온도까지 상승시키는 단계와, c) 요구되는 침착의 두께가 달성될때까지 침착 최고 온도 범위내에 반도체 웨이퍼를 유지하는 단계를 포함하는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
  18. 제17항에 있어서, 가열하는 단계는 반도체 웨이퍼 아래로부터 가스를 유도시켜 하향 위치에서 반도체 웨이퍼를 지지하는 동안에 형성되고 반도체 웨이퍼의 위에서부터 가열되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
  19. 제18항에 있어서, 반도체를 침착 최고 온도범위에 유지하는 단계는 몇초내에 방사열원의 스위치를 반복적으로 온, 오프하여 달성되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
  20. 제19항에 있어서, 반도체 웨이퍼를 침착 최고 온도범위까지 가열하는 단계가 3분 이내에 실행되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
  21. 제20항에 있어서, 반도체 웨이퍼를 침착 최고 온도범위까지 유지하는 단계는 방사열원의 스위치가 반복적으로 0.5초 이상, 3초 이내로 온되고 0.5초 이상, 3초 이내로 오프되어 달성되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
  22. 화학적 증기 침착장치에 있어서, 반응실과, 상기 반응실과 연통하는 부하 로크실과 상기 부하 로크실과 외부환경사이에 진공 밀봉을 제공하기 위한 외부 도어수단과 상기 부하 로크실과 상기 반응실 사이에 진공 밀봉을 제공하기 위한 내부 도어수단을 포함하는 부하 로크장치와, 상기 반응실과 상기 부하 로크실을 분리되도록 철수하기 위한 진공 펌프수단과, 상기 내부 도어수단이 상기 반응실로부터 상기 부하 로크실로 통과하는 공정가스를 방지하기 위하여 개발될 때 상기 부하 로크실안으로 불활성 가스를 공급하기 위한 수단을 구비하는 것을 특징으로 하는 화학적 증기 침착장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880000232A 1987-01-15 1988-01-15 화학 증착방법 및 장치 KR960008500B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/003,516 US4796562A (en) 1985-12-03 1987-01-15 Rapid thermal cvd apparatus
US003,516 1987-01-15
US003516 1987-01-15

Publications (2)

Publication Number Publication Date
KR880009416A true KR880009416A (ko) 1988-09-15
KR960008500B1 KR960008500B1 (ko) 1996-06-26

Family

ID=21706229

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880000232A KR960008500B1 (ko) 1987-01-15 1988-01-15 화학 증착방법 및 장치

Country Status (4)

Country Link
US (1) US4796562A (ko)
EP (1) EP0276061A1 (ko)
JP (1) JP2548023B2 (ko)
KR (1) KR960008500B1 (ko)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
ES2163388T3 (es) * 1988-05-24 2002-02-01 Unaxis Balzers Ag Instalacion de vacio.
US4971929A (en) * 1988-06-30 1990-11-20 Microwave Modules & Devices, Inc. Method of making RF transistor employing dual metallization with self-aligned first metal
US4976200A (en) * 1988-12-30 1990-12-11 The United States Of America As Represented By The United States Department Of Energy Tungsten bridge for the low energy ignition of explosive and energetic materials
US5225245A (en) * 1989-12-01 1993-07-06 Kawasaki Steel Corporation Chemical vapor deposition method for forming thin film
US5180432A (en) * 1990-01-08 1993-01-19 Lsi Logic Corporation Apparatus for conducting a refractory metal deposition process
JP3194971B2 (ja) * 1990-01-08 2001-08-06 エルエスアイ ロジック コーポレーション Ｃｖｄチャンバに導入されるプロセスガスをｃｖｄチャンバへの導入前に濾過するための装置
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5252132A (en) * 1990-11-22 1993-10-12 Mitsubishi Denki Kabushiki Kaisha Apparatus for producing semiconductor film
JPH04363024A (ja) * 1990-11-30 1992-12-15 Toshiba Corp 半導体装置の製造方法
JPH04243123A (ja) * 1991-01-17 1992-08-31 Mitsubishi Electric Corp 半導体製造装置
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
JP2598353B2 (ja) * 1991-12-04 1997-04-09 アネルバ株式会社 基板処理装置、基板搬送装置及び基板交換方法
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JPH06244269A (ja) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
EP0606751B1 (en) * 1993-01-13 2002-03-06 Applied Materials, Inc. Method for depositing polysilicon films having improved uniformity and apparatus therefor
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
DE4305749A1 (de) * 1993-02-25 1994-09-01 Leybold Ag Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage
DE4305750C2 (de) * 1993-02-25 2002-03-21 Unaxis Deutschland Holding Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage
TW241375B (ko) * 1993-07-26 1995-02-21 Air Prod & Chem
US5643366A (en) * 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
US5715361A (en) * 1995-04-13 1998-02-03 Cvc Products, Inc. Rapid thermal processing high-performance multizone illuminator for wafer backside heating
KR970066703A (ko) * 1996-03-05 1997-10-13 이우복 하드 마스크 어라이너
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
US6108490A (en) * 1996-07-11 2000-08-22 Cvc, Inc. Multizone illuminator for rapid thermal processing with improved spatial resolution
US5937142A (en) * 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US6199484B1 (en) 1997-01-06 2001-03-13 The Ensign-Bickford Company Voltage-protected semiconductor bridge igniter elements
US5992326A (en) * 1997-01-06 1999-11-30 The Ensign-Bickford Company Voltage-protected semiconductor bridge igniter elements
US5763303A (en) * 1997-03-09 1998-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Rapid thermal chemical vapor deposition procedure for a self aligned, polycide contact structure
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5981920A (en) * 1997-09-12 1999-11-09 Ppg Industries Ohio, Inc. Furnace for heating glass sheets
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US6015465A (en) * 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
KR20010089376A (ko) 1998-10-29 2001-10-06 조셉 제이. 스위니 전력을 반도체 웨이퍼 프로세싱 시스템내의 제품을 통하여연결하기 위한 장치
US6108491A (en) * 1998-10-30 2000-08-22 Applied Materials, Inc. Dual surface reflector
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6395099B1 (en) 1999-02-08 2002-05-28 Micron Technology Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
US6544842B1 (en) 1999-05-01 2003-04-08 Micron Technology, Inc. Method of forming hemisphere grained silicon on a template on a semiconductor work object
EP1199378A4 (en) * 2000-03-27 2006-09-20 Mitsubishi Heavy Ind Ltd METHOD AND DEVICE FOR PRODUCING A METAL FILM
EP1311827A2 (en) * 2000-08-22 2003-05-21 Ade Corporation Ring chuck to hold 200 and 300 mm wafer
US6471830B1 (en) 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
US6455814B1 (en) 2001-11-07 2002-09-24 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
KR100483834B1 (ko) * 2003-01-06 2005-04-20 삼성전자주식회사 회전식 가열부를 구비한 급속 열처리 장치
TWI397115B (zh) * 2006-03-27 2013-05-21 Hitachi Int Electric Inc 半導體裝置的製造方法及基板處理裝置以及清潔方法
US7877895B2 (en) * 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
US20100209082A1 (en) * 2008-05-30 2010-08-19 Alta Devices, Inc. Heating lamp system
DE102010040640B4 (de) * 2010-09-13 2014-10-02 Von Ardenne Gmbh Substratbehandlungsanlage
JP5807522B2 (ja) * 2011-11-17 2015-11-10 信越半導体株式会社 エピタキシャル成長装置
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN104471104A (zh) * 2012-03-29 2015-03-25 威科Ald有限公司 用于处理基板的扫描式喷射器组件模块
JP2013229493A (ja) * 2012-04-26 2013-11-07 Sharp Corp Ｉｉｉ族窒化物半導体積層基板およびｉｉｉ族窒化物半導体電界効果トランジスタ
KR200486353Y1 (ko) * 2013-03-12 2018-05-09 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 시스템을 위한 윈도우 조립체
US10932323B2 (en) 2015-08-03 2021-02-23 Alta Devices, Inc. Reflector and susceptor assembly for chemical vapor deposition reactor

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2685124A (en) * 1951-04-30 1954-08-03 Ohio Commw Eng Co Method for hi-vac alloying and coated product
US3098763A (en) * 1961-05-29 1963-07-23 Raytheon Co Chemical reactor
US4089992A (en) * 1965-10-11 1978-05-16 International Business Machines Corporation Method for depositing continuous pinhole free silicon nitride films and products produced thereby
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals
US3384049A (en) * 1966-10-27 1968-05-21 Emil R. Capita Vapor deposition apparatus including centrifugal force substrate-holding means
US3540920A (en) * 1967-08-24 1970-11-17 Texas Instruments Inc Process of simultaneously vapor depositing silicides of chromium and titanium
US3565676A (en) * 1968-04-01 1971-02-23 Fansteel Metallurgical Corp Chemical vapor deposition method
US3594227A (en) * 1968-07-12 1971-07-20 Bell Telephone Labor Inc Method for treating semiconductor slices with gases
US3645230A (en) * 1970-03-05 1972-02-29 Hugle Ind Inc Chemical deposition apparatus
US3673983A (en) * 1970-04-27 1972-07-04 Rca Corp High capacity deposition reactor
US3669724A (en) * 1970-09-28 1972-06-13 Motorola Inc Method of vapor depositing a tungsten-tungsten oxide coating
US3697343A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4096297A (en) * 1973-11-19 1978-06-20 Raytheon Company Isotropic boron nitride and method of making same
US3916822A (en) * 1974-04-26 1975-11-04 Bell Telephone Labor Inc Chemical vapor deposition reactor
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
JPS5211175A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4123571A (en) * 1977-09-08 1978-10-31 International Business Machines Corporation Method for forming smooth self limiting and pin hole free SiC films on Si
DE2849240C2 (de) * 1978-11-13 1983-01-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung
US4276557A (en) * 1978-12-29 1981-06-30 Bell Telephone Laboratories, Incorporated Integrated semiconductor circuit structure and method for making it
US4332839A (en) * 1978-12-29 1982-06-01 Bell Telephone Laboratories, Incorporated Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide
US4391846A (en) * 1979-04-05 1983-07-05 The United States Of America As Represented By The United States Department Of Energy Method of preparing high-temperature-stable thin-film resistors
US4247579A (en) * 1979-11-30 1981-01-27 General Electric Company Method for metallizing a semiconductor element
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
US4392299A (en) * 1981-01-08 1983-07-12 Rca Corporation Method of manufacturing low resistance gates and interconnections
US4343676A (en) * 1981-03-26 1982-08-10 Rca Corporation Etching a semiconductor material and automatically stopping same
NL8101697A (nl) * 1981-04-07 1982-11-01 Philips Nv Werkwijze voor het vervaardigen van een anode en zo verkregen anode.
JPS584924A (ja) * 1981-07-01 1983-01-12 Hitachi Ltd 半導体装置の電極形成方法
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
DE3211752C2 (de) * 1982-03-30 1985-09-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung
DE3211761A1 (de) * 1982-03-30 1983-10-06 Siemens Ag Verfahren zum herstellen von integrierten mos-feldeffekttransistorschaltungen in siliziumgate-technologie mit silizid beschichteten diffusionsgebieten als niederohmige leiterbahnen
US4411734A (en) * 1982-12-09 1983-10-25 Rca Corporation Etching of tantalum silicide/doped polysilicon structures
JPS59121915A (ja) * 1982-12-28 1984-07-14 Hitachi Ltd 気相成長装置
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4470189A (en) * 1983-05-23 1984-09-11 International Business Machines Corporation Process for making polycide structures
US4540607A (en) * 1983-08-08 1985-09-10 Gould, Inc. Selective LPCVD tungsten deposition by the silicon reduction method
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition
US4532702A (en) * 1983-11-04 1985-08-06 Westinghouse Electric Corp. Method of forming conductive interconnection between vertically spaced levels in VLSI devices
US4592308A (en) * 1983-11-10 1986-06-03 Texas Instruments Incorporated Solderless MBE system
JPS60106335U (ja) * 1983-12-24 1985-07-19 株式会社島津製作所 プラズマｃｖｄ装置
JPS60162776A (ja) * 1984-02-01 1985-08-24 Matsushita Electric Ind Co Ltd プラズマ処理装置
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
US4607591A (en) * 1985-08-06 1986-08-26 Spectrum Cvd, Inc. CVD heater control circuit

Also Published As

Publication number Publication date
JP2548023B2 (ja) 1996-10-30
EP0276061A1 (en) 1988-07-27
US4796562A (en) 1989-01-10
JPS63213672A (ja) 1988-09-06
KR960008500B1 (ko) 1996-06-26

Similar Documents

Publication Publication Date Title
KR880009416A (ko) 화학적 증기 침착방법 및 그 장치
US5031229A (en) Deposition heaters
US3862397A (en) Cool wall radiantly heated reactor
US5119761A (en) Substrate heating apparatus for forming thin films on substrate surface
JPS6255931A (ja) 金属ケイ化物接点の形成方法及びそのためのスパツタリング装置
KR900006501B1 (ko) 금속박막의 선택증착방법
US2686212A (en) Electric heating apparatus
KR970005443B1 (ko) 기판의 처리방법
JPS62502823A (ja) 選択的な化学蒸着方法および装置
JPS6070177A (ja) 化学的蒸着装置
KR920000113A (ko) 수소화 알킬알루미늄을 사용함에 의한 주성분으로 알루미늄을 함유하는 금속 퇴적막의 형성방법
US5157240A (en) Deposition heaters
CN102668048A (zh) 提升辐射加热基板的冷却的设备及方法
JPS6021960B2 (ja) Ｈｇ↓１−↓ｘＣｄ↓ｘＴｅ組成層の製法
KR20100040747A (ko) 열처리 장치
US3492969A (en) Apparatus for indiffusing impurity in semiconductor members
JP2001023916A (ja) 電磁波によって物質を処理するための方法及び装置
EP0223787B1 (en) Selective chemical vapor deposition method and apparatus
US2196484A (en) Electric heating device
JP2002146540A (ja) 基板加熱装置
US4141757A (en) Uniform thermomigration utilizing sample movement
CN101136350A (zh) 制造半导体器件的方法、工具和装置
KR101431606B1 (ko) 기판 처리 장치
JPS60189927A (ja) 気相反応容器
JPH0465819A (ja) 気相成長装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010620

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee