KR880009416A - 화학적 증기 침착방법 및 그 장치 - Google Patents
화학적 증기 침착방법 및 그 장치 Download PDFInfo
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- KR880009416A KR880009416A KR1019880000232A KR880000232A KR880009416A KR 880009416 A KR880009416 A KR 880009416A KR 1019880000232 A KR1019880000232 A KR 1019880000232A KR 880000232 A KR880000232 A KR 880000232A KR 880009416 A KR880009416 A KR 880009416A
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- semiconductor wafer
- tungsten
- heat source
- load lock
- radiant heat
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- 238000000034 method Methods 0.000 title claims 9
- 238000005229 chemical vapour deposition Methods 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 claims 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 10
- 229910052721 tungsten Inorganic materials 0.000 claims 10
- 239000010937 tungsten Substances 0.000 claims 10
- 238000000151 deposition Methods 0.000 claims 9
- 230000008021 deposition Effects 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 5
- 229910052736 halogen Inorganic materials 0.000 claims 5
- 150000002367 halogens Chemical class 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 따른 열화학적 증기 침착장치의 전체 사시도.
제 2 도는 제 1 도의 장치의 부분 단면도.
제 3 도는 제 2 도의 3-3단면을 따라 취한 단면도.
Claims (22)
- 반도체 웨이퍼를 웨이퍼 처리장치내에서 반도체 웨이퍼를 신속하게 가열하는 장치에 있어서, 링척과, 상기 링척을 지지하기 위한 홀더와, 창과, 방사 열원을 구비하며, 상기 창이 진공밀폐 밀봉을 구비하기 위하여 상기 홀더에 밀봉되어 있고, 상기 홀더는 진공 밀폐 밀봉을 제공하기 위하여 웨이퍼 처리장치에 밀봉되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제1항에 있어서, 상기 링척과 상기 창은 수정으로 형성된 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제1항에 있어서, 상기 홀더내에 가스를 도입하기 위한 수단을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제3항에 있어서, 반도체 웨이퍼를 상기 링척에 물리기 위한 수단을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제4항에 있어서, 상기 창은 상기 홀더의 상부에 놓이며 상기 링척은 상기 홀더의 바닥에 놓이고, 반도체 웨이퍼는 하향 링척에 물려 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제5항에 있어서, 상기 홀더를 처리장치로부터 전기적으로 절연하기 위한 수단을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제6항에 있어서, 상기 방사열원은 방사상 모양으로 배열된 다중의 텅스텐, 할로겐 등을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제7항에 있어서, 상기 방사열원은 상기 방사열원의 중앙에 절두형콘 반사기를 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제8항에 있어서, 상기 방사열원은 상기 텅스텐, 할로겐 등들 사이에 삼각형 단면을 가진 금속봉을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제9항에 있어서, 상기 급속봉, 콘 및 텅스텐, 할로겐 등은 수냉반사판에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제10항에 있어서, 상기 금속봉, 콘과 수냉 반사판을 깨끗하게 세척되어 있고 고반사물질로 도금되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제5항에 있어서, 물 온도를 측정하기 위한 고온도계 수단이 반도체 웨이퍼 밑에 장착된 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제7항에 있어서, 각각의 텅스텐, 할로겐 등 뒤의 판에 형성된 패라볼릭 반사기를 포함하는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제12항에 있어서, 상기 고온도계 수단이 상기 반도체 웨이퍼 밑의 조절가능한 가스 유동 반사기에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제5항에 있어서, 반도체 웨이퍼의 온도를 측정하기 위한 고온도계 수단이 상기 반도체 웨이퍼 위에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 제7항에 있어서, 반도체 웨이퍼의 온도를 측정하기 위한 고온도계 수단이 상기 다중 텅스텐, 할로겐등의 중앙에 장착되어 있는 것을 특징으로 하는 반도체 웨이퍼를 신속하게 가열하는 장치.
- 반도체 웨이퍼상에 선택적으로 텅스텐의 층을 침착하는 방법에 있어서, a) 반도체 웨이퍼를 가로지르는 수소, 아르곤과 텅스텐 헥사플루라이드를 포함하는 공정가스를 유동하는 단계와, b) 반도체 웨이퍼를 뒤로부터 가열하고 이에 의해 반도체 웨이퍼의 온도가 짧은 기간내에 침착 최고 온도까지 상승시키는 단계와, c) 요구되는 침착의 두께가 달성될때까지 침착 최고 온도 범위내에 반도체 웨이퍼를 유지하는 단계를 포함하는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
- 제17항에 있어서, 가열하는 단계는 반도체 웨이퍼 아래로부터 가스를 유도시켜 하향 위치에서 반도체 웨이퍼를 지지하는 동안에 형성되고 반도체 웨이퍼의 위에서부터 가열되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
- 제18항에 있어서, 반도체를 침착 최고 온도범위에 유지하는 단계는 몇초내에 방사열원의 스위치를 반복적으로 온, 오프하여 달성되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
- 제19항에 있어서, 반도체 웨이퍼를 침착 최고 온도범위까지 가열하는 단계가 3분 이내에 실행되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
- 제20항에 있어서, 반도체 웨이퍼를 침착 최고 온도범위까지 유지하는 단계는 방사열원의 스위치가 반복적으로 0.5초 이상, 3초 이내로 온되고 0.5초 이상, 3초 이내로 오프되어 달성되는 것을 특징으로 하는 반도체 웨이퍼상에 선택적으로 텅스텐층을 침착하는 방법.
- 화학적 증기 침착장치에 있어서, 반응실과, 상기 반응실과 연통하는 부하 로크실과 상기 부하 로크실과 외부환경사이에 진공 밀봉을 제공하기 위한 외부 도어수단과 상기 부하 로크실과 상기 반응실 사이에 진공 밀봉을 제공하기 위한 내부 도어수단을 포함하는 부하 로크장치와, 상기 반응실과 상기 부하 로크실을 분리되도록 철수하기 위한 진공 펌프수단과, 상기 내부 도어수단이 상기 반응실로부터 상기 부하 로크실로 통과하는 공정가스를 방지하기 위하여 개발될 때 상기 부하 로크실안으로 불활성 가스를 공급하기 위한 수단을 구비하는 것을 특징으로 하는 화학적 증기 침착장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US003,516 | 1987-01-15 | ||
US07/003,516 US4796562A (en) | 1985-12-03 | 1987-01-15 | Rapid thermal cvd apparatus |
US003516 | 1987-01-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880009416A true KR880009416A (ko) | 1988-09-15 |
KR960008500B1 KR960008500B1 (ko) | 1996-06-26 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019880000232A KR960008500B1 (ko) | 1987-01-15 | 1988-01-15 | 화학 증착방법 및 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4796562A (ko) |
EP (1) | EP0276061A1 (ko) |
JP (1) | JP2548023B2 (ko) |
KR (1) | KR960008500B1 (ko) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
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KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
ES2163388T3 (es) * | 1988-05-24 | 2002-02-01 | Unaxis Balzers Ag | Instalacion de vacio. |
US4971929A (en) * | 1988-06-30 | 1990-11-20 | Microwave Modules & Devices, Inc. | Method of making RF transistor employing dual metallization with self-aligned first metal |
US4976200A (en) * | 1988-12-30 | 1990-12-11 | The United States Of America As Represented By The United States Department Of Energy | Tungsten bridge for the low energy ignition of explosive and energetic materials |
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-
1987
- 1987-01-15 US US07/003,516 patent/US4796562A/en not_active Expired - Lifetime
-
1988
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- 1988-01-13 JP JP63003937A patent/JP2548023B2/ja not_active Expired - Fee Related
- 1988-01-15 KR KR1019880000232A patent/KR960008500B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0276061A1 (en) | 1988-07-27 |
JP2548023B2 (ja) | 1996-10-30 |
KR960008500B1 (ko) | 1996-06-26 |
JPS63213672A (ja) | 1988-09-06 |
US4796562A (en) | 1989-01-10 |
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