KR880003445A - 고체촬상장치 - Google Patents

고체촬상장치 Download PDF

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Publication number
KR880003445A
KR880003445A KR870009142A KR870009142A KR880003445A KR 880003445 A KR880003445 A KR 880003445A KR 870009142 A KR870009142 A KR 870009142A KR 870009142 A KR870009142 A KR 870009142A KR 880003445 A KR880003445 A KR 880003445A
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South Korea
Prior art keywords
horizontal
ccd
pixel signals
section
numbered pixel
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KR870009142A
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English (en)
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KR900007052B1 (ko
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가즈히꼬 우에다
Original Assignee
이노우에 도시야
니뽕 빅터 가부시끼가이샤
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Publication of KR880003445A publication Critical patent/KR880003445A/ko
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Publication of KR900007052B1 publication Critical patent/KR900007052B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/715—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame interline transfer [FIT]

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

고체 촬상장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 및 제 2 도는 각각 본 발명 장치의 일실시예의 요부인 고체 촬상소자의 개략도 및 전하전송의 모양을 도식적으로 도시하는 도면.
제 3 도는 제 1 도에 도시하는 고체 촬상소자를 칼라 텔레비젼 카메라에 적용한 블럭계통도.
＊ 도면의 주요부분에 대한 부호의 설명
10 : 촬상부 11 : 포토다이오드
12 : 제1수직 CCD 13 : 선택스위치
14 : 축적부 15 : 제2수직 CCD
16 : 제3수직 CCD 17 : 제1수평 CCD
18 : 제2수평 CCD 22 : 고체 촬상소자
21a : 색필터 22 : 가산기
23 : 카메라회로 24 : R매트릭스회로
25 : B매트릭스회로 26 : 내지
30 : 수평 CCD S1,S2: 스위치

Claims (3)

  1. 가로 2화소주기 및 세로 2화소주기로 구성된 색필더와, 인터라인 전송형 CCD로 구성된 촬상부와, 이 촬상부에 축적된 광전하를 전송되는 2계통의 수직 CCD로부터 형성되는 축적부와, 이 촬상부에 축적된 광전하를 이 2계통의 수직 CCD에 선택적으로 전환 전송하는 선택스위치와, 이 축적부에 전송된 광전하를 독출하는 수평 CCD를 최소한 포함하는 독출수단으로 되며, 수직 블래킹 기간에, 상기 촬상부에 있어서, 홀수행째의 화소신호를 독출하여 상기한 1의 계통의 축척부에 전송하여, 게속해서 상기 촬상부에 있어서, 짝수행째의 화소신호를 독출하여 상기한 다른 계통의 축적부에 전송하여, 그후, 영상기간의 수평 블랭킹 기간에 상기 독출수단에서 이 1의 계통 및 다른 계통의 축적부로부터의 화소신호를 독립적으로 독출하는 것을 특징으로 하는 고체 촬상장치.
  2. 제 1 항에 있어서, 상기 독출수단은, 상기 홀수행째의 화소신호를 연출하는 제 1 수정 CCD와, 상기 짝수행째의 화소신호를 인출하는 제 2 수평 CCD와, 상기 제 1 수평 CCD의 출력 및 상기 제 2 수정 CCD의출력을{(수평방향 샘플링 주파수)/2}로 전환하여 각 화소신호를 독립적으로 연출하는 스위치로 되는 것을 특징으로 하는 고체 촬상장치.
  3. 제 1 항에 있어서, 상기 독출수단은, 상기 홀수행째의 화소신호를 가로방향으로 각각 독출하는 제 1 및 제 2 수명 CCD와, 상기 짝수행째의 화소신호를 가로방향으로 각각 독출하는 제 3 및 제 4 수평 CCD로 형성되는 것을 특징으로 하는 고체 촬상장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870009142A 1986-08-22 1987-08-21 고체 촬상장치 KR900007052B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP?61-196933 1986-08-22
JP196933 1986-08-22
JP61196933A JPH0644823B2 (ja) 1986-08-22 1986-08-22 固体撮像装置

Publications (2)

Publication Number Publication Date
KR880003445A true KR880003445A (ko) 1988-05-17
KR900007052B1 KR900007052B1 (ko) 1990-09-27

Family

ID=16366072

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009142A KR900007052B1 (ko) 1986-08-22 1987-08-21 고체 촬상장치

Country Status (5)

Country Link
US (1) US4837630A (ko)
EP (1) EP0258001B1 (ko)
JP (1) JPH0644823B2 (ko)
KR (1) KR900007052B1 (ko)
DE (1) DE3780536T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549641B1 (ko) * 1999-10-07 2006-02-06 후지 샤신 필름 가부시기가이샤 고체 촬상 장치

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JPH01300685A (ja) * 1988-05-27 1989-12-05 Victor Co Of Japan Ltd 固体撮像素子の駆動方法
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JP4392492B2 (ja) * 2003-06-02 2010-01-06 国立大学法人静岡大学 広ダイナミックレンジイメージセンサ
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549641B1 (ko) * 1999-10-07 2006-02-06 후지 샤신 필름 가부시기가이샤 고체 촬상 장치

Also Published As

Publication number Publication date
JPS6352591A (ja) 1988-03-05
JPH0644823B2 (ja) 1994-06-08
EP0258001A3 (en) 1989-02-22
DE3780536T2 (de) 1992-12-10
DE3780536D1 (de) 1992-08-27
KR900007052B1 (ko) 1990-09-27
EP0258001B1 (en) 1992-07-22
EP0258001A2 (en) 1988-03-02
US4837630A (en) 1989-06-06

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