KR870010391A - 집적 홀소자 - Google Patents

집적 홀소자 Download PDF

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Publication number
KR870010391A
KR870010391A KR870004114A KR870004114A KR870010391A KR 870010391 A KR870010391 A KR 870010391A KR 870004114 A KR870004114 A KR 870004114A KR 870004114 A KR870004114 A KR 870004114A KR 870010391 A KR870010391 A KR 870010391A
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South Korea
Prior art keywords
semiconductor layer
layer
contact
hall element
semiconductor
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KR870004114A
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English (en)
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라디보제 포포벽
악셀 크라우세
Original Assignee
쿠르트 토니오로, 한스 뉜리스트
엘게쩨트 란디스 운트 기르 쭈끄 악티엔게젤샤프트
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Application filed by 쿠르트 토니오로, 한스 뉜리스트, 엘게쩨트 란디스 운트 기르 쭈끄 악티엔게젤샤프트 filed Critical 쿠르트 토니오로, 한스 뉜리스트
Publication of KR870010391A publication Critical patent/KR870010391A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/066—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices field-effect magnetic sensors, e.g. magnetic transistor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hard Magnetic Materials (AREA)
  • Cosmetics (AREA)
  • Radiation-Therapy Devices (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

내용 없음

Description

집적 홀소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 몇차례 세분된 홀소자의 약도.
제3도는 복합회로에 있는 두차례 세분된 집적 수직 홀소자의 약도.
제6도는 두차례 세분된 집적 수직 홀소자의 일부 절결 단면 약도.

Claims (6)

  1. 2개의 전류단자(C1,C2) 및 2개의 센서단자(S1,S2)를 갖는 집적 홀소자에 있어서, 홀소자는 적어도 1개의 구분면에 의해 몇개의 장치(1,2,3,4)들로 세분되므로써, 센서단자(S1,S2)의 결선접점들의 중심이 1개의 동일한 구분면에 양자 공히 위치하며, 장치(1,2,3,4)들이 교대로 상하면을 뒤집어서 배치하거나 또는 정위치로 배치하고 장치(1,2,3,4)의 상부 표면이 최종적으로 모두다 반도체층(5)의 공통 표면에 높이도록 공통 반도체 표면에 병렬배치되며, 각 장치(1,2,3,4)의 각 상부 및 하부표면의 각 점들중 적어도 2개의 각각이 인접하는 장치의 맞은편에 지정된 표면의 등전위점에 전기적으로 접속되거나 또는 2개의 외부장치(1,4)들의 외부표면의 이 점들은 각각 상호간에 집속되고 그 표면에 동화된 전류단자(C1,C2)에 접속되므로써, 중심 구분면의 2개의 외부 등전위점들의 각각은 그것이 그 전압을 갖도록 2개의 센서결선(S1,S2)들중 1개의 접속되는 것을 특징으로 하는 집적 홀소자.
  2. 제1항에 있어서, 반도체층(5)은 기판(6)에 성장된 에피택시층이며, 등전위점들간의 결선들과 전류단자(C1,C2)로의 결선들은 부분적으로 기판(6)과 반도체층(5)간의 경제층에 위치한 매립층으로 구성되고 부분적으로 반도체층(5)의 표면상에 금속화의 형태로 가해지며 각 직접 확산부(7-15)를 갖는 전기 접점이 구비되며 이것에 의하여 접점 확산부(7-15)들은 반도체층(5)에 위치하며, 각각의 장치(1-4)는 절연링(16;17, 17;18)에 의해 측면으로 둘러싸이며, 기판(6)과 절연핑(16;17, 17;18)들은 모두 동이한 재료 도전형(P)의 반도체 재료로 만들어지고 반도체층(5), 매립층 및 직접 확산부(7-15)는 모두 상이한 재료 도전형(N)의 반도체 재료로 이루어지며 이것에 의하여 매립층과 접점 확산부(7-15)들은 모두 불순물 원자들로 강하게 도우핑됨을 특징으로 하는 집적홀소자.
  3. 제2항에 있어서, 전류단자 (C1 또는 C2)에 접속되어질 2개의 외측장치(2,3)들중의 1개의 점들이 매립층(a1,b1,c1,d1,a3,b3,c3,d3)들이면, 이들의 각각은 장치(2 또는 3)에 대한 단일, 공통 매립층(a1,b1,c1,d1,a3,b|3,c3,d3)을 형성하며 이 매립층은 반도체층(5)을 완전히 관통하는 깊은 확산부(20 또는 21)를 통해서 홀소자의 전류결선(c1 또는 c2)들중의 1개와 접속되어서 홀소자의 표면에 접속되며, 이것에 의하여 깊은 확산부(20,21)는 매립층과 동일한 재료 도전형(N+)의 재료로 구성되며 불순물 원자들로 유사하게 강하게 도우핑되는 것을 특징으로 하는 집적 홀소자.
  4. 제1항에 있어서, 2개의 장치(2,3)들이 있으며 이들은 거의 90°의 각도로 서로 전향되어 반도체층(5)에 배치되어 있으며, 반도체층(5)은 기판(6)에 성장된 에피택시층이며, 등전위점들간의 결선과 전류단자(C1,C2)로의 접속은 반도체층(5)의 표면에 금속화의 형태로 가해져 있고 1개의 전기접점이 각각 접점 확산부(7-12 및 25-32)에 구비되어 있으며 이것에 의하여 접점 확산부(7-12 및 25-32)는 반도체층(5)의 표면에 배치되며, 각 장치(2,3)는 절연링(23,24)에 의해 측면으로 둘러싸이며, 기판(6) 및 절연링(23,24)은 모두 동일한 재료 도전형(P)의 반도체 재료로 구성되어 있으며, 반도체층(5) 및 접점 확산부(7-12 및 25-32)는 모두 다른 재료 도전형(N)의 반도체 재료로 구성되며 이것에 의하여 접촉 확산부(7-12 및 25-32)는 모두 불순물 원자들로 강하게 도우핑되며, 장치(2 또는 3)의 각각은 2개의 접점 확산열(25;26;27;28 및 7;8;9 또는 10;11;12 및 29;30;31;32)이 구비되어 있으며 이것에 의하여 일렬의 각 접점 확산부는 반도체층의 표면에서 다른 열의 접점 확산부를 면하며, 2개의 최외측렬(25,26,27,28 또는 29,30,31,32)의 접점 확산부의 각각은 홀소자의 1개의 전류단자(C1,C2)에 접속됨을 특징으로 하는 집적 홀소자.
  5. 제1항에서 4항중의 한 항에 있어서, 반도체층(5)은 반도체층(5)과는 다른 재료 도전형인 재료(P)로 구성된 표면층(22)으로 덮혀 있음을 특징으로 하는 접적 홀소자.
  6. 제1항에서 5항중의 한 항에서 청구된 홀소자를 전류에 의해 발생된 자게(H) 측정을 전기 카운터에 이용.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR870004114A 1986-04-29 1987-04-28 집적 홀소자 KR870010391A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH01759/86-3 1986-04-29
CH1759/86A CH669068A5 (de) 1986-04-29 1986-04-29 Integrierbares hallelement.

Publications (1)

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KR870010391A true KR870010391A (ko) 1987-11-30

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US (1) US4829352A (ko)
EP (1) EP0244577B1 (ko)
JP (1) JPS6393178A (ko)
KR (1) KR870010391A (ko)
CN (1) CN1007683B (ko)
AT (1) ATE59734T1 (ko)
AU (1) AU600484B2 (ko)
CA (1) CA1263764A (ko)
CH (1) CH669068A5 (ko)
DE (1) DE3766875D1 (ko)
DK (1) DK216787A (ko)
ES (1) ES2019588B3 (ko)
FI (1) FI871526A (ko)
NO (1) NO871796L (ko)
YU (1) YU54487A (ko)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE96248T1 (de) * 1988-09-21 1993-11-15 Landis & Gyr Business Support Hallelement.
JPH02192781A (ja) * 1989-01-20 1990-07-30 Mitsubishi Electric Corp ホール素子および磁気センサシステム
JPH0390872A (ja) * 1989-09-01 1991-04-16 Toshiba Corp 半導体装置
CH683388A5 (de) * 1991-03-15 1994-02-28 Landis & Gyr Business Support Anordnung zur Eigenschaftsverbesserung von mit P/N-Uebergängen versehenen Halbleiterstrukturen.
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
EP0590222A1 (en) * 1992-09-30 1994-04-06 STMicroelectronics S.r.l. Magnetic position sensor
US5323050A (en) * 1993-06-01 1994-06-21 Motorola, Inc. Collector arrangement for magnetotransistor
JP3602611B2 (ja) * 1995-03-30 2004-12-15 株式会社東芝 横型ホール素子
US5572058A (en) * 1995-07-17 1996-11-05 Honeywell Inc. Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer
DE19857275A1 (de) * 1998-12-11 2000-06-15 Johannes V Kluge Integrierbarer Magnetfeldsensor aus Halbleitermaterial
DE10144268B4 (de) * 2001-09-08 2015-03-05 Robert Bosch Gmbh Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes
DE10150955C1 (de) * 2001-10-16 2003-06-12 Fraunhofer Ges Forschung Vertikaler Hall-Sensor
DE10150950C1 (de) * 2001-10-16 2003-06-18 Fraunhofer Ges Forschung Kompakter vertikaler Hall-Sensor
US8397883B2 (en) * 2001-10-25 2013-03-19 Lord Corporation Brake with field responsive material
US7872322B2 (en) * 2002-09-10 2011-01-18 Melexis Tessenderlo Nv Magnetic field sensor with a hall element
JP2005333103A (ja) * 2004-03-30 2005-12-02 Denso Corp 縦型ホール素子およびその製造方法
US7205622B2 (en) * 2005-01-20 2007-04-17 Honeywell International Inc. Vertical hall effect device
JP2007003237A (ja) * 2005-06-21 2007-01-11 Denso Corp 電流センサ
EP1746426B1 (de) * 2005-07-22 2019-03-06 Melexis Technologies NV Stromsensor
US8169215B2 (en) * 2006-04-13 2012-05-01 Asahi Kasei Emd Corporation Magnetic sensor and method of manufacturing thereof
US8353393B2 (en) * 2006-12-22 2013-01-15 Lord Corporation Operator interface controllable brake with field responsive material
US20080234908A1 (en) * 2007-03-07 2008-09-25 St Clair Kenneth A Operator input device for controlling a vehicle operation
CN101464479B (zh) * 2007-12-20 2012-09-26 东光东芝测量仪器株式会社 电能表
US7626377B2 (en) * 2008-02-18 2009-12-01 Honeywell International Inc. Hall-effect device with merged and/or non-merged complementary structure
US7782050B2 (en) 2008-04-11 2010-08-24 Infineon Technologies Ag Hall effect device and method
CH699933A1 (de) * 2008-11-28 2010-05-31 Melexis Technologies Sa Vertikaler Hallsensor.
US8093891B2 (en) * 2009-03-02 2012-01-10 Robert Bosch Gmbh Vertical Hall Effect sensor
DE102009027338A1 (de) * 2009-06-30 2011-01-05 Robert Bosch Gmbh Hall-Sensorelement und Verfahren zur Messung eines Magnetfelds
DE102009029528A1 (de) * 2009-09-17 2011-03-24 Robert Bosch Gmbh Integrierter Schaltkreis zur Informationsübertragung
JP5679906B2 (ja) * 2010-07-05 2015-03-04 セイコーインスツル株式会社 ホールセンサ
US8896303B2 (en) 2011-02-08 2014-11-25 Infineon Technologies Ag Low offset vertical Hall device and current spinning method
US8829900B2 (en) 2011-02-08 2014-09-09 Infineon Technologies Ag Low offset spinning current hall plate and method to operate it
US8786279B2 (en) 2011-02-25 2014-07-22 Allegro Microsystems, Llc Circuit and method for processing signals generated by a plurality of sensors
US9062990B2 (en) 2011-02-25 2015-06-23 Allegro Microsystems, Llc Circular vertical hall magnetic field sensing element and method with a plurality of continuous output signals
US8729890B2 (en) 2011-04-12 2014-05-20 Allegro Microsystems, Llc Magnetic angle and rotation speed sensor with continuous and discontinuous modes of operation based on rotation speed of a target object
US8860410B2 (en) 2011-05-23 2014-10-14 Allegro Microsystems, Llc Circuits and methods for processing a signal generated by a plurality of measuring devices
US8890518B2 (en) 2011-06-08 2014-11-18 Allegro Microsystems, Llc Arrangements for self-testing a circular vertical hall (CVH) sensing element and/or for self-testing a magnetic field sensor that uses a circular vertical hall (CVH) sensing element
DE102011107767A1 (de) * 2011-07-15 2013-01-17 Micronas Gmbh Hallsensor
US8988072B2 (en) 2011-07-21 2015-03-24 Infineon Technologies Ag Vertical hall sensor with high electrical symmetry
US9007060B2 (en) 2011-07-21 2015-04-14 Infineon Technologies Ag Electronic device with ring-connected hall effect regions
US8793085B2 (en) 2011-08-19 2014-07-29 Allegro Microsystems, Llc Circuits and methods for automatically adjusting a magnetic field sensor in accordance with a speed of rotation sensed by the magnetic field sensor
US8922206B2 (en) 2011-09-07 2014-12-30 Allegro Microsystems, Llc Magnetic field sensing element combining a circular vertical hall magnetic field sensing element with a planar hall element
US9285438B2 (en) 2011-09-28 2016-03-15 Allegro Microsystems, Llc Circuits and methods for processing signals generated by a plurality of magnetic field sensing elements
DE102011116545A1 (de) * 2011-10-21 2013-04-25 Micronas Gmbh Integrierte Magnetfeldmessvorrichtung
US8922207B2 (en) 2011-11-17 2014-12-30 Infineon Technologies Ag Electronic device comprising hall effect region with three contacts
US9046383B2 (en) 2012-01-09 2015-06-02 Allegro Microsystems, Llc Systems and methods that use magnetic field sensors to identify positions of a gear shift lever
US9312472B2 (en) 2012-02-20 2016-04-12 Infineon Technologies Ag Vertical hall device with electrical 180 degree symmetry
US9182456B2 (en) 2012-03-06 2015-11-10 Allegro Microsystems, Llc Magnetic field sensor for sensing rotation of an object
US10215550B2 (en) 2012-05-01 2019-02-26 Allegro Microsystems, Llc Methods and apparatus for magnetic sensors having highly uniform magnetic fields
US9484525B2 (en) * 2012-05-15 2016-11-01 Infineon Technologies Ag Hall effect device
CN103576101A (zh) * 2012-07-31 2014-02-12 北京嘉岳同乐极电子有限公司 一种多通道集成式磁传感器
US9606190B2 (en) 2012-12-21 2017-03-28 Allegro Microsystems, Llc Magnetic field sensor arrangements and associated methods
US9417295B2 (en) 2012-12-21 2016-08-16 Allegro Microsystems, Llc Circuits and methods for processing signals generated by a circular vertical hall (CVH) sensing element in the presence of a multi-pole magnet
US8749005B1 (en) 2012-12-21 2014-06-10 Allegro Microsystems, Llc Magnetic field sensor and method of fabricating a magnetic field sensor having a plurality of vertical hall elements arranged in at least a portion of a polygonal shape
US9548443B2 (en) 2013-01-29 2017-01-17 Allegro Microsystems, Llc Vertical Hall Effect element with improved sensitivity
US9389060B2 (en) 2013-02-13 2016-07-12 Allegro Microsystems, Llc Magnetic field sensor and related techniques that provide an angle error correction module
US9377285B2 (en) 2013-02-13 2016-06-28 Allegro Microsystems, Llc Magnetic field sensor and related techniques that provide varying current spinning phase sequences of a magnetic field sensing element
US9099638B2 (en) 2013-03-15 2015-08-04 Allegro Microsystems, Llc Vertical hall effect element with structures to improve sensitivity
KR102019514B1 (ko) * 2013-06-28 2019-11-15 매그나칩 반도체 유한회사 반도체 기반의 홀 센서
US9400164B2 (en) 2013-07-22 2016-07-26 Allegro Microsystems, Llc Magnetic field sensor and related techniques that provide an angle correction module
US9312473B2 (en) 2013-09-30 2016-04-12 Allegro Microsystems, Llc Vertical hall effect sensor
US9574867B2 (en) 2013-12-23 2017-02-21 Allegro Microsystems, Llc Magnetic field sensor and related techniques that inject an error correction signal into a signal channel to result in reduced error
US10120042B2 (en) 2013-12-23 2018-11-06 Allegro Microsystems, Llc Magnetic field sensor and related techniques that inject a synthesized error correction signal into a signal channel to result in reduced error
US9547048B2 (en) 2014-01-14 2017-01-17 Allegro Micosystems, LLC Circuit and method for reducing an offset component of a plurality of vertical hall elements arranged in a circle
US9753097B2 (en) 2014-05-05 2017-09-05 Allegro Microsystems, Llc Magnetic field sensors and associated methods with reduced offset and improved accuracy
US9425385B2 (en) 2014-05-09 2016-08-23 Infineon Technologies Ag Vertical hall effect device
US9316705B2 (en) * 2014-05-09 2016-04-19 Infineon Technologies Ag Vertical hall effect-device
US9448288B2 (en) 2014-05-20 2016-09-20 Allegro Microsystems, Llc Magnetic field sensor with improved accuracy resulting from a digital potentiometer
EP2963435B1 (en) * 2014-07-01 2017-01-25 Nxp B.V. Differential lateral magnetic field sensor system with offset cancelling and implemented using silicon-on-insulator technology
EP2966462B1 (en) 2014-07-11 2022-04-20 Senis AG Vertical hall device
GB2531536A (en) * 2014-10-21 2016-04-27 Melexis Technologies Nv Vertical hall sensors with reduced offset error
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US9638766B2 (en) 2014-11-24 2017-05-02 Allegro Microsystems, Llc Magnetic field sensor with improved accuracy resulting from a variable potentiometer and a gain circuit
US9684042B2 (en) 2015-02-27 2017-06-20 Allegro Microsystems, Llc Magnetic field sensor with improved accuracy and method of obtaining improved accuracy with a magnetic field sensor
US11163022B2 (en) 2015-06-12 2021-11-02 Allegro Microsystems, Llc Magnetic field sensor for angle detection with a phase-locked loop
US9739848B1 (en) 2016-02-01 2017-08-22 Allegro Microsystems, Llc Circular vertical hall (CVH) sensing element with sliding integration
US9739847B1 (en) 2016-02-01 2017-08-22 Allegro Microsystems, Llc Circular vertical hall (CVH) sensing element with signal processing
US10481220B2 (en) 2016-02-01 2019-11-19 Allegro Microsystems, Llc Circular vertical hall (CVH) sensing element with signal processing and arctangent function
US10385964B2 (en) 2016-06-08 2019-08-20 Allegro Microsystems, Llc Enhanced neutral gear sensor
US10585147B2 (en) 2016-06-14 2020-03-10 Allegro Microsystems, Llc Magnetic field sensor having error correction
US10739164B2 (en) 2017-01-27 2020-08-11 Allegro Microsystems, Llc Circuit for detecting motion of an object
US10495701B2 (en) 2017-03-02 2019-12-03 Allegro Microsystems, Llc Circular vertical hall (CVH) sensing element with DC offset removal
US10823586B2 (en) 2018-12-26 2020-11-03 Allegro Microsystems, Llc Magnetic field sensor having unequally spaced magnetic field sensing elements
US11280637B2 (en) 2019-11-14 2022-03-22 Allegro Microsystems, Llc High performance magnetic angle sensor
US11237020B2 (en) 2019-11-14 2022-02-01 Allegro Microsystems, Llc Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet
CN112038484B (zh) * 2020-08-25 2021-06-01 深圳市金誉半导体股份有限公司 一种双霍尔传感器及其制备方法
US11802922B2 (en) 2021-01-13 2023-10-31 Allegro Microsystems, Llc Circuit for reducing an offset component of a plurality of vertical hall elements arranged in one or more circles
US11473935B1 (en) 2021-04-16 2022-10-18 Allegro Microsystems, Llc System and related techniques that provide an angle sensor for sensing an angle of rotation of a ferromagnetic screw

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL173335C (nl) * 1972-06-01 1984-01-02 Philips Nv Hall-element.
US4141026A (en) * 1977-02-02 1979-02-20 Texas Instruments Incorporated Hall effect generator
US4253107A (en) * 1978-10-06 1981-02-24 Sprague Electric Company Integrated circuit with ion implanted hall-cell
DE3001772A1 (de) * 1980-01-18 1981-07-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
JPS5748264A (en) * 1980-08-29 1982-03-19 Rohm Co Ltd Magnetic coupler
JPS582084A (ja) * 1981-06-26 1983-01-07 Toshiba Corp ホ−ル素子装置
JPS58154263A (ja) * 1982-03-09 1983-09-13 Seiko Instr & Electronics Ltd ホ−ルｉｃ
JPS58155761A (ja) * 1982-03-10 1983-09-16 Sharp Corp ホ−ル効果半導体集積回路
DE3380004D1 (en) * 1982-03-30 1989-07-06 Fujitsu Ltd Semiconductor memory device
CH662905A5 (de) * 1983-12-19 1987-10-30 Landis & Gyr Ag Integrierbares hallelement.
CH668147A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
JPS62206889A (ja) * 1986-03-07 1987-09-11 Seiko Instr & Electronics Ltd 磁気センサ

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JPS6393178A (ja) 1988-04-23
NO871796L (no) 1987-10-30
FI871526A (fi) 1987-10-30
DK216787D0 (da) 1987-04-28
AU7210687A (en) 1987-11-05
CN87102998A (zh) 1987-11-11
ES2019588B3 (es) 1991-07-01
CA1263764A (en) 1989-12-05
EP0244577B1 (de) 1991-01-02
CH669068A5 (de) 1989-02-15
US4829352A (en) 1989-05-09
DK216787A (da) 1987-10-30
EP0244577A1 (de) 1987-11-11
AU600484B2 (en) 1990-08-16
CN1007683B (zh) 1990-04-18
ATE59734T1 (de) 1991-01-15
NO871796D0 (no) 1987-04-29
YU54487A (en) 1989-12-31
FI871526A0 (fi) 1987-04-07
DE3766875D1 (de) 1991-02-07

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