KR870009549A - 도전율 변조형 전계효과 트랜지스터의 고속 스위치-오프 회로 - Google Patents

도전율 변조형 전계효과 트랜지스터의 고속 스위치-오프 회로 Download PDF

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Publication number
KR870009549A
KR870009549A KR870002589A KR870002589A KR870009549A KR 870009549 A KR870009549 A KR 870009549A KR 870002589 A KR870002589 A KR 870002589A KR 870002589 A KR870002589 A KR 870002589A KR 870009549 A KR870009549 A KR 870009549A
Authority
KR
South Korea
Prior art keywords
transistor
electrode
terminal
electrodes
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR870002589A
Other languages
English (en)
Korean (ko)
Inventor
쥬니어 해롤드 로버트 로난
쥬니어 카알 프랭클린 휘틀리
Original Assignee
글렌 에이취. 브루스틀
알 씨 에이 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 글렌 에이취. 브루스틀, 알 씨 에이 코오포레이숀 filed Critical 글렌 에이취. 브루스틀
Publication of KR870009549A publication Critical patent/KR870009549A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
KR870002589A 1986-03-21 1987-03-21 도전율 변조형 전계효과 트랜지스터의 고속 스위치-오프 회로 Ceased KR870009549A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/842,651 US4677324A (en) 1986-03-21 1986-03-21 Fast switch-off circuit for conductivity modulated field effect transistor
US842,651 1986-03-21

Publications (1)

Publication Number Publication Date
KR870009549A true KR870009549A (ko) 1987-10-27

Family

ID=25287903

Family Applications (1)

Application Number Title Priority Date Filing Date
KR870002589A Ceased KR870009549A (ko) 1986-03-21 1987-03-21 도전율 변조형 전계효과 트랜지스터의 고속 스위치-오프 회로

Country Status (5)

Country Link
US (1) US4677324A (enExample)
JP (1) JPS62231518A (enExample)
KR (1) KR870009549A (enExample)
DE (1) DE3709149C2 (enExample)
FR (1) FR2596594B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1221251B (it) * 1988-02-25 1990-06-27 Sgs Thomson Microelectronics Circuito mos per il pilotaggio di un carico dal lato alto della alimentazione
US4831280A (en) * 1988-03-14 1989-05-16 Raytheon Company High voltage pulse generating apparatus
US4890021A (en) * 1989-01-23 1989-12-26 Honeywell Inc. Noise spike elimination circuit for pulse width modulators
US4877982A (en) * 1989-01-23 1989-10-31 Honeywell Inc. MOSFET turn-on/off circuit
DE4013997C2 (de) * 1990-05-01 1997-03-27 Walter Marks Gleichstrom-Steuerschaltung
US5138202A (en) * 1991-02-27 1992-08-11 Allied-Signal Inc. Proportional base drive circuit
DE4131783C1 (enExample) * 1991-09-24 1993-02-04 Siemens Ag, 8000 Muenchen, De
DE4303905A1 (de) * 1993-02-10 1994-08-11 Heinzinger Electronic Gmbh Schaltstufe
US5475329A (en) * 1994-01-04 1995-12-12 Texas Instruments Incorporated Turn-off circuit to provide a discharge path from a first node to a second node
US5672988A (en) * 1994-04-15 1997-09-30 Linear Technology Corporation High-speed switching regulator drive circuit
US5467047A (en) * 1994-07-15 1995-11-14 Motorola, Inc. Power transistor rapid turn off circuit for saving power
EP0703667B1 (en) * 1994-09-16 1997-06-25 STMicroelectronics S.r.l. An integrated control circuit with a level shifter for switching an electronic switch
EP0703666B1 (en) * 1994-09-16 1997-06-25 STMicroelectronics S.r.l. A control circuit with a level shifter for switching an electronic switch
DE19619399A1 (de) * 1996-05-14 1997-11-20 Telefunken Microelectron Schaltvorrichtung mit einem Leistungs-FET und einer induktiven Last
CH700697A2 (de) * 2009-03-27 2010-09-30 Eth Zuerich Schalteinrichtung mit einer kaskodeschaltung.
JP5343904B2 (ja) 2010-03-23 2013-11-13 住友電気工業株式会社 半導体装置
EP4542859A3 (en) * 2023-01-24 2025-07-02 Infineon Technologies Austria AG Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586220A (en) * 1978-12-25 1980-06-28 Hitachi Ltd Driving method for current breaking element
US4551643A (en) * 1983-10-24 1985-11-05 Rca Corporation Power switching circuitry

Also Published As

Publication number Publication date
JPH0564889B2 (enExample) 1993-09-16
DE3709149C2 (de) 1995-11-30
DE3709149A1 (de) 1987-09-24
FR2596594A1 (fr) 1987-10-02
FR2596594B1 (fr) 1992-11-13
JPS62231518A (ja) 1987-10-12
US4677324A (en) 1987-06-30

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Patent event date: 19940524

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I