FR2596594B1 - Circuit d'ouverture rapide pour transistor a effet de champ a modulation de conductivite - Google Patents

Circuit d'ouverture rapide pour transistor a effet de champ a modulation de conductivite

Info

Publication number
FR2596594B1
FR2596594B1 FR8703913A FR8703913A FR2596594B1 FR 2596594 B1 FR2596594 B1 FR 2596594B1 FR 8703913 A FR8703913 A FR 8703913A FR 8703913 A FR8703913 A FR 8703913A FR 2596594 B1 FR2596594 B1 FR 2596594B1
Authority
FR
France
Prior art keywords
field effect
effect transistor
open circuit
quick open
modulated field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8703913A
Other languages
English (en)
French (fr)
Other versions
FR2596594A1 (fr
Inventor
Harold Robert Ronan Jr
Carl Franklin Wheatley Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2596594A1 publication Critical patent/FR2596594A1/fr
Application granted granted Critical
Publication of FR2596594B1 publication Critical patent/FR2596594B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
FR8703913A 1986-03-21 1987-03-20 Circuit d'ouverture rapide pour transistor a effet de champ a modulation de conductivite Expired - Lifetime FR2596594B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/842,651 US4677324A (en) 1986-03-21 1986-03-21 Fast switch-off circuit for conductivity modulated field effect transistor

Publications (2)

Publication Number Publication Date
FR2596594A1 FR2596594A1 (fr) 1987-10-02
FR2596594B1 true FR2596594B1 (fr) 1992-11-13

Family

ID=25287903

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8703913A Expired - Lifetime FR2596594B1 (fr) 1986-03-21 1987-03-20 Circuit d'ouverture rapide pour transistor a effet de champ a modulation de conductivite

Country Status (5)

Country Link
US (1) US4677324A (enExample)
JP (1) JPS62231518A (enExample)
KR (1) KR870009549A (enExample)
DE (1) DE3709149C2 (enExample)
FR (1) FR2596594B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1221251B (it) * 1988-02-25 1990-06-27 Sgs Thomson Microelectronics Circuito mos per il pilotaggio di un carico dal lato alto della alimentazione
US4831280A (en) * 1988-03-14 1989-05-16 Raytheon Company High voltage pulse generating apparatus
US4877982A (en) * 1989-01-23 1989-10-31 Honeywell Inc. MOSFET turn-on/off circuit
US4890021A (en) * 1989-01-23 1989-12-26 Honeywell Inc. Noise spike elimination circuit for pulse width modulators
DE4013997C2 (de) * 1990-05-01 1997-03-27 Walter Marks Gleichstrom-Steuerschaltung
US5138202A (en) * 1991-02-27 1992-08-11 Allied-Signal Inc. Proportional base drive circuit
DE4131783C1 (enExample) * 1991-09-24 1993-02-04 Siemens Ag, 8000 Muenchen, De
DE4303905A1 (de) * 1993-02-10 1994-08-11 Heinzinger Electronic Gmbh Schaltstufe
US5475329A (en) * 1994-01-04 1995-12-12 Texas Instruments Incorporated Turn-off circuit to provide a discharge path from a first node to a second node
US5672988A (en) * 1994-04-15 1997-09-30 Linear Technology Corporation High-speed switching regulator drive circuit
US5467047A (en) * 1994-07-15 1995-11-14 Motorola, Inc. Power transistor rapid turn off circuit for saving power
EP0703666B1 (en) * 1994-09-16 1997-06-25 STMicroelectronics S.r.l. A control circuit with a level shifter for switching an electronic switch
DE69403965T2 (de) * 1994-09-16 1998-01-29 Sgs Thomson Microelectronics Integrierte Steuerschaltungsanordnung mit einem Pegelschieber zum Schalten eines elektronischen Schalters
DE19619399A1 (de) * 1996-05-14 1997-11-20 Telefunken Microelectron Schaltvorrichtung mit einem Leistungs-FET und einer induktiven Last
CH700697A2 (de) 2009-03-27 2010-09-30 Eth Zuerich Schalteinrichtung mit einer kaskodeschaltung.
JP5343904B2 (ja) * 2010-03-23 2013-11-13 住友電気工業株式会社 半導体装置
EP4542859A3 (en) * 2023-01-24 2025-07-02 Infineon Technologies Austria AG Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586220A (en) * 1978-12-25 1980-06-28 Hitachi Ltd Driving method for current breaking element
US4551643A (en) * 1983-10-24 1985-11-05 Rca Corporation Power switching circuitry

Also Published As

Publication number Publication date
DE3709149C2 (de) 1995-11-30
FR2596594A1 (fr) 1987-10-02
US4677324A (en) 1987-06-30
DE3709149A1 (de) 1987-09-24
JPH0564889B2 (enExample) 1993-09-16
KR870009549A (ko) 1987-10-27
JPS62231518A (ja) 1987-10-12

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Legal Events

Date Code Title Description
ST Notification of lapse