JPS62231518A - 導電率変調電界効果トランジスタの高速スイツチ・オフ回路 - Google Patents

導電率変調電界効果トランジスタの高速スイツチ・オフ回路

Info

Publication number
JPS62231518A
JPS62231518A JP62068762A JP6876287A JPS62231518A JP S62231518 A JPS62231518 A JP S62231518A JP 62068762 A JP62068762 A JP 62068762A JP 6876287 A JP6876287 A JP 6876287A JP S62231518 A JPS62231518 A JP S62231518A
Authority
JP
Japan
Prior art keywords
gate
voltage
latch
circuit
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62068762A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564889B2 (enExample
Inventor
ハロルド　ロバート　ロナン　ジユニア
カール　フランクリン　ホイートレイ　ジユニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS62231518A publication Critical patent/JPS62231518A/ja
Publication of JPH0564889B2 publication Critical patent/JPH0564889B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP62068762A 1986-03-21 1987-03-23 導電率変調電界効果トランジスタの高速スイツチ・オフ回路 Granted JPS62231518A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/842,651 US4677324A (en) 1986-03-21 1986-03-21 Fast switch-off circuit for conductivity modulated field effect transistor
US842651 1986-03-21

Publications (2)

Publication Number Publication Date
JPS62231518A true JPS62231518A (ja) 1987-10-12
JPH0564889B2 JPH0564889B2 (enExample) 1993-09-16

Family

ID=25287903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62068762A Granted JPS62231518A (ja) 1986-03-21 1987-03-23 導電率変調電界効果トランジスタの高速スイツチ・オフ回路

Country Status (5)

Country Link
US (1) US4677324A (enExample)
JP (1) JPS62231518A (enExample)
KR (1) KR870009549A (enExample)
DE (1) DE3709149C2 (enExample)
FR (1) FR2596594B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012522410A (ja) * 2009-03-27 2012-09-20 エー・テー・ハー・チューリッヒ カスコード回路を有するスイッチング装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1221251B (it) * 1988-02-25 1990-06-27 Sgs Thomson Microelectronics Circuito mos per il pilotaggio di un carico dal lato alto della alimentazione
US4831280A (en) * 1988-03-14 1989-05-16 Raytheon Company High voltage pulse generating apparatus
US4877982A (en) * 1989-01-23 1989-10-31 Honeywell Inc. MOSFET turn-on/off circuit
US4890021A (en) * 1989-01-23 1989-12-26 Honeywell Inc. Noise spike elimination circuit for pulse width modulators
DE4013997C2 (de) * 1990-05-01 1997-03-27 Walter Marks Gleichstrom-Steuerschaltung
US5138202A (en) * 1991-02-27 1992-08-11 Allied-Signal Inc. Proportional base drive circuit
DE4131783C1 (enExample) * 1991-09-24 1993-02-04 Siemens Ag, 8000 Muenchen, De
DE4303905A1 (de) * 1993-02-10 1994-08-11 Heinzinger Electronic Gmbh Schaltstufe
US5475329A (en) * 1994-01-04 1995-12-12 Texas Instruments Incorporated Turn-off circuit to provide a discharge path from a first node to a second node
US5672988A (en) * 1994-04-15 1997-09-30 Linear Technology Corporation High-speed switching regulator drive circuit
US5467047A (en) * 1994-07-15 1995-11-14 Motorola, Inc. Power transistor rapid turn off circuit for saving power
EP0703666B1 (en) * 1994-09-16 1997-06-25 STMicroelectronics S.r.l. A control circuit with a level shifter for switching an electronic switch
DE69403965T2 (de) * 1994-09-16 1998-01-29 Sgs Thomson Microelectronics Integrierte Steuerschaltungsanordnung mit einem Pegelschieber zum Schalten eines elektronischen Schalters
DE19619399A1 (de) * 1996-05-14 1997-11-20 Telefunken Microelectron Schaltvorrichtung mit einem Leistungs-FET und einer induktiven Last
JP5343904B2 (ja) * 2010-03-23 2013-11-13 住友電気工業株式会社 半導体装置
EP4542859A3 (en) * 2023-01-24 2025-07-02 Infineon Technologies Austria AG Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586220A (en) * 1978-12-25 1980-06-28 Hitachi Ltd Driving method for current breaking element
US4551643A (en) * 1983-10-24 1985-11-05 Rca Corporation Power switching circuitry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012522410A (ja) * 2009-03-27 2012-09-20 エー・テー・ハー・チューリッヒ カスコード回路を有するスイッチング装置

Also Published As

Publication number Publication date
DE3709149C2 (de) 1995-11-30
FR2596594B1 (fr) 1992-11-13
FR2596594A1 (fr) 1987-10-02
US4677324A (en) 1987-06-30
DE3709149A1 (de) 1987-09-24
JPH0564889B2 (enExample) 1993-09-16
KR870009549A (ko) 1987-10-27

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