KR870008321A - 감지동작 타이밍 검출회로를 구비한 반도체 메모리장치 - Google Patents

감지동작 타이밍 검출회로를 구비한 반도체 메모리장치

Info

Publication number
KR870008321A
KR870008321A KR1019870001759A KR870001759A KR870008321A KR 870008321 A KR870008321 A KR 870008321A KR 1019870001759 A KR1019870001759 A KR 1019870001759A KR 870001759 A KR870001759 A KR 870001759A KR 870008321 A KR870008321 A KR 870008321A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
operation timing
detection circuit
detection operation
Prior art date
Application number
KR1019870001759A
Other languages
English (en)
Other versions
KR910002500B1 (ko
Inventor
요시히로 다께마에
다께오 다떼마쓰
기미아끼 사또오
다까시 호리이
노부미 고다마
마고또 야나기사와
야스히로 다까다
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR870008321A publication Critical patent/KR870008321A/ko
Application granted granted Critical
Publication of KR910002500B1 publication Critical patent/KR910002500B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
KR1019870001759A 1986-02-28 1987-02-28 감지동작 타이밍 검출회로를 구비한 반도체 메모리장치 KR910002500B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP43084 1986-02-28
JP61043084A JPS62202398A (ja) 1986-02-28 1986-02-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR870008321A true KR870008321A (ko) 1987-09-25
KR910002500B1 KR910002500B1 (ko) 1991-04-23

Family

ID=12653970

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870001759A KR910002500B1 (ko) 1986-02-28 1987-02-28 감지동작 타이밍 검출회로를 구비한 반도체 메모리장치

Country Status (4)

Country Link
US (1) US4807193A (ko)
EP (1) EP0240156A3 (ko)
JP (1) JPS62202398A (ko)
KR (1) KR910002500B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4875191A (en) * 1988-07-21 1989-10-17 Intel Corporation Integrated read and programming row driver
US5170376A (en) * 1988-12-24 1992-12-08 Alcatel N.V. Asynchronous timing circuit for a 2-coordinate memory
US5245584A (en) * 1990-12-20 1993-09-14 Vlsi Technology, Inc. Method and apparatus for compensating for bit line delays in semiconductor memories
US5465232A (en) * 1994-07-15 1995-11-07 Micron Semiconductor, Inc. Sense circuit for tracking charge transfer through access transistors in a dynamic random access memory
EP0915476B1 (en) * 1997-11-05 2004-03-03 STMicroelectronics S.r.l. Method and circuit for regulating the length of an ATD pulse signal
DE19842852B4 (de) 1998-09-18 2005-05-19 Infineon Technologies Ag Integrierter Speicher
US7046566B1 (en) 2004-12-06 2006-05-16 Altera Corporation Voltage-based timing control of memory bit lines
US9336862B2 (en) * 2014-05-28 2016-05-10 Oracle International Corporation Sense amp activation according to word line common point

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54150064A (en) * 1978-05-18 1979-11-24 Toshiba Corp Pulse generation circuit
JPS566072A (en) * 1979-06-29 1981-01-22 Nissan Motor Co Ltd Ignition distributor
US4363111A (en) * 1980-10-06 1982-12-07 Heightley John D Dummy cell arrangement for an MOS memory
JPS5838873B2 (ja) * 1980-10-15 1983-08-25 富士通株式会社 センス回路
US4393475A (en) * 1981-01-27 1983-07-12 Texas Instruments Incorporated Non-volatile semiconductor memory and the testing method for the same
JPS5987696A (ja) * 1982-11-10 1984-05-21 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド センス率の制御装置

Also Published As

Publication number Publication date
US4807193A (en) 1989-02-21
KR910002500B1 (ko) 1991-04-23
EP0240156A2 (en) 1987-10-07
EP0240156A3 (en) 1990-03-21
JPS62202398A (ja) 1987-09-07

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee