KR870006646A - 합성수지에 의한 전자부품의 캡슐화방법 - Google Patents

합성수지에 의한 전자부품의 캡슐화방법 Download PDF

Info

Publication number
KR870006646A
KR870006646A KR860010932A KR860010932A KR870006646A KR 870006646 A KR870006646 A KR 870006646A KR 860010932 A KR860010932 A KR 860010932A KR 860010932 A KR860010932 A KR 860010932A KR 870006646 A KR870006646 A KR 870006646A
Authority
KR
South Korea
Prior art keywords
resin
synthetic resin
coating
electronic component
mold
Prior art date
Application number
KR860010932A
Other languages
English (en)
Inventor
브와니 실비에
니예보에르 쇼외르트
Original Assignee
이반 밀러 레르너
엔 브이 필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이반 밀러 레르너, 엔 브이 필립스 글로아이람펜파브리켄 filed Critical 이반 밀러 레르너
Publication of KR870006646A publication Critical patent/KR870006646A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

내용 없음.

Description

합성수지에 의한 전자부품의 캡슐화방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방법에 의하여 캡슐화가 제공된 전자반도체부품의 단면도.
제2도는 본 발명에 따른 방법에 의하여 반사공동과 함께 제공된 발광다이오드를 예비피복시키는 공정의 도시도.
제3A도 및 제3B도는 본 발명에 따른 방법에 사용가능한, 최종 피복공정전의 준비공정의 도시도.
* 도면의 주요부분에 대한 부호의 설명
11 : 절연지지체 121,3 : 도체금속트랙
14 : 와이어 15 : 전자부품
16 : 에폭시비스페놀A디메타크리레이트수지 18 : 불투명필름
21,22 : 금속도체 24 : 반도체크리스탈
25 : 반사공동 26 : 수지
27 : 니들 33 : 수지
34 : 작동장치 35 : 필름
37 : 라인 41 : 금속도체
43 : 반도체크리스탈 46 : 공동
47 : 수지 51 : 중합
63 : 크리스탈 70 : 주형

Claims (6)

  1. 고정되어 작동장치를 금속도체에 전기적으로 접속된 후에, 합성수지에 의하여 적어도 하나의 피복수단이 수행되고, 상기 도체는 이러한 피복으로부터 부분이 침지되는, 전자부품을 캡슐화시키는 방법에 있어서, 원합성수지로서 에폭시비스페놀A 디메타크리레이트족이 사용되고, 이것에 광분쇄 혹은 0.2 및 3중량퍼센트 사이의 농도로서 수소 분자간 추출에 의하여 래디칼을 형성하는 광개시제합성하는 광개시제 합성물을 첨가하고, 또한 그후 상기 수지가 상기 수지가 상기 피복의 중합화를 이루도록 자외선으로 조사시키는 것을 특징으로 하는 합성수지로의 전자부품의 캡슐화방법.
  2. 상기 작동장치에 직접 가해지는 예비피복공정 및 예비 피복체적이 이 속에 포함되는 상기 캡슐화의 외부를 형성하는 최종 피복공정을 포함하는, 제1항에 따른 방법에 있어서, 상기 예비피복 공정에 대해서 상기 최종피복 공정으로 진행되기 전에 자외선방사로 조사되는 최종 피복에 대해 사용되는 것과 동일한 특성을 가진 원수지가 사용되는 것을 특징으로 하는 합성수지로의 전자부품의 캡슐화방법.
  3. 상기 주형이, 적어도 어떤 특수한 이것 외형의 부분에서 제어되고 재형성 가능한 형태를 갖는 캡슐의 외부를 얻도록 상기 주형이 사용되는 제1항에 따른 방법에 있어서, 자외선에 투명한 벽을 가진 주형이 사용되고, 각각의 적합한 위치에 고정된 후에 상기 장치가 이것의 도체들과 함께 제공되며 또한 상기 주형은 적당량의 수지와 함께 제공되는데, 상기 수지는 캡슐의 외부형태상에서 중화를 시작하도록 선택된 방향내에서 상기 주형 전체에 자외선이 조사되고, 상기 형태는 최선의 충실도를 갖도록 고려되고, 상기 상태는 연속적인 중합의 전면이 상기 선택적인 방향으로의 병진운동에 의하여 상기 수지 내에 치환되도록 유지되는 것을 특징으로 하는 합성수지로의 전자부품의 캡슐화방법.
  4. 제3항에 있어서, 상기 캡슐형태의 외부와는 별도로 상기 형태가 고려되고 또한 이것과 반대로 과도한 수지체적은 상기 중합화된 상태에서 캡슐화에 의하여 재현된 상기 체적에 대해서 제공되며, 또한 이러한 과도한 체적은 상기 수지의 과도한 체적의 연속적인 감소에 대한 중합화의 수축에 기인되어 응축되도록 중합화공정동안 제거되는 것과 무관하도록 유지되는 것을 특징으로 하는 합성수지로의 전자부품의 캡슐화방법.
  5. 제1항 내지 제4항중 어느 한항에 있어서, 상기 최종 피복공정전에 동일한 성질의 광중합 가능한 수지의 비교적 얇은 필름이 상기 최종 피복에 의하여 덮여질 도체의 부분 및 상기 장치에 가해지며, 또한 상기 필름은 최종 피복으로 진행되기 전에 완전하게 중합화될때까지 자외선으로 조사되는 것을 특징으로 하는 합성수지로의 전자부품의 캡슐화방법.
  6. 광전자 반도체장치를 피복시키기 위한 제1항 내지 제5항중 어느 한항에 청구된 상기 방법의 적용.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR860010932A 1985-12-20 1986-12-19 합성수지에 의한 전자부품의 캡슐화방법 KR870006646A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8518922 1985-12-20
FR8518922A FR2592221B1 (fr) 1985-12-20 1985-12-20 Procede d'encapsulation d'un composant electronique au moyen d'une resine synthetique

Publications (1)

Publication Number Publication Date
KR870006646A true KR870006646A (ko) 1987-07-13

Family

ID=9326015

Family Applications (1)

Application Number Title Priority Date Filing Date
KR860010932A KR870006646A (ko) 1985-12-20 1986-12-19 합성수지에 의한 전자부품의 캡슐화방법

Country Status (6)

Country Link
US (1) US4822536A (ko)
EP (1) EP0230078B1 (ko)
JP (1) JPS62156826A (ko)
KR (1) KR870006646A (ko)
DE (1) DE3678699D1 (ko)
FR (1) FR2592221B1 (ko)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3702999C2 (de) * 1987-02-02 2003-03-06 Siemens Ag Vorrichtung zur Verarbeitung von UV-härtbaren Reaktionsharzmassen und deren Anwendung
US4843036A (en) * 1987-06-29 1989-06-27 Eastman Kodak Company Method for encapsulating electronic devices
JP2585006B2 (ja) * 1987-07-22 1997-02-26 東レ・ダウコーニング・シリコーン株式会社 樹脂封止型半導体装置およびその製造方法
FR2620374B1 (fr) * 1987-09-11 1990-03-09 Framatome Sa Procede de realisation d'une piece en resine par photopolymerisation et applications de ce procede
US5219795A (en) * 1989-02-07 1993-06-15 Fujitsu Limited Dual in-line packaging and method of producing the same
IT1234027B (it) * 1989-03-14 1992-04-24 Gd Spa Macchina incartatrice continua
DE9013615U1 (ko) * 1990-09-28 1990-12-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De
US5173220A (en) * 1991-04-26 1992-12-22 Motorola, Inc. Method of manufacturing a three-dimensional plastic article
JPH05290669A (ja) * 1992-01-22 1993-11-05 Fujikura Ltd 照光スイッチ
US5482658A (en) * 1993-08-13 1996-01-09 Motorola, Inc. Method of making an optoelectronic interface module
DE4340862C2 (de) * 1993-12-01 2002-04-11 Vishay Semiconductor Gmbh Vergießvorrichtung zum Herstellen von optoelektronischen Bauelementen
DE4340864C2 (de) * 1993-12-01 1996-08-01 Telefunken Microelectron Vorrichtung und Verfahren zum Herstellen von optoelektronischen Bauelementen
US5389578A (en) * 1994-01-04 1995-02-14 Texas Instruments Incorporated Optical coupler
US5382310A (en) * 1994-04-29 1995-01-17 Eastman Kodak Company Packaging medical image sensors
KR100377981B1 (ko) * 1994-06-07 2003-05-27 텍사스 인스트루먼츠 인코포레이티드 성형화합물큐어링방법
US6254815B1 (en) * 1994-07-29 2001-07-03 Motorola, Inc. Molded packaging method for a sensing die having a pressure sensing diaphragm
US5614131A (en) * 1995-05-01 1997-03-25 Motorola, Inc. Method of making an optoelectronic device
US5851449A (en) * 1995-09-27 1998-12-22 Kabushiki Kaisha Toshiba Method for manufacturing a surface-mounted type optical semiconductor device
DE19701855C1 (de) * 1997-01-21 1998-09-24 Telefunken Microelectron Verfahren zum Vergießen optoelektronischer Bauelemente
US6523803B1 (en) 1998-09-03 2003-02-25 Micron Technology, Inc. Mold apparatus used during semiconductor device fabrication
FR2793069B1 (fr) * 1999-04-28 2003-02-14 Gemplus Card Int Procede de fabrication de dispositif electronique portable a circuit integre protege par resine photosensible
DE10129785B4 (de) * 2001-06-20 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
US20060105483A1 (en) * 2004-11-18 2006-05-18 Leatherdale Catherine A Encapsulated light emitting diodes and methods of making
DE102005034166A1 (de) 2005-07-21 2007-02-01 Osram Opto Semiconductors Gmbh Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, elektromagnetische Strahlung emittierendes Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102005059524A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements
US8092735B2 (en) 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
US9944031B2 (en) * 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
WO2008100991A1 (en) 2007-02-13 2008-08-21 3M Innovative Properties Company Led devices having lenses and methods of making same
TW200910648A (en) * 2007-08-31 2009-03-01 Isotech Products Inc Forming process of resin lens of an LED component
US20090065792A1 (en) * 2007-09-07 2009-03-12 3M Innovative Properties Company Method of making an led device having a dome lens
EP2310175A1 (en) * 2008-06-15 2011-04-20 Renevu Ltd. A method for manufacturing a lens to be added to a led, and a lens obtained with that method
US7794633B2 (en) * 2008-11-26 2010-09-14 Aptina Imaging Corporation Method and apparatus for fabricating lens masters

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980483A (en) * 1972-04-24 1976-09-14 Nippon Oil Seal Industry Co., Ltd. Photocurable composition
US4034466A (en) * 1974-09-03 1977-07-12 Motorola, Inc. Package and method for a semiconductor radiant energy emitting device
US4203792A (en) * 1977-11-17 1980-05-20 Bell Telephone Laboratories, Incorporated Method for the fabrication of devices including polymeric materials
NL7904113A (nl) * 1979-05-25 1980-11-27 Philips Nv Optisch uitleesbare informatieschijf, werkwijze voor de vervaardiging ervan alsmede een inrichting voor het uitvoeren van deze werkwijze.
DE3019239A1 (de) * 1980-05-20 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Umhuellung fuer halbleiterbauelement
JPS5771154A (en) * 1980-10-21 1982-05-01 Matsushita Electric Ind Co Ltd Semiconductor device
JPS58219781A (ja) * 1982-06-15 1983-12-21 Showa Denko Kk 発光ダイオ−ド素子の封止方法
JPS59213779A (ja) * 1983-04-22 1984-12-03 Meidensha Electric Mfg Co Ltd 紫外線硬化型ソルダ−レジストインキ
JPS609663A (ja) * 1983-06-27 1985-01-18 Kanai Hiroyuki 不織布研摩材

Also Published As

Publication number Publication date
DE3678699D1 (de) 1991-05-16
JPS62156826A (ja) 1987-07-11
US4822536A (en) 1989-04-18
FR2592221A1 (fr) 1987-06-26
FR2592221B1 (fr) 1988-02-12
EP0230078B1 (fr) 1991-04-10
EP0230078A1 (fr) 1987-07-29

Similar Documents

Publication Publication Date Title
KR870006646A (ko) 합성수지에 의한 전자부품의 캡슐화방법
US7256428B2 (en) Optoelectronic component and method for the production thereof
BR8305421A (pt) Encapsulacao por oclusao no interior de boratos de polimero de poliidroxi
JPH02501692A (ja) 厚膜ハイブリッド回路用密閉バリア
KR900019206A (ko) 반도체장치의 수지봉입방법
DE69013056T2 (de) Verfahren zur Einkapselung von Vorrichtungen.
GB1411199A (en) Electroluminescent semiconductor apparatus and method of fabricating the same
ATE154164T1 (de) Verfahren zur herstellung eines elektronischen moduls und elektronisches modul, hergestellt nach diesem verfahren
DE102004006513A1 (de) Verfahren zum Herstellen einer Led
US20190267522A1 (en) Method of forming one or more three-dimensional objects
US4540533A (en) Method of encapsulating electronic components by extrusion of plastic material
ATE82440T1 (de) Verfahren zum schuetzen von in einem gehaeuse eingeschlossenen elementen gegen feuchtigkeitseinfluss.
HK1055354A1 (en) Manufacturing method of a semiconductor device andapparatus for manufacturing a semiconductor devic e.
SU528892A3 (ru) Способ герметизации электрических деталей с однонаправленными выводами
KR910009401A (ko) 상감모양(象嵌模樣)이 들어있는 콘크리이트제품의 제조방법
US11923487B2 (en) Method for producing an optoelectronic device
GB8727902D0 (en) Method of forming a solid article
DE59305434D1 (de) Verfahren zur Herstellung einer magnetisierbaren Füllstoff enthaltenden Epoxidharzmasse
US5510153A (en) Method for encapsulating electronic conductors
EP3598510B1 (en) Light emitting diode device and producing methods thereof
JPS56167337A (en) Manufacture of resin-sealed type module
JPH0529663A (ja) 光半導体装置およびその樹脂封止方法
JPS63142659A (ja) 半導体装置の製造方法
JPH01300531A (ja) 半導体素子の封止方法
KR840002288A (ko) 모의 자연석 제조용 형틀의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application