KR830006825A - 광전변환장치(光電變換裝置) - Google Patents
광전변환장치(光電變換裝置) Download PDFInfo
- Publication number
- KR830006825A KR830006825A KR1019810001524A KR810001524A KR830006825A KR 830006825 A KR830006825 A KR 830006825A KR 1019810001524 A KR1019810001524 A KR 1019810001524A KR 810001524 A KR810001524 A KR 810001524A KR 830006825 A KR830006825 A KR 830006825A
- Authority
- KR
- South Korea
- Prior art keywords
- photoelectric conversion
- conversion device
- electrode
- substrate
- scanning means
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 238000005984 hydrogenation reaction Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000006104 solid solution Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명의 일실시예인 광전변환장치의 회소부(繪素部) 단면도.
제2a도~제2f도는 광전변환장치의 제조공정을 나타낸 장치 회소부 단면도.
Claims (4)
- 도면에 표시하고 본문에 상술한 바와같이 소정의 기판상에 광전변환부로서 제1의 전극과, 이 제1의 전극상에 설치된 수첨무전형실리콘층(水添無定形 silicon 層)과, 이 수첨무정형실리콘층에 투명도전체층으로 이루어진 제2의 전극을 최소한 갖는 광전변환장치에 있어서, 상기 투면도전체층이 In2O3또는 In2O3와 SnO2와의 고체용액의 두께 300∼2000Å의 층인 것을 특징으로 하는 광전변환장치.
- 상기 기판이 복수개의 광전변환부를 순차적으로 선택하는 주사수단을 가지며, 이 주사수단의 전기적 접속수다니 상기 제1의 전극으로서 형성되어 이루어지는 것을 특징으로 하는 특허청구의 범위 1기재의 광전변환장치.
- 상기 기판이 반도체기판이며, 상기 주사수단으로부터의 제1의 전극이 복수개 2차원적으로 배열되어 있는 것을 특징으로 하는 특허청구의 범위 2기재의 광전변환장치.
- 상기 투명도전체층상에 컬러필터가 설치되어서 이루어지는 것을 특징으로 하는 특허청구의 범위 2또는 3기재의 광전변환장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6062080A JPS56157075A (en) | 1980-05-09 | 1980-05-09 | Photoelectric transducing device |
JP60620 | 1980-05-09 | ||
JP80-60620 | 1980-05-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR830006825A true KR830006825A (ko) | 1983-10-06 |
KR850000901B1 KR850000901B1 (ko) | 1985-06-26 |
Family
ID=13147499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019810001524A KR850000901B1 (ko) | 1980-05-09 | 1981-05-02 | 광전변환장치(光電變換裝置) |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0040076B1 (ko) |
JP (1) | JPS56157075A (ko) |
KR (1) | KR850000901B1 (ko) |
CA (1) | CA1161534A (ko) |
DE (1) | DE3169340D1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4412900A (en) * | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
US4490227A (en) * | 1982-11-03 | 1984-12-25 | Donnelly Mirrors, Inc. | Process for making a curved, conductively coated glass member and the product thereof |
US4650557A (en) * | 1982-11-03 | 1987-03-17 | Donnelly Corporation | Process for making a conductively coated glass member and the product thereof |
JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
JPH0614552B2 (ja) * | 1983-02-02 | 1994-02-23 | 富士ゼロックス株式会社 | 光電変換素子の製造方法 |
JPS59143362A (ja) * | 1983-02-03 | 1984-08-16 | Fuji Xerox Co Ltd | パツシベ−シヨン膜 |
JPS6045057A (ja) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | 固体撮像装置の製造方法 |
US4655811A (en) * | 1985-12-23 | 1987-04-07 | Donnelly Corporation | Conductive coating treatment of glass sheet bending process |
JPS6316659A (ja) * | 1986-07-09 | 1988-01-23 | Fuji Photo Film Co Ltd | 固体撮像装置 |
US5101255A (en) * | 1987-01-14 | 1992-03-31 | Sachio Ishioka | Amorphous photoelectric conversion device with avalanche |
JPH07120768B2 (ja) * | 1987-01-14 | 1995-12-20 | 株式会社日立製作所 | 光電変換装置 |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
JPS5670673A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Photoelectric converter |
JPS5687782U (ko) * | 1979-12-10 | 1981-07-14 | ||
JPS56103578A (en) * | 1980-01-23 | 1981-08-18 | Hitachi Ltd | Solid state pickup element |
-
1980
- 1980-05-09 JP JP6062080A patent/JPS56157075A/ja active Pending
-
1981
- 1981-05-02 KR KR1019810001524A patent/KR850000901B1/ko active Pre-grant Review Request
- 1981-05-08 DE DE8181302071T patent/DE3169340D1/de not_active Expired
- 1981-05-08 EP EP81302071A patent/EP0040076B1/en not_active Expired
- 1981-05-08 CA CA000377141A patent/CA1161534A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3169340D1 (en) | 1985-04-25 |
CA1161534A (en) | 1984-01-31 |
KR850000901B1 (ko) | 1985-06-26 |
EP0040076A3 (en) | 1982-09-22 |
EP0040076A2 (en) | 1981-11-18 |
EP0040076B1 (en) | 1985-03-20 |
JPS56157075A (en) | 1981-12-04 |
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E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
O035 | Opposition [patent]: request for opposition |
Free format text: OPPOSITION NUMBER: 001985000264001985001350; OPPOSITION DATE: 23740428 |