KR900013610A - 반도체 소자 제조방법 - Google Patents

반도체 소자 제조방법 Download PDF

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Publication number
KR900013610A
KR900013610A KR1019900001222A KR900001222A KR900013610A KR 900013610 A KR900013610 A KR 900013610A KR 1019900001222 A KR1019900001222 A KR 1019900001222A KR 900001222 A KR900001222 A KR 900001222A KR 900013610 A KR900013610 A KR 900013610A
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South Korea
Prior art keywords
semiconductor element
substrate
insulating resin
compression mechanism
semiconductor
Prior art date
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KR1019900001222A
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English (en)
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KR930003138B1 (ko
Inventor
하로아끼 후지모또
겐죠 하따다
요시노부 다케시다
가쯔야 오다니
고지 히다가
쯔고우 사끼야마
Original Assignee
다니이 아끼오
마쓰시다 덴기 산교 가부시기가이샤
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Publication of KR900013610A publication Critical patent/KR900013610A/ko
Application granted granted Critical
Publication of KR930003138B1 publication Critical patent/KR930003138B1/ko

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Abstract

내용 없음

Description

반도체 소자 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4a도 내지 제 4c도 및 제 5a도 내지 제 5c도는 본 발명 반도체 소자 제조방법을 나타내는 개략도.

Claims (8)

  1. 반도체 소자의 제조에 있어서, 고정된 제1 반도체 소자에서 콘덕터를 갖는 투명한 기판의 하나의 주요면 부분에 제1 절연 광응결 수지를 증착하고, 상기 제 1반도체 소자의 전극이 기판의 콘덕터 군을 갖고 부합하는 방법으로 증착되는 상기 제 1절연수지에 기판의 상기 부분위에 상기 제 1반도체 소자를 배열하고, 상기 입축기구로 상기 기판에 대비하는 상기 제1 반도체 소자를 압축하고, 경화된 상기 제 1절연수지 부분으로 인해 상기 기판의 다른 주요면으로부터 실행되어지는 광선을 갖는 상기 조사가 다른 외측의 전극은 포함하지 않으나 하나의 외측의 전극은 포함하는 상기 제 1반도체 소자 부분에 위치한 상기 제 1절연수지 부분이 광선으로 선택적으로 조사하고, 상기 제 1반도체 소자인 기판의 주요면의 상기 부분에 제 2절연 광응결수지를 증착하고, 상기 제 2반도체 소자가 기판의 또다른 콘덕터 군을 갖고 부합하는 방법으로 증착되는 상기 제 2절연수지의 기판 상기 부분위에 제 2반도체 소자를 배열하고, 상기 첫 번째 압축기구가 독립적으로 아래위로 움직이고 상기 첫 번째 압축기구와 분리된 두 번째 압축기구와 상기 첫 번째 압축기구에 의하여 기판에 대비하는 상기 제 1 및 제 2반도체 소자를 압축하고, 상기 제 1 및 제 2반도체 소자 사이에 위치한 절연수지에서 상기 제 1절연수지의 잔여 부분이 광선을 갖고 선택적으로 조사되고 상기 제 2절연수지 부분은 상기 제 2반도체 소자의 타측 전극은 포함하지 않으나 제 1반도체 소자측의 전극을 포함하는 상기 제 2반도체 소자에 위치하며 상기 광선의 조사는 기판의 다른 주요면으로부터 실행되고이번 단계에서 광선으로 조사된 영역 부분은 앞단계에서 광선으로 조사된 영역 부분에 중첩되어 상기 제 1 및 제 2반도체 소자 사이에 위치한 절연수지에서 상기 제 1절연수지의 잔여부분으로 되고 상기 제 2절연수지 부분은 상기 제 1반도체 소자로부터 부가된 전극을 포함하는 영역을 제외한 상기 제 12반도체 소자 부분에 위치하는 것을 특징으로 하는 반도체 소자 제조방법.
  2. 제 1항에 있어서, 시이트는 상기 절연수지가 상기 반도체 소자와 상기 압축기구 사이에 삽입되어져 하위에 부착되도록 한 것을 특징으로 하는 반도체 소자 제조방법.
  3. 제 1항에 있어서, 상기 제 2반도체 소자가 상기 두 번째 압축기구에 의하여 상기 기판에 대비하여 압축되는 것과 상이하게 상기 제 1반도체 소자는 상기 첫 번째 압축기구에 의하여 상기 기판에 대비하여 압축되는 것을 특징으로 하는 반도체 소자 제조방법.
  4. 제 1항에 있어서, 상기 제 1과 제 2반도체 소자 각각의 상기 전극이 범프전극인 것을 특징으로 하는 반도체 소자 제조방법.
  5. 반도체 소자의 제조에 있어서, 배열된 전극위에 제 1반도체 소자의 표면에 제 1절연 수지를 증착하고, 상기 제 1반도체 소자의 상기 전극이 기판에 상기 콘덕터를 갖고 부합하기 위해 배열된 콘덕터위에 투명한 기판의 하나의 주요면위에 상기 제 1반도체 소자를 배열하고, 첫 번째 압축기구로 상기 기판에 대비하는 상기 제 1반도체 소자를 압축하고, 경화된 상기 제 1절연수지의 상기 부분으로 인해 상기 기판의 다른 주요면으로부터 실행되어지는 광선을 갖는 조사가 다른 외측의 전극 영역은 포함하지 않으나, 하나의 외측의 영역을 포함하는 제 1반도체 소자 부분에 위치한 상기 제 1절연수지 부분이 광선으로 선택적으로 조사하고, 전극이 배열된 제 2반도체 소자의 표면의 제 2절연수지를 증착하고, 상기 제 2반도체 소자의 상기 전극이 상기 기판의 콘덕터 군을 갖고 부합하는 방법으로 상기 제 1반도체 소자에 근접한 기판의 하나의 주요면의 상기 부분에 상기 제 2반도체 소자를 배열하고, 상기 첫 번째 압축기구가 독립적으로 아래위로 움직이고 상기 첫 번째 압축기구와 분리된 두 번째 압축기구와 상기 첫 번째 압축기구에 의하여 기판에 대비하는 상기 제 1 및 제 2반도체 소자를 압축하고, 상기 제 1 및 제 2반도체 소자 사이에 위치한 절연수지에서 상기 제 1절연수지의 잔여부분이 광선을 갖고 선택적으로 조사되고 상기 제 2절연수지 부분은 상기 제 2반도체 소자의 타측 전극은 포함하지 않으나 제 1반도체 소자의 전극은 포함하는 상기 제 2반도체 소자 부분에 위치하고 상기 광선의 조사는 기판의 주요면으로부터 실행되고 이번 단계에서 광선으로 조사된 영역부분은 앞 단계에서 광선으로 조사된 영역부분과 중첩되어 상기 제 1 및 제 2반도체 소자 사이에 위치한 절연 수지에서 상기 제1의 잔여부분으로 되고 상기 제 2절연수지 부분은 상기 제1 반도체 소자로 부터 부가된 전극을 포함하는 영역을 제외한 상기 제 2반도체 소자 부분에 위치하는 것을 특징으로 하는 반도체 소자 제조방법.
  6. 제 5항에 있어서, 시이트는 상기 절연수지가 상기 반도체 소자와 상기 압축기구 사이에 삽입되어져 하위에 부착되도록 한 것을 특징으로 하는 반도체 소자 제조방법.
  7. 상기 제 2반도체 소자가 상기 두 번째 압축기구에 의하여 상기 기판에 대비하여 압축되는 것과 상이하게 상기 제 1반도체 소자는 상기 첫 번째 압축기구에 의하여 상기 기판에 대비하여 압축되는 것을 특징으로 하는 반도체 소자 제조방법.
  8. 제 5항에 있어서, 상기 제 1과 제 2반도체 소자 각각의 상기 전극이 범프전극인 것을 특징으로 하는 반도체 소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900001222A 1989-02-02 1990-02-02 반도체 소자 제조방법 KR930003138B1 (ko)

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EP0389756B1 (en) 1994-06-01
EP0389756A2 (en) 1990-10-03
DE69009259T2 (de) 1994-10-13
EP0389756A3 (en) 1991-04-03
DE69009259D1 (de) 1994-07-07
US5037780A (en) 1991-08-06

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