JPS56157075A - Photoelectric transducing device - Google Patents
Photoelectric transducing deviceInfo
- Publication number
- JPS56157075A JPS56157075A JP6062080A JP6062080A JPS56157075A JP S56157075 A JPS56157075 A JP S56157075A JP 6062080 A JP6062080 A JP 6062080A JP 6062080 A JP6062080 A JP 6062080A JP S56157075 A JPS56157075 A JP S56157075A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent electrode
- film thickness
- oxide films
- transducing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002463 transducing effect Effects 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6062080A JPS56157075A (en) | 1980-05-09 | 1980-05-09 | Photoelectric transducing device |
KR1019810001524A KR850000901B1 (ko) | 1980-05-09 | 1981-05-02 | 광전변환장치(光電變換裝置) |
EP81302071A EP0040076B1 (en) | 1980-05-09 | 1981-05-08 | Photoelectric converter |
DE8181302071T DE3169340D1 (en) | 1980-05-09 | 1981-05-08 | Photoelectric converter |
CA000377141A CA1161534A (en) | 1980-05-09 | 1981-05-08 | Photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6062080A JPS56157075A (en) | 1980-05-09 | 1980-05-09 | Photoelectric transducing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56157075A true JPS56157075A (en) | 1981-12-04 |
Family
ID=13147499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6062080A Pending JPS56157075A (en) | 1980-05-09 | 1980-05-09 | Photoelectric transducing device |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0040076B1 (ja) |
JP (1) | JPS56157075A (ja) |
KR (1) | KR850000901B1 (ja) |
CA (1) | CA1161534A (ja) |
DE (1) | DE3169340D1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4412900A (en) * | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
US4650557A (en) * | 1982-11-03 | 1987-03-17 | Donnelly Corporation | Process for making a conductively coated glass member and the product thereof |
US4490227A (en) * | 1982-11-03 | 1984-12-25 | Donnelly Mirrors, Inc. | Process for making a curved, conductively coated glass member and the product thereof |
JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
JPH0614552B2 (ja) * | 1983-02-02 | 1994-02-23 | 富士ゼロックス株式会社 | 光電変換素子の製造方法 |
JPS59143362A (ja) * | 1983-02-03 | 1984-08-16 | Fuji Xerox Co Ltd | パツシベ−シヨン膜 |
JPS6045057A (ja) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | 固体撮像装置の製造方法 |
US4655811A (en) * | 1985-12-23 | 1987-04-07 | Donnelly Corporation | Conductive coating treatment of glass sheet bending process |
JPS6316659A (ja) * | 1986-07-09 | 1988-01-23 | Fuji Photo Film Co Ltd | 固体撮像装置 |
JPH07120768B2 (ja) * | 1987-01-14 | 1995-12-20 | 株式会社日立製作所 | 光電変換装置 |
US5101255A (en) * | 1987-01-14 | 1992-03-31 | Sachio Ishioka | Amorphous photoelectric conversion device with avalanche |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
JPS5670673A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Photoelectric converter |
JPS5687782U (ja) * | 1979-12-10 | 1981-07-14 | ||
JPS56103578A (en) * | 1980-01-23 | 1981-08-18 | Hitachi Ltd | Solid state pickup element |
-
1980
- 1980-05-09 JP JP6062080A patent/JPS56157075A/ja active Pending
-
1981
- 1981-05-02 KR KR1019810001524A patent/KR850000901B1/ko active Pre-grant Review Request
- 1981-05-08 DE DE8181302071T patent/DE3169340D1/de not_active Expired
- 1981-05-08 EP EP81302071A patent/EP0040076B1/en not_active Expired
- 1981-05-08 CA CA000377141A patent/CA1161534A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0040076A2 (en) | 1981-11-18 |
EP0040076B1 (en) | 1985-03-20 |
DE3169340D1 (en) | 1985-04-25 |
EP0040076A3 (en) | 1982-09-22 |
KR850000901B1 (ko) | 1985-06-26 |
CA1161534A (en) | 1984-01-31 |
KR830006825A (ko) | 1983-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56169368A (en) | High withstand voltage mos field effect semiconductor device | |
JPS55120182A (en) | Photoelectric converter | |
JPS56135968A (en) | Amorphous silicon thin film transistor and manufacture thereof | |
JPS5736844A (en) | Semiconductor device | |
JPS56157075A (en) | Photoelectric transducing device | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS56169369A (en) | High withstand voltage mos field effect semiconductor device | |
JPS5696850A (en) | Semiconductor device and manufacture thereof | |
JPS5787174A (en) | Semiconductor integrated circuit device | |
JPS567480A (en) | Film transistor | |
JPS5769778A (en) | Semiconductor device | |
JPS57102069A (en) | Semiconductor device | |
JPS56125875A (en) | Semiconductor integrated circuit device | |
JPS5513944A (en) | C-mos semiconductor device | |
JPS644083A (en) | Photovoltaic device | |
JPS5459875A (en) | Semiconductor device | |
JPS52130580A (en) | High densityintegrated circuit device | |
JPS5466089A (en) | Semiconductor capacitor device | |
JPS57136362A (en) | Semiconductor device | |
JPS5664467A (en) | Mos type semiconductor device | |
JPS5688366A (en) | Semiconductor device | |
JPS54109385A (en) | Field effect semiconductor device of high dielectric strength | |
JPS57172771A (en) | Semiconductor memory device | |
JPS57160163A (en) | Nonvolatile semiconductor memory | |
JPS5580332A (en) | Semiconductor device |