KR830002294B1 - 실리콘 전지의 pn 접합시 그 위에 단일 코팅을 형성하는 방법 - Google Patents

실리콘 전지의 pn 접합시 그 위에 단일 코팅을 형성하는 방법 Download PDF

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Publication number
KR830002294B1
KR830002294B1 KR1019800003221A KR800003221A KR830002294B1 KR 830002294 B1 KR830002294 B1 KR 830002294B1 KR 1019800003221 A KR1019800003221 A KR 1019800003221A KR 800003221 A KR800003221 A KR 800003221A KR 830002294 B1 KR830002294 B1 KR 830002294B1
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South Korea
Prior art keywords
solution
silicon
coating
alkoxide
dopant
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Expired
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KR1019800003221A
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English (en)
Korean (ko)
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KR830003804A (ko
Inventor
이. 욜다스 뷰렌트
에이. 욜다스 루보미라
Original Assignee
웨스팅하우스 일렉트릭 코오포레이숀
알. 브이. 가버트, 쥬니어
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Publication of KR830003804A publication Critical patent/KR830003804A/ko
Application granted granted Critical
Publication of KR830002294B1 publication Critical patent/KR830002294B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
KR1019800003221A 1979-08-14 1980-08-14 실리콘 전지의 pn 접합시 그 위에 단일 코팅을 형성하는 방법 Expired KR830002294B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/066,368 US4251285A (en) 1979-08-14 1979-08-14 Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
US066.368 1979-08-14
US066,368 1987-06-25

Publications (2)

Publication Number Publication Date
KR830003804A KR830003804A (ko) 1983-06-22
KR830002294B1 true KR830002294B1 (ko) 1983-10-21

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KR1019800003221A Expired KR830002294B1 (ko) 1979-08-14 1980-08-14 실리콘 전지의 pn 접합시 그 위에 단일 코팅을 형성하는 방법

Country Status (14)

Country Link
US (1) US4251285A (cg-RX-API-DMAC7.html)
EP (1) EP0024057B1 (cg-RX-API-DMAC7.html)
JP (1) JPS5660075A (cg-RX-API-DMAC7.html)
KR (1) KR830002294B1 (cg-RX-API-DMAC7.html)
AU (1) AU537352B2 (cg-RX-API-DMAC7.html)
BR (1) BR8005034A (cg-RX-API-DMAC7.html)
DE (1) DE3067142D1 (cg-RX-API-DMAC7.html)
ES (1) ES8106817A1 (cg-RX-API-DMAC7.html)
HK (1) HK29385A (cg-RX-API-DMAC7.html)
IL (1) IL60807A (cg-RX-API-DMAC7.html)
IN (1) IN152740B (cg-RX-API-DMAC7.html)
MX (1) MX155893A (cg-RX-API-DMAC7.html)
MY (1) MY8500900A (cg-RX-API-DMAC7.html)
ZA (1) ZA804634B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101381844B1 (ko) * 2012-04-24 2014-04-24 에스티엑스 솔라주식회사 양면형 태양전지 제조방법

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619719A (en) * 1982-01-28 1986-10-28 Owens-Illinois, Inc. Process for forming a doped oxide film and composite article
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
DE3340874A1 (de) * 1983-11-11 1985-05-23 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen einer solarzelle
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
US4744973A (en) * 1985-11-29 1988-05-17 Westinghouse Electric Corp. Inorganic polymeric cationic ion exchange matrix
US4808464A (en) * 1987-07-23 1989-02-28 Westinghouse Electric Corp. Insulating ferromagnetic amorphous metal strips
US4759949A (en) * 1987-07-23 1988-07-26 Westinghouse Electric Corp. Method of insulating ferromagnetic amorphous metal continuous strip
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法
US5792280A (en) * 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
AUPM996094A0 (en) * 1994-12-08 1995-01-05 Pacific Solar Pty Limited Multilayer solar cells with bypass diode protection
US6278053B1 (en) * 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
EP1101244A4 (en) * 1998-04-13 2004-03-31 Univ Princeton MODIFICATION OF THE OPTOELECTRONIC PROPERTIES OF A POLYMER AFTER FORMATION OF A THIN FILM BY ADDITION OR REMOVAL OF IMPURITIES
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
EP2057301A2 (en) * 2006-08-31 2009-05-13 Despatch Industries Limited Partnership Continuous dopant addition
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US8507837B2 (en) 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
CN102687284A (zh) * 2009-12-28 2012-09-19 夏普株式会社 太阳能电池单元的制造方法
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
JP5723143B2 (ja) * 2010-12-06 2015-05-27 シャープ株式会社 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
JP2013026524A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
WO2013043809A2 (en) * 2011-09-21 2013-03-28 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Heterostructure si solar cells using wide-bandgap semiconductors
MX342532B (es) 2012-10-04 2016-09-30 Solarcity Corp Dispositivos fotovoltaicos con rejillas metalicas galvanizadas.
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
KR20220058486A (ko) * 2018-07-05 2022-05-09 유엔엠 레인포레스트 이노베이션즈 모듈 신뢰성 증대를 위한 저비용의 내균열성 스크린-인쇄 가능한 금속화

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437527A (en) * 1966-10-26 1969-04-08 Webb James E Method for producing a solar cell having an integral protective covering
US3460956A (en) * 1968-07-19 1969-08-12 Joseph Dahle Titanate product and method of making the same
US3993506A (en) * 1975-09-25 1976-11-23 Varian Associates Photovoltaic cell employing lattice matched quaternary passivating layer
US4101351A (en) * 1976-11-15 1978-07-18 Texas Instruments Incorporated Process for fabricating inexpensive high performance solar cells using doped oxide junction and insitu anti-reflection coatings
JPS5482992A (en) * 1977-12-14 1979-07-02 Sharp Corp Solar battery and its manufacture
IN152814B (cg-RX-API-DMAC7.html) * 1978-08-08 1984-04-14 Westinghouse Electric Corp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101381844B1 (ko) * 2012-04-24 2014-04-24 에스티엑스 솔라주식회사 양면형 태양전지 제조방법

Also Published As

Publication number Publication date
DE3067142D1 (en) 1984-04-26
IN152740B (cg-RX-API-DMAC7.html) 1984-03-24
JPS5660075A (en) 1981-05-23
US4251285A (en) 1981-02-17
IL60807A (en) 1983-10-31
IL60807A0 (en) 1980-10-26
MY8500900A (en) 1985-12-31
AU537352B2 (en) 1984-06-21
AU6100180A (en) 1981-02-19
HK29385A (en) 1985-04-19
EP0024057B1 (en) 1984-03-21
ZA804634B (en) 1981-07-29
KR830003804A (ko) 1983-06-22
ES494214A0 (es) 1981-08-01
EP0024057A1 (en) 1981-02-18
BR8005034A (pt) 1981-02-24
ES8106817A1 (es) 1981-08-01
MX155893A (es) 1988-05-18

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