ES8106817A1 - Un metodo para aplicar un revestimiento antirreflejante so- bre silicio - Google Patents

Un metodo para aplicar un revestimiento antirreflejante so- bre silicio

Info

Publication number
ES8106817A1
ES8106817A1 ES494214A ES494214A ES8106817A1 ES 8106817 A1 ES8106817 A1 ES 8106817A1 ES 494214 A ES494214 A ES 494214A ES 494214 A ES494214 A ES 494214A ES 8106817 A1 ES8106817 A1 ES 8106817A1
Authority
ES
Spain
Prior art keywords
silicon
coating
applying
alcoxides
per
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES494214A
Other languages
English (en)
Spanish (es)
Other versions
ES494214A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of ES494214A0 publication Critical patent/ES494214A0/es
Publication of ES8106817A1 publication Critical patent/ES8106817A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
ES494214A 1979-08-14 1980-08-13 Un metodo para aplicar un revestimiento antirreflejante so- bre silicio Expired ES8106817A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/066,368 US4251285A (en) 1979-08-14 1979-08-14 Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon

Publications (2)

Publication Number Publication Date
ES494214A0 ES494214A0 (es) 1981-08-01
ES8106817A1 true ES8106817A1 (es) 1981-08-01

Family

ID=22069056

Family Applications (1)

Application Number Title Priority Date Filing Date
ES494214A Expired ES8106817A1 (es) 1979-08-14 1980-08-13 Un metodo para aplicar un revestimiento antirreflejante so- bre silicio

Country Status (14)

Country Link
US (1) US4251285A (cg-RX-API-DMAC7.html)
EP (1) EP0024057B1 (cg-RX-API-DMAC7.html)
JP (1) JPS5660075A (cg-RX-API-DMAC7.html)
KR (1) KR830002294B1 (cg-RX-API-DMAC7.html)
AU (1) AU537352B2 (cg-RX-API-DMAC7.html)
BR (1) BR8005034A (cg-RX-API-DMAC7.html)
DE (1) DE3067142D1 (cg-RX-API-DMAC7.html)
ES (1) ES8106817A1 (cg-RX-API-DMAC7.html)
HK (1) HK29385A (cg-RX-API-DMAC7.html)
IL (1) IL60807A (cg-RX-API-DMAC7.html)
IN (1) IN152740B (cg-RX-API-DMAC7.html)
MX (1) MX155893A (cg-RX-API-DMAC7.html)
MY (1) MY8500900A (cg-RX-API-DMAC7.html)
ZA (1) ZA804634B (cg-RX-API-DMAC7.html)

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US4619719A (en) * 1982-01-28 1986-10-28 Owens-Illinois, Inc. Process for forming a doped oxide film and composite article
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
DE3340874A1 (de) * 1983-11-11 1985-05-23 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen einer solarzelle
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
US4744973A (en) * 1985-11-29 1988-05-17 Westinghouse Electric Corp. Inorganic polymeric cationic ion exchange matrix
US4808464A (en) * 1987-07-23 1989-02-28 Westinghouse Electric Corp. Insulating ferromagnetic amorphous metal strips
US4759949A (en) * 1987-07-23 1988-07-26 Westinghouse Electric Corp. Method of insulating ferromagnetic amorphous metal continuous strip
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法
US5792280A (en) * 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
AUPM996094A0 (en) * 1994-12-08 1995-01-05 Pacific Solar Pty Limited Multilayer solar cells with bypass diode protection
US6278053B1 (en) * 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
EP1101244A4 (en) * 1998-04-13 2004-03-31 Univ Princeton MODIFICATION OF THE OPTOELECTRONIC PROPERTIES OF A POLYMER AFTER FORMATION OF A THIN FILM BY ADDITION OR REMOVAL OF IMPURITIES
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
EP2057301A2 (en) * 2006-08-31 2009-05-13 Despatch Industries Limited Partnership Continuous dopant addition
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US8507837B2 (en) 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
CN102687284A (zh) * 2009-12-28 2012-09-19 夏普株式会社 太阳能电池单元的制造方法
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
JP5723143B2 (ja) * 2010-12-06 2015-05-27 シャープ株式会社 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
JP2013026524A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
WO2013043809A2 (en) * 2011-09-21 2013-03-28 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Heterostructure si solar cells using wide-bandgap semiconductors
KR101381844B1 (ko) * 2012-04-24 2014-04-24 에스티엑스 솔라주식회사 양면형 태양전지 제조방법
MX342532B (es) 2012-10-04 2016-09-30 Solarcity Corp Dispositivos fotovoltaicos con rejillas metalicas galvanizadas.
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
KR20220058486A (ko) * 2018-07-05 2022-05-09 유엔엠 레인포레스트 이노베이션즈 모듈 신뢰성 증대를 위한 저비용의 내균열성 스크린-인쇄 가능한 금속화

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437527A (en) * 1966-10-26 1969-04-08 Webb James E Method for producing a solar cell having an integral protective covering
US3460956A (en) * 1968-07-19 1969-08-12 Joseph Dahle Titanate product and method of making the same
US3993506A (en) * 1975-09-25 1976-11-23 Varian Associates Photovoltaic cell employing lattice matched quaternary passivating layer
US4101351A (en) * 1976-11-15 1978-07-18 Texas Instruments Incorporated Process for fabricating inexpensive high performance solar cells using doped oxide junction and insitu anti-reflection coatings
JPS5482992A (en) * 1977-12-14 1979-07-02 Sharp Corp Solar battery and its manufacture
IN152814B (cg-RX-API-DMAC7.html) * 1978-08-08 1984-04-14 Westinghouse Electric Corp

Also Published As

Publication number Publication date
KR830002294B1 (ko) 1983-10-21
DE3067142D1 (en) 1984-04-26
IN152740B (cg-RX-API-DMAC7.html) 1984-03-24
JPS5660075A (en) 1981-05-23
US4251285A (en) 1981-02-17
IL60807A (en) 1983-10-31
IL60807A0 (en) 1980-10-26
MY8500900A (en) 1985-12-31
AU537352B2 (en) 1984-06-21
AU6100180A (en) 1981-02-19
HK29385A (en) 1985-04-19
EP0024057B1 (en) 1984-03-21
ZA804634B (en) 1981-07-29
KR830003804A (ko) 1983-06-22
ES494214A0 (es) 1981-08-01
EP0024057A1 (en) 1981-02-18
BR8005034A (pt) 1981-02-24
MX155893A (es) 1988-05-18

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971001