KR20250145002A - 환경 부하를 저감하기 위한 레지스트 하층막 형성용 조성물 - Google Patents
환경 부하를 저감하기 위한 레지스트 하층막 형성용 조성물Info
- Publication number
- KR20250145002A KR20250145002A KR1020257023933A KR20257023933A KR20250145002A KR 20250145002 A KR20250145002 A KR 20250145002A KR 1020257023933 A KR1020257023933 A KR 1020257023933A KR 20257023933 A KR20257023933 A KR 20257023933A KR 20250145002 A KR20250145002 A KR 20250145002A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- composition
- component
- underlayer film
- resist underlayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H01L21/0274—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023015575 | 2023-02-03 | ||
| JPJP-P-2023-015575 | 2023-02-03 | ||
| PCT/JP2024/003426 WO2024162459A1 (ja) | 2023-02-03 | 2024-02-02 | 環境負荷を低減するためのレジスト下層膜形成用組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250145002A true KR20250145002A (ko) | 2025-10-13 |
Family
ID=92146901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257023933A Pending KR20250145002A (ko) | 2023-02-03 | 2024-02-02 | 환경 부하를 저감하기 위한 레지스트 하층막 형성용 조성물 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4641300A4 (https=) |
| JP (1) | JPWO2024162459A1 (https=) |
| KR (1) | KR20250145002A (https=) |
| CN (1) | CN120530365A (https=) |
| TW (1) | TW202437015A (https=) |
| WO (1) | WO2024162459A1 (https=) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003017002A1 (en) | 2001-08-20 | 2003-02-27 | Nissan Chemical Industries, Ltd. | Composition for forming antireflective film for use in lithography |
Family Cites Families (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1771149A1 (en) * | 2004-07-23 | 2007-04-11 | The Procter and Gamble Company | Skin care composition containing a flavonoid and vitamin b3 |
| JP4832955B2 (ja) * | 2005-06-07 | 2011-12-07 | 信越化学工業株式会社 | レジスト下層膜材料並びにそれを用いたパターン形成方法 |
| JP5238292B2 (ja) * | 2007-03-23 | 2013-07-17 | 三菱製紙株式会社 | 水現像可能な感光性平版印刷版材料 |
| JP5518394B2 (ja) | 2008-08-13 | 2014-06-11 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP5297775B2 (ja) | 2008-11-28 | 2013-09-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP5572345B2 (ja) | 2009-08-24 | 2014-08-13 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法 |
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| JP2012022261A (ja) | 2010-06-15 | 2012-02-02 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物、レジストパターン形成方法 |
| JP2012022258A (ja) | 2010-07-16 | 2012-02-02 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物、レジストパターン形成方法 |
| JP5953670B2 (ja) | 2010-08-27 | 2016-07-20 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
| JP2012168279A (ja) | 2011-02-10 | 2012-09-06 | Tokyo Ohka Kogyo Co Ltd | Ｅｕｖ用レジスト組成物、ｅｕｖ用レジスト組成物の製造方法、およびレジストパターン形成方法 |
| JP6232812B2 (ja) | 2012-08-08 | 2017-11-22 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
| WO2014208542A1 (ja) | 2013-06-26 | 2014-12-31 | 日産化学工業株式会社 | 置換された架橋性化合物を含むレジスト下層膜形成組成物 |
| JP2015010878A (ja) | 2013-06-27 | 2015-01-19 | 日本精機株式会社 | 液面位置検出装置及び液面位置検出方法 |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| JP6601041B2 (ja) | 2014-07-31 | 2019-11-06 | 住友化学株式会社 | レジスト組成物 |
| JP6601039B2 (ja) | 2014-07-31 | 2019-11-06 | 住友化学株式会社 | レジスト組成物 |
| JP6617459B2 (ja) | 2014-07-31 | 2019-12-11 | 住友化学株式会社 | レジスト組成物 |
| JP6541508B2 (ja) | 2014-08-25 | 2019-07-10 | 住友化学株式会社 | 塩、樹脂、レジスト組成物及びレジストパターンの製造方法 |
| KR102952227B1 (ko) | 2014-10-23 | 2026-04-13 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| JP2016090441A (ja) | 2014-11-06 | 2016-05-23 | 東京応化工業株式会社 | 電子銃の電子線照射量の安定化方法、及びアウトガス評価方法 |
| US11815815B2 (en) * | 2014-11-19 | 2023-11-14 | Nissan Chemical Industries, Ltd. | Composition for forming silicon-containing resist underlayer film removable by wet process |
| JP6585477B2 (ja) | 2014-11-26 | 2019-10-02 | 住友化学株式会社 | 塩、樹脂、レジスト組成物及びレジストパターンの製造方法 |
| US9580402B2 (en) | 2015-01-08 | 2017-02-28 | Sumitomo Chemical Company, Limited | Salt, acid generator, photoresist composition, and method for producing photoresist pattern |
| KR102508142B1 (ko) | 2015-10-13 | 2023-03-08 | 인프리아 코포레이션 | 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝 |
| KR102394042B1 (ko) | 2016-03-11 | 2022-05-03 | 인프리아 코포레이션 | 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 |
| KR102328436B1 (ko) | 2016-04-28 | 2021-11-18 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 |
| KR20180010354A (ko) * | 2016-07-20 | 2018-01-31 | 중앙대학교 산학협력단 | 수용성 다당류 및 항산화제를 포함하는 복합체 |
| JP6726559B2 (ja) | 2016-08-03 | 2020-07-22 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| KR102610448B1 (ko) | 2016-08-12 | 2023-12-07 | 인프리아 코포레이션 | 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법 |
| JP7061834B2 (ja) | 2016-09-15 | 2022-05-16 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| JP6963960B2 (ja) | 2016-10-21 | 2021-11-10 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP7071660B2 (ja) | 2017-04-11 | 2022-05-19 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
| JP7091762B2 (ja) | 2017-04-17 | 2022-06-28 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターンの形成方法 |
| JPWO2018194123A1 (ja) | 2017-04-20 | 2020-05-14 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| KR102395705B1 (ko) | 2017-04-21 | 2022-05-09 | 후지필름 가부시키가이샤 | Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| JP6973274B2 (ja) | 2017-05-22 | 2021-11-24 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP6973279B2 (ja) | 2017-06-14 | 2021-11-24 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP6904302B2 (ja) | 2017-06-14 | 2021-07-14 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| WO2018230334A1 (ja) | 2017-06-15 | 2018-12-20 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| JP6922841B2 (ja) | 2017-06-21 | 2021-08-18 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP6939702B2 (ja) | 2017-06-21 | 2021-09-22 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| KR102611177B1 (ko) | 2017-07-24 | 2023-12-08 | 제이에스알 가부시끼가이샤 | 극단 자외선 또는 전자선 리소그래피용 금속 함유막 형성 조성물, 극단 자외선 또는 전자선 리소그래피용 금속 함유막 및 패턴 형성 방법 |
| JP7053625B2 (ja) | 2017-07-31 | 2022-04-12 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP6801115B2 (ja) | 2017-08-24 | 2020-12-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、レジスト膜付きマスクブランクス、レジスト膜付きマスクブランクスのパターン形成方法 |
| KR102404436B1 (ko) | 2017-08-31 | 2022-06-02 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| KR102285016B1 (ko) | 2017-08-31 | 2021-08-03 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| JP7044011B2 (ja) | 2017-09-13 | 2022-03-30 | 信越化学工業株式会社 | 重合性単量体、重合体、レジスト材料、及びパターン形成方法 |
| WO2019054282A1 (ja) | 2017-09-15 | 2019-03-21 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP6937834B2 (ja) | 2017-09-20 | 2021-09-22 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法 |
| TWI778122B (zh) | 2017-09-20 | 2022-09-21 | 日商富士軟片股份有限公司 | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法 |
| JP6866866B2 (ja) | 2017-09-25 | 2021-04-28 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP7010195B2 (ja) | 2017-11-29 | 2022-01-26 | 信越化学工業株式会社 | パターン形成方法 |
| JPWO2019123842A1 (ja) | 2017-12-22 | 2020-12-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、レジスト膜付きマスクブランクス、フォトマスクの製造方法、電子デバイスの製造方法 |
| JP6988760B2 (ja) | 2017-12-27 | 2022-01-05 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| KR102476090B1 (ko) | 2018-02-28 | 2022-12-09 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| KR102361263B1 (ko) | 2018-02-28 | 2022-02-14 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물용 수지의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| CN111788525B (zh) | 2018-02-28 | 2023-08-08 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法、树脂 |
| WO2019172054A1 (ja) | 2018-03-08 | 2019-09-12 | Jsr株式会社 | 感放射線性樹脂組成物及びその製造方法並びにレジストパターン形成方法 |
| KR20200122354A (ko) | 2018-03-26 | 2020-10-27 | 후지필름 가부시키가이샤 | 감광성 수지 조성물과 그 제조 방법, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| JP7185684B2 (ja) | 2018-03-27 | 2022-12-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法 |
| WO2019187803A1 (ja) | 2018-03-30 | 2019-10-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| EP3779596A4 (en) | 2018-03-30 | 2021-07-07 | FUJIFILM Corporation | NEGATIVE LIGHT SENSITIVE COMPOSITION FOR EUV LIGHT, METHOD OF PATTERN SHAPING AND METHOD OF MANUFACTURING AN ELECTRONIC DEVICE |
| JP6973265B2 (ja) | 2018-04-20 | 2021-11-24 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| KR20250021434A (ko) * | 2022-06-10 | 2025-02-13 | 닛산 가가쿠 가부시키가이샤 | 환경 부하를 저감시키기 위한 레지스트 하층막 형성용 조성물 |
-
2024
- 2024-02-02 CN CN202480008549.7A patent/CN120530365A/zh active Pending
- 2024-02-02 EP EP24750408.7A patent/EP4641300A4/en active Pending
- 2024-02-02 JP JP2024575016A patent/JPWO2024162459A1/ja active Pending
- 2024-02-02 KR KR1020257023933A patent/KR20250145002A/ko active Pending
- 2024-02-02 TW TW113104140A patent/TW202437015A/zh unknown
- 2024-02-02 WO PCT/JP2024/003426 patent/WO2024162459A1/ja not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003017002A1 (en) | 2001-08-20 | 2003-02-27 | Nissan Chemical Industries, Ltd. | Composition for forming antireflective film for use in lithography |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4641300A1 (en) | 2025-10-29 |
| WO2024162459A1 (ja) | 2024-08-08 |
| CN120530365A (zh) | 2025-08-22 |
| EP4641300A4 (en) | 2026-04-08 |
| TW202437015A (zh) | 2024-09-16 |
| JPWO2024162459A1 (https=) | 2024-08-08 |
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