KR20250006939A - 레지스트 하층막 형성용 조성물 - Google Patents

레지스트 하층막 형성용 조성물 Download PDF

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Publication number
KR20250006939A
KR20250006939A KR1020247038895A KR20247038895A KR20250006939A KR 20250006939 A KR20250006939 A KR 20250006939A KR 1020247038895 A KR1020247038895 A KR 1020247038895A KR 20247038895 A KR20247038895 A KR 20247038895A KR 20250006939 A KR20250006939 A KR 20250006939A
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South Korea
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forming
resist
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repeating unit
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Korean (ko)
Inventor
다이스케 마루야마
다카후미 엔도
다카히로 기시오카
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닛산 가가쿠 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020247038895A 2022-04-22 2023-04-21 레지스트 하층막 형성용 조성물 Pending KR20250006939A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-070865 2022-04-22
JP2022070865 2022-04-22
PCT/JP2023/015845 WO2023204287A1 (ja) 2022-04-22 2023-04-21 レジスト下層膜形成用組成物

Publications (1)

Publication Number Publication Date
KR20250006939A true KR20250006939A (ko) 2025-01-13

Family

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KR1020247038895A Pending KR20250006939A (ko) 2022-04-22 2023-04-21 레지스트 하층막 형성용 조성물

Country Status (7)

Country Link
US (1) US20250270359A1 (https=)
EP (1) EP4506756A4 (https=)
JP (3) JPWO2023204287A1 (https=)
KR (1) KR20250006939A (https=)
CN (1) CN119013627A (https=)
TW (1) TW202409732A (https=)
WO (1) WO2023204287A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017002A (ja) 2001-04-27 2003-01-17 Koninkl Philips Electronics Nv 低エネルギー準位変換蛍光体を有する付ガス放電灯

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3303745B2 (ja) 1997-10-31 2002-07-22 日本電気株式会社 半導体装置の製造方法
US7326509B2 (en) 2001-08-20 2008-02-05 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating for use in lithography
CN101523292B (zh) * 2006-10-12 2013-04-10 日产化学工业株式会社 利用4层系叠层体进行的半导体器件的制造方法
JP5518394B2 (ja) 2008-08-13 2014-06-11 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5297775B2 (ja) 2008-11-28 2013-09-25 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5572345B2 (ja) 2009-08-24 2014-08-13 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP2012022261A (ja) 2010-06-15 2012-02-02 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法
JP2012013872A (ja) * 2010-06-30 2012-01-19 Nissan Chem Ind Ltd イオン液体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP2012022191A (ja) * 2010-07-15 2012-02-02 Nissan Chem Ind Ltd イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP2012022258A (ja) 2010-07-16 2012-02-02 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法
WO2012017790A1 (ja) * 2010-08-02 2012-02-09 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP5953670B2 (ja) 2010-08-27 2016-07-20 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
KR101805239B1 (ko) 2010-10-18 2017-12-05 미쯔비시 케미컬 주식회사 리소그라피용 공중합체 및 그 제조 방법, 레지스트 조성물, 패턴이 형성된 기판의 제조 방법, 공중합체의 평가 방법, 공중합체 조성 해석 방법
JPWO2012081619A1 (ja) * 2010-12-17 2014-05-22 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP2012168279A (ja) 2011-02-10 2012-09-06 Tokyo Ohka Kogyo Co Ltd Ｅｕｖ用レジスト組成物、ｅｕｖ用レジスト組成物の製造方法、およびレジストパターン形成方法
JP6232812B2 (ja) 2012-08-08 2017-11-22 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP5956370B2 (ja) * 2013-03-12 2016-07-27 信越化学工業株式会社 珪素含有下層膜材料及びパターン形成方法
CN105324720B (zh) 2013-06-26 2020-01-03 日产化学工业株式会社 包含被置换的交联性化合物的抗蚀剂下层膜形成用组合物
JP2015010878A (ja) 2013-06-27 2015-01-19 日本精機株式会社 液面位置検出装置及び液面位置検出方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6394926B2 (ja) * 2014-03-26 2018-09-26 日産化学株式会社 添加剤及び該添加剤を含むレジスト下層膜形成組成物
JP6601039B2 (ja) 2014-07-31 2019-11-06 住友化学株式会社 レジスト組成物
JP6617459B2 (ja) 2014-07-31 2019-12-11 住友化学株式会社 レジスト組成物
JP6601041B2 (ja) 2014-07-31 2019-11-06 住友化学株式会社 レジスト組成物
JP6541508B2 (ja) 2014-08-25 2019-07-10 住友化学株式会社 塩、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6258830B2 (ja) * 2014-09-25 2018-01-10 Hoya株式会社 マスクブランク、マスクブランクの製造方法及び転写用マスクの製造方法
KR102696070B1 (ko) 2014-10-23 2024-08-16 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
JP2016090441A (ja) 2014-11-06 2016-05-23 東京応化工業株式会社 電子銃の電子線照射量の安定化方法、及びアウトガス評価方法
JP6585477B2 (ja) 2014-11-26 2019-10-02 住友化学株式会社 塩、樹脂、レジスト組成物及びレジストパターンの製造方法
US9580402B2 (en) 2015-01-08 2017-02-28 Sumitomo Chemical Company, Limited Salt, acid generator, photoresist composition, and method for producing photoresist pattern
EP4273625A3 (en) 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
CN108780739B (zh) 2016-03-11 2023-09-15 因普里亚公司 预图案化光刻模板、基于使用该模板的辐射图案化的工艺及形成该模板的工艺
CN109073977B (zh) 2016-04-28 2022-04-05 日产化学株式会社 抗蚀剂下层膜形成用组合物
JP6726559B2 (ja) 2016-08-03 2020-07-22 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR102791311B1 (ko) 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
JP7061834B2 (ja) 2016-09-15 2022-05-16 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6963960B2 (ja) 2016-10-21 2021-11-10 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
KR20190129916A (ko) 2017-04-11 2019-11-20 제이에스알 가부시끼가이샤 감방사선성 조성물 및 레지스트 패턴 형성 방법
JP7091762B2 (ja) 2017-04-17 2022-06-28 Jsr株式会社 感放射線性樹脂組成物及びレジストパターンの形成方法
WO2018194123A1 (ja) 2017-04-20 2018-10-25 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
IL270030B2 (en) 2017-04-21 2023-12-01 Fujifilm Corp A photosensitive composition for EUV light, a method for patterning and a method for producing an electronic device
KR20190140998A (ko) * 2017-05-02 2019-12-20 닛산 가가쿠 가부시키가이샤 과산화수소수용액에 대한 보호막형성 조성물
JP6973274B2 (ja) 2017-05-22 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6973279B2 (ja) 2017-06-14 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6904302B2 (ja) 2017-06-14 2021-07-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7127643B2 (ja) 2017-06-15 2022-08-30 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6922841B2 (ja) 2017-06-21 2021-08-18 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6939702B2 (ja) 2017-06-21 2021-09-22 信越化学工業株式会社 レジスト材料及びパターン形成方法
WO2019021975A1 (ja) 2017-07-24 2019-01-31 Jsr株式会社 極端紫外線又は電子線リソグラフィー用金属含有膜形成組成物、極端紫外線又は電子線リソグラフィー用金属含有膜及びパターン形成方法
JP7053625B2 (ja) 2017-07-31 2022-04-12 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2019039290A1 (ja) 2017-08-24 2019-02-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、レジスト膜付きマスクブランクス、レジスト膜付きマスクブランクスのパターン形成方法
KR102285016B1 (ko) 2017-08-31 2021-08-03 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
WO2019044231A1 (ja) 2017-08-31 2019-03-07 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP7044011B2 (ja) 2017-09-13 2022-03-30 信越化学工業株式会社 重合性単量体、重合体、レジスト材料、及びパターン形成方法
WO2019054282A1 (ja) 2017-09-15 2019-03-21 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP6937834B2 (ja) 2017-09-20 2021-09-22 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法
TWI778122B (zh) 2017-09-20 2022-09-21 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法
JP6866866B2 (ja) 2017-09-25 2021-04-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7010195B2 (ja) 2017-11-29 2022-01-26 信越化学工業株式会社 パターン形成方法
CN111512229B (zh) 2017-12-22 2023-11-21 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、带抗蚀剂膜的空白掩模
JP6988760B2 (ja) 2017-12-27 2022-01-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR102476090B1 (ko) 2018-02-28 2022-12-09 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
KR102361263B1 (ko) 2018-02-28 2022-02-14 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물용 수지의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
EP3761114A4 (en) 2018-02-28 2021-04-07 FUJIFILM Corporation Active light sensitive or radiation sensitive resin composition, resist film, pattern forming method, method for producing electronic device, and resin
WO2019172054A1 (ja) 2018-03-08 2019-09-12 Jsr株式会社 感放射線性樹脂組成物及びその製造方法並びにレジストパターン形成方法
EP3757676A4 (en) 2018-03-26 2021-04-07 FUJIFILM Corporation LIGHT SENSITIVE RESIN COMPOSITION, METHOD OF MANUFACTURING THEREFORE, RESIST FILM, METHOD OF MANUFACTURING A PATTERN, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
JP7185684B2 (ja) 2018-03-27 2022-12-07 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法
JP6992166B2 (ja) 2018-03-30 2022-01-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2019187881A1 (ja) 2018-03-30 2019-10-03 富士フイルム株式会社 Ｅｕｖ光用ネガ型感光性組成物、パターン形成方法、電子デバイスの製造方法
JP6973265B2 (ja) 2018-04-20 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017002A (ja) 2001-04-27 2003-01-17 Koninkl Philips Electronics Nv 低エネルギー準位変換蛍光体を有する付ガス放電灯

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