KR20230029606A - 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR20230029606A
KR20230029606A KR1020227041217A KR20227041217A KR20230029606A KR 20230029606 A KR20230029606 A KR 20230029606A KR 1020227041217 A KR1020227041217 A KR 1020227041217A KR 20227041217 A KR20227041217 A KR 20227041217A KR 20230029606 A KR20230029606 A KR 20230029606A
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KR
South Korea
Prior art keywords
film
phase shift
pattern
mask
transmittance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020227041217A
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English (en)
Korean (ko)
Inventor
오사무 노자와
게이시 아끼야마
Original Assignee
호야 가부시키가이샤
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Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20230029606A publication Critical patent/KR20230029606A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020227041217A 2020-06-30 2021-06-15 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Ceased KR20230029606A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020112702 2020-06-30
JPJP-P-2020-112702 2020-06-30
PCT/JP2021/022631 WO2022004350A1 (ja) 2020-06-30 2021-06-15 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20230029606A true KR20230029606A (ko) 2023-03-03

Family

ID=79315296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227041217A Ceased KR20230029606A (ko) 2020-06-30 2021-06-15 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Country Status (6)

Country Link
US (1) US20230194973A1 (https=)
JP (1) JP7618677B2 (https=)
KR (1) KR20230029606A (https=)
CN (1) CN115769144B (https=)
TW (1) TWI902828B (https=)
WO (1) WO2022004350A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06123961A (ja) 1992-10-12 1994-05-06 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法
JP2007279441A (ja) 2006-04-07 2007-10-25 Toshiba Corp ハーフトーン型位相シフトマスク及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003255513A (ja) * 2002-03-05 2003-09-10 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクおよびブランク並びにパターン転写方法
JP2004085760A (ja) * 2002-08-26 2004-03-18 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びそれを用いたハーフトーン型位相シフトマスク、並びにパターン転写法
TWI480675B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法
JP5165833B2 (ja) * 2005-02-04 2013-03-21 信越化学工業株式会社 フォトマスクブランク、フォトマスク、およびフォトマスクブランクの製造方法
JP2008310091A (ja) * 2007-06-15 2008-12-25 Shin Etsu Chem Co Ltd ハーフトーン型位相シフトマスク
JP6430155B2 (ja) * 2014-06-19 2018-11-28 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6502143B2 (ja) * 2015-03-27 2019-04-17 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10481485B2 (en) * 2015-05-15 2019-11-19 Hoya Corporation Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
WO2018181891A1 (ja) * 2017-03-31 2018-10-04 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法
JP6505891B2 (ja) * 2018-03-02 2019-04-24 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP6938428B2 (ja) * 2018-05-30 2021-09-22 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP7109996B2 (ja) * 2018-05-30 2022-08-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP7179543B2 (ja) * 2018-09-12 2022-11-29 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06123961A (ja) 1992-10-12 1994-05-06 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法
JP2007279441A (ja) 2006-04-07 2007-10-25 Toshiba Corp ハーフトーン型位相シフトマスク及びその製造方法

Also Published As

Publication number Publication date
TWI902828B (zh) 2025-11-01
JPWO2022004350A1 (https=) 2022-01-06
JP7618677B2 (ja) 2025-01-21
US20230194973A1 (en) 2023-06-22
CN115769144A (zh) 2023-03-07
CN115769144B (zh) 2025-08-05
WO2022004350A1 (ja) 2022-01-06
TW202217433A (zh) 2022-05-01

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