WO2022004350A1 - マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 - Google Patents

マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 Download PDF

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Publication number
WO2022004350A1
WO2022004350A1 PCT/JP2021/022631 JP2021022631W WO2022004350A1 WO 2022004350 A1 WO2022004350 A1 WO 2022004350A1 JP 2021022631 W JP2021022631 W JP 2021022631W WO 2022004350 A1 WO2022004350 A1 WO 2022004350A1
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Prior art keywords
film
phase shift
pattern
mask
transmittance
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English (en)
French (fr)
Japanese (ja)
Inventor
順 野澤
圭司 穐山
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Hoya Corp
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Hoya Corp
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Priority to JP2022533813A priority Critical patent/JP7618677B2/ja
Priority to KR1020227041217A priority patent/KR20230029606A/ko
Priority to US17/926,962 priority patent/US20230194973A1/en
Priority to CN202180041203.3A priority patent/CN115769144B/zh
Publication of WO2022004350A1 publication Critical patent/WO2022004350A1/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Definitions

  • the present invention relates to a mask blank, a phase shift mask, a method for manufacturing a phase shift mask, and a method for manufacturing a semiconductor device.
  • a fine pattern is formed by using a photolithography method.
  • a number of substrates called transfer masks are usually used to form this fine pattern.
  • the wavelength of the exposure light source for manufacturing semiconductor devices has been shortened from KrF excimer laser (wavelength 248 nm) to ArF excimer laser (wavelength 193 nm).
  • a halftone type phase shift mask is known in addition to a binary mask having a light shielding pattern made of a chrome-based material on a conventional translucent substrate.
  • a molybdenum silicide (MoSi) -based material is widely used for the phase shift film of the halftone type phase shift mask.
  • Patent Document 1 an etching stop film 3 and a phase shift layer 4 forming a predetermined pattern are sequentially formed on a transparent substrate 2, and a light-shielding property made of chromium is formed on the phase shift layer 4 formed in the region A.
  • a film pattern 5 is formed, and a semitransparent film pattern 6 made of molybdenum silicide is formed on the phase shift layer 4 formed in the region B.
  • a Levenson type phase shift mask and a halftone type phase shift mask are used.
  • a phase shift mask formed on the same substrate is disclosed.
  • Patent Document 2 of the halftone film 12 provided in the portion of the translucent substrate 11 on which the light-shielding pattern is formed and the portion where the semi-light-shielding pattern is formed, and the halftone film 12, the light-shielding film is shielded.
  • a phase shift mask including a light-shielding film 13 provided on a halftone film 12 in a portion where a pattern is formed is disclosed.
  • the semi-light-shielding pattern includes a first semi-light-shielding pattern made of a halftone film 12 and a second semi-light-shielding pattern made of a halftone film having a smaller size than the first semi-light-shielding pattern.
  • the light transmitting path 32 in the region including the pattern contains an element that adjusts the light transmittance of the light transmitting path 32.
  • the transmittance suitable for obtaining a good phase shift effect may vary depending on the type of pattern. That is, depending on the type and pitch of the pattern to be transferred, there may be a case where it is preferable to increase the transmittance and a case where it is preferable to suppress the transmittance.
  • phase shift mask In the phase shift mask described in Patent Document 1, a light-shielding film pattern is formed in the region A, and a semipermeable membrane pattern 5 is formed in the other region B, and the phase shift mask itself is useful.
  • a pattern in which different phase shift effects occur in which a Levenson type phase shift pattern is provided in the region A and a halftone type phase shift pattern is provided in the region B, is mixed in a plan view. Is. It is a halftone type phase shift mask and does not meet the demand for providing halftone type phase shift patterns with different transmittances.
  • phase shift mask described in Patent Document 2 is a process of reducing the light transmittance of the injected region by implanting Ga ions into the halftone mask blank. Such processing is not performed when producing a normal mask, and it is necessary to equip the mask manufacturing apparatus with an ion implantation mechanism, which complicates the mask manufacturing process. Then, since the ions injected into the mask blank can diffuse from a desired region, it is difficult to meet the demand for producing a fine pattern.
  • the present invention has been made to solve the conventional problems, and is a process (mask) for manufacturing a phase shift mask from a mask blank in a mask blank provided with a phase shift film on a translucent substrate.
  • a mask blank provided with a phase shift film capable of producing patterns having different transmission rates with desired accuracy without complicating the manufacturing process) and obtaining a desired phase shift function in each pattern.
  • the purpose is to provide.
  • Another object of the present invention is to provide a phase shift mask and a method for manufacturing a phase shift mask manufactured by using this mask blank.
  • An object of the present invention is to provide a method for manufacturing a semiconductor device using such a phase shift mask.
  • the present invention has the following configurations.
  • (Structure 1) A mask blank with a phase shift film on a translucent substrate.
  • a transmittance adjusting film is provided on the phase shift film.
  • the phase shift film is 150 degrees or more and 210 degrees or less with respect to the exposure light of the ArF excimer laser that has passed through the phase shift film and the exposure light that has passed through the air for the same distance as the thickness of the phase shift film.
  • Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • a phase shift mask provided with a phase shift film having a first pattern on a translucent substrate.
  • a transmittance adjusting film having a second pattern is provided on the phase shift film.
  • the phase shift film is 150 degrees or more and 210 degrees or less with respect to the exposure light of the ArF excimer laser that has passed through the phase shift film and the exposure light that has passed through the air for the same distance as the thickness of the phase shift film.
  • phase shift mask according to any one of configurations 10 to 17, wherein a light-shielding film having a third pattern is provided on the transmittance adjusting film.
  • Structure 19 A method for manufacturing a phase shift mask using the mask blank according to the configuration 9. The step of forming the first pattern on the light-shielding film by dry etching and A step of forming a first pattern on each of the transmittance adjusting film and the phase shift film by dry etching using the light-shielding film having the first pattern as a mask.
  • a method for manufacturing a phase shift mask which comprises a step of forming a third pattern on the light-shielding film by dry etching.
  • the mask blank of the present invention can produce patterns having different transmittances with desired accuracy without complicating the mask manufacturing process, and can obtain a desired phase shift function in each pattern. Can be provided.
  • the maximum film of the transmittance adjusting film for satisfying that the transmittance of the exposure light transmitted through the laminated structure of the phase shift film and the transmittance adjusting film, which is derived from the results of the optical simulations A3 and B3, is equal to or more than a predetermined value. It is a figure which shows the relationship between the thickness and the extinction coefficient k. It is sectional drawing which shows the structure of the mask blank in 3rd Embodiment of this invention. It is sectional drawing which shows the structure of the phase shift mask in 3rd Embodiment of this invention. It is sectional drawing which shows the main part of the manufacturing process of the phase shift mask in the 3rd Embodiment of this invention. It is sectional drawing which shows the main part of the manufacturing process of the phase shift mask in the 3rd Embodiment of this invention.
  • phase shift film is 150 degrees or more and 210 degrees or less with respect to the exposure light of the ArF excima laser that has passed through the phase shift film and the exposure light that has passed through the air for the same distance as the thickness of the phase shift film.
  • the exposure light of the ArF excima laser makes the phase shift film have a predetermined transmittance. It is transparent and can obtain the desired phase shift function described above.
  • a desired phase shift function can be obtained for the exposure light transmitted through the phase shift film and the transmittance adjusting film, and a transmittance significantly different from that of the exposure light transmitted through the phase shift film can be obtained. Further studies were conducted on the configuration of the transmittance adjusting film as described above.
  • the present inventors increase the phase difference by 20 degrees with respect to the exposure light transmitted through the phase shift film and the exposure light transmitted through the laminated structure of the phase shift film and the transmittance adjusting film.
  • the conditions for satisfying the following were examined.
  • the present inventors focused on the relationship between the maximum film thickness of the transmittance adjusting film and the refractive index n, and performed optical simulation A1 on the phase shift film and the transmittance adjusting film.
  • the transmittance for satisfying that the increase amount of the phase difference is 20 degrees or less while changing the film thickness of the transmittance adjusting film in the range of the refractive index n in the range of 1.2 to 2.0.
  • the maximum film thickness of the adjusting film was calculated.
  • the film thickness of the phase shift film was 60.4 nm
  • the refractive index n was 2.61
  • the extinction coefficient k was 0.36.
  • the above-mentioned refractive index n and extinction coefficient k are for the wavelength of ArF excimer laser light (wavelength 193 nm), and are the same thereafter unless otherwise specified.
  • an intermediate film was set between the phase shift film and the transmittance adjusting film.
  • This interlayer film is provided on the assumption that the phase shift film is not etched when the transmittance adjusting film is patterned by dry etching.
  • the film thickness of this interlayer film was 3 nm, the refractive index n was 1.56, and the extinction coefficient k was 0.00. Since the interlayer film has such optical characteristics, the influence on the result of the optical simulation A1 is minor.
  • the relationship between the refractive index n of the transmittance adjusting film and the maximum film thickness was arranged.
  • the amount of increase in the phase difference between the exposure light transmitted through the phase shift film and the exposure light transmitted through the laminated structure of the phase shift film and the transmittance adjusting film, which is derived from the result of the optical simulation A1 is 20.
  • Curves A11, A12, and A13 in FIG. 9 indicate the maximum film thickness of the transmittance adjusting film for satisfying that the amount of increase in the phase difference is 20 degrees or less, 15 degrees or less, and 10 degrees or less, respectively. There is.
  • the relational expression (formula of curve A11) of the maximum film thickness of the transmittance adjusting film for satisfying that the increase amount of the phase difference is 20 degrees or less shown in FIG. 9 is as follows.
  • d Umax -17.63 x n U 3 + 142.0 x n U 2 3364.9 x n U + 315.8
  • the curves A12 and A13 satisfying that the amount of increase in the phase difference is 15 degrees or less and 10 degrees or less are located below the curves A11.
  • the relational expression (formula of the curve A12) of the maximum film thickness of the transmittance adjusting film for satisfying that the increase amount of the phase difference is 15 degrees or less is as follows.
  • d Umax -70.62 ⁇ n U 3 + 406.5 ⁇ n U 2 -795.7 ⁇ n U +540.1
  • the relational expression (formula of the curve A13) of the maximum film thickness of the transmittance adjusting film for satisfying that the increase amount of the phase difference is 10 degrees or less is as follows.
  • d Umax 201.1 ⁇ n U 4 -1407 ⁇ n U 3 + 3700 ⁇ n U 2 -4356 ⁇ n U +1956
  • the film thickness d U [nm] of the transmittance adjusting film and the refractive index n U are determined. Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 It has been found that when the condition is satisfied, the amount of increase in the phase difference between the exposure light transmitted through the phase shift film and the exposure light transmitted through the laminated structure of the phase shift film and the transmittance adjusting film is 20 degrees or less. Further, the film thickness d U [nm] of the transmittance adjusting film and the refractive index n U are determined.
  • the phase shift film has a structure in which the first layer, the second layer, and the third layer are laminated from the translucent substrate side.
  • the first layer had a film thickness of 41 nm, a refractive index of 2.61, and an extinction coefficient of 0.36.
  • the second layer had a film thickness of 24 nm, a refractive index of 2.18, and an extinction coefficient of 0.12.
  • the third layer had a film thickness of 4 nm, a refractive index n of 1.56, and an extinction coefficient k of 0.00.
  • the third layer can also have the function of the above-mentioned interlayer film, an interlayer film is not provided between the phase shift film and the transmittance adjusting film. Based on the result of this optical simulation B1, the relationship between the refractive index n of the transmittance adjusting film and the maximum film thickness was arranged.
  • FIG. 10 is a diagram comparing the results of optical simulation A1 and optical simulation B1 with respect to the relationship between the maximum film thickness of the transmittance adjusting film and the refractive index n.
  • the curves A11, A12 and A13 shown in FIG. 10 are the results of the optical simulation A1 and are the same as those shown in FIG.
  • the curves B11, B12, and B13 shown in FIG. 10 are the results of the optical simulation B1, respectively, to satisfy that the amount of increase in the phase difference is 14 degrees or less, 11 degrees or less, and 6 degrees or less, respectively.
  • the maximum film thickness of the transmittance adjusting film is shown.
  • the curve A11 is lower than the curve B11 (the curve in which the amount of increase in the phase difference is a threshold value of 14 degrees). This is because the transmittance adjusting film satisfying the relationship of the equation (1) derived from the curve A11 is the amount of increase in the phase difference even when the transmittance adjusting film is provided on the phase shift film used in the optical simulation B1. Shows that is 14 degrees or less.
  • curve A12 is below curve B12. This is because the transmittance adjusting film satisfying the relationship of the equation (1-A12) derived based on the curve A12 has a phase difference even when the transmittance adjusting film is provided on the phase shift film used in the optical simulation B1. It shows that the amount of increase is 11 degrees or less.
  • curve A13 is below curve B13.
  • the transmittance adjusting film satisfying the relationship of the equation (1-A13) derived based on the curve A13 has a phase difference even when the transmittance adjusting film is provided on the phase shift film used in the optical simulation B1. It shows that the amount of increase is 6 degrees or less.
  • the present inventors assume that a transmittance that is significantly different from the transmittance of the exposed light transmitted through the phase shift film can be obtained, and that the transmittance of the exposed light transmitted through the phase shift film is Tp.
  • the ratio of the transmittance Ts of the exposure light transmitted through the laminated structure of the shift film and the transmittance adjusting film (that is, Ts / Tp; hereinafter, this may be simply referred to as the transmittance ratio) is 0.5 or less. The conditions were examined to meet the requirements.
  • the present inventors focused on the relationship between the minimum film thickness of the transmittance adjusting film and the extinction coefficient k, and performed optical simulations A2 and B2 for the phase shift film and the transmittance adjusting film, respectively.
  • the optical simulations A2 and B2 in order to satisfy that the transmittance ratio is 0.5 or less while changing the film thickness of the transmittance adjusting film in the range of the extinction coefficient k in the range of 1.5 to 2.0. , The minimum thickness of the transmittance adjusting film was calculated.
  • the phase shift film the same one as the optical simulation A1 was used in the optical simulation A2, and the same one as the optical simulation B1 was used in the optical simulation B2.
  • FIG. 11 is a diagram comparing the results of the optical simulation A2 and the optical simulation B2 with respect to the relationship between the minimum film thickness of the transmittance adjusting film and the extinction coefficient k.
  • the curves A21 and A22 shown in FIG. 11 are the results of the optical simulation A2, and the minimum transmittance adjusting film for satisfying that the transmittance ratios are 0.50 or less and 0.45 or less, respectively.
  • the film thickness is shown respectively.
  • Curves B21 and B22 are the results of the optical simulation B2, and show the minimum thickness of the transmittance adjusting film for satisfying that the transmittance ratios are 0.50 or less and 0.43 or less, respectively. ..
  • the relational expression (formula of the curve A21) of the minimum film thickness of the transmittance adjusting film for satisfying that the ratio of the transmittance is 0.5 or less shown in FIG. 11 is as follows.
  • d Umin -2.805 x k U 3 + 19.48 x k U 2 433.58 x k U + 38.11
  • the curve A22 satisfying that the transmittance ratio is 0.45 or less is located above the curve A21.
  • the relational expression (formula of the curve A22) of the minimum film thickness of the transmittance adjusting film for satisfying that the ratio of the transmittance is 0.45 or less is as follows.
  • d Umin 8.592 ⁇ k U 3 -38.60 ⁇ k U 2 + 54.28 ⁇ k U -15.36
  • the film thickness d U [nm] of the transmittance adjusting film and the extinction coefficient k U are determined. Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • the ratio of the transmittance of the exposure light transmitted through the laminated structure of the phase shift film and the transmittance adjusting film to the transmittance of the exposure light transmitted through the phase shift film is 0.5 or less. I found it. Further, the film thickness d U [nm] of the transmittance adjusting film and the extinction coefficient k U are determined.
  • the curve A21 is above the curve B21 (a curve having a threshold ratio of a transmittance ratio of 0.50). This is because the transmittance adjusting film satisfying the relationship of the equation (2) derived from the curve A21 has a transmittance ratio even when the transmittance adjusting film is provided on the phase shift film used in the optical simulation B2. It shows that it becomes 0.50 or less.
  • curve A22 is above curve B22 (a threshold curve with a transmittance ratio of 0.43). This is because the transmittance adjusting film satisfying the relationship of the equation (2-A22) derived based on the curve A22 has a transmittance even when it is provided on the phase shift film used in the optical simulation B2. It shows that the ratio is 0.45 or less. As a result, if the transmittance adjusting film satisfies the relationship of the equation (2), the above-mentioned transmittance ratio is 0.50 or less regardless of the optical characteristics of the phase shift film provided under the film. Means.
  • the present inventors have described above-mentioned increase in the phase difference by 20 degrees or less in the case of the transmittance adjusting film satisfying the relationship of the equations (1) and (2), and the above-mentioned transmittance. It was found that the ratio of was 0.50 or less.
  • the present invention has been made as a result of the above diligent studies.
  • FIG. 1 is a cross-sectional view showing the configuration of the mask blank 10 according to the first embodiment of the present invention.
  • a phase shift film 2 an intermediate film 3, a transmission rate adjusting film 4, a light shielding film 5, a hard mask film 6 and a resist film 7 are arranged in this order on a translucent substrate 1. It has a laminated structure.
  • the translucent substrate 1 can be formed of, in addition to synthetic quartz glass, quartz glass, aluminosilicate glass, soda lime glass, low thermal expansion glass (SiO 2- TiO 2 glass, etc.) and the like.
  • synthetic quartz glass has a high transmittance for ArF excimer laser light and is particularly preferable as a material for forming the translucent substrate 1 of the mask blank.
  • the refractive index n at the wavelength (about 193 nm) of the ArF exposure light of the material forming the translucent substrate 1 is preferably 1.5 or more and 1.6 or less, and 1.52 or more and 1.59 or less. More preferably, it is more preferably 1.54 or more and 1.58 or less.
  • the phase shift film 2 has a phase difference of 150 between the transmitted ArF exposed light and the light that has passed through the air by the same distance as the thickness of the phase shift film 2. It is preferable that the temperature is adjusted to be in the range of 210 degrees or more and 210 degrees or less.
  • the phase difference in the phase shift film 2 is preferably 155 degrees or more, and more preferably 160 degrees or more.
  • the phase difference in the phase shift film 2 is preferably 195 degrees or less, more preferably 190 degrees or less.
  • the phase shift film 2 preferably transmits the exposure light with a transmittance of 12% or more.
  • NTD Near Tone Development
  • a bright field mask a transfer mask having a high pattern aperture ratio
  • the bright field phase shift mask by setting the transmittance of the phase shift film with respect to the exposed light to 12% or more, the balance between the 0th-order light and the 1st-order light of the light transmitted through the translucent portion is improved.
  • the phase shift film 2 transmits at a transmittance of 19% or more, and transmits at a transmittance of 28% or more. Is more preferable.
  • the transmittance of the phase shift film 2 with respect to ArF exposure light is preferably 50% or less, and more preferably 40% or less. If the transmittance of the phase shift film 2 with respect to ArF exposure light exceeds 50%, the influence of side lobes becomes too strong, which is not preferable.
  • the thickness of the phase shift film 2 is preferably 90 nm or less, more preferably 80 nm or less. On the other hand, the thickness of the phase shift film 2 is preferably 40 nm or more, and more preferably 50 nm or more.
  • the refractive index n of the phase shift film is preferably 2.0 or more, and more preferably 2.1 or more, in order to satisfy the above-mentioned optical characteristics and various conditions related to the film thickness. ..
  • the refractive index n of the phase shift film 2 is preferably 3.0 or less, and more preferably 2.9 or less.
  • the extinction coefficient k of the phase shift film 2 is preferably 0.9 or less, more preferably 0.6 or less. Further, the extinction coefficient k of the phase shift film 2 is preferably 0.1 or more.
  • the refractive index n and the extinction coefficient k of the thin film including the phase shift film 2 are not determined only by the composition of the thin film.
  • the film density and crystal state of the thin film are also factors that influence the refractive index n and the extinction coefficient k. Therefore, various conditions for forming a thin film by reactive sputtering are adjusted so that the thin film has a desired refractive index n and an extinction coefficient k.
  • the ratio of the mixed gas of the noble gas and the reactive gas (oxygen gas, nitrogen gas, etc.) when forming a film by reactive sputtering is performed. It is not limited to adjusting.
  • the phase shift film 2 is formed of a material containing a non-metal element and silicon.
  • a thin film formed of a material containing silicon and a transition metal tends to have a high extinction coefficient k.
  • the phase shift film 2 may be formed of a material containing a non-metal element, silicon, and a transition metal.
  • the transition metal contained in this case include molybdenum (Mo), tantalum (Ta), tungsten (W), titanium (Ti), chromium (Cr), hafnium (Hf), nickel (Ni), and vanadium (V).
  • the phase shift film 2 is preferably formed of a material composed of a non-metal element and silicon, or a material composed of a metalloid element, a non-metal element and silicon.
  • phase shift film 2 contains a metalloid element
  • metalloid elements if one or more metalloid elements selected from boron, germanium, antimony and tellurium are contained, it can be expected that the conductivity of silicon used as a sputtering target will be enhanced.
  • the phase shift film 2 contains a non-metal element, it is preferable to contain one or more non-metal elements selected from nitrogen, oxygen, carbon, fluorine and hydrogen.
  • This non-metal element also includes noble gases such as helium (He), argon (Ar), krypton (Kr) and xenon (Xe).
  • the total content of nitrogen and oxygen is preferably 40 atomic% or more, and more preferably 50 atomic% or more.
  • the phase shift film 2 may be formed of a material containing a metal element and oxygen.
  • the metal element contained in this case include zirconium (Zr), tantalum (Ta), tungsten (W), titanium (Ti), chromium (Cr), molybdenum (Mo), hafnium (Hf), and nickel (Ni). ), Vanadium (V), ruthenium (Ru), zirconium (Rh), zinc (Zn), niobium (Nb), palladium (Pd) and the like, or an alloy of these metals.
  • the oxygen content of the phase shift film 2 is preferably 40 atomic% or more, and more preferably 50 atomic% or more.
  • an intermediate film 3 containing silicon and oxygen is provided between the phase shift film 2 and the transmittance adjusting film 4.
  • the interlayer film 3 functions as an etching stopper film for the phase shift film 2, and the thickness of the film is sufficient to function as an etching mask until the dry etching for forming a pattern on the phase shift film 2 is completed. Is enough.
  • the interlayer film 3 is made of the same material as the substrate 1. By doing so, when a pattern is formed on the phase shift film 2 by dry etching, even if the surface of the exposed translucent substrate 1 is etched by the influence of the etching gas, the interlayer film 3 is also formed. It will be etched in the same amount.
  • the mask blank of the present embodiment is preferable in that the reliability of the phase shift function can be enhanced by providing the interlayer film 3.
  • the oxygen content of the interlayer film 3 is preferably 50 atomic% or more, more preferably 55 atomic% or more, and further preferably 60 atomic% or more.
  • the thickness of the interlayer film 3 is preferably 1 nm or more, and more preferably 2 nm or more.
  • the thickness of the interlayer film 3 is preferably 10 nm or less, and more preferably 5 nm or less.
  • the mask blank 10 has a transmittance adjusting film 4 on the interlayer film 3.
  • the transmittance adjusting film 4 has the following equation (1) and the following equation (1) when the refractive index at the wavelength of the exposure light is n U , the extinction coefficient at the wavelength of the exposure light is k U , and the thickness is d U [nm]. Both satisfy the relationship of equation (2). Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • the transmittance adjusting film 4 satisfying the formula (1), the exposure light transmitted through the phase shift film 2 is exposed to the exposure light transmitted through the laminated structure of the phase shift film 2 and the transmittance adjusting film 4. It is possible to satisfy the condition that the amount of increase in the phase difference with respect to light is 20 degrees or less. If the transmittance adjusting film 4 satisfies the equation (2), the exposure is transmitted through the laminated structure of the phase shift film 2 and the transmittance adjusting film 4 with respect to the transmittance of the exposure light transmitted through the phase shift film 2. The condition that the ratio of the light transmittance is 0.50 or less can be satisfied.
  • the refractive index n U of the transmittance adjusting film 4 is preferably 1.2 or more, and more preferably 1.5 or more. Further, the refractive index n U of the transmittance adjusting film 4 is preferably 3.0 or less, and more preferably 2.5 or less.
  • the extinction coefficient k U of the transmittance adjusting film 4 is preferably 1.5 or more, and more preferably 2.0 or more. Further, the extinction coefficient k U of the transmittance adjusting film 4 is preferably 3.0 or less, and more preferably 2.5 or less. Further, it is preferable that the extinction coefficient k U and the thickness d U [nm] of the transmittance adjusting film 4 satisfy the relationship of the following formula (3). Equation (3) d U ⁇ 8.646 ⁇ k U 2 -38.42 ⁇ k U +61.89
  • the laminated body transmittance is 2% or more while changing the film thickness of the transmittance adjusting film in the range of the extinction coefficient k in the range of 1.5 to 2.0.
  • the maximum thickness of the transmittance adjusting film was calculated.
  • the same optical simulations A1 and A2 were used in the optical simulation A3, and the same optical simulations B1 and B2 were used in the optical simulation B3.
  • FIG. 12 is a diagram comparing the results of the optical simulation A3 and the optical simulation B3 with respect to the relationship between the maximum film thickness of the transmittance adjusting film and the extinction coefficient k.
  • the curves A31 and A32 shown in FIG. 12 are the results of the optical simulation A3, and the maximum thickness of the transmittance adjusting film for satisfying that the laminated body transmittance is 2% or more and 4% or more, respectively. Are shown respectively.
  • Curves B31 and B32 are the results of the optical simulation B2, and show the maximum film thickness of the transmittance adjusting film for satisfying that the laminated body transmittance is 2% or more and 4% or more, respectively.
  • the relational expression (formula of the curve A31) of the maximum film thickness of the transmittance adjusting film for satisfying that the laminated body transmittance is 2% or more shown in FIG. 12 is as follows.
  • d Umax 8.646 ⁇ k U 2 -38.42 ⁇ k U +61.89
  • the curve A32 satisfying that the laminated body transmittance is 4% or more is located below the curve A31.
  • the relational expression (mathematical expression of the curve A32) of the maximum film thickness of the transmittance adjusting film for satisfying that the laminated body transmittance is 4% or more is as follows.
  • d Umax 5.101 ⁇ k U 2 -22.46 ⁇ k U +38.44
  • the film thickness d U [nm] of the transmittance adjusting film and the extinction coefficient k U are determined. Equation (3) d U ⁇ 8.646 ⁇ k U 2 -38.42 ⁇ k U +61.89 It was found that the laminated body transmittance was 2% or more when the condition was satisfied. Further, the film thickness d U [nm] of the transmittance adjusting film and the extinction coefficient k U are determined. Formula (3-A32) d U ⁇ 5.101 ⁇ k U 2 -22.46 ⁇ k U +38.44 It was found that the laminated body transmittance was 4% or more when the condition was satisfied.
  • the curve A31 is lower than the curve B31 (a curve having a threshold value of 2% or more of the laminated body transmittance). This is because the transmittance adjusting film satisfying the relationship of the equation (3) derived from the curve A31 has a laminated body transmittance even when it is provided on the phase shift film used in the optical simulation B3. It shows that it will be 2% or more.
  • the curve A32 is lower than the curve B32 (a curve having a threshold value of 4% or more for the laminated body transmittance). This is because the transmittance adjusting film satisfying the relationship of the equation (3-A32) derived from the curve A32 is transparent even when the transmittance adjusting film is provided on the phase shift film used in the optical simulation B3.
  • the transmittance adjusting film 4 preferably contains silicon, and more preferably contains silicon and a non-metal element. Further, it is preferable that the transmittance adjusting film 4 contains silicon and nitrogen in that desired characteristics can be easily obtained.
  • the transmittance adjusting film 4 preferably has a total content of silicon and nitrogen of 97 atomic% or more, and more preferably 99 atomic% or more.
  • the mask blank 10 has a structure in which a light-shielding film 5 is provided on the transmittance adjusting film 4.
  • the light-shielding film 5 is preferably formed of a material containing chromium.
  • the material containing chromium forming the light-shielding film 5 include a material containing one or more elements selected from oxygen, nitrogen, carbon, boron and fluorine in chromium, in addition to the chromium metal.
  • the material for forming the light-shielding film 5 is one or more elements selected from oxygen, nitrogen, carbon, boron and fluorine in chromium.
  • a material containing is preferable.
  • the chromium-containing material forming the light-shielding film 5 may contain one or more elements of molybdenum, indium and tin. By containing one or more elements of molybdenum, indium and tin, the etching rate for a mixed gas of chlorine-based gas and oxygen gas can be made faster.
  • the light-shielding film 5 may have a structure in which a layer made of a material containing chromium and a layer made of a material containing silicon are laminated in this order from the transmittance adjusting film 4 side.
  • the specific matters of the material containing chromium in this case are the same as in the case of the light-shielding film 5 described above.
  • the hard mask film 6 formed of a material having etching selectivity for the etching gas used when etching the light-shielding film 5 is further laminated on the light-shielding film 5. Since the hard mask film 6 is basically not limited in optical density, the thickness of the hard mask film 6 can be made significantly thinner than the thickness of the light-shielding film 5.
  • the resist film 7 made of an organic material needs only have a film thickness sufficient to function as an etching mask until the dry etching for forming a pattern on the hard mask film 6 is completed. Therefore, the thickness of the resist film 7 can be significantly reduced as compared with the conventional case.
  • the thinning of the resist film 7 is effective in improving the resist resolution and preventing the pattern from collapsing, and is extremely important in meeting the demand for miniaturization.
  • the hard mask film 6 is preferably made of a material containing silicon.
  • the hard mask film 6 in this case tends to have low adhesion to the resist film of the organic material. Therefore, it is preferable to apply HMDS (Hexamethyldisilazane) treatment on the surface of the hard mask film 6 to improve the adhesion of the surface.
  • HMDS Hexamethyldisilazane
  • the hard mask film 6 in this case is more preferably formed of SiO 2 , SiN, SiON, or the like.
  • the material of the hard mask film 6 when the light-shielding film 5 is made of a material containing chromium
  • a material containing tantalum can also be applied.
  • the material containing tantalum in this case include, in addition to tantalum metal, a material in which tantalum contains one or more elements selected from nitrogen, oxygen, boron and carbon.
  • Ta, TaN, TaO, TaON, TaBN, TaBO, TaBON, TaCN, TaCO, TaCON, TaBCN, TaBOCN, and the like can be mentioned.
  • the hard mask film 6 is preferably formed of the above-mentioned material containing chromium.
  • the resist film 7 made of an organic material is formed with a film thickness of 100 nm or less in contact with the surface of the hard mask film 6.
  • an SRAF Sub-Resolution Assist Feature
  • the transfer pattern phase shift pattern
  • the resist film 7 has a film thickness of 80 nm or less.
  • the surface of the hard mask film 6 is subjected to silylation treatment using HMDS (Hexamethyldisilazane) or the like before forming the resist film. Is preferred.
  • the phase shift film 2, the intermediate film 3, the transmittance adjusting film 4, the light shielding film 5, and the hard mask film 6 are formed by sputtering, but any sputtering such as DC sputtering, RF sputtering, and ion beam sputtering can be applied. be.
  • any sputtering such as DC sputtering, RF sputtering, and ion beam sputtering can be applied.
  • the resist film 7 is formed by a spin coating method.
  • the configuration of the mask blank 10 of the present embodiment has been described with reference to FIG. 1, but the present invention is not limited to this configuration, and includes, for example, an intermediate film 3, a hard mask film 6, and a resist film 7. It may be a mask blank having no configuration. Further, the mask blank may have a structure in which an etching stopper film is provided between the substrate 1 and the phase shift film 2. Examples of the material of the etching stopper film in this case include a material containing aluminum, silicon and oxygen, a material containing aluminum, hafnium and oxygen, a material containing hafnium and oxygen, and a material containing chromium. .. These points are the same in the mask blank of the second embodiment described later.
  • phase shift mask 100 (see FIG. 2) according to the first embodiment, a phase shift film (phase shift pattern) 2a having the first pattern is provided on the translucent substrate 1, and the phase shift pattern 2a is provided.
  • a transmittance adjusting film (transmittance adjusting pattern) 4b having a second pattern is provided on the top.
  • an intermediate film (intermediate pattern) 3b having a second pattern is provided between the phase shift pattern 2a and the transmittance adjusting pattern 4b.
  • a light-shielding film (light-shielding pattern) 5c having a third pattern is provided on the transmittance adjusting film 4b.
  • the phase shift mask 100 includes a phase shift pattern 2a on the translucent substrate 1, and an intermediate pattern 3b and a transmittance adjustment pattern 4b are provided on the phase shift pattern 2a.
  • a light-shielding pattern 5c is provided, and the phase shift pattern 2a is the exposure light that has passed through the air for the same distance as the thickness of the phase shift pattern 2a with respect to the exposure light of the ArF excima laser that has passed through the phase shift pattern 2a.
  • a phase difference of 150 degrees or more and 210 degrees or less is generated between them, and the transmittance of the transmittance adjustment pattern 4b at the wavelength of the exposure light is n U , the extinction coefficient at the wavelength of the exposure light is k U , and the thickness is d U.
  • Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • the specific configurations of the translucent substrate 1, the phase shift pattern 2a, the intermediate pattern 3b, the transmittance adjustment pattern 4b, and the light shielding pattern 5c in the phase shift mask 100 are the same as in the case of the mask blank 10. ..
  • FIGS. 3 and 4 are schematic cross-sectional views of the main part.
  • a first pattern to be formed on the phase shift film 2 is drawn with an electron beam on the resist film 7 formed by the spin coating method in the mask blank 10 shown in FIG. 1, and further, a predetermined process such as a development process is performed. (See FIG. 3A) to form a resist film (resist pattern) 7a having the first pattern.
  • the first pattern includes a phase shift pattern formed on the phase shift film 2 to exert a phase shift effect, and a pattern for alignment marks (opening on the left side in FIG. 2).
  • the transmittance adjusting film (transmittance adjusting pattern) 4a having the first pattern
  • the intermediate film (intermediate pattern) 3a having the first pattern
  • a shift film (phase shift pattern) 2a' is formed (see FIG. 3D).
  • the hard mask pattern 6a is removed.
  • the phase shift film 2a is formed when the transmittance adjustment pattern 4b is formed in the step of forming the transmittance adjustment pattern 4b on the transmittance adjustment film 4 described later by dry etching. It is preferable to adjust the thickness of the remaining portion of the phase shift film 2a'so that the remaining portion of'is also removed almost at the same time.
  • a resist film is formed by a spin coating method. After that, a pattern to be formed on the transmittance adjusting film 4 is drawn on the resist film with an electron beam, and further a predetermined process such as a development process is performed to obtain a resist film (resist pattern) having a second pattern. 8b is formed (see FIG. 4A). After that, using the resist pattern 8b as a mask, dry etching using a mixed gas of chlorine-based gas and oxygen gas is performed on the light-shielding film 5a to form a light-shielding film (light-shielding pattern 5b) having a second pattern (FIG. 4 (a)).
  • the resist pattern 8b is removed and a cleaning treatment is performed, dry etching using a fluorine-based gas is performed on the transmittance adjusting film 4 using the light-shielding pattern 5b as a mask, and the transmittance adjusting film having the second pattern is performed.
  • Transmittance adjustment pattern 4b is formed (see FIG. 4B).
  • the exposed remaining portion of the phase shift film (phase shift pattern) 2a'partially having the first pattern is also removed to form the phase shift film (phase shift pattern) 2a' having the first pattern. (See FIG. 4 (b)).
  • the exposed portion of the translucent substrate 1 may be dug up by the fluorine-based gas, but as described above, the interlayer film 3 is made of the same material as the translucent substrate 1, so that the translucent substrate 1 is translucent. It is possible to secure a desired phase difference between the exposed portion of the sex substrate 1 and the exposed portion of the phase shift pattern 2a.
  • a resist film is formed by a spin coating method. After that, a pattern to be formed on the light-shielding film 5 is drawn on the resist film with an electron beam, and further a predetermined process such as a development process is performed to obtain a resist film (resist pattern) 9c having a third pattern. Form (see FIG. 4 (d)). After that, using the resist pattern 9c as a mask, dry etching using a mixed gas of chlorine-based gas and oxygen gas is performed on the light-shielding pattern 5b to form a light-shielding film (light-shielding pattern) 5c having a third pattern (FIG. 4 (d)). Then, after removing the resist pattern 9c, a cleaning step is performed. In this way, the phase shift mask 100 shown in FIG. 2 can be manufactured.
  • a phase shift mask 100 manufactured by using the phase shift mask 100 of the first embodiment or the mask blank 10 of the first embodiment is used on a semiconductor substrate.
  • the feature is that the transfer pattern is exposed and transferred to the resist film. Therefore, when the phase shift mask 100 of the first embodiment is exposed and transferred to the resist film on the semiconductor device, a pattern can be formed on the resist film on the semiconductor device with an accuracy sufficiently satisfying the design specifications.
  • FIG. 5 is a cross-sectional view showing the configuration of the mask blank 20 according to the second embodiment of the present invention.
  • the mask blank 20 shown in FIG. 5 has a phase shift film 15 having a three-layer structure in which a first layer 12, a second layer 13, and a third layer 14 are laminated, and the transmittance is adjusted on the phase shift film 15. It differs from the mask blank 10 shown in FIG. 1 in that the film 16 is provided.
  • the points common to the mask blank 10 of the first embodiment will be omitted as appropriate.
  • the refractive indexes n 1 , n 2 , and n 3 of the first layer 12, the second layer 13, and the third layer 14 at the wavelengths of the ArF exposed light are n 1 > n 2 >, respectively.
  • the relationship of n 3 is satisfied, and the extinction coefficients k 1 , k 2 , and k 3 of the first layer 12, the second layer 13, and the third layer 14 satisfy the relationship of k 1 > k 2 > k 3. It is configured in.
  • the film thicknesses d 1 , d 2 , and d 3 of the first layer 12, the second layer 13, and the third layer 14 are configured to satisfy the relationship of d 1 > d 2 > d 3.
  • the phase shift film 15 is composed of a first layer 12, a second layer 13, and a third layer 14 that satisfy such a relationship, and thus has a higher transmittance than the phase shift film 2 in the first embodiment. It can be a phase shift film.
  • the configuration of the phase shift film 15 includes the conditions of the phase shift film set at the time of the simulation of the optical simulations B1, B2, and B3.
  • the same material as that of the phase shift film 2 of the first embodiment can be applied. Further, in the overall composition of the phase shift film 15, the total content of nitrogen and oxygen is preferably 40 atomic% or more, and more preferably 50 atomic% or more.
  • the first layer 12 is preferably formed of a material containing silicon and nitrogen
  • the second layer 13 is preferably formed of a material containing silicon, oxygen, and nitrogen, which is the uppermost layer.
  • the three layers 14 are preferably formed of a material containing silicon and oxygen.
  • the transmittance adjusting film 16 is laminated on the phase shift film 15, which is different from the transmittance adjusting film 4 in the first embodiment.
  • Other conditions to be satisfied are the same as those of the transmittance adjusting membrane 4 in the first embodiment.
  • the mask blank 20 in the present embodiment has the transmittance adjusting film 16 on the phase shift film 15.
  • the transmittance adjusting film 16 has the following equation (1) and the following equation (1) when the refractive index at the wavelength of the exposure light is n U , the extinction coefficient at the wavelength of the exposure light is k U , and the thickness is d U [nm]. Both satisfy the relationship of equation (2). Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • the transmittance adjusting film 16 satisfying the formula (1), the exposure light transmitted through the phase shift film 15 is exposed to the exposure light transmitted through the laminated structure of the phase shift film 15 and the transmittance adjusting film 16. It is possible to satisfy the condition that the amount of increase in the phase difference with respect to light is 20 degrees or less. If the transmittance adjusting film 16 satisfies the equation (2), the exposure is transmitted through the laminated structure of the phase shift film 15 and the transmittance adjusting film 16 with respect to the transmittance of the exposure light transmitted through the phase shift film 15. The condition that the ratio of the light transmittance is 0.50 or less can be satisfied.
  • phase shift mask 200 (see FIG. 6) according to the second embodiment, a phase shift film (phase shift pattern) 15a having the first pattern is provided on the translucent substrate 1, and the phase shift pattern 15a is provided.
  • a transmittance adjusting film (transmittance adjusting pattern) 16b having a second pattern is provided on the top.
  • the phase shift pattern 15a includes a third layer 14a having a first pattern, which is the uppermost layer containing silicon and oxygen, on the surface side opposite to the translucent substrate 1 side.
  • a light-shielding film (light-shielding pattern) 5c having a third pattern is provided on the transmittance adjusting pattern 16b.
  • the phase shift mask 200 includes a phase shift pattern 15a on the translucent substrate 1, and a transmission rate adjusting pattern 16b and a light shielding pattern 5c are placed on the phase shift pattern 15a.
  • the phase shift pattern 15a is 150 degrees with respect to the exposure light of the ArF excima laser that has passed through the phase shift pattern 15a and the exposure light that has passed through the air by the same distance as the thickness of the phase shift pattern 15a.
  • a phase difference of 210 degrees or less is generated, and the refractive index of the transmission light adjustment pattern 16b at the wavelength of the exposure light is n U , the extinction coefficient at the wavelength of the exposure light is k U , and the thickness is d U [nm].
  • Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • the specific configurations of the translucent substrate 1, the phase shift pattern 15a, the transmittance adjusting pattern 16b, and the light shielding pattern 5c in the phase shift mask 200 are the same as in the case of the mask blank 20.
  • FIGS. 7 and 8 are schematic cross-sectional views of the main part.
  • a first pattern to be formed on the phase shift film 15 is drawn with an electron beam on the resist film 7 formed by the spin coating method in the mask blank 20 shown in FIG. 5, and further, a predetermined process such as a development process is performed. (See FIG. 7A) to form a resist film (resist pattern) 7a having the first pattern.
  • the first pattern includes a phase shift pattern formed on the phase shift film 15 to exert a phase shift effect, and a pattern for alignment marks (opening on the left side in FIG. 6).
  • phase shift film 15a is composed of a first layer 12a'having a first pattern, a second layer 13a having a first pattern, and a third layer 14a having a first pattern. ..
  • the hard mask pattern 6a is removed.
  • the phase shift film 15a is formed when the transmittance adjustment pattern 16b is formed in the step of forming the transmittance adjustment pattern 16b on the transmittance adjustment film 16 described later by dry etching. It is preferable to adjust the thickness of the remaining portion of the phase shift film 15a'(first layer 12a') so that the remaining portion of the'(first layer 12a') is also removed almost at the same time.
  • a resist film is formed by a spin coating method. After that, a pattern to be formed on the transmittance adjusting film 16 is drawn on the resist film with an electron beam, and further a predetermined process such as a development process is performed to obtain a resist film (resist pattern) having a second pattern. 8b is formed (see FIG. 8A). After that, using the resist pattern 8b as a mask, dry etching using a mixed gas of chlorine-based gas and oxygen gas is performed on the light-shielding film 5a to form a light-shielding film (light-shielding pattern 5b) having a second pattern (FIG. 8 (a)).
  • the resist pattern 8b is removed and a cleaning treatment is performed, and dry etching using a fluorine-based gas is performed on the transmittance adjusting film 16 using the light-shielding pattern 5b as a mask to perform a transmittance adjusting film having a second pattern.
  • Transmittance adjustment pattern 16b is formed (see FIG. 8B).
  • the exposed remaining portion of the phase shift film (phase shift pattern) 15a'partially having the first pattern is also removed to form the phase shift film (phase shift pattern) 15a having the first pattern. (See FIG. 8 (b)).
  • a resist film is formed by a spin coating method. After that, a pattern to be formed on the light-shielding film 5 is drawn on the resist film with an electron beam, and further a predetermined process such as a development process is performed to obtain a resist film (resist pattern) 9c having a third pattern. Form (see FIG. 8 (c)). After that, using the resist pattern 9c as a mask, dry etching using a mixed gas of chlorine-based gas and oxygen gas is performed on the light-shielding pattern 5b to form a light-shielding film (light-shielding pattern) 5c having a third pattern (FIG. 8 (c)). Then, after removing the resist pattern 9c, a cleaning step is performed. In this way, the phase shift mask 200 shown in FIG. 6 can be manufactured.
  • a phase shift mask 200 manufactured by using the phase shift mask 200 according to the second embodiment or the mask blank 20 according to the first embodiment is used on a semiconductor substrate.
  • the feature is that the transfer pattern is exposed and transferred to the resist film. Therefore, when the phase shift mask 200 of the second embodiment is exposed and transferred to the resist film on the semiconductor device, a pattern can be formed on the resist film on the semiconductor device with an accuracy sufficiently satisfying the design specifications.
  • FIG. 13 is a cross-sectional view showing the configuration of the mask blank 30 according to the third embodiment of the present invention.
  • the mask blank 30 shown in FIG. 13 has a point where the transmittance adjusting film 41 is directly provided on the phase shift film 2 and a point where the etching stopper film 31 is arranged between the transmittance adjusting film 41 and the light shielding film 5. It is different from the mask blank 10 shown in FIG. Hereinafter, the points common to the mask blank 10 of the first embodiment will be omitted as appropriate.
  • the transmittance adjusting film 41 in this embodiment is made of a material containing chromium. Since the transmittance adjusting film 41 has sufficient etching selectivity with the phase shift film 2, the film corresponding to the intermediate film 3 in the first embodiment is not provided.
  • the transmittance adjusting film 41 is preferably formed of a material containing one or more elements selected from oxygen, nitrogen, carbon, boron and fluorine in chromium. Further, as the transmittance adjusting film 41, the chromium-based material used for the light-shielding film 5 can be used.
  • the refractive index n U at the wavelength of the exposure light of the transmittance adjusting film 41, the extinction coefficient k U at the wavelength of the exposure light, and the thickness d U [nm] are the relationships between the above equations (1) and (2). Designed to meet both.
  • the etching stopper film 31 in the present embodiment functions as an etching stopper when the light-shielding film 5 is formed of the above-mentioned chromium-containing material and the light-shielding film 5 is patterned by dry etching.
  • a material containing silicon can be used for the etching stopper film 31.
  • the etching stopper film 31 is preferably formed of a material containing silicon and oxygen.
  • the etching stopper film 31 can also be formed of a material containing tantalum and oxygen.
  • the thickness of the etching stopper film 31 is preferably 1 nm or more, and more preferably 2 nm or more.
  • the thickness of the etching stopper film 31 is preferably 10 nm or less, and more preferably 5 nm or less. In the present embodiment, when the light-shielding film 5 is formed of a material containing silicon or a material containing tantalum, the etching stopper film 31 may not be provided.
  • the mask blank 30 in the present embodiment has the transmittance adjusting film 41 on the phase shift film 2.
  • the transmittance adjusting film 41 has the following equation (1) and the following equation (1) when the refractive index at the wavelength of the exposure light is n U , the extinction coefficient at the wavelength of the exposure light is k U , and the thickness is d U [nm]. Both satisfy the relationship of equation (2). Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • the transmittance adjusting film 41 satisfying the formula (1), the exposure light transmitted through the phase shift film 2 is exposed to the exposure light transmitted through the laminated structure of the phase shift film 2 and the transmittance adjusting film 41. It is possible to satisfy the condition that the amount of increase in the phase difference with respect to light is 20 degrees or less. If the transmittance adjusting film 41 satisfies the equation (2), the exposure is transmitted through the laminated structure of the phase shift film 2 and the transmittance adjusting film 41 with respect to the transmittance of the exposure light transmitted through the phase shift film 2. The condition that the ratio of the light transmittance is 0.50 or less can be satisfied.
  • phase shift mask 300 (see FIG. 14) according to the third embodiment, a phase shift film (phase shift pattern) 2a having the first pattern is provided on the translucent substrate 1, and the phase shift pattern 2a is provided.
  • a transmittance adjusting film (transmittance adjusting pattern) 41b having a second pattern is provided on the top.
  • an etching stopper film (etching stopper pattern) 31b having a second pattern is provided on the transmittance adjusting pattern 41b.
  • a light-shielding film (light-shielding pattern) 5c having a third pattern is provided on the etching stopper film 31b.
  • the phase shift mask 300 includes the phase shift pattern 2a on the translucent substrate 1, and the transmittance adjustment pattern 41b and the etching stopper pattern 31b are on the phase shift pattern 2a.
  • the phase shift pattern 2a includes the light shielding pattern 5c, and the phase shift pattern 2a is the exposure light that has passed through the air for the same distance as the thickness of the phase shift pattern 2a with respect to the exposure light of the ArF excima laser that has passed through the phase shift pattern 2a.
  • Equation (1) d U ⁇ -17.63 x n U 3 + 142.0 x n U 2 364.9 x n U + 315.8 Equation (2) d U ⁇ -2.805 ⁇ k U 3 + 19.48 ⁇ k U 2 -43.58 ⁇ k U + 38.11.
  • the specific configurations of the translucent substrate 1, the phase shift pattern 2a, the transmittance adjustment pattern 41b, the etching stopper pattern 31b, and the light shielding pattern 5c in the phase shift mask 300 are the same as in the case of the mask blank 30. be.
  • FIGS. 15 and 16 are schematic cross-sectional views of the main part.
  • a first pattern to be formed on the phase shift film 2 is drawn with an electron beam on the resist film 7 formed by the spin coating method in the mask blank 30 shown in FIG. 13, and further, a predetermined process such as a development process is performed. (See FIG. 15A) to form a resist film (resist pattern) 7a having the first pattern.
  • This first pattern includes a phase shift pattern formed on the phase shift film 2 to exert a phase shift effect.
  • the first resist pattern 7a as a mask, dry etching using a mixed gas of chlorine-based gas and oxygen gas is performed on the light-shielding film 5, and the light-shielding film (light-shielding pattern) 5a having the first pattern is formed. Form (see FIG. 15 (b)).
  • the etching stopper film 31a having the first pattern is performed.
  • the first resist pattern 7a is removed and a cleaning process is performed.
  • a resist film is formed by a spin coating method. After that, a pattern to be formed on the etching stopper film 31 and the transmittance adjusting film 41 is drawn on the resist film with an electron beam, and further a predetermined process such as a development process is performed to obtain a resist having a second pattern.
  • a film (resist pattern) 8b is formed (see FIG. 15D).
  • phase shift film 2 having the first pattern (FIG. 16 (b)
  • dry etching using the light-shielding pattern 5b as a mask is also performed on the etching stopper pattern 31a, and an etching stopper film (etching stopper pattern) 31b having a second pattern is formed.
  • the second resist pattern 8b is removed and a cleaning process is performed.
  • a resist film is formed by a spin coating method.
  • a pattern to be formed on the light-shielding film 5 is drawn on the resist film with an electron beam, and further a predetermined process such as a development process is performed to obtain a resist film (resist pattern) 9c having a third pattern. Form (see FIG. 16 (c)).
  • a phase shift mask 300 manufactured by using the phase shift mask 300 according to the third embodiment or the mask blank 30 according to the third embodiment is used on a semiconductor substrate.
  • the feature is that the transfer pattern is exposed and transferred to the resist film. Therefore, when the phase shift mask 300 of the third embodiment is exposed and transferred to the resist film on the semiconductor device, a pattern can be formed on the resist film on the semiconductor device with an accuracy sufficiently satisfying the design specifications.
  • Example 1 Manufacturing of mask blank
  • a translucent substrate 1 made of synthetic quartz glass having a main surface dimension of about 152 mm ⁇ about 152 mm and a thickness of about 6.35 mm was prepared.
  • the translucent substrate 1 has an end face and a main surface polished to a predetermined surface roughness, and then subjected to a predetermined cleaning treatment and a predetermined drying treatment.
  • the refractive index n at the wavelength of the ArF exposed light was 1.556, and the extinction coefficient k was 0.00.
  • the translucent substrate 1 is installed in the film forming sputtering apparatus, and the silicon (Si) target is used, and the mixed gas of argon (Ar) gas and nitrogen (N 2 ) is used as the sputtering gas by reactive sputtering.
  • a silicon (Si) target is used, and an intermediate film 3 (combined with silicon and oxygen) composed of silicon and oxygen is placed on the phase shift film 2 by reactive sputtering using a mixed gas of argon (Ar) and oxygen (O 2) as the sputtering gas.
  • SiO 2 film was formed with a thickness of 3.0 nm.
  • the transmittance adjusting film 4 made of silicon and nitrogen was formed to a thickness of 12.0 nm by reactive sputtering using a mixed gas of argon (Ar) and nitrogen (N 2) as a sputtering gas.
  • phase shift amount measuring device MPM193 manufactured by Lasertech
  • a phase shift film was similarly formed on another translucent substrate, and the transmittance and phase difference for light having a wavelength of 193 nm were measured.
  • the phase difference was 18.6% and the phase difference was 180.0 degrees (deg).
  • the transmittance was 6.1% and the phase difference.
  • the interlayer film 3 has a thin film thickness of 3 nm and has a high transmittance similar to that of the translucent substrate, the influence on the transmittance and the phase difference due to the presence or absence of the interlayer film 3 can be ignored. be.
  • the phase shift film 2 had a refractive index n of 2.61 and an extinction coefficient k of 0.36, and was intermediate.
  • the film 3 had a refractive index n of 1.56 and an extinction coefficient k of 0.00
  • the transmittance adjusting film 4 had a refractive index n U of 1.52 and an extinction coefficient k U of 2.09.
  • the relationship between the thickness d U [nm] of the transmittance adjusting film 4, the refractive index n U, and the extinction coefficient k U is any of the equations (1), (2), and (3). It also meets.
  • a translucent substrate 1 on which the phase shift film 2, the intermediate film 3, and the transmittance adjusting film 4 are formed is installed in the film forming sputtering apparatus, and an argon (Ar) and dioxide are used using a chromium (Cr) target.
  • a light-shielding film 5 made of CrOC was formed on the permeability adjusting film 4 with a thickness of 44 nm by reactive sputtering using a mixed gas of carbon (CO 2) and helium (He) as a sputtering gas.
  • the optical density (OD) of the laminated structure of the phase shift film 2, the intermediate film 3, the transmittance adjusting film 4, and the light shielding film 5 with respect to light having a wavelength of 193 nm was measured and found to be 3.0 or more.
  • a silicon (Si) target is used for the translucent substrate 1 on which the light-shielding film 5 is formed, and a mixed gas of argon (Ar), oxygen (O 2 ), and nitrogen (N 2 ) is used as a sputtering gas.
  • a hard mask film 6 composed of silicon, nitrogen and oxygen was formed on the light-shielding film 5 by reactive sputtering to a thickness of 12 nm.
  • the surface of the hard mask film 6 was subjected to HMDS treatment.
  • a resist film 7 made of a chemically amplified resist for electron beam writing was formed with a film thickness of 80 nm in contact with the surface of the hard mask film 6 by a spin coating method.
  • a mask blank 10 having a structure in which a phase shift film 2, an intermediate film 3, a transmittance adjusting film 4, a light shielding film 5, a hard mask film 6 and a resist film 7 are laminated on a translucent substrate 1 is provided. Manufactured.
  • phase shift mask 100 of Example 1 was produced according to the procedure of the method for manufacturing a phase shift mask described in the first embodiment.
  • the prepared halftone type phase shift mask 100 of Example 1 is set on the mask stage of an exposure apparatus using an ArF excimer laser as exposure light, and ArF exposure light is irradiated from the translucent substrate 1 side of the phase shift mask 100.
  • the pattern was exposed and transferred to the resist film on the semiconductor device.
  • This transfer pattern included a relatively fine pattern and a relatively sparse pattern.
  • a resist film after exposure transfer was subjected to a predetermined treatment to form a resist pattern, and the resist pattern was observed with an SEM (Scanning Electron Microscope). As a result, it was found that a desired transfer pattern was formed for each pattern. From this result, it can be said that the circuit pattern can be formed with high accuracy on the semiconductor device by using this resist pattern as a mask.
  • the mask blank 20 of the second embodiment has a phase shift film 15 having a three-layer structure in which a first layer 12, a second layer 13, and a third layer 14 are laminated, and has a transmittance on the phase shift film 15. It was manufactured in the same manner as the mask blank 10 of Example 1 except for the configuration including the adjusting film 16.
  • the first layer 12a of the phase shift film 15 is composed of silicon and nitrogen, and has a refractive index n of 2.61 and an extinction coefficient k of light having a wavelength of 193 nm.
  • the transmittance adjusting film 16 is made of silicon and nitrogen and has a refractive index n U of 1.52 and an extinction coefficient k U of 2.09 in light having a wavelength of 193 nm, and has a film thickness of 11.7 nm. It was formed in d U. Therefore, the materials and manufacturing methods of the light-shielding film 5, the hard mask film 6, and the resist film 7 are the same as those in the first embodiment.
  • the values of the film thickness d U [nm], the refractive index n U, and the extinction coefficient k U of these transmittance adjusting films 16 are also related to any of the equations (1), (2), and (3). It also meets.
  • phase shift amount measuring device MPM193 manufactured by Lasertech
  • a phase shift film was similarly formed on another translucent substrate, and the transmittance and phase difference for light having a wavelength of 193 nm were measured.
  • the phase difference was 28.0% and the phase difference was 180.0 degrees (deg).
  • the transmittance was 6.0% and the phase difference.
  • the transmittance was 17.0% and the phase difference.
  • phase shift mask 200 of Example 2 was produced according to the procedure of the method for manufacturing a phase shift mask described in the second embodiment.
  • the prepared halftone type phase shift mask 200 of Example 2 is set on the mask stage of an exposure apparatus using an ArF excimer laser as exposure light, and ArF exposure light is irradiated from the translucent substrate 1 side of the phase shift mask 200.
  • the pattern was exposed and transferred to the resist film on the semiconductor device.
  • This transfer pattern included a relatively fine pattern and a relatively sparse pattern.
  • a resist film after exposure transfer was subjected to a predetermined treatment to form a resist pattern, and the resist pattern was observed with an SEM (Scanning Electron Microscope). As a result, it was found that a desired transfer pattern was formed for each pattern. From this result, it can be said that the circuit pattern can be formed with high accuracy on the semiconductor device by using this resist pattern as a mask.
  • Example 3 [Manufacturing of mask blank] A translucent substrate 1 made of synthetic quartz glass having a main surface dimension of about 152 mm ⁇ about 152 mm and a thickness of about 6.35 mm was prepared. The translucent substrate 1 has an end face and a main surface polished to a predetermined surface roughness, and then subjected to a predetermined cleaning treatment and a predetermined drying treatment. When the optical characteristics of the translucent substrate 1 were measured, the refractive index n at the wavelength of the ArF exposed light was 1.556, and the extinction coefficient k was 0.00.
  • the translucent substrate 1 is installed in the film forming sputtering apparatus, and the silicon (Si) target is used, and the mixed gas of argon (Ar) gas and nitrogen (N 2 ) is used as the sputtering gas by reactive sputtering.
  • the phase shift film 2 is composed of CrOC by reactive sputtering using a mixed gas of argon (Ar), carbon dioxide (CO 2) and helium (He) as the sputtering gas.
  • the permeability adjusting film 41 was formed with a thickness of 11 nm. Subsequently, using a silicon (Si) target, an etching stopper film composed of silicon and oxygen is applied onto the permeability adjusting film 41 by reactive sputtering using a mixed gas of argon (Ar) and oxygen (O 2) as the sputtering gas. 31 (SiO 2 film) was formed with a thickness of 3.0 nm.
  • phase shift amount measuring device MPM193 manufactured by Lasertech
  • a phase shift film was similarly formed on another translucent substrate, and the transmittance and phase difference for light having a wavelength of 193 nm were measured.
  • the phase difference was 18.6% and the phase difference was 180.0 degrees (deg).
  • the transmittance was 6.0% and the phase difference was high. It was 191.0 degrees (deg).
  • the etching stopper film 31 has a thin film thickness of 3 nm and has a high transmittance similar to that of the translucent substrate, the influence on the transmittance and the phase difference due to the presence or absence of the etching stopper film 31 can be ignored. It is a thing.
  • the phase shift film 2 had a refractive index n of 2.61 and an extinction coefficient k of 0.36.
  • the transmittance adjusting film 41 has a refractive index n U of 1.82 and an extinction coefficient k U of 1.83
  • the etching stopper film 31 has a refractive index n of 1.56 and an extinction coefficient k of 0.00. rice field.
  • the thickness d U [nm] of the transmittance adjusting film 41, the refractive index n U, and the extinction coefficient k U are related to any of the equations (1), (2), and (3). It meets.
  • a light-shielding film 5 having a three-layer structure was formed on the etching stopper film 31 with a thickness of 78 nm.
  • a translucent substrate 1 on which a phase shift film 2, a transmission rate adjusting film 41, and an etching stopper film 31 are formed is installed in a film forming sputtering apparatus, and an argon (Ar) is used by using a chromium (Cr) target.
  • Nitrogen (N 2 ), carbon dioxide (CO 2 ) and helium (He) were mixed gas as a sputtering gas to form a first layer made of CrOCN with a thickness of 31 nm.
  • the first consisting of CrOCN is subjected to reactive sputtering using a mixed gas of argon (Ar), nitrogen (N 2 ), carbon dioxide (CO 2) and helium (He) as the sputtering gas.
  • a mixed gas of argon (Ar), nitrogen (N 2 ), carbon dioxide (CO 2) and helium (He) as the sputtering gas.
  • Two layers were formed with a thickness of 41 nm.
  • a third layer made of CrN is formed to a thickness of 6 nm by reactive sputtering using a mixed gas of argon (Ar), nitrogen (N 2) and helium (He) as a sputtering gas using a chromium (Cr) target. Formed.
  • the optical density (OD) of the laminated structure of the phase shift film 2, the transmittance adjusting film 41, the etching stopper film 31, and the light shielding film 5 with respect to light having a wavelength of 193 nm was measured and found to be 3.2 or more.
  • a resist film 7 made of a chemically amplified resist for electron beam writing was formed with a film thickness of 80 nm in contact with the surface of the light-shielding film 5.
  • a mask blank 30 having a structure in which a phase shift film 2, a transmittance adjusting film 41, an etching stopper film 31, a light shielding film 5, and a resist film 7 are laminated on a translucent substrate 1 is manufactured.
  • phase shift mask 300 of Example 3 was produced according to the procedure of the method for manufacturing a phase shift mask described in the third embodiment.
  • the manufactured halftone type phase shift mask 300 of Example 3 is set on the mask stage of an exposure apparatus using an ArF excimer laser as exposure light, and ArF exposure light is irradiated from the translucent substrate 1 side of the phase shift mask 300.
  • the pattern was exposed and transferred to the resist film on the semiconductor device.
  • This transfer pattern included a relatively fine pattern and a relatively sparse pattern.
  • a resist film after exposure transfer was subjected to a predetermined treatment to form a resist pattern, and the resist pattern was observed with an SEM (Scanning Electron Microscope). As a result, it was found that a desired transfer pattern was formed for each pattern. From this result, it can be said that the circuit pattern can be formed with high accuracy on the semiconductor device by using this resist pattern as a mask.
  • Translucent substrate 2 Phase shift film 2a Phase shift film having a first pattern (phase shift pattern) 2a'Phase shift film partially having the first pattern (phase shift pattern) 3 Intermediate film 3a Intermediate film having the first pattern (intermediate pattern) 3b Intermediate membrane with a second pattern (intermediate pattern) 4 Transmittance adjustment film 4a Transmittance adjustment film having the first pattern (transmittance adjustment pattern) 4b Transmittance adjustment membrane having a second pattern (transmittance adjustment pattern) 5 Light-shielding film 5a Light-shielding film having the first pattern (light-shielding pattern) 5b Light-shielding film with a second pattern (light-shielding pattern) 5c Light-shielding film with a third pattern (light-shielding pattern) 6 Hardmask film 6a Hardmask film having the first pattern (hardmask pattern) 7 Resist film 7a A resist film having a first pattern (resist pattern) 8b Resist film having a second pattern (resist pattern)

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/JP2021/022631 2020-06-30 2021-06-15 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 Ceased WO2022004350A1 (ja)

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KR1020227041217A KR20230029606A (ko) 2020-06-30 2021-06-15 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
US17/926,962 US20230194973A1 (en) 2020-06-30 2021-06-15 Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device
CN202180041203.3A CN115769144B (zh) 2020-06-30 2021-06-15 掩模坯料、相移掩模、相移掩模的制造方法及半导体器件的制造方法

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006215297A (ja) * 2005-02-04 2006-08-17 Shin Etsu Chem Co Ltd 半透明積層膜、フォトマスクブランク、フォトマスク、およびこれらの製造方法
JP2008310091A (ja) * 2007-06-15 2008-12-25 Shin Etsu Chem Co Ltd ハーフトーン型位相シフトマスク
JP2018109780A (ja) * 2018-03-02 2018-07-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2019207359A (ja) * 2018-05-30 2019-12-05 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2020042208A (ja) * 2018-09-12 2020-03-19 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06123961A (ja) 1992-10-12 1994-05-06 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法
JP2003255513A (ja) * 2002-03-05 2003-09-10 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクおよびブランク並びにパターン転写方法
JP2004085760A (ja) * 2002-08-26 2004-03-18 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びそれを用いたハーフトーン型位相シフトマスク、並びにパターン転写法
TWI480675B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法
JP2007279441A (ja) 2006-04-07 2007-10-25 Toshiba Corp ハーフトーン型位相シフトマスク及びその製造方法
JP6430155B2 (ja) * 2014-06-19 2018-11-28 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6502143B2 (ja) * 2015-03-27 2019-04-17 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10481485B2 (en) * 2015-05-15 2019-11-19 Hoya Corporation Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
WO2018181891A1 (ja) * 2017-03-31 2018-10-04 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法
JP7109996B2 (ja) * 2018-05-30 2022-08-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006215297A (ja) * 2005-02-04 2006-08-17 Shin Etsu Chem Co Ltd 半透明積層膜、フォトマスクブランク、フォトマスク、およびこれらの製造方法
JP2008310091A (ja) * 2007-06-15 2008-12-25 Shin Etsu Chem Co Ltd ハーフトーン型位相シフトマスク
JP2018109780A (ja) * 2018-03-02 2018-07-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2019207359A (ja) * 2018-05-30 2019-12-05 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2020042208A (ja) * 2018-09-12 2020-03-19 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法

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