CN115769144B - 掩模坯料、相移掩模、相移掩模的制造方法及半导体器件的制造方法 - Google Patents

掩模坯料、相移掩模、相移掩模的制造方法及半导体器件的制造方法

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Publication number
CN115769144B
CN115769144B CN202180041203.3A CN202180041203A CN115769144B CN 115769144 B CN115769144 B CN 115769144B CN 202180041203 A CN202180041203 A CN 202180041203A CN 115769144 B CN115769144 B CN 115769144B
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CN
China
Prior art keywords
film
phase shift
pattern
transmittance
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
CN202180041203.3A
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English (en)
Chinese (zh)
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CN115769144A (zh
Inventor
野泽顺
穐山圭司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN115769144A publication Critical patent/CN115769144A/zh
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Publication of CN115769144B publication Critical patent/CN115769144B/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202180041203.3A 2020-06-30 2021-06-15 掩模坯料、相移掩模、相移掩模的制造方法及半导体器件的制造方法 Active CN115769144B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-112702 2020-06-30
JP2020112702 2020-06-30
PCT/JP2021/022631 WO2022004350A1 (ja) 2020-06-30 2021-06-15 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN115769144A CN115769144A (zh) 2023-03-07
CN115769144B true CN115769144B (zh) 2025-08-05

Family

ID=79315296

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180041203.3A Active CN115769144B (zh) 2020-06-30 2021-06-15 掩模坯料、相移掩模、相移掩模的制造方法及半导体器件的制造方法

Country Status (6)

Country Link
US (1) US20230194973A1 (https=)
JP (1) JP7618677B2 (https=)
KR (1) KR20230029606A (https=)
CN (1) CN115769144B (https=)
TW (1) TWI902828B (https=)
WO (1) WO2022004350A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016004223A (ja) * 2014-06-19 2016-01-12 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
TW202012164A (zh) * 2018-05-30 2020-04-01 日商Ｈｏｙａ股份有限公司 遮罩基底、相位轉移遮罩以及半導體元件之製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06123961A (ja) 1992-10-12 1994-05-06 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法
JP2003255513A (ja) * 2002-03-05 2003-09-10 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクおよびブランク並びにパターン転写方法
JP2004085760A (ja) * 2002-08-26 2004-03-18 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びそれを用いたハーフトーン型位相シフトマスク、並びにパターン転写法
TWI480675B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法
JP5165833B2 (ja) * 2005-02-04 2013-03-21 信越化学工業株式会社 フォトマスクブランク、フォトマスク、およびフォトマスクブランクの製造方法
JP2007279441A (ja) 2006-04-07 2007-10-25 Toshiba Corp ハーフトーン型位相シフトマスク及びその製造方法
JP2008310091A (ja) * 2007-06-15 2008-12-25 Shin Etsu Chem Co Ltd ハーフトーン型位相シフトマスク
JP6502143B2 (ja) * 2015-03-27 2019-04-17 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10481485B2 (en) * 2015-05-15 2019-11-19 Hoya Corporation Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
WO2018181891A1 (ja) * 2017-03-31 2018-10-04 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法
JP6505891B2 (ja) * 2018-03-02 2019-04-24 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP6938428B2 (ja) * 2018-05-30 2021-09-22 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP7179543B2 (ja) * 2018-09-12 2022-11-29 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016004223A (ja) * 2014-06-19 2016-01-12 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
TW202012164A (zh) * 2018-05-30 2020-04-01 日商Ｈｏｙａ股份有限公司 遮罩基底、相位轉移遮罩以及半導體元件之製造方法

Also Published As

Publication number Publication date
TWI902828B (zh) 2025-11-01
JPWO2022004350A1 (https=) 2022-01-06
JP7618677B2 (ja) 2025-01-21
US20230194973A1 (en) 2023-06-22
CN115769144A (zh) 2023-03-07
WO2022004350A1 (ja) 2022-01-06
KR20230029606A (ko) 2023-03-03
TW202217433A (zh) 2022-05-01

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