KR20210064066A - 기판 처리 방법 및 플라즈마 처리 장치 - Google Patents

기판 처리 방법 및 플라즈마 처리 장치 Download PDF

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Publication number
KR20210064066A
KR20210064066A KR1020200153776A KR20200153776A KR20210064066A KR 20210064066 A KR20210064066 A KR 20210064066A KR 1020200153776 A KR1020200153776 A KR 1020200153776A KR 20200153776 A KR20200153776 A KR 20200153776A KR 20210064066 A KR20210064066 A KR 20210064066A
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South Korea
Prior art keywords
gas
film
plasma
chamber
silicon
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KR1020200153776A
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English (en)
Korean (ko)
Inventor
류타로 스다
마주 도무라
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도쿄엘렉트론가부시키가이샤
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Publication of KR20210064066A publication Critical patent/KR20210064066A/ko
Ceased legal-status Critical Current

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    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H01L21/31144—
    • H01L21/32137—
    • H01L21/32139—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020200153776A 2019-11-25 2020-11-17 기판 처리 방법 및 플라즈마 처리 장치 Ceased KR20210064066A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2019-212425 2019-11-25
JP2019212425 2019-11-25
JP2020154668A JP7604145B2 (ja) 2019-11-25 2020-09-15 基板処理方法及びプラズマ処理装置
JPJP-P-2020-154668 2020-09-15

Publications (1)

Publication Number Publication Date
KR20210064066A true KR20210064066A (ko) 2021-06-02

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Family Applications (1)

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KR1020200153776A Ceased KR20210064066A (ko) 2019-11-25 2020-11-17 기판 처리 방법 및 플라즈마 처리 장치

Country Status (5)

Country Link
JP (3) JP7604145B2 (https=)
KR (1) KR20210064066A (https=)
CN (2) CN112838002B (https=)
SG (1) SG10202011423RA (https=)
TW (2) TWI878384B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025174172A1 (ko) * 2024-02-14 2025-08-21 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법

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* Cited by examiner, † Cited by third party
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TWI899193B (zh) * 2020-04-30 2025-10-01 日商東京威力科創股份有限公司 基板處理方法及電漿處理裝置
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法
JP7099675B1 (ja) 2021-07-27 2022-07-12 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置
KR20240033271A (ko) * 2021-07-27 2024-03-12 도쿄엘렉트론가부시키가이샤 에칭 방법, 반도체 장치의 제조 방법, 에칭 프로그램 및 플라즈마 처리 장치
KR102646804B1 (ko) * 2021-08-25 2024-03-12 주식회사 테스 실리콘 질화물층을 포함하는 기판을 처리하는 방법
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7674223B2 (ja) * 2021-11-01 2025-05-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20250056202A (ko) * 2022-08-22 2025-04-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 기판 처리 시스템
TW202548916A (zh) * 2023-12-14 2025-12-16 日商東京威力科創股份有限公司 被覆膜形成方法、電漿處理方法及電漿處理裝置

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KR100518606B1 (ko) * 2003-12-19 2005-10-04 삼성전자주식회사 실리콘 기판과 식각 선택비가 큰 마스크층을 이용한리세스 채널 어레이 트랜지스터의 제조 방법
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KR102741055B1 (ko) * 2018-02-15 2024-12-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP6952866B2 (ja) * 2018-03-02 2021-10-27 東京エレクトロン株式会社 ３次元半導体記憶装置の製造方法
JP7366918B2 (ja) * 2018-03-16 2023-10-23 ラム リサーチ コーポレーション 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質

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CN112838002B (zh) 2025-09-16
JP7604145B2 (ja) 2024-12-23
CN112838002A (zh) 2021-05-25
TW202533297A (zh) 2025-08-16
SG10202011423RA (en) 2021-06-29
JP7763312B2 (ja) 2025-10-31
TW202133261A (zh) 2021-09-01
JP2026004623A (ja) 2026-01-14
JP2021090039A (ja) 2021-06-10
TWI878384B (zh) 2025-04-01
JP2024177528A (ja) 2024-12-19
CN121034951A (zh) 2025-11-28

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