JP7604145B2 - 基板処理方法及びプラズマ処理装置 - Google Patents

基板処理方法及びプラズマ処理装置 Download PDF

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Publication number
JP7604145B2
JP7604145B2 JP2020154668A JP2020154668A JP7604145B2 JP 7604145 B2 JP7604145 B2 JP 7604145B2 JP 2020154668 A JP2020154668 A JP 2020154668A JP 2020154668 A JP2020154668 A JP 2020154668A JP 7604145 B2 JP7604145 B2 JP 7604145B2
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gas
film
silicon
mask
substrate
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Japanese (ja)
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JP2021090039A5 (https=
JP2021090039A (ja
Inventor
隆太郎 須田
幕樹 戸村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2020154668A priority Critical patent/JP7604145B2/ja
Priority to US17/092,376 priority patent/US11342194B2/en
Priority to US17/092,380 priority patent/US11361976B2/en
Priority to SG10202011423RA priority patent/SG10202011423RA/en
Priority to KR1020200153776A priority patent/KR20210064066A/ko
Priority to CN202011285147.1A priority patent/CN112838002B/zh
Priority to TW114107272A priority patent/TW202533297A/zh
Priority to TW109140159A priority patent/TWI878384B/zh
Priority to CN202511189923.0A priority patent/CN121034951A/zh
Priority to US17/244,957 priority patent/US20210343539A1/en
Publication of JP2021090039A publication Critical patent/JP2021090039A/ja
Priority to US17/720,292 priority patent/US20220246443A1/en
Priority to US17/752,877 priority patent/US20220285169A1/en
Publication of JP2021090039A5 publication Critical patent/JP2021090039A5/ja
Priority to JP2024176957A priority patent/JP7763312B2/ja
Application granted granted Critical
Publication of JP7604145B2 publication Critical patent/JP7604145B2/ja
Priority to JP2025176915A priority patent/JP2026004623A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2020154668A 2019-11-25 2020-09-15 基板処理方法及びプラズマ処理装置 Active JP7604145B2 (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP2020154668A JP7604145B2 (ja) 2019-11-25 2020-09-15 基板処理方法及びプラズマ処理装置
US17/092,380 US11361976B2 (en) 2019-11-25 2020-11-09 Substrate processing method and plasma processing apparatus
US17/092,376 US11342194B2 (en) 2019-11-25 2020-11-09 Substrate processing method and substrate processing apparatus
KR1020200153776A KR20210064066A (ko) 2019-11-25 2020-11-17 기판 처리 방법 및 플라즈마 처리 장치
CN202011285147.1A CN112838002B (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置
TW114107272A TW202533297A (zh) 2019-11-25 2020-11-17 基板處理方法及電漿處理裝置
TW109140159A TWI878384B (zh) 2019-11-25 2020-11-17 基板處理方法及電漿處理裝置
CN202511189923.0A CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置
SG10202011423RA SG10202011423RA (en) 2019-11-25 2020-11-17 Substrate processing method and plasma processing apparatus
US17/244,957 US20210343539A1 (en) 2020-04-30 2021-04-30 Substrate processing method and plasma processing apparatus
US17/720,292 US20220246443A1 (en) 2019-11-25 2022-04-14 Substrate processing method and substrate processing apparatus
US17/752,877 US20220285169A1 (en) 2019-11-25 2022-05-25 Substrate processing method and plasma processing apparatus
JP2024176957A JP7763312B2 (ja) 2019-11-25 2024-10-09 基板処理方法及びプラズマ処理装置
JP2025176915A JP2026004623A (ja) 2019-11-25 2025-10-21 プラズマ処理装置及びエッチング方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019212425 2019-11-25
JP2019212425 2019-11-25
JP2020154668A JP7604145B2 (ja) 2019-11-25 2020-09-15 基板処理方法及びプラズマ処理装置

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JP2021090039A JP2021090039A (ja) 2021-06-10
JP2021090039A5 JP2021090039A5 (https=) 2023-07-20
JP7604145B2 true JP7604145B2 (ja) 2024-12-23

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JP2024176957A Active JP7763312B2 (ja) 2019-11-25 2024-10-09 基板処理方法及びプラズマ処理装置
JP2025176915A Pending JP2026004623A (ja) 2019-11-25 2025-10-21 プラズマ処理装置及びエッチング方法

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JP2025176915A Pending JP2026004623A (ja) 2019-11-25 2025-10-21 プラズマ処理装置及びエッチング方法

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JP (3) JP7604145B2 (https=)
KR (1) KR20210064066A (https=)
CN (2) CN112838002B (https=)
SG (1) SG10202011423RA (https=)
TW (2) TWI878384B (https=)

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TWI899193B (zh) * 2020-04-30 2025-10-01 日商東京威力科創股份有限公司 基板處理方法及電漿處理裝置
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法
JP7099675B1 (ja) 2021-07-27 2022-07-12 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置
KR20240033271A (ko) * 2021-07-27 2024-03-12 도쿄엘렉트론가부시키가이샤 에칭 방법, 반도체 장치의 제조 방법, 에칭 프로그램 및 플라즈마 처리 장치
KR102646804B1 (ko) * 2021-08-25 2024-03-12 주식회사 테스 실리콘 질화물층을 포함하는 기판을 처리하는 방법
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7674223B2 (ja) * 2021-11-01 2025-05-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20250056202A (ko) * 2022-08-22 2025-04-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 기판 처리 시스템
TW202548916A (zh) * 2023-12-14 2025-12-16 日商東京威力科創股份有限公司 被覆膜形成方法、電漿處理方法及電漿處理裝置
KR20250124941A (ko) * 2024-02-14 2025-08-21 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법

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JP2016225567A (ja) 2015-06-03 2016-12-28 東京エレクトロン株式会社 クリーニング方法
JP2018032664A (ja) 2016-08-22 2018-03-01 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法
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Publication number Publication date
CN112838002B (zh) 2025-09-16
CN112838002A (zh) 2021-05-25
TW202533297A (zh) 2025-08-16
SG10202011423RA (en) 2021-06-29
JP7763312B2 (ja) 2025-10-31
TW202133261A (zh) 2021-09-01
JP2026004623A (ja) 2026-01-14
JP2021090039A (ja) 2021-06-10
TWI878384B (zh) 2025-04-01
KR20210064066A (ko) 2021-06-02
JP2024177528A (ja) 2024-12-19
CN121034951A (zh) 2025-11-28

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