CN112838002B - 基板处理方法及等离子体处理装置 - Google Patents

基板处理方法及等离子体处理装置

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Publication number
CN112838002B
CN112838002B CN202011285147.1A CN202011285147A CN112838002B CN 112838002 B CN112838002 B CN 112838002B CN 202011285147 A CN202011285147 A CN 202011285147A CN 112838002 B CN112838002 B CN 112838002B
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CN
China
Prior art keywords
gas
film
processing method
substrate processing
silicon
Prior art date
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Active
Application number
CN202011285147.1A
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English (en)
Chinese (zh)
Other versions
CN112838002A (zh
Inventor
须田隆太郎
户村幕树
田中康基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to CN202511189923.0A priority Critical patent/CN121034951A/zh
Publication of CN112838002A publication Critical patent/CN112838002A/zh
Application granted granted Critical
Publication of CN112838002B publication Critical patent/CN112838002B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202011285147.1A 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置 Active CN112838002B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202511189923.0A CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019212425 2019-11-25
JP2019-212425 2019-11-25
JP2020154668A JP7604145B2 (ja) 2019-11-25 2020-09-15 基板処理方法及びプラズマ処理装置
JP2020-154668 2020-09-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202511189923.0A Division CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置

Publications (2)

Publication Number Publication Date
CN112838002A CN112838002A (zh) 2021-05-25
CN112838002B true CN112838002B (zh) 2025-09-16

Family

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CN202011285147.1A Active CN112838002B (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置
CN202511189923.0A Pending CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置

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Country Status (5)

Country Link
JP (3) JP7604145B2 (https=)
KR (1) KR20210064066A (https=)
CN (2) CN112838002B (https=)
SG (1) SG10202011423RA (https=)
TW (2) TWI878384B (https=)

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TWI899193B (zh) * 2020-04-30 2025-10-01 日商東京威力科創股份有限公司 基板處理方法及電漿處理裝置
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法
JP7099675B1 (ja) 2021-07-27 2022-07-12 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置
KR20240033271A (ko) * 2021-07-27 2024-03-12 도쿄엘렉트론가부시키가이샤 에칭 방법, 반도체 장치의 제조 방법, 에칭 프로그램 및 플라즈마 처리 장치
KR102646804B1 (ko) * 2021-08-25 2024-03-12 주식회사 테스 실리콘 질화물층을 포함하는 기판을 처리하는 방법
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7674223B2 (ja) * 2021-11-01 2025-05-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20250056202A (ko) * 2022-08-22 2025-04-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 기판 처리 시스템
TW202548916A (zh) * 2023-12-14 2025-12-16 日商東京威力科創股份有限公司 被覆膜形成方法、電漿處理方法及電漿處理裝置
KR20250124941A (ko) * 2024-02-14 2025-08-21 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법

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JP2019009403A (ja) * 2017-06-21 2019-01-17 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP2019145780A (ja) * 2018-02-15 2019-08-29 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置

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KR100518606B1 (ko) * 2003-12-19 2005-10-04 삼성전자주식회사 실리콘 기판과 식각 선택비가 큰 마스크층을 이용한리세스 채널 어레이 트랜지스터의 제조 방법
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JP6180824B2 (ja) * 2013-07-02 2017-08-16 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US9824865B2 (en) * 2014-03-05 2017-11-21 Lam Research Corporation Waferless clean in dielectric etch process
JP6423643B2 (ja) 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
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Also Published As

Publication number Publication date
JP7604145B2 (ja) 2024-12-23
CN112838002A (zh) 2021-05-25
TW202533297A (zh) 2025-08-16
SG10202011423RA (en) 2021-06-29
JP7763312B2 (ja) 2025-10-31
TW202133261A (zh) 2021-09-01
JP2026004623A (ja) 2026-01-14
JP2021090039A (ja) 2021-06-10
TWI878384B (zh) 2025-04-01
KR20210064066A (ko) 2021-06-02
JP2024177528A (ja) 2024-12-19
CN121034951A (zh) 2025-11-28

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Inventor after: Kagita Ryutaro

Inventor after: Family village curtain tree

Inventor after: Tanaka Yasumoto

Inventor before: Kagita Ryutaro

Inventor before: Family village curtain tree

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