SG10202011423RA - Substrate processing method and plasma processing apparatus - Google Patents
Substrate processing method and plasma processing apparatusInfo
- Publication number
- SG10202011423RA SG10202011423RA SG10202011423RA SG10202011423RA SG10202011423RA SG 10202011423R A SG10202011423R A SG 10202011423RA SG 10202011423R A SG10202011423R A SG 10202011423RA SG 10202011423R A SG10202011423R A SG 10202011423RA SG 10202011423R A SG10202011423R A SG 10202011423RA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- processing method
- substrate processing
- plasma processing
- plasma
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019212425 | 2019-11-25 | ||
| JP2020154668A JP7604145B2 (ja) | 2019-11-25 | 2020-09-15 | 基板処理方法及びプラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202011423RA true SG10202011423RA (en) | 2021-06-29 |
Family
ID=75923065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202011423RA SG10202011423RA (en) | 2019-11-25 | 2020-11-17 | Substrate processing method and plasma processing apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (3) | JP7604145B2 (https=) |
| KR (1) | KR20210064066A (https=) |
| CN (2) | CN112838002B (https=) |
| SG (1) | SG10202011423RA (https=) |
| TW (2) | TWI878384B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI899193B (zh) * | 2020-04-30 | 2025-10-01 | 日商東京威力科創股份有限公司 | 基板處理方法及電漿處理裝置 |
| CN116034454A (zh) * | 2021-04-28 | 2023-04-28 | 东京毅力科创株式会社 | 蚀刻方法 |
| JP7099675B1 (ja) | 2021-07-27 | 2022-07-12 | 東京エレクトロン株式会社 | エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置 |
| KR20240033271A (ko) * | 2021-07-27 | 2024-03-12 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법, 반도체 장치의 제조 방법, 에칭 프로그램 및 플라즈마 처리 장치 |
| KR102646804B1 (ko) * | 2021-08-25 | 2024-03-12 | 주식회사 테스 | 실리콘 질화물층을 포함하는 기판을 처리하는 방법 |
| JP7667060B2 (ja) * | 2021-10-22 | 2025-04-22 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
| JP7674223B2 (ja) * | 2021-11-01 | 2025-05-09 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
| JP7348672B2 (ja) * | 2021-12-03 | 2023-09-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
| KR20250056202A (ko) * | 2022-08-22 | 2025-04-25 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 기판 처리 시스템 |
| TW202548916A (zh) * | 2023-12-14 | 2025-12-16 | 日商東京威力科創股份有限公司 | 被覆膜形成方法、電漿處理方法及電漿處理裝置 |
| KR20250124941A (ko) * | 2024-02-14 | 2025-08-21 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06168914A (ja) * | 1992-05-13 | 1994-06-14 | Tokyo Electron Ltd | エッチング処理方法 |
| JPH07147273A (ja) * | 1993-11-24 | 1995-06-06 | Tokyo Electron Ltd | エッチング処理方法 |
| KR100518606B1 (ko) * | 2003-12-19 | 2005-10-04 | 삼성전자주식회사 | 실리콘 기판과 식각 선택비가 큰 마스크층을 이용한리세스 채널 어레이 트랜지스터의 제조 방법 |
| US8058179B1 (en) * | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
| KR101200139B1 (ko) * | 2009-09-02 | 2012-11-13 | 세키스이가가쿠 고교가부시키가이샤 | 실리콘 함유막의 에칭 방법 |
| JP6180824B2 (ja) * | 2013-07-02 | 2017-08-16 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| US9824865B2 (en) * | 2014-03-05 | 2017-11-21 | Lam Research Corporation | Waferless clean in dielectric etch process |
| JP6423643B2 (ja) | 2014-08-08 | 2018-11-14 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| JP6393574B2 (ja) * | 2014-10-09 | 2018-09-19 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2016225567A (ja) * | 2015-06-03 | 2016-12-28 | 東京エレクトロン株式会社 | クリーニング方法 |
| US9922840B2 (en) * | 2015-07-07 | 2018-03-20 | Applied Materials, Inc. | Adjustable remote dissociation |
| WO2017123423A1 (en) * | 2016-01-13 | 2017-07-20 | Applied Materials, Inc. | Hydrogen plasma based cleaning process for etch hardware |
| JP6689159B2 (ja) * | 2016-08-22 | 2020-04-28 | 東京エレクトロン株式会社 | エッチング方法およびｄｒａｍキャパシタの製造方法 |
| US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| US20180286707A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Gas additives for sidewall passivation during high aspect ratio cryogenic etch |
| JP7109165B2 (ja) * | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6952542B2 (ja) * | 2017-06-21 | 2021-10-20 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| JP6948181B2 (ja) * | 2017-08-01 | 2021-10-13 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| US11075084B2 (en) * | 2017-08-31 | 2021-07-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chemistries for etching multi-stacked layers |
| JP7158252B2 (ja) * | 2018-02-15 | 2022-10-21 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| KR102741055B1 (ko) * | 2018-02-15 | 2024-12-10 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 |
| JP6952866B2 (ja) * | 2018-03-02 | 2021-10-27 | 東京エレクトロン株式会社 | ３次元半導体記憶装置の製造方法 |
| JP7366918B2 (ja) * | 2018-03-16 | 2023-10-23 | ラム リサーチ コーポレーション | 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 |
-
2020
- 2020-09-15 JP JP2020154668A patent/JP7604145B2/ja active Active
- 2020-11-17 SG SG10202011423RA patent/SG10202011423RA/en unknown
- 2020-11-17 KR KR1020200153776A patent/KR20210064066A/ko not_active Ceased
- 2020-11-17 CN CN202011285147.1A patent/CN112838002B/zh active Active
- 2020-11-17 TW TW109140159A patent/TWI878384B/zh active
- 2020-11-17 TW TW114107272A patent/TW202533297A/zh unknown
- 2020-11-17 CN CN202511189923.0A patent/CN121034951A/zh active Pending
-
2024
- 2024-10-09 JP JP2024176957A patent/JP7763312B2/ja active Active
-
2025
- 2025-10-21 JP JP2025176915A patent/JP2026004623A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN112838002B (zh) | 2025-09-16 |
| JP7604145B2 (ja) | 2024-12-23 |
| CN112838002A (zh) | 2021-05-25 |
| TW202533297A (zh) | 2025-08-16 |
| JP7763312B2 (ja) | 2025-10-31 |
| TW202133261A (zh) | 2021-09-01 |
| JP2026004623A (ja) | 2026-01-14 |
| JP2021090039A (ja) | 2021-06-10 |
| TWI878384B (zh) | 2025-04-01 |
| KR20210064066A (ko) | 2021-06-02 |
| JP2024177528A (ja) | 2024-12-19 |
| CN121034951A (zh) | 2025-11-28 |
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