SG10202004597PA - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing methodInfo
- Publication number
- SG10202004597PA SG10202004597PA SG10202004597PA SG10202004597PA SG10202004597PA SG 10202004597P A SG10202004597P A SG 10202004597PA SG 10202004597P A SG10202004597P A SG 10202004597PA SG 10202004597P A SG10202004597P A SG 10202004597PA SG 10202004597P A SG10202004597P A SG 10202004597PA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate processing
- processing apparatus
- processing method
- substrate
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32385—Treating the edge of the workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020200013296A KR102116474B1 (en) | 2020-02-04 | 2020-02-04 | Substrate processing apparatus and substrate processing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202004597PA true SG10202004597PA (en) | 2021-09-29 |
Family
ID=70920360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202004597PA SG10202004597PA (en) | 2020-02-04 | 2020-05-18 | Substrate processing apparatus and substrate processing method |
Country Status (6)
Country | Link |
---|---|
US (1) | US11776791B2 (en) |
JP (2) | JP2021125675A (en) |
KR (1) | KR102116474B1 (en) |
CN (1) | CN113223914B (en) |
SG (1) | SG10202004597PA (en) |
TW (1) | TWI735225B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102357066B1 (en) * | 2019-10-31 | 2022-02-03 | 세메스 주식회사 | Apparatus for treating substrate |
KR102116474B1 (en) * | 2020-02-04 | 2020-05-28 | 피에스케이 주식회사 | Substrate processing apparatus and substrate processing method |
KR102396431B1 (en) | 2020-08-14 | 2022-05-10 | 피에스케이 주식회사 | Substrate processing apparatus and substrate transfer method |
KR102275757B1 (en) * | 2020-08-24 | 2021-07-09 | 피에스케이 주식회사 | Apparatus for treating substrate |
US11581242B2 (en) * | 2021-01-14 | 2023-02-14 | Tokyo Electron Limited | Integrated high efficiency gate on gate cooling |
KR102589181B1 (en) * | 2021-08-31 | 2023-10-16 | 피에스케이 주식회사 | Substrate processing apparatus and substrate processing method |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004024893A1 (en) | 2003-05-27 | 2005-04-14 | Samsung Electronics Co., Ltd., Suwon | Apparatus and method for etching a wafer edge |
KR100585089B1 (en) * | 2003-05-27 | 2006-05-30 | 삼성전자주식회사 | Plasma processing apparatus for processing the edge of wafer, insulating plate for plasma processing, bottom electrode for plasma processing, method of plasma processing the edge of wafer and method of fabricating semiconductor device using the same |
JP4502198B2 (en) | 2004-10-21 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | Etching apparatus and etching method |
US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
KR100697043B1 (en) * | 2005-12-29 | 2007-03-20 | 세메스 주식회사 | Apparatus and method for etching an edge of a substrate |
US7896967B2 (en) | 2006-02-06 | 2011-03-01 | Tokyo Electron Limited | Gas supply system, substrate processing apparatus and gas supply method |
US7938931B2 (en) * | 2006-05-24 | 2011-05-10 | Lam Research Corporation | Edge electrodes with variable power |
US8398778B2 (en) * | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
US7858898B2 (en) * | 2007-01-26 | 2010-12-28 | Lam Research Corporation | Bevel etcher with gap control |
US7943007B2 (en) | 2007-01-26 | 2011-05-17 | Lam Research Corporation | Configurable bevel etcher |
US8137501B2 (en) | 2007-02-08 | 2012-03-20 | Lam Research Corporation | Bevel clean device |
JP2010524225A (en) | 2007-04-02 | 2010-07-15 | ソースル シーオー エルティディー | Substrate support apparatus and plasma etching apparatus including the same |
KR101339700B1 (en) * | 2007-05-08 | 2013-12-10 | (주)소슬 | Gas supplying apparatus and equipment for etching substrate edge having the same |
KR101433769B1 (en) * | 2008-02-05 | 2014-08-25 | (주)소슬 | Semiconductor manufacture equipment for bevel etch |
KR20100069010A (en) * | 2008-12-15 | 2010-06-24 | 주식회사 동부하이텍 | Bevel etching device |
US8323523B2 (en) * | 2008-12-17 | 2012-12-04 | Lam Research Corporation | High pressure bevel etch process |
US8262923B2 (en) * | 2008-12-17 | 2012-09-11 | Lam Research Corporation | High pressure bevel etch process |
JP2011029562A (en) * | 2009-07-29 | 2011-02-10 | Fujitsu Semiconductor Ltd | Processing method of semiconductor-wafer end face, and manufacturing method of semiconductor device |
US20150020848A1 (en) | 2013-07-19 | 2015-01-22 | Lam Research Corporation | Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning |
US20150318150A1 (en) * | 2014-04-30 | 2015-11-05 | Lam Research Corporation | Real-time edge encroachment control for wafer bevel |
KR101998943B1 (en) * | 2016-01-20 | 2019-07-10 | 도쿄엘렉트론가부시키가이샤 | Power modulation for etching high aspect ratio features |
KR102546317B1 (en) * | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10971384B2 (en) * | 2018-09-13 | 2021-04-06 | Lam Research Corporation | Auto-calibrated process independent feedforward control for processing substrates |
KR102116474B1 (en) * | 2020-02-04 | 2020-05-28 | 피에스케이 주식회사 | Substrate processing apparatus and substrate processing method |
KR102396430B1 (en) * | 2020-03-30 | 2022-05-10 | 피에스케이 주식회사 | Substrate processing apparatus and substrate processing method |
KR102396431B1 (en) * | 2020-08-14 | 2022-05-10 | 피에스케이 주식회사 | Substrate processing apparatus and substrate transfer method |
KR102275757B1 (en) * | 2020-08-24 | 2021-07-09 | 피에스케이 주식회사 | Apparatus for treating substrate |
TW202329196A (en) * | 2021-09-17 | 2023-07-16 | 日商東京威力科創股份有限公司 | Plasma processing apparatus |
JP2023044379A (en) * | 2021-09-17 | 2023-03-30 | 東京エレクトロン株式会社 | Plasma processing apparatus |
-
2020
- 2020-02-04 KR KR1020200013296A patent/KR102116474B1/en active IP Right Grant
- 2020-05-07 TW TW109115145A patent/TWI735225B/en active
- 2020-05-18 SG SG10202004597PA patent/SG10202004597PA/en unknown
- 2020-05-28 JP JP2020093189A patent/JP2021125675A/en active Pending
- 2020-05-28 US US16/886,543 patent/US11776791B2/en active Active
- 2020-07-10 CN CN202010662947.4A patent/CN113223914B/en active Active
-
2022
- 2022-04-06 JP JP2022063564A patent/JP7320874B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2022100339A (en) | 2022-07-05 |
CN113223914B (en) | 2024-03-26 |
TW202131432A (en) | 2021-08-16 |
KR102116474B1 (en) | 2020-05-28 |
TWI735225B (en) | 2021-08-01 |
JP2021125675A (en) | 2021-08-30 |
US20210241997A1 (en) | 2021-08-05 |
CN113223914A (en) | 2021-08-06 |
JP7320874B2 (en) | 2023-08-04 |
US11776791B2 (en) | 2023-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10202004597PA (en) | Substrate processing apparatus and substrate processing method | |
SG10201911998QA (en) | Substrate processing method and substrate processing apparatus | |
GB2596825B (en) | Data processing apparatus and method | |
EP4079445A4 (en) | Substrate processing method and substrate processing apparatus | |
SG10202011423RA (en) | Substrate processing method and plasma processing apparatus | |
KR20220036340A (en) | Plasma processing apparatus and plasma processing method | |
EP4177746A4 (en) | Task processing method and related apparatus | |
EP4261676A4 (en) | Distributed application processing method and apparatus | |
SG10202103960VA (en) | Substrate processing method and plasma processing apparatus | |
EP4210403A4 (en) | Data processing method and apparatus | |
GB2610461B (en) | Processing method and apparatus | |
SG10202101193RA (en) | Substrate processing apparatus and substrate processing method | |
GB201905138D0 (en) | Apparatus and method for processing a substrate | |
KR20220035845A (en) | Stage substrate processing apparatus and substrate attraction method | |
KR102377068B1 (en) | Substrate processing method and substrate processing apparatus | |
GB2596588B (en) | Data processing apparatus and method | |
EP4120330A4 (en) | Semiconductor edge processing apparatus and method | |
EP4130993A4 (en) | Special effect processing method and apparatus | |
EP4227893A4 (en) | Processing method and processing device using same | |
EP4152203A4 (en) | Sequence processing method and apparatus | |
EP4102938A4 (en) | Microwave processing apparatus and microwave processing method | |
EP4086046A4 (en) | Processing device and processing method | |
SG10202002354UA (en) | Substrate processing apparatus and article manufacturing method | |
SG11202112722UA (en) | Substrate processing methods and apparatus | |
KR102475096B9 (en) | Substrate processing apparatus and Substrate moving method |