SG10202008872VA - Etching method, plasma processing apparatus, and substrate processing system - Google Patents

Etching method, plasma processing apparatus, and substrate processing system

Info

Publication number
SG10202008872VA
SG10202008872VA SG10202008872VA SG10202008872VA SG10202008872VA SG 10202008872V A SG10202008872V A SG 10202008872VA SG 10202008872V A SG10202008872V A SG 10202008872VA SG 10202008872V A SG10202008872V A SG 10202008872VA SG 10202008872V A SG10202008872V A SG 10202008872VA
Authority
SG
Singapore
Prior art keywords
etching method
processing apparatus
processing system
substrate processing
plasma processing
Prior art date
Application number
SG10202008872VA
Inventor
Takayuki Katsunuma
Masanobu Honda
Yuta Nakane
Shinya Ishikawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2020121613A external-priority patent/JP2021048390A/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10202008872VA publication Critical patent/SG10202008872VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
SG10202008872VA 2019-09-13 2020-09-11 Etching method, plasma processing apparatus, and substrate processing system SG10202008872VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019167063 2019-09-13
JP2020121613A JP2021048390A (en) 2019-09-13 2020-07-15 Etching method, plasma processing apparatus, and substrate processing system

Publications (1)

Publication Number Publication Date
SG10202008872VA true SG10202008872VA (en) 2021-02-25

Family

ID=74758385

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202008872VA SG10202008872VA (en) 2019-09-13 2020-09-11 Etching method, plasma processing apparatus, and substrate processing system

Country Status (2)

Country Link
US (1) US11476123B2 (en)
SG (1) SG10202008872VA (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7323409B2 (en) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
US20230058831A1 (en) * 2021-08-20 2023-02-23 Applied Materials, Inc. Molecular layer deposition liner for 3d nand
WO2023177594A1 (en) * 2022-03-14 2023-09-21 Lam Research Corporation Sidewall passivation using aldehyde or isocyanate chemistry for high aspect ratio etch
US20240112919A1 (en) * 2022-09-29 2024-04-04 Tokyo Electron Limited Low-Temperature Etch
US20240112887A1 (en) * 2022-09-30 2024-04-04 Tokyo Electron Limited: In-Situ Adsorbate Formation for Plasma Etch Process
US20240112888A1 (en) * 2022-09-30 2024-04-04 Tokyo Electron Limited In-Situ Adsorbate Formation for Dielectric Etch

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8277670B2 (en) * 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
US8598016B2 (en) * 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
JP6185305B2 (en) 2013-06-28 2017-08-23 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus
US9997373B2 (en) * 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP2018200925A (en) * 2017-05-25 2018-12-20 東京エレクトロン株式会社 Etching method and etching device
US10256320B1 (en) * 2017-10-06 2019-04-09 International Business Machines Corporation Vertical field-effect-transistors having a silicon oxide layer with controlled thickness
US10978301B2 (en) * 2018-08-31 2021-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Morphology of resist mask prior to etching

Also Published As

Publication number Publication date
US11476123B2 (en) 2022-10-18
US20210082713A1 (en) 2021-03-18

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