KR20200138305A - 기억 장치 및 전자 기기 - Google Patents

기억 장치 및 전자 기기 Download PDF

Info

Publication number
KR20200138305A
KR20200138305A KR1020207030843A KR20207030843A KR20200138305A KR 20200138305 A KR20200138305 A KR 20200138305A KR 1020207030843 A KR1020207030843 A KR 1020207030843A KR 20207030843 A KR20207030843 A KR 20207030843A KR 20200138305 A KR20200138305 A KR 20200138305A
Authority
KR
South Korea
Prior art keywords
transistor
oxide
insulator
conductor
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020207030843A
Other languages
English (en)
Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
기요시 가토
다카히코 이시즈
다츠야 오누키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority to KR1020247033848A priority Critical patent/KR20240152426A/ko
Publication of KR20200138305A publication Critical patent/KR20200138305A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H01L29/786—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
KR1020207030843A 2018-03-29 2019-03-20 기억 장치 및 전자 기기 Ceased KR20200138305A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247033848A KR20240152426A (ko) 2018-03-29 2019-03-20 기억 장치 및 전자 기기

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018065571 2018-03-29
JPJP-P-2018-065571 2018-03-29
JPJP-P-2018-169247 2018-09-10
JP2018169247 2018-09-10
PCT/IB2019/052244 WO2019186323A1 (ja) 2018-03-29 2019-03-20 記憶装置、および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020247033848A Division KR20240152426A (ko) 2018-03-29 2019-03-20 기억 장치 및 전자 기기

Publications (1)

Publication Number Publication Date
KR20200138305A true KR20200138305A (ko) 2020-12-09

Family

ID=68062342

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020207030843A Ceased KR20200138305A (ko) 2018-03-29 2019-03-20 기억 장치 및 전자 기기
KR1020247033848A Pending KR20240152426A (ko) 2018-03-29 2019-03-20 기억 장치 및 전자 기기

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020247033848A Pending KR20240152426A (ko) 2018-03-29 2019-03-20 기억 장치 및 전자 기기

Country Status (5)

Country Link
US (5) US11404107B2 (https=)
JP (3) JP7246376B2 (https=)
KR (2) KR20200138305A (https=)
CN (2) CN119380776A (https=)
WO (1) WO2019186323A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200138305A (ko) 2018-03-29 2020-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
US11440680B2 (en) * 2019-07-09 2022-09-13 United States Of America As Represented By The Secretary Of The Navy Tether management system for a tethered UAV
JP2021100025A (ja) * 2019-12-20 2021-07-01 株式会社半導体エネルギー研究所 撮像装置、撮像装置の駆動方法
CN116194926A (zh) * 2020-09-18 2023-05-30 株式会社半导体能源研究所 半导体装置及电子设备
US12466585B2 (en) * 2022-06-22 2025-11-11 Airhive Inc. Unmanned aerial vehicle (UAV) for facilitating aerial deliveries of cargo
US20260001667A1 (en) * 2022-06-22 2026-01-01 Airhive Inc. Unmanned aerial vehicle (uav) for facilitating aerial deliveries of cargo
CN115240728B (zh) * 2022-07-29 2025-03-28 华中科技大学 一种动态存储器操作方法
JP2024142362A (ja) * 2023-03-30 2024-10-11 エイブリック株式会社 容量素子及び半導体装置
WO2025019818A1 (en) * 2023-07-20 2025-01-23 Micron Technology, Inc. Memory device including memory for neural network

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256820A (ja) 2010-09-03 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100565941B1 (ko) 1997-06-16 2006-03-30 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치
JP4534163B2 (ja) 1997-06-16 2010-09-01 エルピーダメモリ株式会社 半導体集積回路装置
DE102004005667B4 (de) * 2004-02-05 2006-02-09 Infineon Technologies Ag Integrierter Halbleiterspeicher mit temperaturabhängiger Spannungserzeugung und Verfahren zum Betrieb
JP4798342B2 (ja) * 2005-03-31 2011-10-19 カシオ計算機株式会社 表示駆動装置及びその駆動制御方法、並びに、表示装置及びその駆動制御方法
US7907137B2 (en) 2005-03-31 2011-03-15 Casio Computer Co., Ltd. Display drive apparatus, display apparatus and drive control method thereof
JP5240534B2 (ja) * 2005-04-20 2013-07-17 カシオ計算機株式会社 表示装置及びその駆動制御方法
JP2009070480A (ja) 2007-09-13 2009-04-02 Nec Electronics Corp 半導体記憶装置
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11605630B2 (en) * 2009-10-12 2023-03-14 Monolithic 3D Inc. 3D integrated circuit device and structure with hybrid bonding
CN104681079B (zh) * 2009-11-06 2018-02-02 株式会社半导体能源研究所 半导体装置及用于驱动半导体装置的方法
US8339837B2 (en) * 2010-08-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
KR102115344B1 (ko) 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US9111795B2 (en) * 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US20150123117A1 (en) * 2012-05-14 2015-05-07 Sharp Kabushshiki Kaisha Semiconductor device and method for manufacturing same
TWI643435B (zh) * 2013-08-21 2018-12-01 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
US9054696B2 (en) * 2013-10-12 2015-06-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Gate driving circuit, and array substrate and display panel using the same
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
KR102330412B1 (ko) * 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
KR102331396B1 (ko) * 2014-06-13 2021-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9455337B2 (en) * 2014-06-18 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2016067159A1 (en) * 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Functional panel, method for manufacturing the same, module, data processing device
JP6683503B2 (ja) * 2015-03-03 2020-04-22 株式会社半導体エネルギー研究所 半導体装置
US9589611B2 (en) * 2015-04-01 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
JP6717815B2 (ja) 2015-05-28 2020-07-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9935633B2 (en) * 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10501003B2 (en) * 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
JP6584196B2 (ja) * 2015-07-31 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
WO2017051791A1 (ja) * 2015-09-24 2017-03-30 シャープ株式会社 半導体装置およびその製造方法
JP6807725B2 (ja) * 2015-12-22 2021-01-06 株式会社半導体エネルギー研究所 半導体装置、表示パネル、及び電子機器
US9953695B2 (en) * 2015-12-29 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and semiconductor wafer
US20170221899A1 (en) * 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Microcontroller System
WO2017130082A1 (en) * 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6906978B2 (ja) * 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
US10014325B2 (en) * 2016-03-10 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10032492B2 (en) 2016-03-18 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver IC, computer and electronic device
US10236875B2 (en) * 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
JP2017224676A (ja) * 2016-06-14 2017-12-21 株式会社ジャパンディスプレイ 半導体装置及び表示装置
KR102367787B1 (ko) * 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
KR102458660B1 (ko) * 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2018043643A1 (ja) * 2016-09-02 2018-03-08 シャープ株式会社 アクティブマトリクス基板およびアクティブマトリクス基板を備えた表示装置
US10147681B2 (en) * 2016-12-09 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20210125988A1 (en) * 2017-03-13 2021-04-29 Semiconductors Energy Laboratory Co., Ltd. Semiconductor Device and Method for Manufacturing Semiconductor Device
US10312239B2 (en) * 2017-03-16 2019-06-04 Toshiba Memory Corporation Semiconductor memory including semiconductor oxie
US11152366B2 (en) * 2017-06-08 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
KR102391585B1 (ko) * 2017-08-25 2022-04-28 삼성전기주식회사 커패시터 부품
KR102579972B1 (ko) * 2017-09-05 2023-09-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US20200343245A1 (en) * 2017-12-06 2020-10-29 Semiconductor Energy Laboratory Co., Ltd. Storage device and electronic device
TWI794340B (zh) * 2017-12-07 2023-03-01 日商半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
JP7160894B2 (ja) 2018-02-23 2022-10-25 株式会社半導体エネルギー研究所 記憶装置
KR20200138305A (ko) * 2018-03-29 2020-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
US10748931B2 (en) * 2018-05-08 2020-08-18 Micron Technology, Inc. Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirs
US10657899B2 (en) * 2018-06-22 2020-05-19 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Pixel compensation circuit, driving method for the same and amoled display panel

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256820A (ja) 2010-09-03 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
K.Kato et al., "Japanese Journal of Applied Physics", 2012, volume 51, p.021201-1-021201-7
S.Amano et al., "SID Symposium Digest of Technical Papers", 2010, volume 41, issue 1, p.626-62
S.Ito et al., "The Proceedings of AM-FPD'13 Digest of Technical Papers", 2013, p.151-154
S.Matsuda et al., "2015 Symposium on VLSI Technology Digest of Technical Papers", 2015, p.T216-T217
S.Yamazaki et al., "ECS Journal of Solid State Science and Technology", 2014, volume3, issue 9, p.Q3012-Q3022
S.Yamazaki et al., "Japanese Journal of Applied Physics", 2014, volume 53, Number 4S, p.04ED18-1-04ED18-10
S.Yamazaki et al., "SID Symposium Digest of Technical Papers", 2012, volume 43, issue1, p.183-186
S.Yamazaki, "ECS Transactions", 2014, volume 64, issue 10, p.155-164
T.Onuki et al., "DRAM with Storage Capacitance of 3.9fF using CAAC-OS Transistor with L of 60nm and having More Than 1-h Retention Characteristics", Ext.Abstr.SSDM, 2014, pp.430-431.

Also Published As

Publication number Publication date
JPWO2019186323A1 (ja) 2021-04-01
US20250210094A1 (en) 2025-06-26
US11705184B2 (en) 2023-07-18
US20240304231A1 (en) 2024-09-12
CN111937074A (zh) 2020-11-13
WO2019186323A1 (ja) 2019-10-03
CN119380776A (zh) 2025-01-28
KR20240152426A (ko) 2024-10-21
US20220328092A1 (en) 2022-10-13
US20230335180A1 (en) 2023-10-19
JP2025186454A (ja) 2025-12-23
JP7246376B2 (ja) 2023-03-27
US12260898B2 (en) 2025-03-25
US11984152B2 (en) 2024-05-14
JP2023073282A (ja) 2023-05-25
US20210027828A1 (en) 2021-01-28
US11404107B2 (en) 2022-08-02
CN111937074B (zh) 2024-11-22

Similar Documents

Publication Publication Date Title
JP7246376B2 (ja) 記憶装置、および電子機器
JP7429686B2 (ja) 半導体装置
US12593432B2 (en) Semiconductor device including layer comprising memory cell
WO2019220259A1 (ja) 記憶装置、半導体装置、および電子機器
JP7221215B2 (ja) 記憶装置
TWI863944B (zh) 半導體裝置
JP7297683B2 (ja) 半導体装置
JP2020017327A (ja) 記憶装置、半導体装置、および電子機器
JP7467430B2 (ja) 記憶装置
JPWO2019111112A1 (ja) 半導体装置
JP2026001010A (ja) 半導体装置
JP2019185833A (ja) 記憶装置、記憶装置の動作方法、および電子機器
JP2020031503A (ja) 半導体装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20201026

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20220317

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20240521

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20241022

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D