KR20200049878A - 웨이퍼의 가공 방법 - Google Patents

웨이퍼의 가공 방법 Download PDF

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Publication number
KR20200049878A
KR20200049878A KR1020207012050A KR20207012050A KR20200049878A KR 20200049878 A KR20200049878 A KR 20200049878A KR 1020207012050 A KR1020207012050 A KR 1020207012050A KR 20207012050 A KR20207012050 A KR 20207012050A KR 20200049878 A KR20200049878 A KR 20200049878A
Authority
KR
South Korea
Prior art keywords
wafer
tape
grinding
back surface
cutting line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020207012050A
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English (en)
Korean (ko)
Inventor
료스케 가타오카
다카시 다모가미
슈헤이 오시다
Original Assignee
가부시키가이샤 도교 세이미쓰
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도교 세이미쓰 filed Critical 가부시키가이샤 도교 세이미쓰
Priority to KR1020207033283A priority Critical patent/KR102520523B1/ko
Publication of KR20200049878A publication Critical patent/KR20200049878A/ko
Ceased legal-status Critical Current

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Classifications

    • H01L21/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H01L21/304—
    • H01L21/6836—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
KR1020207012050A 2017-11-06 2018-10-29 웨이퍼의 가공 방법 Ceased KR20200049878A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207033283A KR102520523B1 (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2017-213724 2017-11-06
JP2017213724A JP7157301B2 (ja) 2017-11-06 2017-11-06 ウェーハの加工方法
PCT/JP2018/040067 WO2019088011A1 (ja) 2017-11-06 2018-10-29 ウェーハの加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207033283A Division KR102520523B1 (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Publications (1)

Publication Number Publication Date
KR20200049878A true KR20200049878A (ko) 2020-05-08

Family

ID=66331719

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020207012050A Ceased KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법
KR1020207033283A Active KR102520523B1 (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207033283A Active KR102520523B1 (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Country Status (4)

Country Link
US (1) US11075071B2 (https=)
JP (2) JP7157301B2 (https=)
KR (2) KR20200049878A (https=)
WO (1) WO2019088011A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7460386B2 (ja) * 2020-02-14 2024-04-02 株式会社ディスコ 被加工物の加工方法
JP7824105B2 (ja) * 2022-03-04 2026-03-04 株式会社ディスコ 分割装置及びチップの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004001076A (ja) 2002-03-12 2004-01-08 Hamamatsu Photonics Kk レーザ加工方法
JP2009182099A (ja) 2008-01-30 2009-08-13 Tokyo Seimitsu Co Ltd バンプが形成されたウェーハを処理するウェーハ処理方法
JP2016040079A (ja) 2014-08-12 2016-03-24 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法及び分断装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3832353B2 (ja) * 2002-02-15 2006-10-11 松下電器産業株式会社 半導体装置の製造方法
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
US7241642B2 (en) * 2004-01-30 2007-07-10 Intel Corporation Mounting and dicing process for wafers
JP2007235068A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP2011054827A (ja) * 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
JP2012104644A (ja) * 2010-11-10 2012-05-31 Tokyo Seimitsu Co Ltd ウェーハ破断方法およびウェーハ破断装置
JP5803049B2 (ja) * 2011-06-13 2015-11-04 株式会社東京精密 半導体基板の切断方法
JP5824365B2 (ja) 2012-01-16 2015-11-25 三星ダイヤモンド工業株式会社 脆性材料基板のブレイク方法
JP6061590B2 (ja) 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法
JP6059499B2 (ja) * 2012-10-05 2017-01-11 リンテック株式会社 表面保護シート
JP2014165462A (ja) * 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
US9230862B2 (en) * 2013-05-14 2016-01-05 Texas Instruments Incorporated Wafer die separation
JP5637330B1 (ja) * 2013-07-01 2014-12-10 富士ゼロックス株式会社 半導体片の製造方法、半導体片を含む回路基板および画像形成装置
JP6185792B2 (ja) * 2013-08-29 2017-08-23 三星ダイヤモンド工業株式会社 半導体ウエハの分断方法
JP6119551B2 (ja) 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP6119550B2 (ja) 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 エキスパンダ、破断装置及び分断方法
JP6517588B2 (ja) * 2015-05-27 2019-05-22 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP6265175B2 (ja) * 2015-06-30 2018-01-24 日亜化学工業株式会社 半導体素子の製造方法
US11437275B2 (en) 2015-08-31 2022-09-06 Disco Corporation Method of processing wafer and protective sheeting for use in this method
JP2017079291A (ja) * 2015-10-21 2017-04-27 株式会社ディスコ ウエーハの加工方法
JP6574688B2 (ja) * 2015-11-19 2019-09-11 日東電工株式会社 シート状樹脂組成物、積層シート及び半導体装置の製造方法
JP6721325B2 (ja) * 2015-12-14 2020-07-15 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP6621338B2 (ja) 2016-02-09 2019-12-18 株式会社ディスコ 被加工物の樹脂被覆方法及び被加工物の加工方法
US10453764B2 (en) * 2016-08-11 2019-10-22 Advanced Semiconductor Engineering, Inc. Molding for large panel fan-out package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004001076A (ja) 2002-03-12 2004-01-08 Hamamatsu Photonics Kk レーザ加工方法
JP2009182099A (ja) 2008-01-30 2009-08-13 Tokyo Seimitsu Co Ltd バンプが形成されたウェーハを処理するウェーハ処理方法
JP2016040079A (ja) 2014-08-12 2016-03-24 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法及び分断装置

Also Published As

Publication number Publication date
US20200266047A1 (en) 2020-08-20
WO2019088011A1 (ja) 2019-05-09
KR102520523B1 (ko) 2023-04-12
US11075071B2 (en) 2021-07-27
KR20200133022A (ko) 2020-11-25
JP2019087604A (ja) 2019-06-06
JP2022172109A (ja) 2022-11-15
JP7157301B2 (ja) 2022-10-20

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