KR20180128100A - 호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료 - Google Patents

호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료 Download PDF

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KR20180128100A
KR20180128100A KR1020187034121A KR20187034121A KR20180128100A KR 20180128100 A KR20180128100 A KR 20180128100A KR 1020187034121 A KR1020187034121 A KR 1020187034121A KR 20187034121 A KR20187034121 A KR 20187034121A KR 20180128100 A KR20180128100 A KR 20180128100A
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South Korea
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oxo
oxa
meth
acrylic acid
homo
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Korean (ko)
Inventor
신지 다나카
요시타카 우에노야마
히데토시 오노
나오야 가와노
가츠키 이토
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오사카 유키가가쿠고교 가부시키가이샤
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Publication of KR20180128100A publication Critical patent/KR20180128100A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D313/00—Heterocyclic compounds containing rings of more than six members having one oxygen atom as the only ring hetero atom
    • C07D313/02—Seven-membered rings
    • C07D313/06—Seven-membered rings condensed with carbocyclic rings or ring systems
    • C07D313/10—Seven-membered rings condensed with carbocyclic rings or ring systems condensed with two six-membered rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • H01L21/0273—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Pyrane Compounds (AREA)
KR1020187034121A 2010-04-02 2011-03-16 호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료 Ceased KR20180128100A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-086352 2010-04-02
JP2010086352A JP2011219363A (ja) 2010-04-02 2010-04-02 ホモアダマンタン誘導体、その製造方法及びフォトレジスト用感光性材料
PCT/JP2011/001532 WO2011125291A1 (ja) 2010-04-02 2011-03-16 ホモアダマンタン誘導体、その製造方法及びフォトレジスト用感光性材料

Related Parent Applications (1)

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KR1020177021225A Division KR102061400B1 (ko) 2010-04-02 2011-03-16 호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료

Publications (1)

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KR20180128100A true KR20180128100A (ko) 2018-11-30

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KR1020187034121A Ceased KR20180128100A (ko) 2010-04-02 2011-03-16 호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료
KR1020127025834A Ceased KR20130034016A (ko) 2010-04-02 2011-03-16 호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료
KR1020177021225A Active KR102061400B1 (ko) 2010-04-02 2011-03-16 호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료

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KR1020177021225A Active KR102061400B1 (ko) 2010-04-02 2011-03-16 호모아다만탄 유도체, 그 제조 방법 및 포토레지스트용 감광성 재료

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US (2) US20130022914A1 (https=)
JP (1) JP2011219363A (https=)
KR (3) KR20180128100A (https=)
CN (2) CN103097371A (https=)
WO (1) WO2011125291A1 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5608009B2 (ja) 2010-08-12 2014-10-15 大阪有機化学工業株式会社 ホモアダマンタン誘導体、その製造方法及びフォトレジスト組成物
JP6014980B2 (ja) * 2011-02-08 2016-10-26 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP2013225094A (ja) * 2011-10-07 2013-10-31 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
JP6330250B2 (ja) * 2012-03-07 2018-05-30 住友化学株式会社 レジストパターンの製造方法
JP6123383B2 (ja) * 2012-03-23 2017-05-10 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP6142602B2 (ja) * 2012-03-23 2017-06-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6123384B2 (ja) * 2012-03-23 2017-05-10 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP6134563B2 (ja) * 2012-04-27 2017-05-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6134562B2 (ja) * 2012-04-27 2017-05-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6315748B2 (ja) * 2012-04-27 2018-04-25 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6195725B2 (ja) * 2012-05-01 2017-09-13 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP6174363B2 (ja) * 2012-05-14 2017-08-02 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6174362B2 (ja) * 2012-05-14 2017-08-02 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6208974B2 (ja) * 2012-05-15 2017-10-04 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246493B2 (ja) * 2012-05-15 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246492B2 (ja) * 2012-05-15 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246491B2 (ja) * 2012-05-15 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6145303B2 (ja) * 2012-05-18 2017-06-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246495B2 (ja) * 2012-05-18 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6208976B2 (ja) * 2012-05-18 2017-10-04 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246494B2 (ja) * 2012-05-18 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6181996B2 (ja) * 2012-07-03 2017-08-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6149511B2 (ja) * 2012-07-12 2017-06-21 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6276966B2 (ja) * 2012-11-15 2018-02-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5978139B2 (ja) * 2013-01-22 2016-08-24 東京応化工業株式会社 レジストパターン形成方法
CN105474140B (zh) * 2013-08-05 2018-09-25 阿尔卑斯电气株式会社 透光性导电构件及其布图方法
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
EP3161019A4 (en) * 2014-06-27 2018-01-24 Henkel IP & Holding GmbH Alkoxysilane-functionalized hydrocarbon compounds, intermediates thereof and methods of preparation thereof
US10174546B2 (en) * 2015-03-03 2019-01-08 Mechoshade Systems, Llc Shade adjustment notification system and method
JP6864994B2 (ja) * 2015-06-26 2021-04-28 住友化学株式会社 レジスト組成物
JP6670694B2 (ja) * 2015-07-14 2020-03-25 住友化学株式会社 レジスト組成物及びレジストパターン製造方法
JP6960308B2 (ja) * 2016-12-01 2021-11-05 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
CN110352184B (zh) 2017-01-20 2022-02-11 赢创运营有限公司 贮存稳定的甘油(甲基)丙烯酸酯羧酸酯
JP7040280B2 (ja) * 2017-06-13 2022-03-23 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6780602B2 (ja) 2017-07-31 2020-11-04 信越化学工業株式会社 レジスト組成物及びパターン形成方法
EP3611155A1 (en) 2018-08-16 2020-02-19 Evonik Operations GmbH Preparation of (meth)acrylic acid esters

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3763693B2 (ja) * 1998-08-10 2006-04-05 株式会社東芝 感光性組成物及びパターン形成方法
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
JP2003005375A (ja) * 2001-06-21 2003-01-08 Fuji Photo Film Co Ltd ポジ型レジスト組成物
TWI465467B (zh) * 2004-03-08 2014-12-21 三菱麗陽股份有限公司 光阻用聚合物、光阻組成物及圖案製造方法與光阻用聚合物用原料化合物
JPWO2005108343A1 (ja) * 2004-05-10 2008-03-21 出光興産株式会社 アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
WO2005111097A1 (ja) * 2004-05-18 2005-11-24 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
US20050282985A1 (en) * 2004-06-17 2005-12-22 Hiroshi Koyama Fluorine-atom-containing polymerizable unsaturated-monomer, fluorine-atom-containing polymeric compound and photoresist resin composition
TWI400571B (zh) * 2006-03-14 2013-07-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
EP1975705B1 (en) * 2007-03-28 2016-04-27 FUJIFILM Corporation Positive resist composition and pattern-forming method
TWI403846B (zh) * 2008-02-22 2013-08-01 Tokyo Ohka Kogyo Co Ltd 正型光阻組成物，光阻圖型之形成方法及高分子化合物
JP2009280538A (ja) * 2008-05-23 2009-12-03 Idemitsu Kosan Co Ltd 脂環構造含有化合物、（メタ）アクリル酸エステル類、（メタ）アクリル系重合体並びにそれを含むポジ型レジスト組成物
JP4671065B2 (ja) * 2008-09-05 2011-04-13 信越化学工業株式会社 ダブルパターン形成方法
JP5629454B2 (ja) * 2008-12-12 2014-11-19 富士フイルム株式会社 重合性化合物、ラクトン含有化合物、ラクトン含有化合物の製造方法、及び、該重合性化合物を重合させた高分子化合物

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US20130022914A1 (en) 2013-01-24
CN103097371A (zh) 2013-05-08
KR20130034016A (ko) 2013-04-04
US20150316847A1 (en) 2015-11-05
KR20170091182A (ko) 2017-08-08
CN104877067A (zh) 2015-09-02
KR102061400B1 (ko) 2019-12-31
WO2011125291A1 (ja) 2011-10-13
JP2011219363A (ja) 2011-11-04

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