KR20180104736A - 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법 - Google Patents
표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법 Download PDFInfo
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- KR20180104736A KR20180104736A KR1020187024835A KR20187024835A KR20180104736A KR 20180104736 A KR20180104736 A KR 20180104736A KR 1020187024835 A KR1020187024835 A KR 1020187024835A KR 20187024835 A KR20187024835 A KR 20187024835A KR 20180104736 A KR20180104736 A KR 20180104736A
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Materials For Photolithography (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016020151A JP2017138514A (ja) | 2016-02-04 | 2016-02-04 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
| JPJP-P-2016-020151 | 2016-02-04 | ||
| PCT/EP2017/000083 WO2017133830A1 (en) | 2016-02-04 | 2017-01-25 | Surface treatment composition and surface treatment method of resist pattern using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180104736A true KR20180104736A (ko) | 2018-09-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| KR1020187024835A Withdrawn KR20180104736A (ko) | 2016-02-04 | 2017-01-25 | 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20190041757A1 (https=) |
| JP (2) | JP2017138514A (https=) |
| KR (1) | KR20180104736A (https=) |
| CN (1) | CN108604070A (https=) |
| TW (1) | TW201739842A (https=) |
| WO (1) | WO2017133830A1 (https=) |
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| JP2018005046A (ja) * | 2016-07-05 | 2018-01-11 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ | 反転パターン形成組成物、反転パターンの形成方法、および素子の形成方法 |
| JP2021525388A (ja) * | 2018-05-25 | 2021-09-24 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法 |
| WO2021020091A1 (ja) * | 2019-07-29 | 2021-02-04 | Jsr株式会社 | 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法 |
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| JP2002030118A (ja) * | 2000-07-14 | 2002-01-31 | Tokyo Ohka Kogyo Co Ltd | 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法 |
| DE10129577A1 (de) * | 2001-06-20 | 2003-01-16 | Infineon Technologies Ag | Silylierverfahren für Fotoresists im UV-Bereich |
| KR100618850B1 (ko) * | 2004-07-22 | 2006-09-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| DE102004041610B4 (de) * | 2004-08-27 | 2006-09-07 | Kodak Polychrome Graphics Gmbh | Verfahren zur Herstellung einer Lithographie-Druckplatte |
| US7566525B2 (en) | 2005-06-14 | 2009-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication |
| US7531296B2 (en) | 2005-08-24 | 2009-05-12 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Method of forming high etch resistant resist patterns |
| US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
| JP5446648B2 (ja) * | 2008-10-07 | 2014-03-19 | 信越化学工業株式会社 | パターン形成方法 |
| CN102439523B (zh) * | 2009-07-23 | 2015-01-07 | 道康宁公司 | 用于双重图案化的方法和材料 |
| CN102686410B (zh) * | 2009-12-29 | 2016-08-10 | 东洋纺织株式会社 | 柔性印刷版及其制造方法 |
| US8852848B2 (en) * | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
| WO2014157064A1 (ja) * | 2013-03-28 | 2014-10-02 | 東洋紡株式会社 | フレキソ印刷版の製造方法 |
-
2016
- 2016-02-04 JP JP2016020151A patent/JP2017138514A/ja active Pending
-
2017
- 2017-01-25 WO PCT/EP2017/000083 patent/WO2017133830A1/en not_active Ceased
- 2017-01-25 US US16/074,843 patent/US20190041757A1/en not_active Abandoned
- 2017-01-25 KR KR1020187024835A patent/KR20180104736A/ko not_active Withdrawn
- 2017-01-25 CN CN201780008738.4A patent/CN108604070A/zh active Pending
- 2017-01-25 JP JP2018534865A patent/JP6780004B2/ja active Active
- 2017-02-03 TW TW106103679A patent/TW201739842A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017133830A1 (en) | 2017-08-10 |
| JP2019507373A (ja) | 2019-03-14 |
| CN108604070A (zh) | 2018-09-28 |
| US20190041757A1 (en) | 2019-02-07 |
| TW201739842A (zh) | 2017-11-16 |
| JP2017138514A (ja) | 2017-08-10 |
| JP6780004B2 (ja) | 2020-11-04 |
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| PA0105 | International application |
Patent event date: 20180828 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PC1203 | Withdrawal of no request for examination |