KR20180104736A - 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법 - Google Patents

표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법 Download PDF

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Publication number
KR20180104736A
KR20180104736A KR1020187024835A KR20187024835A KR20180104736A KR 20180104736 A KR20180104736 A KR 20180104736A KR 1020187024835 A KR1020187024835 A KR 1020187024835A KR 20187024835 A KR20187024835 A KR 20187024835A KR 20180104736 A KR20180104736 A KR 20180104736A
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KR
South Korea
Prior art keywords
resist pattern
composition
resist
carbon atoms
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020187024835A
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English (en)
Korean (ko)
Inventor
샤오웨이 왕
타쓰로 나가하라
Original Assignee
에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. filed Critical 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
Publication of KR20180104736A publication Critical patent/KR20180104736A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
KR1020187024835A 2016-02-04 2017-01-25 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법 Withdrawn KR20180104736A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016020151A JP2017138514A (ja) 2016-02-04 2016-02-04 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法
JPJP-P-2016-020151 2016-02-04
PCT/EP2017/000083 WO2017133830A1 (en) 2016-02-04 2017-01-25 Surface treatment composition and surface treatment method of resist pattern using the same

Publications (1)

Publication Number Publication Date
KR20180104736A true KR20180104736A (ko) 2018-09-21

Family

ID=58018050

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187024835A Withdrawn KR20180104736A (ko) 2016-02-04 2017-01-25 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법

Country Status (6)

Country Link
US (1) US20190041757A1 (https=)
JP (2) JP2017138514A (https=)
KR (1) KR20180104736A (https=)
CN (1) CN108604070A (https=)
TW (1) TW201739842A (https=)
WO (1) WO2017133830A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018005046A (ja) * 2016-07-05 2018-01-11 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 反転パターン形成組成物、反転パターンの形成方法、および素子の形成方法
JP2021525388A (ja) * 2018-05-25 2021-09-24 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法
KR20220041836A (ko) * 2019-07-29 2022-04-01 제이에스알 가부시끼가이샤 조성물, 규소 함유막, 규소 함유막의 형성 방법 및 반도체 기판의 처리 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
DE10129577A1 (de) * 2001-06-20 2003-01-16 Infineon Technologies Ag Silylierverfahren für Fotoresists im UV-Bereich
KR100618850B1 (ko) * 2004-07-22 2006-09-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
DE102004041610B4 (de) * 2004-08-27 2006-09-07 Kodak Polychrome Graphics Gmbh Verfahren zur Herstellung einer Lithographie-Druckplatte
US7566525B2 (en) 2005-06-14 2009-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
US7531296B2 (en) 2005-08-24 2009-05-12 Taiwan Semiconductor Manufacturing, Co., Ltd. Method of forming high etch resistant resist patterns
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
JP5446648B2 (ja) * 2008-10-07 2014-03-19 信越化学工業株式会社 パターン形成方法
US8728335B2 (en) * 2009-07-23 2014-05-20 Dow Corning Corporation Method and materials for double patterning
ES2665942T3 (es) * 2009-12-29 2018-04-30 Toyobo Co., Ltd Método para fabricar placa de impresión flexográfica y placa de impresión flexográfica
US8852848B2 (en) * 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
WO2014157064A1 (ja) * 2013-03-28 2014-10-02 東洋紡株式会社 フレキソ印刷版の製造方法

Also Published As

Publication number Publication date
WO2017133830A1 (en) 2017-08-10
JP2019507373A (ja) 2019-03-14
JP6780004B2 (ja) 2020-11-04
JP2017138514A (ja) 2017-08-10
TW201739842A (zh) 2017-11-16
CN108604070A (zh) 2018-09-28
US20190041757A1 (en) 2019-02-07

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Date Code Title Description
PA0105 International application

Patent event date: 20180828

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid