JP2017138514A - 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 - Google Patents

表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 Download PDF

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Publication number
JP2017138514A
JP2017138514A JP2016020151A JP2016020151A JP2017138514A JP 2017138514 A JP2017138514 A JP 2017138514A JP 2016020151 A JP2016020151 A JP 2016020151A JP 2016020151 A JP2016020151 A JP 2016020151A JP 2017138514 A JP2017138514 A JP 2017138514A
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JP
Japan
Prior art keywords
group
composition
resist pattern
carbon atoms
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016020151A
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English (en)
Japanese (ja)
Inventor
暁 偉 王
Xiaowei Wang
暁 偉 王
原 達 郎 長
Tatsuro Nagahara
原 達 郎 長
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Luxembourg SARL
Original Assignee
AZ Electronic Materials Luxembourg SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Luxembourg SARL filed Critical AZ Electronic Materials Luxembourg SARL
Priority to JP2016020151A priority Critical patent/JP2017138514A/ja
Priority to KR1020187024835A priority patent/KR20180104736A/ko
Priority to US16/074,843 priority patent/US20190041757A1/en
Priority to PCT/EP2017/000083 priority patent/WO2017133830A1/en
Priority to JP2018534865A priority patent/JP6780004B2/ja
Priority to CN201780008738.4A priority patent/CN108604070A/zh
Priority to TW106103679A priority patent/TW201739842A/zh
Publication of JP2017138514A publication Critical patent/JP2017138514A/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
JP2016020151A 2016-02-04 2016-02-04 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 Pending JP2017138514A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2016020151A JP2017138514A (ja) 2016-02-04 2016-02-04 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法
KR1020187024835A KR20180104736A (ko) 2016-02-04 2017-01-25 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법
US16/074,843 US20190041757A1 (en) 2016-02-04 2017-01-25 Surface treatment composition and surface treatment method of resist pattern using the same
PCT/EP2017/000083 WO2017133830A1 (en) 2016-02-04 2017-01-25 Surface treatment composition and surface treatment method of resist pattern using the same
JP2018534865A JP6780004B2 (ja) 2016-02-04 2017-01-25 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法
CN201780008738.4A CN108604070A (zh) 2016-02-04 2017-01-25 表面处理用组合物以及使用其的抗蚀图案的表面处理方法
TW106103679A TW201739842A (zh) 2016-02-04 2017-02-03 表面處理用組成物及使用其之光阻圖案之表面處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016020151A JP2017138514A (ja) 2016-02-04 2016-02-04 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法

Publications (1)

Publication Number Publication Date
JP2017138514A true JP2017138514A (ja) 2017-08-10

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016020151A Pending JP2017138514A (ja) 2016-02-04 2016-02-04 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法
JP2018534865A Active JP6780004B2 (ja) 2016-02-04 2017-01-25 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018534865A Active JP6780004B2 (ja) 2016-02-04 2017-01-25 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法

Country Status (6)

Country Link
US (1) US20190041757A1 (https=)
JP (2) JP2017138514A (https=)
KR (1) KR20180104736A (https=)
CN (1) CN108604070A (https=)
TW (1) TW201739842A (https=)
WO (1) WO2017133830A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018005046A (ja) * 2016-07-05 2018-01-11 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 反転パターン形成組成物、反転パターンの形成方法、および素子の形成方法
JP2021525388A (ja) * 2018-05-25 2021-09-24 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法
WO2021020091A1 (ja) * 2019-07-29 2021-02-04 Jsr株式会社 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
DE10129577A1 (de) * 2001-06-20 2003-01-16 Infineon Technologies Ag Silylierverfahren für Fotoresists im UV-Bereich
KR100618850B1 (ko) * 2004-07-22 2006-09-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
DE102004041610B4 (de) * 2004-08-27 2006-09-07 Kodak Polychrome Graphics Gmbh Verfahren zur Herstellung einer Lithographie-Druckplatte
US7566525B2 (en) 2005-06-14 2009-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
US7531296B2 (en) 2005-08-24 2009-05-12 Taiwan Semiconductor Manufacturing, Co., Ltd. Method of forming high etch resistant resist patterns
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
JP5446648B2 (ja) * 2008-10-07 2014-03-19 信越化学工業株式会社 パターン形成方法
CN102439523B (zh) * 2009-07-23 2015-01-07 道康宁公司 用于双重图案化的方法和材料
CN102686410B (zh) * 2009-12-29 2016-08-10 东洋纺织株式会社 柔性印刷版及其制造方法
US8852848B2 (en) * 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
WO2014157064A1 (ja) * 2013-03-28 2014-10-02 東洋紡株式会社 フレキソ印刷版の製造方法

Also Published As

Publication number Publication date
WO2017133830A1 (en) 2017-08-10
JP2019507373A (ja) 2019-03-14
CN108604070A (zh) 2018-09-28
US20190041757A1 (en) 2019-02-07
TW201739842A (zh) 2017-11-16
JP6780004B2 (ja) 2020-11-04
KR20180104736A (ko) 2018-09-21

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