KR20180097179A - 실리콘 관통 비아들의 도금의 프로세스 및 케미스트리 - Google Patents

실리콘 관통 비아들의 도금의 프로세스 및 케미스트리 Download PDF

Info

Publication number
KR20180097179A
KR20180097179A KR1020187023965A KR20187023965A KR20180097179A KR 20180097179 A KR20180097179 A KR 20180097179A KR 1020187023965 A KR1020187023965 A KR 1020187023965A KR 20187023965 A KR20187023965 A KR 20187023965A KR 20180097179 A KR20180097179 A KR 20180097179A
Authority
KR
South Korea
Prior art keywords
substrate
depositing
layer
silicon substrate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020187023965A
Other languages
English (en)
Korean (ko)
Inventor
로만 고우크
스티븐 버하벨베케
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20180097179A publication Critical patent/KR20180097179A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/48—Electroplating: Baths therefor from solutions of gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
KR1020187023965A 2016-01-21 2016-12-19 실리콘 관통 비아들의 도금의 프로세스 및 케미스트리 Withdrawn KR20180097179A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662281470P 2016-01-21 2016-01-21
US62/281,470 2016-01-21
PCT/US2016/067571 WO2017127197A1 (en) 2016-01-21 2016-12-19 Process and chemistry of plating of through silicon vias

Publications (1)

Publication Number Publication Date
KR20180097179A true KR20180097179A (ko) 2018-08-30

Family

ID=59359138

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187023965A Withdrawn KR20180097179A (ko) 2016-01-21 2016-12-19 실리콘 관통 비아들의 도금의 프로세스 및 케미스트리

Country Status (6)

Country Link
US (1) US9935004B2 (enExample)
JP (1) JP6903061B2 (enExample)
KR (1) KR20180097179A (enExample)
CN (1) CN108474129B (enExample)
TW (1) TWI718227B (enExample)
WO (1) WO2017127197A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3920200A1 (en) 2014-05-05 2021-12-08 3D Glass Solutions, Inc. 2d and 3d inductors antenna and transformers fabricating photoactive substrates
US12165809B2 (en) 2016-02-25 2024-12-10 3D Glass Solutions, Inc. 3D capacitor and capacitor array fabricating photoactive substrates
KR20180134868A (ko) 2016-02-25 2018-12-19 3디 글래스 솔루션즈 인코포레이티드 3d 커패시터 및 커패시터 어레이 제작용 광활성 기재
US11161773B2 (en) 2016-04-08 2021-11-02 3D Glass Solutions, Inc. Methods of fabricating photosensitive substrates suitable for optical coupler
KR102424817B1 (ko) * 2016-10-17 2022-07-25 도쿄엘렉트론가부시키가이샤 금속 배선층 형성 방법, 금속 배선층 형성 장치 및 기억 매체
US10103056B2 (en) * 2017-03-08 2018-10-16 Lam Research Corporation Methods for wet metal seed deposition for bottom up gapfill of features
WO2018200804A1 (en) 2017-04-28 2018-11-01 3D Glass Solutions, Inc. Rf circulator
JP6995891B2 (ja) 2017-07-07 2022-01-17 スリーディー グラス ソリューションズ，インク パッケージ光活性ガラス基板内のｒｆシステムのための２ｄ及び３ｄのｒｆ集中素子デバイス
US10854946B2 (en) 2017-12-15 2020-12-01 3D Glass Solutions, Inc. Coupled transmission line resonate RF filter
WO2019136024A1 (en) 2018-01-04 2019-07-11 3D Glass Solutions, Inc. Impedance matching conductive structure for high efficiency rf circuits
KR102626372B1 (ko) 2018-04-10 2024-01-16 3디 글래스 솔루션즈 인코포레이티드 Rf 집적형 전력 조절 커패시터
JP6976409B2 (ja) 2018-05-29 2021-12-08 スリーディー グラス ソリューションズ, インク3D Glass Solutions, Inc 低挿入損失ｒｆ伝送線路
CA3112608C (en) 2018-09-17 2021-12-28 3D Glass Solutions, Inc. High efficiency compact slotted antenna with a ground plane
US10651081B2 (en) * 2018-09-21 2020-05-12 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof
JP7080781B2 (ja) * 2018-09-26 2022-06-06 株式会社東芝 多孔質層の形成方法、エッチング方法、物品の製造方法、半導体装置の製造方法、及びめっき液
US10734308B2 (en) 2018-11-20 2020-08-04 Nanya Technology Corporation Semiconductor device and method for manufacturing the same
CA3107812C (en) 2018-12-28 2023-06-27 3D Glass Solutions, Inc. Annular capacitor rf, microwave and mm wave systems
KR102393450B1 (ko) 2018-12-28 2022-05-04 3디 글래스 솔루션즈 인코포레이티드 광활성 유리 기판들에서 ｒｆ, 마이크로파, 및 ｍｍ 파 시스템들을 위한 이종 통합
WO2020161256A1 (en) * 2019-02-08 2020-08-13 Aveni Electrodeposition of a cobalt or copper alloy, and use in microelectronics
FR3092589A1 (fr) * 2019-02-08 2020-08-14 Aveni Electrodéposition d’un alliage de cobalt et utilisation en microélectronique
US11962057B2 (en) 2019-04-05 2024-04-16 3D Glass Solutions, Inc. Glass based empty substrate integrated waveguide devices
JP7188825B2 (ja) 2019-04-18 2022-12-13 スリーディー グラス ソリューションズ，インク 高効率ダイダイシング及びリリース
KR102633148B1 (ko) 2019-05-28 2024-02-06 삼성전자주식회사 관통 비아를 포함하는 반도체 장치 및 이의 제조 방법
US11121088B2 (en) * 2019-10-16 2021-09-14 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method of manufacturing the same
CN110767604B (zh) * 2019-10-31 2022-03-18 厦门市三安集成电路有限公司 化合物半导体器件和化合物半导体器件的背面铜制程方法
EP4121988A4 (en) 2020-04-17 2023-08-30 3D Glass Solutions, Inc. BROADBAND INDUCTOR
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
JP2022141425A (ja) * 2021-03-15 2022-09-29 キオクシア株式会社 半導体製造方法および半導体装置
FI20215520A1 (en) * 2021-05-04 2022-11-05 Iqm Finland Oy Superconducting vias in the substrate
CN116033820A (zh) * 2021-10-26 2023-04-28 联华电子股份有限公司 半导体元件及其制作方法
JP2025124244A (ja) * 2024-02-14 2025-08-26 富士フイルム株式会社 電鋳用原盤、電鋳用原盤の製造方法、及び金属成形物製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321283A (en) 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US20020111013A1 (en) * 2001-02-15 2002-08-15 Okada Lynn A. Method for formation of single inlaid structures
JP4043234B2 (ja) 2001-06-18 2008-02-06 株式会社荏原製作所 電解加工装置及び基板処理装置
US6509267B1 (en) * 2001-06-20 2003-01-21 Advanced Micro Devices, Inc. Method of forming low resistance barrier on low k interconnect with electrolessly plated copper seed layer
JP4304905B2 (ja) * 2002-03-13 2009-07-29 セイコーエプソン株式会社 半導体装置の製造方法
US6897148B2 (en) 2003-04-09 2005-05-24 Tru-Si Technologies, Inc. Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby
US20070125657A1 (en) 2003-07-08 2007-06-07 Zhi-Wen Sun Method of direct plating of copper on a substrate structure
US7659203B2 (en) 2005-03-18 2010-02-09 Applied Materials, Inc. Electroless deposition process on a silicon contact
EP1937419A4 (en) 2005-09-08 2009-11-04 Applied Materials Inc ELECTRICITY-FREE MODELING METALLIZATION PROCESS FOR LARGE-SURFACE ELECTRONICS
US20070071888A1 (en) 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
JP2008053568A (ja) 2006-08-25 2008-03-06 Nec Electronics Corp 半導体装置および半導体装置の製造方法
KR100883806B1 (ko) 2007-01-02 2009-02-17 삼성전자주식회사 반도체 장치 및 그 형성방법
US7566657B2 (en) * 2007-01-17 2009-07-28 Hewlett-Packard Development Company, L.P. Methods of forming through-substrate interconnects
CN100483677C (zh) * 2007-01-29 2009-04-29 清华大学 用超声化学镀制备集成电路铜互连线和阻挡层的方法
JP5371783B2 (ja) * 2008-01-23 2013-12-18 Ｊｘ日鉱日石金属株式会社 バリア層上にルテニウム電気めっき層を有するｕｌｓｉ微細配線部材
KR101300587B1 (ko) * 2009-12-09 2013-08-28 한국전자통신연구원 반도체 소자의 제조 방법
US20110207323A1 (en) * 2010-02-25 2011-08-25 Robert Ditizio Method of forming and patterning conformal insulation layer in vias and etched structures
US20130213816A1 (en) * 2010-04-06 2013-08-22 Tel Nexx, Inc. Incorporating High-Purity Copper Deposit As Smoothing Step After Direct On-Barrier Plating To Improve Quality Of Deposited Nucleation Metal In Microscale Features
JP5996244B2 (ja) 2011-04-19 2016-09-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体上の銅のめっき
US8664126B2 (en) * 2011-06-10 2014-03-04 Applied Materials, Inc. Selective deposition of polymer films on bare silicon instead of oxide surface
US9123706B2 (en) * 2011-12-21 2015-09-01 Intel Corporation Electroless filled conductive structures
JP5925006B2 (ja) * 2012-03-26 2016-05-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US9330939B2 (en) * 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
US8791005B2 (en) 2012-06-18 2014-07-29 International Business Machines Corporation Sidewalls of electroplated copper interconnects
US20140374907A1 (en) 2012-06-21 2014-12-25 Applied Materials, Inc. Ultra-thin copper seed layer for electroplating into small features
US9029258B2 (en) 2013-02-05 2015-05-12 Lam Research Corporation Through silicon via metallization
KR102245104B1 (ko) * 2013-06-17 2021-04-26 어플라이드 머티어리얼스, 인코포레이티드 웨트 웨이퍼 백 콘택을 사용하여 실리콘 관통 비아들을 구리 도금하기 위한 방법
US20150137323A1 (en) * 2013-11-15 2015-05-21 United Microelectronics Corp. Method for fabricating through silicon via structure
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias

Also Published As

Publication number Publication date
TWI718227B (zh) 2021-02-11
US9935004B2 (en) 2018-04-03
US20170213762A1 (en) 2017-07-27
JP6903061B2 (ja) 2021-07-14
CN108474129A (zh) 2018-08-31
TW201739959A (zh) 2017-11-16
JP2019504503A (ja) 2019-02-14
CN108474129B (zh) 2020-12-25
WO2017127197A1 (en) 2017-07-27

Similar Documents

Publication Publication Date Title
US9935004B2 (en) Process and chemistry of plating of through silicon vias
KR102245104B1 (ko) 웨트 웨이퍼 백 콘택을 사용하여 실리콘 관통 비아들을 구리 도금하기 위한 방법
US7514353B2 (en) Contact metallization scheme using a barrier layer over a silicide layer
CN105845558B (zh) 穿硅通孔填充工艺
US20070099422A1 (en) Process for electroless copper deposition
EP3839103B1 (en) Cobalt filling of interconnects in microelectronics
WO2015172089A1 (en) Super conformal plating
US10883185B2 (en) Copper electrodeposition solution and process for high aspect ratio patterns
KR20160105808A (ko) 전기화학적 불활성 양이온을 함유하는 구리 전착 배쓰
KR102403843B1 (ko) 상호접속부의 코발트 충전
JP2017503929A (ja) 銅の電析
TWI638424B (zh) 利用濕式晶圓背側接觸進行銅電鍍矽穿孔的方法
TW202331009A (zh) 用於鍍銅的組合物和使用該組合物製造含銅導體的方法
KR20230146586A (ko) 전해질 및 코발트 전착 방법
TW201619445A (zh) 銅之電沉積
WO2006102182A2 (en) Process for electroless copper deposition
Dubin 3D THROUGH-SILICON VIA FILLING WITH ELECTROCHEMICAL NANOMATERIALS
TW200536965A (en) Copper plating of semiconductor devices using intermediate immersion step

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20180820

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination