CN108474129B - 电镀硅穿孔的工艺和化学作用 - Google Patents
电镀硅穿孔的工艺和化学作用 Download PDFInfo
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- CN108474129B CN108474129B CN201680079254.4A CN201680079254A CN108474129B CN 108474129 B CN108474129 B CN 108474129B CN 201680079254 A CN201680079254 A CN 201680079254A CN 108474129 B CN108474129 B CN 108474129B
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- 239000010703 silicon Substances 0.000 title claims abstract description 76
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- 230000008569 process Effects 0.000 title claims abstract description 74
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- 239000002184 metal Substances 0.000 claims abstract description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 238000000151 deposition Methods 0.000 claims abstract description 41
- 239000010949 copper Substances 0.000 claims description 54
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- 229910052802 copper Inorganic materials 0.000 claims description 46
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- 239000000463 material Substances 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 23
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
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- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- GKFJEDWZQZKYHV-UHFFFAOYSA-N borane;2-methylpropan-2-amine Chemical compound B.CC(C)(C)N GKFJEDWZQZKYHV-UHFFFAOYSA-N 0.000 description 1
- WVMHLYQJPRXKLC-UHFFFAOYSA-N borane;n,n-dimethylmethanamine Chemical compound B.CN(C)C WVMHLYQJPRXKLC-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- UWTDFICHZKXYAC-UHFFFAOYSA-N boron;oxolane Chemical compound [B].C1CCOC1 UWTDFICHZKXYAC-UHFFFAOYSA-N 0.000 description 1
- NNTOJPXOCKCMKR-UHFFFAOYSA-N boron;pyridine Chemical compound [B].C1=CC=NC=C1 NNTOJPXOCKCMKR-UHFFFAOYSA-N 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical group 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 229940011182 cobalt acetate Drugs 0.000 description 1
- 229910021446 cobalt carbonate Inorganic materials 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 1
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- ZOTKGJBKKKVBJZ-UHFFFAOYSA-L cobalt(2+);carbonate Chemical compound [Co+2].[O-]C([O-])=O ZOTKGJBKKKVBJZ-UHFFFAOYSA-L 0.000 description 1
- JECJVZVHLPZRNM-UHFFFAOYSA-J cobalt(2+);phosphonato phosphate Chemical compound [Co+2].[Co+2].[O-]P([O-])(=O)OP([O-])([O-])=O JECJVZVHLPZRNM-UHFFFAOYSA-J 0.000 description 1
- JAWGVVJVYSANRY-UHFFFAOYSA-N cobalt(3+) Chemical compound [Co+3] JAWGVVJVYSANRY-UHFFFAOYSA-N 0.000 description 1
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 description 1
- BZRRQSJJPUGBAA-UHFFFAOYSA-L cobalt(ii) bromide Chemical compound Br[Co]Br BZRRQSJJPUGBAA-UHFFFAOYSA-L 0.000 description 1
- FCEOGYWNOSBEPV-FDGPNNRMSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FCEOGYWNOSBEPV-FDGPNNRMSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- AQMRBJNRFUQADD-UHFFFAOYSA-N copper(I) sulfide Chemical compound [S-2].[Cu+].[Cu+] AQMRBJNRFUQADD-UHFFFAOYSA-N 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 150000001991 dicarboxylic acids Chemical group 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 150000002019 disulfides Chemical class 0.000 description 1
- MOTZDAYCYVMXPC-UHFFFAOYSA-N dodecyl hydrogen sulfate Chemical class CCCCCCCCCCCCOS(O)(=O)=O MOTZDAYCYVMXPC-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- ISPYRSDWRDQNSW-UHFFFAOYSA-L manganese(II) sulfate monohydrate Chemical compound O.[Mn+2].[O-]S([O-])(=O)=O ISPYRSDWRDQNSW-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910000159 nickel phosphate Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- MOOYVEVEDVVKGD-UHFFFAOYSA-N oxaldehydic acid;hydrate Chemical compound O.OC(=O)C=O MOOYVEVEDVVKGD-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HNDXKIMMSFCCFW-UHFFFAOYSA-N propane-2-sulphonic acid Chemical compound CC(C)S(O)(=O)=O HNDXKIMMSFCCFW-UHFFFAOYSA-N 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 229940045872 sodium percarbonate Drugs 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000080 stannane Inorganic materials 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 1
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OBBXFSIWZVFYJR-UHFFFAOYSA-L tin(2+);sulfate Chemical compound [Sn+2].[O-]S([O-])(=O)=O OBBXFSIWZVFYJR-UHFFFAOYSA-L 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UDBAOKKMUMKEGZ-UHFFFAOYSA-K trichloromanganese Chemical compound [Cl-].[Cl-].[Cl-].[Mn+3] UDBAOKKMUMKEGZ-UHFFFAOYSA-K 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
提供了用于处理硅基板的方法和装置。在某些实现方式中,所述方法可包含下列步骤:提供具有孔的硅基板,所述孔的底部处含有暴露的硅接触表面;在暴露的硅接触表面上沉积金属种晶层;以及通过使电流流经硅基板的背侧,将硅基板暴露于电镀工艺,以在金属种晶层上形成金属层。
Description
技术领域
此公开内容的实现方式一般而言涉及在基板上沉积材料的方法,且更具体地涉及填充具有高深宽比(aspect ratio)的特征的方法。
背景技术
多层的45nm节点金属化是用于下一代超大型集成电路(very large scaleintegration;VLSI)的关键技术之一。此技术核心所在的多层互连(multilevelinterconnect)具有高深宽比特征,包括触点(contact)、通孔(via)、线(line)及其他孔(aperture)。可靠形成这些特征对于VLSI的成功和为了增加单个基板上的品质及电路密度的持续努力而言至关重要。因此,正在作出诸多努力以形成具有20:1(高度:宽度)或更大的高深宽比的无空隙特征(void-free feature)。
铜及钨是用于填充VLSI特征的选择金属,这些特征诸如基板上的次微米高深宽比触点(high aspect ratio contacts;HARC)。可通过将诸如铜或钨等导电互连材料沉积至在两个间隔开的导电层之间所安置的绝缘材料的表面上的孔(例如,通孔)内,来形成触点。此开口的高深宽比可抑制用于填充孔的导电互连材料的沉积。尽管铜及钨为常用互连材料,但沉积这些材料的沉积工艺可能遭受在接触插塞(contact plug)内形成空隙或接缝的问题。
因此,需要一种用导电接触材料填充特征的方法,使得沉积接触材料而无空隙、接缝及其他缺陷。
发明内容
此公开内容的实现方式一般地涉及一种在基板上沉积材料的方法,且更具体地涉及填充具有高深宽比的特征的方法。在一个实现方式中,提供了一种用以在基板上沉积材料的方法。所述方法包含下列步骤:在形成于硅基板中的特征的至少一个侧壁和底表面上方沉积共形氧化物层。基板包含场区域(field region)及背侧,场区域围绕该特征,其中该特征从场区域朝向背侧延伸。所述方法还包含下列步骤:从该特征的底表面选择性地移除共形氧化物层的一部分,以暴露硅基板的一部分。所述方法还包含下列步骤:在该特征的底部处将金属种晶层沉积在硅基板的暴露的部分上。所述方法还包含下列步骤:通过使电流流经硅基板的背侧,而将硅基板暴露于电镀工艺,以在金属种晶层上形成金属层。
在一个实现方式中,所述方法包含下列步骤:在该特征的底部处将金属种晶层沉积在暴露的硅基板上之后,在氧化物层上形成共形阻挡层。
在一个实现方式中,通过使电流流经硅基板的背侧而将基板暴露于电镀工艺以在金属种晶层上形成金属层包含下列步骤:将基板的背侧暴露于湿式接触溶液(wet contactsolution),该湿式接触溶液包含氢氟酸溶液,并将种晶层暴露于含铜溶液。
在一个实现方式中,湿式接触溶液进一步包含氟化钾。
在一个实现方式中,阻挡层包含氮化钛(TiN)、氮化钨(WN)或氮化硅钨(tungsten-silicon nitride)(WSiN)。在一个实现方式中,共形氧化物层为二氧化硅层。
在一个实现方式中,金属种晶层的金属选自钴和镍。在一个实现方式中,金属种晶层的金属是由无电工艺(electroless process)所沉积的镍。在一个实现方式中,金属种晶层的金属是由无电工艺或化学气相沉积工艺所沉积的钴。在一个实现方式中,金属层包含铜。
在一个实现方式中,特征是孔(aperture),该孔选自触点(contact)、通孔(via)及线(line)。
在一个实现方式中,通过使电流流经基板的背侧而将基板暴露于电镀工艺,以在金属种晶层上形成金属层包含下列步骤:将基板的背侧暴露于氢氧化钾溶液,并将种晶层暴露于含铜溶液。
在另一个实现方式中,提供了一种用以在基板上沉积材料的方法。所述方法包含下列步骤:将氧化物层沉积在特征的至少一个侧壁和底表面上方,该特征形成于硅基板中。基板包含:场区域及背侧,场区域围绕特征,且具有氧化物层设置于场区域上,其中该特征从场区域朝向背侧延伸。所述方法进一步包含下列步骤:从该特征的底表面选择性地移除氧化物层的一部分,以暴露硅基板的部分。氧化物层的至少一部分留在所述至少一个侧壁上。所述方法进一步包含下列步骤:在特征的底部处将金属种晶层沉积在硅基板的暴露的部分上。所述方法进一步包含下列步骤:于留在至少一个侧壁上的氧化物层的部分上形成阻挡层。所述方法进一步包含下列步骤:通过使电流流经硅基板的背侧,将硅基板暴露于电镀工艺,以在金属种晶层上形成金属层。
在又一个实现方式中,提供了一种用以在基板上沉积材料的方法。所述方法包含下列步骤:将氧化物层沉积在特征的至少一个侧壁和底表面上,该特征形成于硅基板中。基板包含场区域和背侧,场区域围绕该特征,并具有氧化物层设置于场区域上,其中该特征从场区域朝向背侧延伸。所述方法进一步包含下列步骤:从特征的底表面选择性地移除氧化物层的一部分,以暴露硅基板的一部分,其中选择性地移除共形氧化物层的一部分包含下列步骤:将共形氧化物层暴露于氩系溅射蚀刻工艺(argon-based sputter etchingprocess)接着湿式蚀刻工艺。氧化物层的至少一部分留在至少一个侧壁上。所述方法进一步包含下列步骤:在特征的底部处将金属种晶层沉积在硅基板的暴露的部分上。所述方法进一步包含下列步骤:于留在至少一个侧壁上的氧化物层的部分上形成阻挡层。所述方法进一步包含下列步骤:通过使电流流经硅基板的背侧,将硅基板暴露于电镀工艺,以在金属种晶层上形成金属层。
附图说明
以上简要概述的本公开内容的上述详述特征可以被详细理解的方式,以及本公开内容的更特定描述可以通过参照实现方式来获得,一些实现方式绘示于随附图式中。然而,应注意,随附图式仅绘示出本公开内容的典型实现方式,且因此图式不应视为对本公开内容的范围的限制,因为本公开内容可允许其他等同有效的实现方式。
图1A至1H图示根据本文所述的实现方式的硅穿孔(through silicon via;TSV)制造工艺的横截面示意图;
图2图解根据本文所述的实现方式描绘了沉积工艺的流程图;
图3图示可用于执行本文所述的沉积工艺的电镀单元的横截面示意图;及
图4图示可用于执行本文所述的沉积工艺的电镀单元的另一横截面示意图。
为了促进理解,尽可能地使用相同附图标号标示附图中共通的相同元件。考虑到,一个实现方式中的元件和/或工艺操作在没有附加的描述下可有利地并入其它实现方式中。
具体实施方式
此公开内容的实现方式一般地涉及在基板上沉积材料的方法,且更具体地涉及填充具有高深宽比的特征的方法。本文所述的实现方式特别有利于硅穿孔(through siliconvia;TSV)应用。本文所述的方法的实现方式也适合用于在标准基板上的电镀应用。TSV应用包括完全穿过硅基板的电气连接,诸如在3D封装及3D集成电路中。TSV应用通常包括安置于彼此上的多个集成电路。举例而言,3D集成电路可包括彼此垂直堆叠的多个硅基板。
本文所述的某些实现方式涉及TSV的铜电镀。常规电镀工艺不足以用于在高深宽比(如,AR~20-50)TSV中电镀铜,这是因为初沉积的铜材料缺乏共形性。为了部分改善铜电镀共形性并激发自下而上的电镀(bottom-up plating),通常将各种添加剂添加到铜电镀化学品中。然而,此类添加剂的添加急剧减小了电镀速率。因此,希望用具有最少添加剂的简单含铜化学品来电镀,从而最大化铜电镀速率。
在本文所述的某些实现方式中,使用湿式晶片背侧接触的自下而上的通孔电镀方法可用于实现高电镀速率下的共形铜沉积。在某些实现方式中,可将金属薄膜或银膏涂覆于基板的背侧,以允许电流流过基板。然而,使用银膏或金属薄膜增加了工艺复杂性。
可在分别耦接至整合处理工具(诸如群集工具)或作为整合处理工具的一部分的单个腔室中执行本文所描述的方法及结构。整合工具的实例包括及整合工具,两者皆可购自美国加州圣大克劳拉市的应用材料公司。在一个实现方式中,群集工具可具有处理腔室,处理腔室可经配置以执行众多基板处理操作,诸如循环层沉积、化学气相沉积(CVD)、物理气相沉积(PVD)、原子层沉积(ALD)、蚀刻、预清洁、脱气、退火、定向及其它基板工艺。
图1A至1H图示在基板100上执行处理序列200的各个处理操作(图2)时的特征102的横截面示意图。于操作210,在基板100中形成特征102,如图1A所描绘。图1A图示基板100的横截面图,基板100具有场区域105、背侧106及特征102,特征102被形成进入基板100的表面。特征具有开口107。可由至少一个侧壁108和底表面110界定特征102。在某些实现方式中,底表面110可为暴露的硅或含硅表面(例如,单晶硅表面)。在某些实现方式中,底表面110可为暴露的锗或含锗表面。在某些实现方式中,可由基板100的暴露表面界定底表面110。
特征102可包括具有5:1或大于5:1(例如,6:1或大于6:1、7:1或大于7:1、8:1或大于8:1、9:1或大于9:1、10:1或大于10:1、11:1或大于11:1、12:1或大于12:1、16:1或大于16:1、或约10:1至约20:1、或在约30:1至约50:1的范围内;或在约70:1至约100:1的范围内的深宽比)的高的高对宽深宽比(裸孔的高度除以所述孔的宽度的比率)的特征。示例性特征界定包括通孔、沟槽、间隙、线、触点孔(contact-hole)、穿孔(through-hole),或在半导体、太阳能或其它电子器件中所用的其它特征界定,如高比率触点插塞(contact plug)。特征102可包括孔,如触点孔、通孔(via)或沟槽(trench)。在孔为通孔的某些实现方式中,所述通孔具有高深宽比(例如,AR~20-50)。
可使用反应性离子蚀刻技术或其它各向异性(anisotropic)蚀刻技术来形成特征102。在一个实现方式中,可将蚀刻气体的等离子体或离子束导向基板100,以形成特征102。蚀刻气体可包括SF6、C3F8、CF4、BF3、BI3、N2、Ar、PH3、AsH3、B2H6、H2、Xe、Kr、Ne、He、SiH4、SiF4、GeH4、GeF4、CH4、AsF5、PF3、PF5或前述气体的组合。在一个实现方式中,可对基板100进行溅射蚀刻,以形成特征102。可用氩等离子体进行溅射蚀刻。在一个实现方式中,可使用电压偏压大于8kV的等离子体注入工具来形成特征102。
基板100可包含半导体材料,诸如(例如)硅、锗或硅锗。可使用常规光刻及蚀刻技术在基板100中形成特征102。在某些实现方式中,可使用脉冲或时间多工蚀刻工艺(诸如Bosch工艺)来形成特征102。
在某些实现方式中,如图1A所描绘,可在形成特征102之前,在场区域105上形成氧化物层112。氧化物层112可为厚度范围在约与约之间的薄氧化物层。氧化物层112可为含氧的硅层(例如,SiO2、SiO)。可通过将基板100暴露于净化工艺,在场区域105上形成氧化物层112。在某些实现方式中,任选的净化工艺可包含:将基板100暴露于标准清洁1(Standard Clean-1)(“SC-1”)化学品(例如,NH4OH(氢氧化铵)+H2O2(过氧化氢)+H2O(水)的1:1:5溶液,在75或80摄氏度下,通常达10分钟)。任选的净化工艺可进一步包含以下至少一种:暴露于含氢氟酸溶液及标准清洁2(“SC-2”)化学品(例如,HCl+H2O2+H2O的1:1:6溶液,在75或80摄氏度下)。在某些实现方式中,可使用诸如化学气相沉积(CVD)等沉积技术将氧化物层112形成于场区域105上。
于操作220,如图1B所描绘,可在氧化物层112、特征102的底表面110及特征102的至少一个侧壁108上形成氧化物层120。氧化物层120可为共形氧化物层。在至少一个侧壁108上的氧化物层120可比在底表面110上的氧化物层120更厚。氧化物层120所具有的厚度可在约与约之间的范围(例如,约与约之间;与约之间;与约; 与约之间)。在一个实现方式中,在至少一个侧壁108上的氧化物层120的部分自约至约,且在底表面110上的氧化物层120的部分自约至约。
氧化物层120可为含氧的硅层(例如,SiO2、SiO)。氧化物层120可为含氧化硅或含二氧化硅层。氧化硅或二氧化硅层可用作绝缘层。可使用CVD工艺来沉积氧化硅或二氧化硅层。二氧化硅可源自四乙氧基硅烷(tetraethyl orthosilicate;TEOS)。
在一个实现方式中,可使用低温CVD工艺(例如,约250摄氏度至约300摄氏度的温度范围)来沉积氧化物层120。在一个实现方式中,可由带有低偏压的PVD来沉积氧化物层120。
于操作230,如图1C所描绘,从特征102的底表面110移除氧化物层120的一部分,以暴露基板100。在操作230期间,可从场区域105移除氧化物层120的一部分,以暴露氧化物层112。可使用蚀刻工艺(例如,反应性离子蚀刻工艺或溅射蚀刻工艺)从底表面110和场区域105移除氧化物层120。在某些实现方式中,可方向性地蚀刻(directionally etch)氧化物层120的暴露的表面,以从特征102的底表面110移除氧化物层120而暴露基板100的硅材料。在方向性蚀刻工艺期间,基板100的场区域105上的氧化物层112可被薄化或完全移除。
箭头124'表示由处理期间基板的基板表面附近产生的电场所造成的气体离子移动的方向,这导致氩气体在方向性蚀刻工艺期间撞击氧化物层120的顶部(平坦)表面。箭头124”以类似方式显示特征102的底表面110处的气体离子移动的方向。沿着至少一个侧壁108的氧化物层120可以被薄化,但是基本上不受蚀刻工艺的影响,且因此沉积在至少一个侧壁108上的氧化物层120在蚀刻工艺完成之后可保持完整。尽管在操作230期间,至少一个侧壁108上的氧化物层120可被薄化,但是该氧化物层120不会被去除。虽然剩余的经薄化氧化物层120可提供导电路径,但是经薄化氧化物层120的电阻通常非常高,且因此在场区域105和/或至少一个侧壁108上不会有大量的电镀,因而提供了自下而上的填充(bottom-upfill)。沿着至少一个侧壁108及场区域105的氧化物层120可防止铜或镍电镀在至少一个侧壁108和场区域105上。电镀发生在形成有金属种晶层130的特征102的底部110处。
在蚀刻工艺为溅射蚀刻工艺的实现方式中,工艺可为带有高偏压的氩系溅射蚀刻工艺,所述工艺是方向性的并且主要蚀刻来自场区域105的氧化物和来自底表面110的氧化物。在某些实现方式中,在蚀刻工艺之后,可由湿式蚀刻工艺移除底表面110上的任何残存氧化物。可使用湿式蚀刻溶液来进行湿式蚀刻工艺,湿式蚀刻溶液包括2%的H2O2+3%的氢氟酸在80%的乙酸溶液(15%的DI水)中。
于操作240,如图1D所描绘,于特征102的底表面110处将金属种晶层130沉积于暴露的硅上。可使用物理气相沉积(PVD)、化学气相沉积(CVD)、电镀沉积、无电沉积(electroless deposition)或原子层沉积(ALD)等沉积工艺将金属种晶层130沉积于底表面110上。在某些实现方式中,可在与阻挡层沉积工艺(如下文所述)相同的沉积腔室中执行金属种晶层130沉积工艺。在某些实现方式中,金属种晶层130可为铜(Cu)层、钌(Ru)层、钯(Pd)层、镍(Ni)层、钴(Co)层,或为含有一或多种这些元素的合金的层。在某些实现方式中,金属种晶层130的厚度在约10nm至约250nm的范围内。在某些实现方式中,金属种晶层130的厚度在约100nm至约200nm的范围内。
在某些实现方式中,当金属种晶层130为镍层,可使用无电电镀工艺来沉积该镍层。硅表面的制备可包括氢氟酸蚀刻及SC-1浸镀(dip)中的至少一者,以再生长化学氧化物,据信此化学氧化物可产生较佳的附着性。无电镍电镀溶液可包含镍源(例如,NiSO4)、还原剂(例如,NH4OH)及DI水。还原剂有助于将无电镍电镀溶液维持在大于8的pH值。在特征102的底部110处暴露的硅可用作还原剂。无电电镀溶液可具有自约5至约6的pH值。可在95摄氏度或更高的温度下进行无电镍沉积工艺,并可带有任选的搅动,如突刺搅拌(impalement stirring)或超声处理(sonication)。
在一个实现方式中,无电镍-电镀工艺为镍位移工艺(nickel displacementprocess)。在一个实现方式中,无电镍电镀溶液包括将0.5M的NiSO4加入100ml的水中,并将此混合物加热至90摄氏度以上。接着将200ml的30%NH4OH加入此混合物。将混合物的温度维持在70摄氏度。将基板100浸没在电镀溶液中达约20分钟,接着以DI水清洗并以N2干燥。
于操作250,如图1E所描绘,任选地,可将金属种晶层130退火,以在特征102的底表面110处形成金属硅化物层。金属硅化物层可包含金属晶种层130的至少一部分及含硅基板100的至少一部分。示例性退火工艺包括热退火工艺(例如,RTP)、激光退火工艺(诸如毫秒退火工艺、纳秒退火工艺及微秒退火工艺)及闪光灯退火工艺。可通过在自约400摄氏度至低于1,200摄氏度的范围内的温度下退火,来形成金属硅化物层。可通过在自约700摄氏度至低于1,000摄氏度的范围内的温度下退火,来形成金属硅化物层。
于操作260,任选地,为了防止铜扩散进入基板100,可在特征102的剩余氧化物层120上形成阻挡层140,如图1G所示。阻挡层140可为共形层或非共形层。可使用合适的沉积工艺形成阻挡层140,沉积工艺可包括原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)或前述工艺的组合。可由ALD或CVD工艺形成共形阻挡层。可由PVD工艺形成非共形阻挡层。在一个实现方式中,可由带有低偏压PVD工艺来沉积阻挡层140。在一个实现方式中,可由群集工具的腔室来形成阻挡层140。在一个实现方式中,可将基板100置入等离子体增强ALD(PE-ALD)、等离子体增强CVD(PE-CVD)或高密度等离子体CVD(HDP-CVD)腔室,如可购自位于加州圣克拉拉市的应用材料公司的ULTIMA HDP-CVDTM、Centura iSprintTM或Endura iLBTM系统。
在一个实现方式中,可使用物理气相沉积(PVD)、化学气相沉积(CVD)或原子层沉积(ALD)等沉积工艺来形成阻挡层140。阻挡层140可为单一沉积层或多重沉积层,阻挡层140可含有钌(Ru)、钛(Ti)、氮化钛(TiN)、钨(W)、氮化钨(WN)、氮化硅钨(WSiN)、钽(Ta)、氮化钽(TaN)或含有这些材料的其它合金。在某些实现方式中,单一沉积层或多重沉积层堆叠可含有氧化物层。在某些实现方式中,氧化物层可为氧化物层120。氧化物层可为含氧化硅层或含二氧化硅层。氧化硅或二氧化硅层可作为绝缘层。可使用CVD工艺来沉积氧化硅或二氧化硅层。在一个实现方式中,多重沉积层堆叠可具有第一层和第二层,所述第一层含有二氧化硅,且所述第二层含有TiN。二氧化硅可源自四乙氧基硅烷(TEOS)。在某些实现方式中,阻挡层140的厚度可自约至约(例如,自约至约;自约至约)。
于氧化物层112存在的某些实现方式中,可将阻挡层140沉积在氧化物层112上方。于氧化物层112不存在的某些实现方式中,可将阻挡层140直接沉积在场区域105上。
于操作270,如图1F和图1H所描绘,通过使电流流经基板100的背侧106的电镀工艺,用金属层150自下而上填充特征102。在某些实现方式中,较佳地自特征102底部处的金属种晶层130开始填充特征102,直至该层与场区域105大致齐平(例如,自下而上填充)。在某些实现方式中,金属层150可为铜(Cu)层、钴(Co)层、镍(Ni)层、银(Ag)层或含有这些元素中的一或多者的合金层。在某些实现方式中,可使用多层填充工艺来填充特征102,在多层填充工艺中依序沉积两层或更多的层来填充特征102。下文参照图3和图4描述示例性自下而上填充电镀工艺。一般而言,可使用电镀沉积溶液来沉积金属层150,电镀沉积溶液含有一或多个金属离子源,以容许含有一或多种金属的层的沉积。在一个实现方式中,金属离子之一为铜离子,而其它金属离子可选自由以下组成的群组中的金属:铝(Al)、铟(In)、钼(Mo)、钨(W)、锰(Mn)、钴(Co)、锡(Sn)、镍(Ni)、镁(Mg)、铼(Re)、铍(Be)、磷(P)、硼(B)、镓(Ga)或钌(Ru)。在某些实现方式中,可使用自约0.5安培至2安培的电流。在某些实现方式中,沉积偏压大体上具有自约0.0005A/cm2至约0.01A/cm2或更小的电流密度。
在处理序列200的某些实现方式中,可通过材料移除工艺的使用而从场区域105移除氧化物层112,所述材料移除工艺诸如电化学工艺或化学机械抛光工艺(CMP)。在某些实现方式中,可在操作230的工艺期间从场区域105移除氧化物层120。在某些实现方式中,此工艺操作可包括:在进行金属层150的沉积之后,移除任何过量电镀残余物的工艺。也可将基板100暴露于清洁工艺,以移除任何电镀溶液和/或湿式接触溶液。清洁工艺可包含旋转(spin)、清洗及干燥中的至少一者。
图3图示可用于进行本文所述的沉积工艺的电镀单元300的横截面示意图。图4图示可用于进行本文所述的沉积工艺的电镀单元300的另一横截面示意图。除了所使用的湿式接触溶液之外,图3的电镀单元300和图4的电镀单元300相同。亦应理解,图3及图4中所描绘的湿式接触溶液为示例性的。电镀单元300包含湿式接触溶液隔室310及电镀溶液隔室320,而基板100位于湿式接触溶液隔室310与电镀溶液隔室320之间。尽管图3中所描绘的电镀单元300具有垂直定向(即,基板具有垂直定向),但亦应理解,电镀单元300可具有水平定向,其中将湿式接触溶液隔室310安置于电镀溶液隔室320下方。
可溶性阳极330可安置于电镀溶液隔室320内。可溶性阳极330通常包含待电镀于基板100上的材料。举例而言,在将铜电镀至基板100上的某些实现方式中,可溶性阳极330包含铜并将铜离子供应至电镀溶液隔室320中的电镀溶液。
不溶性电极340位于湿式接触溶液隔室内。不溶性电极340通常包含相对于湿式接触溶液隔室内的工艺化学品而言为惰性的材料。在某些实现方式中,不溶性电极340包含掺杂硼的碳(boron doped carbon;BDC)。
可将电镀单元300耦接电源360,以供应电力至电镀单元300的各个隔室。电源360可为RF或DC源。电源360可与控制器370耦接。控制器370可与电镀单元300耦接,以控制电镀单元300的操作。控制器370可包括一或多个微处理器、微电脑、微控制器、专用硬件或逻辑及它们的组合。
可将电镀溶液隔室320与第一流体供应器364耦接,以将预混合的电镀溶液,或将用于形成电镀溶液的前驱物供应至电镀溶液隔室320。可将湿式接触溶液隔室310与第二流体供应器366耦接,以将湿式接触溶液及任何额外的添加剂供应至湿式接触溶液隔室310。
在某些实现方式中,湿式接触溶液包含导电溶液,该导电溶液能够将电流传递至基板100的背侧106。在某些实现方式中,湿式接触溶液包含电解质。在某些实现方式中,湿式接触溶液包含导电酸(conductive acid)。据信,导电酸可自基板100的背侧106移除硅,并提供晶片与电极之间的电流。一种示例性导电酸为氢氟酸。氢氟酸可来自约10%(w/w)水性溶液至约49%(w/w)水性溶液。为了增加溶液的导电率,湿式接触溶液可包含额外的盐类。示例性的额外盐类包括氟化钾。在一个实现方式中,湿式接触溶液包含氢氟酸溶液、水性溶液(49%)及氟化钾。
在某些实现方式中,湿式接触溶液包含导电碱(conductive base)。在某些实现方式中,导电碱为氢氧化钾(KOH)。诸如KOH之类的导电碱通常不会引发多孔硅形成,并显示出对于111晶向的硅的低蚀刻速率(/min)。诸如KOH之类的导电碱也可在升高的温度下用足以提供湿式接触的~15A/分钟下蚀刻SiO2。实验结果证实了在KOH系湿式接触溶液情况下随时间变化改良的电镀电流稳定性。据信,使用导电碱(例如,KOH)可避免当使用导电酸时,因为在基板100的背侧106上形成多孔硅而导致的电镀电流损失。
电镀溶液:
在一个实现方式中,电镀溶液含有金属离子源及至少一或更多种酸性溶液。在某些实现方式中,电镀溶液是带电电镀溶液。在其他实现方式中,电镀溶液是无电电镀溶液。适宜的酸性溶液,例如,可包括无机酸,诸如硫酸、磷酸、焦磷酸、盐酸、高氯酸、乙酸、柠檬酸、上述的组合,以及包括上述的铵及钾盐的酸性电解质衍生物。
在某些实现方式中,电镀溶液内的金属离子源是铜离子源。可用铜源包括硫酸铜(CuSO4)、硫化铜(I)(Cu2S)、硫化铜(II)(CuS)、氯化铜(I)(CuCl)、氯化铜(II)(CuCl2)、醋酸铜(Cu(CO2CH3)2)、焦磷酸铜(Cu2P2O7)、氟硼酸铜(Cu(BF4)2)、醋酸铜((CH3CO2)2Cu)、乙酰基丙酮酸铜((C5H7O2)2Cu)、磷酸铜、硝酸铜、碳酸铜、氨基磺酸铜、磺酸铜、焦磷酸铜、氰化铜、上述的衍生物、上述的水合物或它们的组合。一些铜源通常可用作水合物衍生物,诸如CuSO45H2O、CuCl22H2O及(CH3CO2)2CuH2O。电解质组成亦可基于碱性铜电镀浴(例如,氰化物、甘油、氨等)。在一个实现方式中,电解质中的铜离子浓度可为自约0.1M至约1.1M的范围。在一个实现方式中,电解质中的铜离子浓度可为自约0.4M至约0.9M的范围。
在一个实现方式中,电镀溶液可为无添加剂的(additive-free)电镀溶液。在一个实现方式中,无添加剂的电镀溶液仅含有硫酸铜。
任选地,电镀溶液可包括一或多种添加剂化合物。在某些实现方式中,电镀溶液含有氧化剂。如本文所使用,氧化剂可用于将金属层氧化成对应氧化物,例如将铜氧化成氧化铜。适宜的氧化剂的实例包括过氧化合物(例如,可经由羟自由基分解的化合物,诸如过氧化氢及其加合物,包括尿素过氧化氢(urea hydrogen peroxide))、过碳酸盐及有机过氧化物(包括,例如,烷基过氧化物、环或芳基过氧化物、过氧化苯甲酰、过乙酸及二叔丁基过氧化物(di-t-butyl peroxide))。亦可使用硫酸盐及硫酸盐衍生物(诸如单过硫酸盐及二过氧硫酸盐),包括例如过二硫酸铵、过二硫酸钾、过硫酸铵及过硫酸钾。亦可使用过氧化合物的盐,诸如过碳酸钠及过氧化钠。在某些实现方式中,氧化剂可以范围介于约0.001体积或重量%与约90体积或重量%之间的量存在于电镀溶液中。在另一实现方式中,氧化剂可以范围介于约0.01体积或重量%与约20体积或重量%之间的量存在于电镀溶液中。在又一实现方式中,氧化剂可以范围介于约0.1体积或重量%与约15体积或重量%之间的量存在于电镀溶液中。
在某些实现方式中,期望添加低成本的pH调节剂(诸如氢氧化钾(KOH)或氢氧化钠(NaOH)),以形成具有理想的pH值的便宜电解质,来降低形成能量装置的所有权的成本。在某些实现方式中,期望使用氢氧化四甲铵(tetramethylammonium hydroxide;TMAH)来调节pH。
在某些实现方式中,可能期望将第二金属离子添加至含有第一金属离子的电解质浴(例如,含有铜离子的浴)中,这些金属离子将析出(plate out)或被并入生长中的电化学沉积层中或电化学沉积层的颗粒边界(grain boundary)上。形成含有一定百分比的第二元素的金属层可用于减小所形成层的本质应力和/或改良所形成层的电气及电迁移特性。在一个实现方式中,电解质溶液内的金属离子源是选自一群组的离子源,该群组包含银、锡、锌、钴、镍离子源及上述的组合。在一个实现方式中,电解质中的银(Ag)、锡(Sn)、锌(Zn)、钴(Co)或镍(Ni)离子的浓度可在自约0.1M至约0.4M的范围内。
适宜的镍源的实例包括硫酸镍、氯化镍、醋酸镍、磷酸镍、上述的衍生物、上述的水合物或它们的组合。
适宜的锡源的实例包括可溶锡化合物。可溶锡化合物可为四价锡盐或二价锡盐。四价锡盐或二价锡盐可为硫酸、烷磺酸(alkane sulfonate)或烷醇磺酸(alkanolsulfonate)。举例而言,浴可溶锡化合物可为具有如下化学式的一或多种二价锡烷磺酸盐:
(RSO3)2Sn
其中R是包括一个至十二个碳原子的烷基。二价锡烷磺酸可为具有如下化学式的二价锡甲烷磺酸:
且浴可溶锡化合物亦可为具有如下化学式的硫酸锡:SnSO4。
可溶锡化合物的实例亦可包括有机磺酸(诸如甲磺酸、乙磺酸、2-丙磺酸、对-苯酚磺酸及类似者)的锡(II)盐、氟硼化锡(II)、磺基琥珀酸锡(II)、硫酸锡(II)、氧化锡(II)、氯化锡(II)等等。可单独使用或以两种或更多种的组合使用这些可溶锡(II)化合物。
适宜的钴源的实例可包括钴盐,钴盐可选自:硫酸钴、硝酸钴、氯化钴、溴化钴、碳酸钴、醋酸钴、乙二胺四乙酸钴(ethylene diamine tetraacetic acid cobalt)、乙酰丙酮酸钴(II)、乙酰丙酮酸钴(III)、甘氨酸钴(III)、焦磷酸钴及上述的组合。
电镀溶液亦可含有浓度在约20ppm至约600ppm的范围内的锰或铁。在另一实现方式中,电镀溶液可含有浓度处于自约100ppm至约400ppm的范围内的锰或铁。可能的铁源可包括氯化铁(II)(FeCl2)(包括水合物)、氯化铁(III)(FeCl3)、氧化铁(II)(FeO)、氧化铁(II,III)(Fe3O4)及氧化铁(III)(Fe2O3)。可能的锰源可包括氧化锰(IV)(MnO2)、硫酸锰(II)单水合物(MnSO4·H2O)、氯化锰(II)(MnCl2)、氯化锰(III)(MnCl3)、氟化锰(MnF4)及磷酸锰(Mn3(PO4)2)。
在某些实现方式中,电镀溶液可含有游离铜离子以替代铜源化合物及络合铜离子。
在某些实现方式中,电镀溶液亦可包含至少一种络合剂或螯合剂以与铜离子形成络合物,同时在沉积工艺期间提供稳定性及控制。络合剂亦提供对于无电铜溶液的缓冲特征。络合剂大体上具有诸如羧酸、二羧酸、多聚羧酸、氨基酸、胺、二胺或多元胺的官能基。针对无电铜溶液的可用络合剂的特定实例可包括乙二胺四乙酸(ethylene diaminetetraacetic acid;EDTA)、乙二胺(ethylene diamine;EDA)、柠檬酸、柠檬酸盐、乙醛酸盐、甘氨酸、氨基酸、上述的衍生物、上述的盐或它们的组合。在一个实现方式中,电镀溶液可具有浓度在约50mM至约500mM范围内的络合剂。在另一实现方式中,电镀溶液可具有浓度在约75mM至约400mM范围内的络合剂。在又一实现方式中,电镀溶液可具有浓度在约100mM至约300mM范围内(诸如约200mM)的络合剂。在一个实现方式中,将EDTA源用作电镀溶液内的络合剂。在一个实例中,电镀溶液含有约205mM的EDTA源。EDTA源可包括EDTA、乙二胺四乙酸(ethylenediaminetetraacetate)、上述的盐、上述的衍生物或它们的组合。
在某些实现方式中,电镀溶液含有至少一种还原剂。还原剂提供电子,以如本文所描述般在形成和沉积铜材料的同时诱发铜离子的化学还原。还原剂可包括有机还原剂(例如,乙醛酸或甲醛)、联胺(hydrazine)、有机联胺(例如,甲基联胺)、次磷酸盐源(例如,次磷酸(H3PO2)、次磷酸铵((NH4)4-xHxPO2)或上述的盐)、硼烷源(例如,二甲胺硼烷络合物(dimethylamine borane)((CH3)2NHBH3),DMAB)、三甲胺硼烷络合物(trimethylamineborane)((CH3)3NBH3),TMAB)、叔丁胺硼烷络合物(tBuNH2BH3)、四氢呋喃硼烷络合物(THFBH3)、吡啶硼烷络合物(C5H5NBH3)、氨硼烷络合物(NH3BH3)、硼烷(BH3)、二硼烷(B2H6))、上述的衍生物、上述的络合物、上述的水合物或它们的组合。在一个实现方式中,电镀溶液可具有浓度在约20mM至约500mM范围内的还原剂。在另一实现方式中,电镀溶液可具有浓度在约100mM至约400mM范围内的还原剂。在又一实现方式中,电镀溶液可具有浓度在约150mM至约300mM范围内(诸如约220mM)的还原剂。较佳地,在电镀溶液内使用有机还原剂或含有有机物的还原剂,诸如乙醛酸或乙醛酸源。乙醛酸源可包括乙醛酸、乙醛酸盐、上述的盐、上述的络合物、上述的衍生物或它们的组合。在一个实例中,在无电铜溶液内含有约217mM浓度的乙醛酸单水合物(glyoxylic acid monohydrate)(HCOCO2H·H2O)。
电镀溶液可含有其他添加剂,这些添加剂可例如为均匀剂(leveler)、抑制剂(inhibitor)、遏止剂(suppressor)、增亮剂(brightener)、加速剂(accelerator)或本案所属技术领域中已知的其它添加剂,这些添加剂通常为吸附于正在电镀的基板表面上的有机材料。可用的遏止剂通常包括聚醚,诸如聚乙烯、乙二醇或其他聚合物(诸如聚氧化丙烯),遏止剂可吸附于基板表面上,从而减缓所吸附区域内的铜沉积。可用的加速剂通常包括硫化物或二硫化物,诸如双(3-磺丙基)二硫化物,加速剂可与遏止剂竞争吸附位点(adsorption site),从而加速所吸附区域内的铜沉积。可用的抑制剂通常包括苯甲酸钠及亚硫酸钠,抑制剂可抑制基板上的铜沉积的速率。在电镀期间,在基板表面处消耗添加剂,但由电镀溶液不断补充这些添加剂。然而,各种添加剂的扩散速率的差异在特征的顶部及底部处产生不同表面浓度,因而产生特征中的不同电镀速率。理想情况下,对于自下而上的填充而言,特征的底部处的所述电镀速率应较高。因此,可使用电镀溶液中的添加剂的适宜组成实现特征的无空隙填充。
电镀溶液也可具有表面活性剂。表面活性剂充当湿润剂以减小含铜溶液与基板表面之间的表面张力。在一个实现方式中,电镀溶液大体上含有浓度约1,000ppm或低于1,000ppm的表面活性剂。在另一实现方式中,电镀溶液大体上含有约500ppm或低于500ppm浓度的表面活性剂,该浓度诸如在约100ppm至约300ppm范围内。表面活性剂可具有离子或非离子特征。示例性表面活性剂可包括乙二醇醚系表面活性剂,诸如聚乙二醇(polyethyleneglycol;PEG)、聚丙二醇(polypropylene glycol;PPG)等等。由于具有有益特性,可将PEG及PPG用作表面活性剂、抑制剂和/或遏止剂。在一个实例中,乙二醇醚系表面活性剂可含有聚氧化乙烯单元(polyoxyethylene unit),诸如可购自陶氏化学公司的100。可在无电铜溶液内使用的其它表面活性剂包括十二烷基硫酸盐,诸如十二烷基硫酸钠(sodium dodecyl sulfate;SDS)。表面活性剂可为单一化合物或具有含不同长度烃链的分子的化合物的混合物。
上文所描述的电镀溶液的余量(balance)或剩余物可为溶剂,诸如极性溶剂(包括水(诸如去离子水))及有机溶剂(例如,乙醇或乙二醇)。
在一个实现方式中,电镀溶液包含220g/L的CuSO4、27ml/L的H2SO4、一滴HCl及剩余为DI水,总共1L。
实例
以下非限制性实例进一步阐述本文所述的实现方式。然而,这些实例并不意欲包括全部也非意欲限制本文所述的实现方式的范围。
实例1:
将量测为8×8cm的硅试片暴露于无电镍电镀溶液。通过将0.5M的NiSO4加入100ml的水,并将该混合物加热至大于90摄氏度来形成镍电镀溶液。接着将200ml的30%NH4OH加入该混合物。将混合物的温度维持在70摄氏度。将基板100浸没于无电电镀溶液中达将近20分钟,接着以DI水清洗并以N2干燥。
在类似于图3中的电镀单元300的电镀单元中安置量测的硅试片。将硅试片的前侧暴露于电镀溶液,该电镀溶液包含220g/L的CuSO4、27ml/L的H2SO4、一滴HCl及剩余为DI水,总共1L。将硅试片的背侧暴露于湿式接触溶液,该湿式接触溶液包含氢氟酸溶液、水性溶液(49%)及氟化钾。施加0.005安培/平方厘米(A/cm2)的电流密度及介于1.24至1.3伏特之间的电位,持续约四分钟的时间。在硅试片上成功沉积薄铜层,证实了可使用湿式背侧接触在硅上电镀铜。
综上所述,本公开内容的某些实现方式的某些益处提供了用导电接触材料填充特征的方法,使得所沉积的接触材料没有空隙、接缝和其它缺陷。本文所述的改良方法对于填充高深宽比特征特别有利。本文所述的实现方式特别有利于硅穿孔(TSV)应用。在某些实现方式中,为了最大化铜电镀速率,可通过自下而上的电镀用含有最少添加剂的简单含铜化学物来达成无缺陷沉积。在本文所述的某些实现方式中,使用湿式晶片背侧接触的自下而上的通孔电镀方法可用来达成高电镀速率的共形铜沉积。如本文所用,“基板”可以是上面形成有或未形成层的支撑基板。图案化基板可以是绝缘体或各种掺杂浓度和分布的半导体,且可为,例如,在集成电路制造中使用的半导体基板类型。图案化基板的暴露的“硅(silicon)”主要是Si,但可包括少量浓度的其它元素组分,如氮、氧、氢、碳等等。图案化基板的暴露的“氮化硅(silicon nitride)”主要是Si3N4,但可包括少量浓度的其它元素组分,如氧、氢、碳等等。图案化基板的暴露的“氧化硅(silicon oxide)”主要是SiO2,但可包括少量浓度的其它元素组分,如氮、氢、碳等等。
随着诸多实现方式的公开,本案所属技术领域中技术人员将认识到,在不脱离所公开的实现方式的精神的情况下,可以使用各种修改,替代构造和等效形式。另外,许多已知工艺和元件没有被描述,以避免不必要地模糊本公开内容。因此,前文的描述不应视为对本公开内容的范围的限制。
当介绍本公开内容或示例性态样或(数个)实现方式的元件时,冠词“一(a、an)”和“该(the、said)”意味着有一个或多个该元件。
术语“包含(comprising)”、“包括(including)”和“具有(having)”意欲为包括性的,并且表示可以存在除所列出的元件之外的附加元件。
除非另有说明,所有的量、比率、比例和其它测量都是以重量计。除非另有说明,所有百分比是指基于根据本公开内容的实施的总组分的重量百分比。
尽管前述内容针对本公开内容的实现方式,但是在不脱离本公开内容的基本范围的情况下可以设计本公开内容的其它和进一步的实现方式,并且本公开内容的范围由随附的权利要求书来确定。
Claims (18)
1.一种用以在基板上沉积材料的方法,包含下列步骤:
将共形氧化物层沉积在特征的至少一个侧壁和底表面上方,所述特征形成于硅基板中,其中所述硅基板包含:
场区域,所述场区域围绕所述特征;和
背侧,其中所述特征从所述场区域朝向所述背侧延伸;
从所述特征的所述底表面选择性地移除所述共形氧化物层的一部分,以暴露所述硅基板的一部分;
在所述特征的底表面处将金属种晶层沉积在所述硅基板的暴露的部分上;
在所述特征的底表面处将所述金属种晶层沉积在所述硅基板的暴露的部分上之后,在所述共形氧化物层上形成共形阻挡层;和
通过使电流流经所述硅基板的所述背侧,将所述硅基板暴露于电镀工艺,以在所述金属种晶层上形成金属层。
2.如权利要求1所述的方法,其中通过使所述电流流经所述硅基板的所述背侧而将所述硅基板暴露于所述电镀工艺以在所述金属种晶层上形成所述金属层包含下列步骤:将所述硅基板的所述背侧暴露于湿式接触溶液,所述湿式接触溶液包含氢氟酸溶液,并将所述金属种晶层暴露于含铜溶液。
3.如权利要求2所述的方法,其中所述湿式接触溶液进一步包含氟化钾。
4.如权利要求1所述的方法,其中所述共形阻挡层包含氮化钛(TiN)、氮化钨(WN)或氮化硅钨(WSiN)。
5.如权利要求4所述的方法,其中所述共形氧化物层是二氧化硅层。
6.如权利要求1所述的方法,其中所述金属种晶层的金属选自钴及镍。
7.如权利要求6所述的方法,其中所述金属种晶层的金属是由无电工艺所沉积的镍。
8.如权利要求6所述的方法,其中所述金属种晶层的金属是由无电工艺或化学气相沉积工艺所沉积的钴。
9.如权利要求1所述的方法,其中所述金属层包含铜。
10.如权利要求1所述的方法,其中所述特征是孔,所述孔选自触点、通孔及线。
11.如权利要求1所述的方法,其中通过使所述电流流经所述硅基板的所述背侧而将所述硅基板暴露于所述电镀工艺以在所述金属种晶层上形成所述金属层包含下列步骤:将所述硅基板的所述背侧暴露于氢氧化钾溶液,并将所述金属种晶层暴露于含铜溶液。
12.一种用以在基板上沉积材料的方法,包含下列步骤:
将氧化物层沉积在特征的至少一个侧壁和底表面上方,所述特征形成于硅基板中,其中所述硅基板包含:
场区域,所述场区域围绕所述特征,并且具有所述氧化物层设置于所述场区域上;和
背侧,其中所述特征从所述场区域朝向所述背侧延伸;
从所述特征的所述底表面选择性地移除所述氧化物层的一部分,以暴露所述硅基板的一部分,其中所述氧化物层的至少一部分留在所述至少一个侧壁上;
在所述特征的底表面处将金属种晶层沉积在所述硅基板的暴露部分上;
于留在所述至少一个侧壁上的所述氧化物层的部分上形成阻挡层;和
将所述硅基板暴露于电镀工艺,包含下列步骤:
将所述硅基板的所述背侧暴露于氢氧化钾溶液,并将所述金属种晶层暴露于含铜溶液;和
使电流流经所述硅基板的所述背侧,以在所述金属种晶层上形成金属层。
13.如权利要求12所述的方法,其中所述阻挡层包含氮化钛(TiN)、氮化钨(WN)或氮化硅钨(WSiN)。
14.如权利要求13所述的方法,其中将所述硅基板暴露于所述电镀工艺包含下列步骤:将所述硅基板的所述背侧暴露于湿式接触溶液,所述湿式接触溶液包含氢氟酸溶液,并将所述金属种晶层暴露于含铜溶液。
15.如权利要求12所述的方法,其中所述金属种晶层的金属是由无电工艺所沉积的镍。
16.如权利要求15所述的方法,其中所述金属层包含铜。
17.如权利要求12所述的方法,其中所述特征是孔,所述孔选自触点、通孔及线。
18.一种用以在基板上沉积材料的方法,包含下列步骤:
将氧化物层沉积在特征的至少一个侧壁和底表面上方,所述特征形成于硅基板中,其中所述硅基板包含:
场区域,所述场区域围绕所述特征,并且具有所述氧化物层设置于所述场区域上;和
背侧,其中所述特征从所述场区域朝向所述背侧延伸;
从所述特征的所述底表面选择性地移除所述氧化物层的一部分,以暴露所述硅基板的一部分,其中选择性地移除所述氧化物层的所述部分包含:将所述氧化物层暴露于氩系溅射蚀刻工艺接着湿式蚀刻工艺,且所述氧化物层的至少一部分留在所述至少一个侧壁上;
在所述特征的底表面处将金属种晶层沉积在所述硅基板的暴露部分上;
于留在所述至少一个侧壁上的所述氧化物层的部分上形成阻挡层;和
通过使电流流经所述硅基板的所述背侧,将所述硅基板暴露于电镀工艺,以在所述金属种晶层上形成金属层。
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10665377B2 (en) | 2014-05-05 | 2020-05-26 | 3D Glass Solutions, Inc. | 2D and 3D inductors antenna and transformers fabricating photoactive substrates |
KR20180134868A (ko) | 2016-02-25 | 2018-12-19 | 3디 글래스 솔루션즈 인코포레이티드 | 3d 커패시터 및 커패시터 어레이 제작용 광활성 기재 |
WO2017177171A1 (en) | 2016-04-08 | 2017-10-12 | 3D Glass Solutions, Inc. | Methods of fabricating photosensitive substrates suitable for optical coupler |
CN109715852B (zh) * | 2016-10-17 | 2021-09-21 | 东京毅力科创株式会社 | 金属布线层形成方法、金属布线层形成装置以及存储介质 |
US10103056B2 (en) * | 2017-03-08 | 2018-10-16 | Lam Research Corporation | Methods for wet metal seed deposition for bottom up gapfill of features |
US11101532B2 (en) | 2017-04-28 | 2021-08-24 | 3D Glass Solutions, Inc. | RF circulator |
US11342896B2 (en) | 2017-07-07 | 2022-05-24 | 3D Glass Solutions, Inc. | 2D and 3D RF lumped element devices for RF system in a package photoactive glass substrates |
US10854946B2 (en) | 2017-12-15 | 2020-12-01 | 3D Glass Solutions, Inc. | Coupled transmission line resonate RF filter |
AU2018399638B2 (en) | 2018-01-04 | 2021-09-02 | 3D Glass Solutions, Inc. | Impedance matching conductive structure for high efficiency RF circuits |
WO2019199470A1 (en) | 2018-04-10 | 2019-10-17 | 3D Glass Solutions, Inc. | Rf integrated power condition capacitor |
KR102475010B1 (ko) | 2018-05-29 | 2022-12-07 | 3디 글래스 솔루션즈 인코포레이티드 | 저 삽입 손실 rf 전송 라인 |
WO2020060824A1 (en) | 2018-09-17 | 2020-03-26 | 3D Glass Solutions, Inc. | High efficiency compact slotted antenna with a ground plane |
US10651081B2 (en) | 2018-09-21 | 2020-05-12 | Nanya Technology Corporation | Semiconductor structure and manufacturing method thereof |
JP7080781B2 (ja) * | 2018-09-26 | 2022-06-06 | 株式会社東芝 | 多孔質層の形成方法、エッチング方法、物品の製造方法、半導体装置の製造方法、及びめっき液 |
US10734308B2 (en) * | 2018-11-20 | 2020-08-04 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
WO2020139951A1 (en) | 2018-12-28 | 2020-07-02 | 3D Glass Solutions, Inc. | Heterogenous integration for rf, microwave and mm wave systems in photoactive glass substrates |
EP3903339A4 (en) | 2018-12-28 | 2022-08-31 | 3D Glass Solutions, Inc. | RING CAPACITOR RF, MICROWAVE AND MM WAVE SYSTEMS |
FR3092589A1 (fr) * | 2019-02-08 | 2020-08-14 | Aveni | Electrodéposition d’un alliage de cobalt et utilisation en microélectronique |
US20220090283A1 (en) * | 2019-02-08 | 2022-03-24 | Aveni | Electrodeposition of a cobalt or copper alloy, and use in microelectronics |
EP3935687B1 (en) | 2019-04-05 | 2023-12-13 | 3D Glass Solutions, Inc. | Glass based empty substrate integrated waveguide devices |
WO2020214788A1 (en) | 2019-04-18 | 2020-10-22 | 3D Glass Solutions, Inc. | High efficiency die dicing and release |
KR102633148B1 (ko) | 2019-05-28 | 2024-02-06 | 삼성전자주식회사 | 관통 비아를 포함하는 반도체 장치 및 이의 제조 방법 |
US11121088B2 (en) * | 2019-10-16 | 2021-09-14 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method of manufacturing the same |
CN110767604B (zh) * | 2019-10-31 | 2022-03-18 | 厦门市三安集成电路有限公司 | 化合物半导体器件和化合物半导体器件的背面铜制程方法 |
KR20220164800A (ko) | 2020-04-17 | 2022-12-13 | 3디 글래스 솔루션즈 인코포레이티드 | 광대역 인덕터 |
JP2022141425A (ja) * | 2021-03-15 | 2022-09-29 | キオクシア株式会社 | 半導体製造方法および半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6509267B1 (en) * | 2001-06-20 | 2003-01-21 | Advanced Micro Devices, Inc. | Method of forming low resistance barrier on low k interconnect with electrolessly plated copper seed layer |
CN101013679A (zh) * | 2007-01-29 | 2007-08-08 | 清华大学 | 用超声化学镀制备集成电路铜互连线和阻挡层的方法 |
CN101911257A (zh) * | 2008-01-23 | 2010-12-08 | 日矿金属株式会社 | 在阻挡层上具有钌电镀层的ulsi微细配线构件 |
CN103620740A (zh) * | 2011-06-10 | 2014-03-05 | 应用材料公司 | 于裸露硅表面而非氧化物表面上的聚合物薄膜的选择性沉积 |
CN104205302A (zh) * | 2012-03-28 | 2014-12-10 | 应用材料公司 | 实现无缝钴间隙填充的方法 |
WO2014204620A1 (en) * | 2013-06-17 | 2014-12-24 | Applied Materials, Inc. | Method for copper plating through silicon vias using wet wafer back contact |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4321283A (en) | 1979-10-26 | 1982-03-23 | Mobil Tyco Solar Energy Corporation | Nickel plating method |
US6498091B1 (en) * | 2000-11-01 | 2002-12-24 | Applied Materials, Inc. | Method of using a barrier sputter reactor to remove an underlying barrier layer |
US20020111013A1 (en) * | 2001-02-15 | 2002-08-15 | Okada Lynn A. | Method for formation of single inlaid structures |
JP4043234B2 (ja) | 2001-06-18 | 2008-02-06 | 株式会社荏原製作所 | 電解加工装置及び基板処理装置 |
JP4304905B2 (ja) * | 2002-03-13 | 2009-07-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US6897148B2 (en) | 2003-04-09 | 2005-05-24 | Tru-Si Technologies, Inc. | Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby |
US20070125657A1 (en) | 2003-07-08 | 2007-06-07 | Zhi-Wen Sun | Method of direct plating of copper on a substrate structure |
US7659203B2 (en) | 2005-03-18 | 2010-02-09 | Applied Materials, Inc. | Electroless deposition process on a silicon contact |
US20070190362A1 (en) | 2005-09-08 | 2007-08-16 | Weidman Timothy W | Patterned electroless metallization processes for large area electronics |
US20070071888A1 (en) | 2005-09-21 | 2007-03-29 | Arulkumar Shanmugasundram | Method and apparatus for forming device features in an integrated electroless deposition system |
JP2008053568A (ja) | 2006-08-25 | 2008-03-06 | Nec Electronics Corp | 半導体装置および半導体装置の製造方法 |
KR100883806B1 (ko) | 2007-01-02 | 2009-02-17 | 삼성전자주식회사 | 반도체 장치 및 그 형성방법 |
US7566657B2 (en) * | 2007-01-17 | 2009-07-28 | Hewlett-Packard Development Company, L.P. | Methods of forming through-substrate interconnects |
KR101300587B1 (ko) * | 2009-12-09 | 2013-08-28 | 한국전자통신연구원 | 반도체 소자의 제조 방법 |
US20110207323A1 (en) * | 2010-02-25 | 2011-08-25 | Robert Ditizio | Method of forming and patterning conformal insulation layer in vias and etched structures |
US20130213816A1 (en) * | 2010-04-06 | 2013-08-22 | Tel Nexx, Inc. | Incorporating High-Purity Copper Deposit As Smoothing Step After Direct On-Barrier Plating To Improve Quality Of Deposited Nucleation Metal In Microscale Features |
JP5996244B2 (ja) | 2011-04-19 | 2016-09-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 半導体上の銅のめっき |
WO2013095433A1 (en) | 2011-12-21 | 2013-06-27 | Intel Corporation | Electroless filled conductive structures |
JP5925006B2 (ja) * | 2012-03-26 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US8791005B2 (en) | 2012-06-18 | 2014-07-29 | International Business Machines Corporation | Sidewalls of electroplated copper interconnects |
US20140374907A1 (en) | 2012-06-21 | 2014-12-25 | Applied Materials, Inc. | Ultra-thin copper seed layer for electroplating into small features |
US9029258B2 (en) | 2013-02-05 | 2015-05-12 | Lam Research Corporation | Through silicon via metallization |
US20150137323A1 (en) * | 2013-11-15 | 2015-05-21 | United Microelectronics Corp. | Method for fabricating through silicon via structure |
US9617648B2 (en) * | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
-
2016
- 2016-12-19 CN CN201680079254.4A patent/CN108474129B/zh not_active Expired - Fee Related
- 2016-12-19 JP JP2018537774A patent/JP6903061B2/ja active Active
- 2016-12-19 WO PCT/US2016/067571 patent/WO2017127197A1/en active Application Filing
- 2016-12-19 KR KR1020187023965A patent/KR20180097179A/ko unknown
- 2016-12-19 US US15/382,945 patent/US9935004B2/en active Active
-
2017
- 2017-01-04 TW TW106100097A patent/TWI718227B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6509267B1 (en) * | 2001-06-20 | 2003-01-21 | Advanced Micro Devices, Inc. | Method of forming low resistance barrier on low k interconnect with electrolessly plated copper seed layer |
CN101013679A (zh) * | 2007-01-29 | 2007-08-08 | 清华大学 | 用超声化学镀制备集成电路铜互连线和阻挡层的方法 |
CN101911257A (zh) * | 2008-01-23 | 2010-12-08 | 日矿金属株式会社 | 在阻挡层上具有钌电镀层的ulsi微细配线构件 |
CN103620740A (zh) * | 2011-06-10 | 2014-03-05 | 应用材料公司 | 于裸露硅表面而非氧化物表面上的聚合物薄膜的选择性沉积 |
CN104205302A (zh) * | 2012-03-28 | 2014-12-10 | 应用材料公司 | 实现无缝钴间隙填充的方法 |
WO2014204620A1 (en) * | 2013-06-17 | 2014-12-24 | Applied Materials, Inc. | Method for copper plating through silicon vias using wet wafer back contact |
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