KR20180074660A - 타일형 이미지 센서를 갖춘 방법 및 장치 - Google Patents

타일형 이미지 센서를 갖춘 방법 및 장치 Download PDF

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Publication number
KR20180074660A
KR20180074660A KR1020187004576A KR20187004576A KR20180074660A KR 20180074660 A KR20180074660 A KR 20180074660A KR 1020187004576 A KR1020187004576 A KR 1020187004576A KR 20187004576 A KR20187004576 A KR 20187004576A KR 20180074660 A KR20180074660 A KR 20180074660A
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South Korea
Prior art keywords
sensor
substrate
tiles
tile
adhesive
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KR1020187004576A
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English (en)
Korean (ko)
Inventor
브래들리 에스 자드리치
마크 이 쉐퍼
에드워드 에이 틱크너
티모씨 제이 워직
스티븐 에프 엔츠
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케어스트림 덴탈 테크놀로지 톱코 리미티드
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Publication of KR20180074660A publication Critical patent/KR20180074660A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H01L27/14663—
    • H01L27/14676—
    • H01L27/1469—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Toxicology (AREA)
KR1020187004576A 2015-08-18 2016-07-26 타일형 이미지 센서를 갖춘 방법 및 장치 Withdrawn KR20180074660A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/828,772 2015-08-18
US14/828,772 US9599723B2 (en) 2015-08-18 2015-08-18 Method and apparatus with tiled image sensors
PCT/US2016/043962 WO2017030751A1 (en) 2015-08-18 2016-07-26 Method and apparatus with tiled image sensors

Publications (1)

Publication Number Publication Date
KR20180074660A true KR20180074660A (ko) 2018-07-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187004576A Withdrawn KR20180074660A (ko) 2015-08-18 2016-07-26 타일형 이미지 센서를 갖춘 방법 및 장치

Country Status (7)

Country Link
US (2) US9599723B2 (enExample)
EP (1) EP3338111A1 (enExample)
JP (1) JP2018532293A (enExample)
KR (1) KR20180074660A (enExample)
CN (1) CN108291972A (enExample)
TW (1) TW201724548A (enExample)
WO (1) WO2017030751A1 (enExample)

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KR20200113129A (ko) * 2019-03-22 2020-10-06 아크소프트 코포레이션 리미티드 타일형 이미지 센서

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US11869912B2 (en) * 2020-07-15 2024-01-09 Semiconductor Components Industries, Llc Method for defining a gap height within an image sensor package
CN114520239B (zh) * 2020-11-20 2025-05-13 京东方科技集团股份有限公司 X射线平板探测器及其制作方法、探测装置、成像系统
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Also Published As

Publication number Publication date
TW201724548A (zh) 2017-07-01
WO2017030751A1 (en) 2017-02-23
US20170153334A1 (en) 2017-06-01
CN108291972A (zh) 2018-07-17
EP3338111A1 (en) 2018-06-27
JP2018532293A (ja) 2018-11-01
US9846246B2 (en) 2017-12-19
US20170052263A1 (en) 2017-02-23
US9599723B2 (en) 2017-03-21

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Patent event date: 20180214

Patent event code: PA01051R01D

Comment text: International Patent Application

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