JP2018532293A - タイル張りの画像センサを用いた方法および装置 - Google Patents

タイル張りの画像センサを用いた方法および装置 Download PDF

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Publication number
JP2018532293A
JP2018532293A JP2018509503A JP2018509503A JP2018532293A JP 2018532293 A JP2018532293 A JP 2018532293A JP 2018509503 A JP2018509503 A JP 2018509503A JP 2018509503 A JP2018509503 A JP 2018509503A JP 2018532293 A JP2018532293 A JP 2018532293A
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sensor
substrate
tiles
adhesive
tile
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JP2018532293A5 (enExample
Inventor
ブラッドレイ エス ジャドリッチ
ブラッドレイ エス ジャドリッチ
マーク イー シャファー
マーク イー シャファー
エドワード エー チックナー
エドワード エー チックナー
ティモシー ジェイ ウォジック
ティモシー ジェイ ウォジック
スティーブン エフ エンヅ
スティーブン エフ エンヅ
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ケアストリーム・デンタル・テクノロジー・トプコ・リミテッド
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Publication of JP2018532293A publication Critical patent/JP2018532293A/ja
Publication of JP2018532293A5 publication Critical patent/JP2018532293A5/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Toxicology (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2018509503A 2015-08-18 2016-07-26 タイル張りの画像センサを用いた方法および装置 Ceased JP2018532293A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/828,772 US9599723B2 (en) 2015-08-18 2015-08-18 Method and apparatus with tiled image sensors
US14/828,772 2015-08-18
PCT/US2016/043962 WO2017030751A1 (en) 2015-08-18 2016-07-26 Method and apparatus with tiled image sensors

Publications (2)

Publication Number Publication Date
JP2018532293A true JP2018532293A (ja) 2018-11-01
JP2018532293A5 JP2018532293A5 (enExample) 2019-09-12

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JP2018509503A Ceased JP2018532293A (ja) 2015-08-18 2016-07-26 タイル張りの画像センサを用いた方法および装置

Country Status (7)

Country Link
US (2) US9599723B2 (enExample)
EP (1) EP3338111A1 (enExample)
JP (1) JP2018532293A (enExample)
KR (1) KR20180074660A (enExample)
CN (1) CN108291972A (enExample)
TW (1) TW201724548A (enExample)
WO (1) WO2017030751A1 (enExample)

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US11156510B2 (en) * 2017-05-26 2021-10-26 Shenzhen New Degree Technology Co., Ltd. Key unit and key array
CN107361858A (zh) * 2017-08-29 2017-11-21 蒙显章 一次性手术定位膜及定位膜包
US11942503B2 (en) 2018-05-08 2024-03-26 Eastern Blue Technologies, Inc. Module and methods of assembly for large area flat panel detectors
KR102393910B1 (ko) * 2019-03-22 2022-05-03 아크소프트 코포레이션 리미티드 타일형 이미지 센서
US11869912B2 (en) 2020-07-15 2024-01-09 Semiconductor Components Industries, Llc Method for defining a gap height within an image sensor package
CN114520239B (zh) * 2020-11-20 2025-05-13 京东方科技集团股份有限公司 X射线平板探测器及其制作方法、探测装置、成像系统
US12261186B2 (en) 2021-03-25 2025-03-25 Raytheon Company Mosaic focal plane array
CN115201236B (zh) * 2021-04-14 2025-10-24 佳能医疗系统株式会社 放射线检测器模块、放射线检测器及x射线ct装置
JP2024065926A (ja) * 2022-10-31 2024-05-15 キヤノン株式会社 放射線検出装置、その製造方法、センサモジュール及びｃｔ装置

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JP2014002115A (ja) * 2012-06-20 2014-01-09 Canon Inc 放射線検出装置、その製造方法及び撮像システム
EP2735888A2 (en) * 2012-11-21 2014-05-28 Zakrytoe Akcionernoe Obshchestvo "Impul's" X-ray imaging detector, method for manufacturing a photosensitive element and an x-ray imaging detector

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Also Published As

Publication number Publication date
US9846246B2 (en) 2017-12-19
US9599723B2 (en) 2017-03-21
TW201724548A (zh) 2017-07-01
EP3338111A1 (en) 2018-06-27
KR20180074660A (ko) 2018-07-03
US20170153334A1 (en) 2017-06-01
CN108291972A (zh) 2018-07-17
US20170052263A1 (en) 2017-02-23
WO2017030751A1 (en) 2017-02-23

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