Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
  • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
  • G01T1/16—Measuring radiation intensity
  • G01T1/20—Measuring radiation intensity with scintillation detectors
  • G01T1/2018—Scintillation-photodiode combinations
  • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
  • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
  • G01T1/16—Measuring radiation intensity
  • G01T1/20—Measuring radiation intensity with scintillation detectors
  • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
  • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
  • G01T1/16—Measuring radiation intensity
  • G01T1/20—Measuring radiation intensity with scintillation detectors
  • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
  • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
  • G01T1/16—Measuring radiation intensity
  • G01T1/24—Measuring radiation intensity with semiconductor detectors
  • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/10—Measuring as part of the manufacturing process
  • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
  • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/10—Integrated devices
  • H10F39/12—Image sensors
  • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
  • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
  • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/10—Integrated devices
  • H10F39/12—Image sensors
  • H10F39/191—Photoconductor image sensors
  • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass

Definitions

• the present invention generally relates to the field of medical radiographic imaging systems and, in particular, to digital radiography (DR) X-ray detectors sometimes referred to as flat panel detectors (FPD), and methods of making flat panel detectors.
• DR digital radiography
• FPD flat panel detectors
• Solid-state, ionizing radiation based detectors used in projection radiography typically require direct or indirect conversion image sensors.
• Direct conversion image sensors such as made using selenium, directly capture X-rays in a photo-conductive material to produce electrical signals in an array of pixels.
• Indirect sensors such as made using amorphous silicon (a-Si), and complementary metal oxide semiconductor (CMOS), use a scintillating material to convert X-rays to visible light in the pixel array.
• a-Si amorphous silicon
• CMOS complementary metal oxide semiconductor
• To fabricate large area flat panel detectors smaller planar, rectangular sensor arrays may be tiled together in an M*N two dimensional arrangement to form larger panels. Thus, accurate alignment and assembly of such smaller image sensor tiles may be desired for particular imaging applications.
• Embodiments of the presently disclosed invention are intended to provide simple and superior methods to advantageously assemble a plurality of image sensor tiles.
• An array of sensor tiles may be attached to a substrate using a compliant film that includes an adhesive.
• a thickness of the compliant film varies depending on a thickness of the sensor tiles so that outward facing sides of the sensor tiles are coplanar.
• an imaging device may have an array of sensor tiles attached to a substrate on a bottom side of the sensor tiles.
• a sheet is disposed between the array of sensor tiles and the substrate, the sheet being made from a compressible, compliant material.
• An adhesive is also disposed between the array of sensor tiles and the substrate on both sides of the sheet.
• a method of fabricating a tiled sensor array includes providing a substantially flat surface, aligning a plurality of sensor tiles using the flat surface, placing a compliant film on a substrate using an adhesive therebetween, pressing the compliant film against the back sides of the plurality of sensor tiles including an adhesive therebetween, and removing the flat surface to release the tiled sensor array and substrate having the compliant film adhered therebetween.
• an apparatus includes an array of
• a compliant film is placed between the array and the substrate, wherein the film includes adhesive.
• a thickness of the compliant film is different between the substrate and a first one of the tiles as compared to the film between the substrate and a second one of the tiles.
• the top sides of the sensor tiles are coplanar.
• FIG. 1 is a schematic diagram showing an exemplary radiographic imaging system using a DR detector
• FIG. 2 is a diagram of an exemplary ⁇ ⁇ ⁇ two dimensional arrangement of a plurality of die with alignment orientation
• FIG. 3A is a side view showing a plurality of die in an exemplary tiled image sensor assembly
• FIG. 3B is a top view showing the plurality of die in the exemplary tiled image sensor assembly of FIG. 3 A;
• FIG. 4 is a diagram of another exemplary MxN two dimensional arrangement of a plurality of die with alignment orientation
• FIG. 5 is an exploded isometric view of an exemplary tiled image sensor assembly using two die in an MxN two dimensional arrangement with glass flat and alignment markers;
• FIG. 6 is a flow chart of an exemplary method of making the tiled image sensor assembly of FIGS. 3A-3B and FIG. 5;
• FIG. 7 is a side view showing a step of the exemplary method of making the exemplary tiled image sensor assembly
• FIG. 8 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly
• FIG. 9 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly
• FIG. 10 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly
• FIG. 11 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly
• FIG. 12 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly
• FIG. 13 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly
• FIG. 14 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly.
• FIG. 15 is a side view showing another step of the exemplary method of making the exemplary tiled image sensor assembly.
• FIGS. 16A-16B are perspective views illustrating a pressure direction applied to the sensor tiles and a representative deflection in the sensor tiles caused thereby.
• FIG. 1 A schematic diagram of one exemplary projection X-ray system 100 is shown in FIG. 1.
• the system 100 may be a stationary fixed exam room system or a mobile X-ray imaging system.
• the X-ray source 112 and the DR detector 114 may be part of a rotatable system such as a gantry driven system, a C-arm, or table system, for example.
• the detector 114 is positioned diametrically opposite the x-ray source 112 and an object 110 under examination is positioned therebetween, whereby x-rays 104 pass through the object 110 and are detected by a two-dimensional array of imaging elements, or pixels, in the detector 114.
• Rotation of the source 112 and detector 114 components in either direction indicated by arrow 102, while maintaining the object 110 at a rotational axis of the source 112 and detector 114, may be used to enable cone beam computed tomography (CBCT) and 3-D image reconstruction applications, such as in medical and dental applications, in the x-ray imaging system 100.
• the x-ray generator 116 causes the x-ray source 112 to fire one or a sequence of pulses of x- ray radiation 104, which firing may be controlled and synchronized with activation of the detector 114 using detector control circuits 118. Operation and control of the x-ray system 100 components just described may be centralized in a computer system 106.
• the exemplary DR detector 114 and the image sensor assembly 115 therein, as shown in FIG. 1 , will be described in more detail herein.
• the orientation of x-ray system 100 components as illustrate in FIG. 1 may be varied.
• the object 110 under examination may be a human or animal patient, or another object, and may be lying on an examination table, standing, sitting upright, or positioned with respect to the source 112 and detector 114 in some other suitable orientation.
• FIG. 2 is a diagram of an MxN array 200 of image sensor tiles 201- 204, as used in one or more disclosed embodiments of the image sensor assembly 115 (FIG. 1) of the present invention.
• Each of the sensor tiles 201-204 is substantially planar and generally rectangular in shape as illustrated herein.
• Each of the sensor tiles 201-204 may be said to have a major surface referred to herein as a top side, or sensor side, and a major surface opposite the top side referred to herein as a bottom side, or back side.
• the sensor tiles 201-204 may also be referred to herein individually as “a die” or in plural as “die”, since the sensor die are typically precision cut or “diced” from a larger piece of thin-film transistor (TFT) glass or silicon wafer.
• TFT thin-film transistor
• the plurality of die need to be aligned to each other in the X, Y, and Theta-Z ( ⁇ ⁇ ) axes as indicated by the arrows 208 in FIG. 2.
• the gap indicated by arrows 206 between adjacent die is intended to be minimized as the die are finally positioned, and may comprise a distance of about half the width (or length) of a pixel, or less, wherein a pixel width (or length) may be defined and measured by reference to one or more pixels formed on one or all of the die 201-204, such as by reference to a mean pixel width (or length), a designed width (or length) of the pixels, or a mean dimension of the pixels which may be a mean length or width.
• the alignment is accomplished in such a way as to also minimize the number of "dead zone" pixels between die that may otherwise appear in a radiographic image captured by the detector 114.
• An integer number of dead zone pixels between die is desired, with a one (1) pixel width dead zone being preferred.
• Such alignment between the die may be typically controlled to a tolerance of about 1/10 (0.1) pixel. Alignment to this precision may be necessary to produce artifact-free projection radiographic images.
• Electrical contacts or bond pads 210 on the die 201-204 are disposed adjacent to one edge of each die 201-204. This enables what is known to those skilled in the art as a 3 -side buttable configuration. While an arrangement of four die are shown in FIG. 2, the present invention is not limited to four die, as additional die can be aligned in the X-direction, maintaining the 3 -side buttable configuration.
• FIGS. 3A and 3B show side and top views, respectively, of one embodiment of an image sensor assembly 115 of the present invention.
• a rigid substrate 302 is mated to the MxN arrangement of die 200 using a compliant layer, support, sheet, or film 306.
• Printed circuit boards (PCBs) 308, 309, with analog and/or digital detector electronics can be added to the substrate 302 using adhesive 508, 509 (FIG. 5), respectively, and electrically connected to the image sensor arrangement 200 as an integral part of the image sensor assembly 115.
• PCBs Printed circuit boards
• Electrical contacts between the image sensor tiles 201-204 and the PCBs 308, 309 may include wire bonding 310, anisotropic conductive film (ACF) bonding through flex circuits, or other suitable electrical contact means and methods.
• the major surfaces of the die 201-204 facing outward from the page of FIG. 3B are the top sides, or top surfaces, of the sensor tiles 201-204, which face away from the substrate 302.
• the top sides, or sensor sides are generally positioned by an operator of the imaging system 100 to face the x-ray source during examinations using the DR detector 114.
• the top surfaces 311, 312, 313, and 314 of the die 201, 202, 203, and 204, respectively, are illustrated in the side and top views of FIGS. 3 A and 3B.
• FIG. 5 shows an exploded isometric view of the components used in the present invention as described above.
• a glass flat 502 used during the die alignment process as described herein.
• the glass flat 502 is a planar, rigid device having a plurality of alignment markers 504 (six markers in the example of FIG. 5) on its flat, top surface which faces the sensor side of each die 201, 202.
• the glass flat 502 also includes a plurality of holes 506 formed therethrough corresponding to each of the die. In one embodiment, one of the holes 506 corresponds to each of the die 201, 202.
• the holes 506 are used to secure the die 201, 202, to the glass flat using a vacuum (suction) source in communication with the holes 506 so that the holes 506 act as channels for the vacuum source.
• the compliant film 306 may have perforations 307 formed therethrough corresponding to a pattern 309 of adhesive 1108 (FIG. 11) applied therein, as will be explained below.
• FIG. 6 is a flow chart of an exemplary method of making a plurality of embodiments of the present invention. The steps illustrated in FIG. 6 will be explained in more detail with reference to FIGS. 7-15. Steps 602-606 will now be described with respect to FIG. 7.
• a die 201 is selected and placed upon the glass flat 502 alignment fixture having alignment markings 504 thereon to align the die 201 thereto.
• a protective layer (not shown) may be applied to at least the sensor side of the die 201 prior to or during the procedure described herein, which may be removed later as desired.
• the die 201 is first held against a transfer plate 702 which has at least one hole 703 formed therethrough, whereby a vacuum source 710 is applied to the hole 703 to hold the die 201 against the plate 702 while moving and positioning the die 201 above selected ones of the alignment markers 504 on the glass flat 502.
• a vacuum (suction) source 710 is in communication with the hole 703 so that the hole 703 may act as a channel for the vacuum.
• a clamp may be used in place of the transfer plate + vacuum source.
• a mechanism (not shown) may be attached to the transfer plate 702 to facilitate movement and positioning of the die 201.
• a vision camera 706 and optics 704 may be used to image features of the die 201 (such as an edge of the die 201) and selected alignment markers 504 through the glass flat 502.
• the glass flat 502 is advantageously made from a suitably transparent material sufficient to allow use of the camera 706 for viewing therethrough.
• the optics 704 may be adjustable to allow adequate focusing of either or both the die 201 and selected alignment markers 504.
• alignment of the die 201 in the X, Y, ⁇ ⁇ directions is performed.
• a vacuum source 810 is applied to the bottom of the hole 506 in the glass flat 502 to engage the die 201 against the top surface of the glass flat 502.
• Vacuum 710 to the transfer plate 702 is then removed to disengage the transfer plate 702 from the die 201, leaving the die 201 secured against glass flat 502.
• a second die 202 is then aligned adjacent to, or abutting, as desired, the first die 201 using selected alignment markers 504 on the glass flat 502.
• the second die 202 is aligned using the same process steps 602-608 as used to align the first die 201, described above.
• third and/or additional die may then be aligned adjacent to, or abutting, as desired, the first or second die 201, 202, using selected alignment markers 504 on the glass flat 502 to form a completed aligned arrangement of die 1000 on the glass flat 502.
• the third and/or additional die may be aligned using the same process steps 602-608 as used to align the first and second die 201, 202. Because of die-to-die variations primarily due to thickness, runout, and wedge, the back sides (i.e., the surfaces facing away from the glass flat 502) of both die 201, 202 and any additional die, may not be co-planar.
• a 200 mm diameter silicon wafer that is diced to fabricate the die 201, 202 illustrated herein may have thickness and flatness variations across its diameter as large as 0.050 mm. It is therefore desired that attachment of a substrate, as will be explained herein, to the plurality of die 201, 202 allow for these variations in thickness by using the compliant film 306 as described herein.
• decision step 610 may be followed by steps 612 and 620, with reference to FIG. 11, wherein a compliant film 306, having a plurality of perforations 307 formed therethrough, is positioned on one surface of the substrate 302.
• the surface 1104 of the complaint film 306 that faces the surface of the substrate 302 may be fabricated to have, or may be later treated to provide, a higher coefficient of friction than its opposite side 1106 to facilitate a tackier engagement with the surface of the substrate 302.
• the opposite surface 1106 of the compliant film 306 that faces away from the substrate 302 may either have a lower tack for better repositioning capability against the dies 201, 202 (FIG. 12) or no tack at all.
• a viscous, high tack, adhesive 1108 is dispensed into the perforations 307 in the compliant film 306 using a dispenser 1110 that places the adhesive 1108 at least into the perforations 307 so that the adhesive 1108 makes contact at least with the surface of the substrate 302, as shown in FIG. 11.
• the adhesive 1108 may be a UV, thermal, or room temperature curing adhesive, as desired.
• the adhesive 1108 is a UV curing adhesive having a fast cure time and also minimizes strain and stress between the substrate and die during the curing operation (FIG. 12).
• a compliant film 306 may be selected that has significantly lower stiffness and elastic modulus compared with the viscous adhesive 1108 after the adhesive is UV cured.
• the compliant film 306 and adhesive 1108 properties cited herein are adequate to achieve thermal and long term stability of the tiled image sensor assembly 115.
• the substrate 302 and the compliant film 306, having the viscous adhesive 1108 dispensed therein are inverted and pressed against the aligned arrangement of die 1000, wherein the adhesive 1108 in the perforations 307 contacts the back sides of the die 201, 202.
• a curing adhesive may be performed, at step 624.
• the substrate may be optically transparent to UV light in this embodiment.
• a UV curing adhesive may be used and a curing source 1202, such as an ultraviolet (UV) light, may be used in a curing process at step 624.
• a different adhesive may be used wherein no separate curing step is required.
• the vacuum source 810 applied to the holes 506 is turned off and, with reference to FIG. 13 and step 626, the tiled sensors 1300 are removed from the glass flat 502.
• the die 201, 202, top surfaces 311, 312, respectively are coplanar, which is particularly critical at the tile seam 1302 so that adequate image sharpness and uniformity is achieved.
• the compliant film 306 is compressed to a smaller thickness 1304 between the substrate 302 and the die 201 as compared to its thickness between the substrate 302 and the die 202. This is due to the variation in thickness of the die 201, 202 (the die 201 is thicker) when the die 201, 202, are pressed against the compliant film 306.
• decision step 610 may alternatively be followed by steps 612 and 616, with reference to FIG. 11, wherein a compliant film 306, having a plurality of perforations 307 formed therethrough, is positioned on and adhered to one surface of the substrate 302.
• a compliant film 306 having a plurality of perforations 307 formed therethrough
• an alternative compliant film without perforations may be positioned and adhered on one surface of the substrate 302.
• the compliant film 306 with or without perforations may be coated, treated, layered, impregnated, with an adhesive on one or both its major surfaces.
• the compliant film 306 may not be used in the method described herein and only an adhesive may be placed between the substrate and die 201, 202.
• the adhesive described herein may be a UV, thermal, or room temperature curing adhesive, as desired.
• the adhesive is a UV curing adhesive having a fast cure time and also minimizes strain and stress between the substrate and die during the curing operation (FIG. 12).
• the substrate 302 and the compliant film 306, with or without perforations, having adhesive thereon, as described herein, are inverted and pressed against the aligned arrangement of die 1000.
• the adhesive compliant film 306 contacts the back sides of the die 201 , 202, and a curing process may be performed.
• a UV curing adhesive may be used and a curing source 1202, such as an ultraviolet (UV) light, may be used in a curing process.
• a different adhesive may be used wherein no separate curing step is required.
• the vacuum source 810 applied to the holes 506 may be turned off and, with reference to FIG. 13 and step 626, the tiled sensors 1300 are removed from the glass flat 502.
• the die 201, 202, top surfaces 311, 312, respectively are coplanar, which is particularly critical at the tile seam 1302 so that adequate image sharpness and uniformity is achieved.
• the compliant film 306, with or without perforations, is compressed to a smaller thickness 1304 between the substrate 302 and the die 201 as compared to its thickness between the substrate 302 and the die 202. This is due to the variation in thickness of the die 201, 202 (the die 201 is thicker) when the die 201, 202, are pressed against the compliant film 306.
• respective PCBs 308, 309 can be attached to the substrate 302 using adhesives 508, 509, respectively, pressure sensitive adhesive (PSA), fasteners, or other means.
• PSA pressure sensitive adhesive
• electrical connection between the PCBs 308, 309, and the die 201, 202 may be formed using wire bonds 310, or other means as described herein.
• a scintillator 1506 for use as an x-ray wavelength converter, in embodiments using indirect conversion image sensors, may be applied to the top surfaces of the tiled sensors, 201, 202, to form the image sensor assembly 115. Application of the scintillator 1506 to the tiled sensors 201, 202, can be performed via pressure, optical coupling adhesive (OCA) attachment, or similar optical coupling gels or adhesives.
• OCA optical coupling adhesive
• Finite Element Analysis (FEA) simulation was performed to measure the effect of attaching a scintillator against the tiled sensor assembly, with and without the compliant film 306.
• uniform pressure 1601 of 0.5 MPa was applied on top of both die 201, 202.
• Figure 16A shows a representation of the measured peak-to-peak deformation 1605 of the die 201, 202, in the Z-direction 1603, i.e., deviation from a planar shape in the x-y plane, when only a viscous adhesive is adhered between the die 201 and substrate 302.
• Figure 16B shows a representation of the measured deformation 1607 of the die 201, 202, in the Z-direction 1603 when both a viscous adhesive 1108 and compliant film 306 are adhered between the die 201, 202, and substrate 302.
• Maximum deformation 1605 for the case with only the viscous adhesive 1108 was measured as 0.325 mm
• the deformation 1607 for the case with both the viscous adhesive 1108 and the compliant film 306 was measured at 0.015 mm.
• the deformation is significantly reduced, by over 20x, when using the compliant film 306. This will result in superior scintillator attachment and imaging performance.

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• 2015
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