TW201724548A - 使用分片式影像感測器之方法及設備 - Google Patents
使用分片式影像感測器之方法及設備 Download PDFInfo
- Publication number
- TW201724548A TW201724548A TW105126269A TW105126269A TW201724548A TW 201724548 A TW201724548 A TW 201724548A TW 105126269 A TW105126269 A TW 105126269A TW 105126269 A TW105126269 A TW 105126269A TW 201724548 A TW201724548 A TW 201724548A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- sensor
- sheets
- adhesive
- flexible film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000000853 adhesive Substances 0.000 claims description 60
- 230000001070 adhesive effect Effects 0.000 claims description 60
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 2
- 239000007767 bonding agent Substances 0.000 claims 2
- 239000011230 binding agent Substances 0.000 abstract description 9
- 239000011521 glass Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002601 radiography Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007408 cone-beam computed tomography Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/243—Modular detectors, e.g. arrays formed from self contained units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Toxicology (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/828,772 US9599723B2 (en) | 2015-08-18 | 2015-08-18 | Method and apparatus with tiled image sensors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201724548A true TW201724548A (zh) | 2017-07-01 |
Family
ID=56682254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105126269A TW201724548A (zh) | 2015-08-18 | 2016-08-17 | 使用分片式影像感測器之方法及設備 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9599723B2 (enExample) |
| EP (1) | EP3338111A1 (enExample) |
| JP (1) | JP2018532293A (enExample) |
| KR (1) | KR20180074660A (enExample) |
| CN (1) | CN108291972A (enExample) |
| TW (1) | TW201724548A (enExample) |
| WO (1) | WO2017030751A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107850678B (zh) * | 2015-07-17 | 2021-05-18 | 模拟技术公司 | 用于辐射成像模态装置的探测器阵列的探测器单元 |
| US9599723B2 (en) * | 2015-08-18 | 2017-03-21 | Carestream Health, Inc. | Method and apparatus with tiled image sensors |
| US10686003B2 (en) * | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
| WO2018202465A1 (en) * | 2017-05-01 | 2018-11-08 | Koninklijke Philips N.V. | Multi-layer radiation detector |
| US11156510B2 (en) * | 2017-05-26 | 2021-10-26 | Shenzhen New Degree Technology Co., Ltd. | Key unit and key array |
| CN107361858A (zh) * | 2017-08-29 | 2017-11-21 | 蒙显章 | 一次性手术定位膜及定位膜包 |
| US11942503B2 (en) | 2018-05-08 | 2024-03-26 | Eastern Blue Technologies, Inc. | Module and methods of assembly for large area flat panel detectors |
| KR102393910B1 (ko) * | 2019-03-22 | 2022-05-03 | 아크소프트 코포레이션 리미티드 | 타일형 이미지 센서 |
| US11869912B2 (en) | 2020-07-15 | 2024-01-09 | Semiconductor Components Industries, Llc | Method for defining a gap height within an image sensor package |
| CN114520239B (zh) * | 2020-11-20 | 2025-05-13 | 京东方科技集团股份有限公司 | X射线平板探测器及其制作方法、探测装置、成像系统 |
| US12261186B2 (en) | 2021-03-25 | 2025-03-25 | Raytheon Company | Mosaic focal plane array |
| CN115201236B (zh) * | 2021-04-14 | 2025-10-24 | 佳能医疗系统株式会社 | 放射线检测器模块、放射线检测器及x射线ct装置 |
| JP2024065926A (ja) * | 2022-10-31 | 2024-05-15 | キヤノン株式会社 | 放射線検出装置、その製造方法、センサモジュール及びct装置 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3707760A (en) | 1971-05-19 | 1973-01-02 | Sieburg Ind Inc | Method and device for article working such as fracturing of semiconductor slices and separating semiconductor chips |
| US4617420A (en) | 1985-06-28 | 1986-10-14 | The Standard Oil Company | Flexible, interconnected array of amorphous semiconductor photovoltaic cells |
| US4942405A (en) | 1988-10-11 | 1990-07-17 | Hewlett-Packard Company | Light emitting diode print head assembly |
| US5072074A (en) | 1990-07-24 | 1991-12-10 | Interflex Corporation | High yield combined rigid and flexible printed circuits and method of manufacture |
| US5453145A (en) | 1991-03-04 | 1995-09-26 | Eastman Kodak Company | Z-axis dimensional control in manufacturing an LED printhead |
| US5254480A (en) | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
| FR2693033B1 (fr) | 1992-06-30 | 1994-08-19 | Commissariat Energie Atomique | Dispositif d'imagerie de grande dimension. |
| US5693947A (en) | 1993-04-28 | 1997-12-02 | The University Of Surrey | Radiation detectors |
| US5670009A (en) | 1995-02-28 | 1997-09-23 | Eastman Kodak Company | Assembly technique for an image sensor array |
| JP3235717B2 (ja) * | 1995-09-28 | 2001-12-04 | キヤノン株式会社 | 光電変換装置及びx線撮像装置 |
| JP3805031B2 (ja) | 1995-10-20 | 2006-08-02 | キヤノン株式会社 | 光電変換装置 |
| US5909244A (en) | 1996-04-15 | 1999-06-01 | Massachusetts Institute Of Technology | Real time adaptive digital image processing for dynamic range remapping of imagery including low-light-level visible imagery |
| GB2315157B (en) | 1996-07-11 | 1998-09-30 | Simage Oy | Imaging apparatus |
| US5827757A (en) | 1996-07-16 | 1998-10-27 | Direct Radiography Corp. | Fabrication of large area x-ray image capturing element |
| US5834782A (en) | 1996-11-20 | 1998-11-10 | Schick Technologies, Inc. | Large area image detector |
| JP3285815B2 (ja) | 1998-03-12 | 2002-05-27 | 松下電器産業株式会社 | リードフレーム,樹脂封止型半導体装置及びその製造方法 |
| WO2001048831A1 (en) | 1999-12-24 | 2001-07-05 | Bae Systems Information And Electronic Systems Integration, Inc. | Multi-color, multi-focal plane optical detector |
| JP3637826B2 (ja) | 2000-01-21 | 2005-04-13 | セイコーエプソン株式会社 | 半導体記憶装置 |
| US6426991B1 (en) | 2000-11-16 | 2002-07-30 | Koninklijke Philips Electronics N.V. | Back-illuminated photodiodes for computed tomography detectors |
| US6510195B1 (en) | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
| US6782076B2 (en) | 2001-12-07 | 2004-08-24 | Bede Scientific Instruments Limited | X-ray topographic system |
| US7868665B2 (en) | 2002-03-05 | 2011-01-11 | Nova R&D, Inc. | Integrated circuit and sensor for imaging |
| US6946661B2 (en) | 2002-12-23 | 2005-09-20 | Ge Medical Systems Global Technology Company, Llc | Methods and apparatus for X-ray image detector assemblies |
| US7379528B2 (en) | 2003-01-06 | 2008-05-27 | Koninklijke Philips Electronics N.V. | Radiation detector with shielded electronics for computed tomography |
| CN1973214B (zh) * | 2003-11-10 | 2010-09-15 | 江苏康众数字医疗设备有限公司 | 使用电互连的平铺光电传感器阵列的平板检测器 |
| US20050098732A1 (en) | 2003-11-10 | 2005-05-12 | Ls Technologies, Inc. | Flat-panel detector utilizing electrically interconnecting tiled photosensor arrays |
| US7067817B2 (en) | 2004-01-29 | 2006-06-27 | Hamamatsu Photonics K.K. | Radiation image sensor and making method of same |
| CN101006362A (zh) | 2004-08-13 | 2007-07-25 | 皇家飞利浦电子股份有限公司 | 固态辐射探测器封装技术 |
| US7539284B2 (en) | 2005-02-11 | 2009-05-26 | Besson Guy M | Method and system for dynamic low dose X-ray imaging |
| US20060192087A1 (en) | 2005-02-28 | 2006-08-31 | Real Time Radiography Ltd. | Two-dimensional CMOS-based flat panel imaging sensor |
| CN101278208A (zh) | 2005-10-05 | 2008-10-01 | 皇家飞利浦电子股份有限公司 | 使用薄电路的计算机断层摄影探测器 |
| RU2408110C2 (ru) | 2006-03-30 | 2010-12-27 | Конинклейке Филипс Электроникс, Н.В. | Матрица детекторов излучения |
| US7692709B2 (en) | 2006-05-12 | 2010-04-06 | Ricoh Co., Ltd. | End-to-end design of electro-optic imaging systems with adjustable optical cutoff frequency |
| WO2008003351A1 (en) | 2006-07-04 | 2008-01-10 | Mario Caria | Imaging system with tiled sensor chips having partially overlapping active areas |
| US7450683B2 (en) | 2006-09-07 | 2008-11-11 | General Electric Company | Tileable multi-layer detector |
| GB2446185A (en) | 2006-10-30 | 2008-08-06 | Sensl Technologies Ltd | Optical assembly and method of assembly |
| RU2510520C2 (ru) | 2008-11-21 | 2014-03-27 | Трикселль | Способ сборки ячеистого радиационного детектора |
| JP5665494B2 (ja) * | 2010-06-24 | 2015-02-04 | キヤノン株式会社 | 放射線検出装置及び放射線撮像システム |
| US9012262B2 (en) | 2011-04-19 | 2015-04-21 | Teledyne Rad-Icon Imaging Corp. | Method of direct tiling of an image sensor array |
| US9012859B2 (en) | 2012-05-18 | 2015-04-21 | General Electric Company | Tiled X-ray imager panel and method of forming the same |
| JP6000680B2 (ja) * | 2012-06-20 | 2016-10-05 | キヤノン株式会社 | 放射線検出装置、その製造方法及び撮像システム |
| EA021593B1 (ru) | 2012-11-21 | 2015-07-30 | Закрытое Акционерное Общество "Импульс" | Детектор рентгеновского изображения, способ изготовления фоточувствительного элемента и способ изготовления детектора |
| US9599723B2 (en) * | 2015-08-18 | 2017-03-21 | Carestream Health, Inc. | Method and apparatus with tiled image sensors |
-
2015
- 2015-08-18 US US14/828,772 patent/US9599723B2/en not_active Expired - Fee Related
-
2016
- 2016-07-26 CN CN201680048578.1A patent/CN108291972A/zh active Pending
- 2016-07-26 EP EP16750557.7A patent/EP3338111A1/en not_active Withdrawn
- 2016-07-26 WO PCT/US2016/043962 patent/WO2017030751A1/en not_active Ceased
- 2016-07-26 JP JP2018509503A patent/JP2018532293A/ja not_active Ceased
- 2016-07-26 KR KR1020187004576A patent/KR20180074660A/ko not_active Withdrawn
- 2016-08-17 TW TW105126269A patent/TW201724548A/zh unknown
-
2017
- 2017-02-03 US US15/423,645 patent/US9846246B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US9846246B2 (en) | 2017-12-19 |
| US9599723B2 (en) | 2017-03-21 |
| JP2018532293A (ja) | 2018-11-01 |
| EP3338111A1 (en) | 2018-06-27 |
| KR20180074660A (ko) | 2018-07-03 |
| US20170153334A1 (en) | 2017-06-01 |
| CN108291972A (zh) | 2018-07-17 |
| US20170052263A1 (en) | 2017-02-23 |
| WO2017030751A1 (en) | 2017-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201724548A (zh) | 使用分片式影像感測器之方法及設備 | |
| JP3805031B2 (ja) | 光電変換装置 | |
| US7117588B2 (en) | Method for assembling tiled detectors for ionizing radiation based image detection | |
| US7564112B2 (en) | Semiconductor device, radiographic imaging apparatus, and method for manufacturing the same | |
| WO2001063321A1 (en) | X-ray imaging device and method of manufacture thereof | |
| KR101605317B1 (ko) | 광학식 선택적 전사 장치 및 방법 | |
| CN110121780A (zh) | 基于柔性聚酰亚胺的x射线检测器的分离和再附接 | |
| US11226419B2 (en) | Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device | |
| JP3158252B2 (ja) | ウェーハと回路パターンテープのラミネーション方法 | |
| JP5591277B2 (ja) | 多層板の積層装置および多層板の積層方法 | |
| CN109324341A (zh) | 放射线检测装置及其制造方法和放射线成像系统 | |
| TW200940245A (en) | A jig for a bonding apparatus | |
| JP2007071836A (ja) | 放射線検出装置及び放射線撮像システム | |
| TW201940896A (zh) | 放射線檢測器的製造方法及放射線檢測器的製造裝置 | |
| CN104124254A (zh) | 放射线摄像装置及其制造方法以及放射线检查装置 | |
| KR20190054363A (ko) | 곡면 디텍터의 제조방법 및 이 제조방법에 의해 제조된 곡면 디텍터 | |
| CN110612605A (zh) | 柔性衬底模块及其制造方法 | |
| KR20190036161A (ko) | 플렉서블 전자 소자 제작을 위한 전사 장비 및 이를 이용한 전사 방법 | |
| CN102590849A (zh) | 闪烁器-光传感器夹层及其制造方法以及辐射检测器 | |
| RU136639U1 (ru) | Устройство для сборки матричного фотоприемника | |
| EP3221720B1 (en) | Mammography detector with small chest distance | |
| KR100988576B1 (ko) | 의료용 엑스선 시티 촬영장치 | |
| US20160100812A1 (en) | X-ray detector and method of manufacturing the same | |
| WO2024143168A1 (ja) | 電磁波検出ユニットの製造方法 | |
| KR20090090164A (ko) | 대면적 x선 검출장치의 제조 방법 |