CN108291972A - 具有拼接的图像传感器的方法和设备 - Google Patents

具有拼接的图像传感器的方法和设备 Download PDF

Info

Publication number
CN108291972A
CN108291972A CN201680048578.1A CN201680048578A CN108291972A CN 108291972 A CN108291972 A CN 108291972A CN 201680048578 A CN201680048578 A CN 201680048578A CN 108291972 A CN108291972 A CN 108291972A
Authority
CN
China
Prior art keywords
sensor
pieced together
substrate
adhesive
equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680048578.1A
Other languages
English (en)
Chinese (zh)
Inventor
B.S.贾里奇
M.E.谢弗
E.A.蒂克纳
T.J.沃奇克
S.F.恩茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carestream Health Inc
Original Assignee
Carestream Health Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carestream Health Inc filed Critical Carestream Health Inc
Publication of CN108291972A publication Critical patent/CN108291972A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Toxicology (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201680048578.1A 2015-08-18 2016-07-26 具有拼接的图像传感器的方法和设备 Pending CN108291972A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/828,772 US9599723B2 (en) 2015-08-18 2015-08-18 Method and apparatus with tiled image sensors
US14/828772 2015-08-18
PCT/US2016/043962 WO2017030751A1 (en) 2015-08-18 2016-07-26 Method and apparatus with tiled image sensors

Publications (1)

Publication Number Publication Date
CN108291972A true CN108291972A (zh) 2018-07-17

Family

ID=56682254

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680048578.1A Pending CN108291972A (zh) 2015-08-18 2016-07-26 具有拼接的图像传感器的方法和设备

Country Status (7)

Country Link
US (2) US9599723B2 (enExample)
EP (1) EP3338111A1 (enExample)
JP (1) JP2018532293A (enExample)
KR (1) KR20180074660A (enExample)
CN (1) CN108291972A (enExample)
TW (1) TW201724548A (enExample)
WO (1) WO2017030751A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020194069A3 (ko) * 2019-03-22 2021-10-14 아르크소프트 코포레이션 리미티드 타일형 이미지 센서
CN114520239A (zh) * 2020-11-20 2022-05-20 京东方科技集团股份有限公司 X射线平板探测器及其制作方法、探测装置、成像系统

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10185043B2 (en) * 2015-07-17 2019-01-22 Analogic Corporation Detector unit for detector array of radiation imaging modality
US9599723B2 (en) * 2015-08-18 2017-03-21 Carestream Health, Inc. Method and apparatus with tiled image sensors
US10686003B2 (en) * 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
CN110582708A (zh) * 2017-05-01 2019-12-17 皇家飞利浦有限公司 多层辐射探测器
CN110612507B (zh) * 2017-05-26 2023-06-09 深圳纽迪瑞科技开发有限公司 单按键及按键阵列
CN107361858A (zh) * 2017-08-29 2017-11-21 蒙显章 一次性手术定位膜及定位膜包
US11942503B2 (en) 2018-05-08 2024-03-26 Eastern Blue Technologies, Inc. Module and methods of assembly for large area flat panel detectors
US11869912B2 (en) 2020-07-15 2024-01-09 Semiconductor Components Industries, Llc Method for defining a gap height within an image sensor package
US12261186B2 (en) 2021-03-25 2025-03-25 Raytheon Company Mosaic focal plane array
CN115201236B (zh) * 2021-04-14 2025-10-24 佳能医疗系统株式会社 放射线检测器模块、放射线检测器及x射线ct装置
JP2024065926A (ja) * 2022-10-31 2024-05-15 キヤノン株式会社 放射線検出装置、その製造方法、センサモジュール及びｃｔ装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793047A (en) * 1995-09-28 1998-08-11 Canon Kabushiki Kaisha Photoelectric conversion apparatus and X-ray image pickup apparatus
US5827757A (en) * 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
CN1973214A (zh) * 2003-11-10 2007-05-30 Ls科技股份有限公司 使用电互连的平铺光电传感器阵列的平板检测器
CN102299161A (zh) * 2010-06-24 2011-12-28 佳能株式会社 放射线检测装置和放射线成像系统
CN103515404A (zh) * 2012-06-20 2014-01-15 佳能株式会社 放射线检测装置及其制造方法和成像系统
CN103839954A (zh) * 2012-11-21 2014-06-04 伊姆普斯封闭式股份有限公司 X射线成像探测器及其制造方法和制造感光元件的方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3707760A (en) 1971-05-19 1973-01-02 Sieburg Ind Inc Method and device for article working such as fracturing of semiconductor slices and separating semiconductor chips
US4617420A (en) 1985-06-28 1986-10-14 The Standard Oil Company Flexible, interconnected array of amorphous semiconductor photovoltaic cells
US4942405A (en) 1988-10-11 1990-07-17 Hewlett-Packard Company Light emitting diode print head assembly
US5072074A (en) 1990-07-24 1991-12-10 Interflex Corporation High yield combined rigid and flexible printed circuits and method of manufacture
US5453145A (en) 1991-03-04 1995-09-26 Eastman Kodak Company Z-axis dimensional control in manufacturing an LED printhead
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
FR2693033B1 (fr) 1992-06-30 1994-08-19 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
WO1994025878A1 (en) 1993-04-28 1994-11-10 University Of Surrey Radiation detectors
US5670009A (en) 1995-02-28 1997-09-23 Eastman Kodak Company Assembly technique for an image sensor array
JP3805031B2 (ja) 1995-10-20 2006-08-02 キヤノン株式会社 光電変換装置
US5909244A (en) 1996-04-15 1999-06-01 Massachusetts Institute Of Technology Real time adaptive digital image processing for dynamic range remapping of imagery including low-light-level visible imagery
GB2315157B (en) 1996-07-11 1998-09-30 Simage Oy Imaging apparatus
US5834782A (en) 1996-11-20 1998-11-10 Schick Technologies, Inc. Large area image detector
JP3285815B2 (ja) 1998-03-12 2002-05-27 松下電器産業株式会社 リードフレーム，樹脂封止型半導体装置及びその製造方法
EP1254483A4 (en) 1999-12-24 2008-03-05 Bae Systems Information Multi-color, multi-focal plane optical detector
JP3637826B2 (ja) 2000-01-21 2005-04-13 セイコーエプソン株式会社 半導体記憶装置
US6426991B1 (en) 2000-11-16 2002-07-30 Koninklijke Philips Electronics N.V. Back-illuminated photodiodes for computed tomography detectors
US6510195B1 (en) 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6782076B2 (en) 2001-12-07 2004-08-24 Bede Scientific Instruments Limited X-ray topographic system
US7868665B2 (en) 2002-03-05 2011-01-11 Nova R&D, Inc. Integrated circuit and sensor for imaging
US6946661B2 (en) 2002-12-23 2005-09-20 Ge Medical Systems Global Technology Company, Llc Methods and apparatus for X-ray image detector assemblies
US7379528B2 (en) 2003-01-06 2008-05-27 Koninklijke Philips Electronics N.V. Radiation detector with shielded electronics for computed tomography
US20050098732A1 (en) 2003-11-10 2005-05-12 Ls Technologies, Inc. Flat-panel detector utilizing electrically interconnecting tiled photosensor arrays
US7067817B2 (en) 2004-01-29 2006-06-27 Hamamatsu Photonics K.K. Radiation image sensor and making method of same
US7649178B2 (en) 2004-08-13 2010-01-19 Koninklijke Philips Electronics N.V. Solid state detector packaging technique
US7539284B2 (en) 2005-02-11 2009-05-26 Besson Guy M Method and system for dynamic low dose X-ray imaging
US20060192087A1 (en) 2005-02-28 2006-08-31 Real Time Radiography Ltd. Two-dimensional CMOS-based flat panel imaging sensor
US20080253507A1 (en) 2005-10-05 2008-10-16 Koninklijke Philips Electronics N. V. Computed Tomography Detector Using Thin Circuits
RU2408110C2 (ru) 2006-03-30 2010-12-27 Конинклейке Филипс Электроникс, Н.В. Матрица детекторов излучения
US7692709B2 (en) 2006-05-12 2010-04-06 Ricoh Co., Ltd. End-to-end design of electro-optic imaging systems with adjustable optical cutoff frequency
WO2008003351A1 (en) 2006-07-04 2008-01-10 Mario Caria Imaging system with tiled sensor chips having partially overlapping active areas
US7450683B2 (en) 2006-09-07 2008-11-11 General Electric Company Tileable multi-layer detector
GB2446185A (en) * 2006-10-30 2008-08-06 Sensl Technologies Ltd Optical assembly and method of assembly
WO2010058335A2 (en) 2008-11-21 2010-05-27 Koninklijke Philips Electronics N.V. Assembly method for a tiled radiation detector
EP2700094B1 (en) 2011-04-19 2017-06-07 Teledyne Rad-icon Imaging Corp. Method of direct silicon tiling of a tiled image sensor array
US9012859B2 (en) 2012-05-18 2015-04-21 General Electric Company Tiled X-ray imager panel and method of forming the same
US9599723B2 (en) * 2015-08-18 2017-03-21 Carestream Health, Inc. Method and apparatus with tiled image sensors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793047A (en) * 1995-09-28 1998-08-11 Canon Kabushiki Kaisha Photoelectric conversion apparatus and X-ray image pickup apparatus
US5827757A (en) * 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
CN1973214A (zh) * 2003-11-10 2007-05-30 Ls科技股份有限公司 使用电互连的平铺光电传感器阵列的平板检测器
CN102299161A (zh) * 2010-06-24 2011-12-28 佳能株式会社 放射线检测装置和放射线成像系统
CN103515404A (zh) * 2012-06-20 2014-01-15 佳能株式会社 放射线检测装置及其制造方法和成像系统
CN103839954A (zh) * 2012-11-21 2014-06-04 伊姆普斯封闭式股份有限公司 X射线成像探测器及其制造方法和制造感光元件的方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020194069A3 (ko) * 2019-03-22 2021-10-14 아르크소프트 코포레이션 리미티드 타일형 이미지 센서
CN113826104A (zh) * 2019-03-22 2021-12-21 虹软科技股份有限公司 平铺图像传感器
US11848306B2 (en) 2019-03-22 2023-12-19 Arcsoft Corporation Limited Tiled image sensor
CN113826104B (zh) * 2019-03-22 2024-04-19 虹软科技股份有限公司 平铺图像传感器
CN114520239A (zh) * 2020-11-20 2022-05-20 京东方科技集团股份有限公司 X射线平板探测器及其制作方法、探测装置、成像系统

Also Published As

Publication number Publication date
US9846246B2 (en) 2017-12-19
EP3338111A1 (en) 2018-06-27
KR20180074660A (ko) 2018-07-03
JP2018532293A (ja) 2018-11-01
WO2017030751A1 (en) 2017-02-23
US20170153334A1 (en) 2017-06-01
US20170052263A1 (en) 2017-02-23
TW201724548A (zh) 2017-07-01
US9599723B2 (en) 2017-03-21

Similar Documents

Publication Publication Date Title
US9846246B2 (en) Method and apparatus with tiled image sensors
CN102216807B (zh) 平铺式辐射检测器的组装方法
JP3805031B2 (ja) 光電変換装置
US7117588B2 (en) Method for assembling tiled detectors for ionizing radiation based image detection
US7564112B2 (en) Semiconductor device, radiographic imaging apparatus, and method for manufacturing the same
JP2002333848A (ja) 複合アクティブマトリクス基板、その製造方法、及び電磁波撮像装置
US10345455B2 (en) Radiation detection apparatus, radiation imaging system, and method of manufacturing radiation detection apparatus
CN110121780A (zh) 基于柔性聚酰亚胺的x射线检测器的分离和再附接
JP2007071836A (ja) 放射線検出装置及び放射線撮像システム
CN110612605B (zh) 数字射线照相图像传感器
JPWO2019155813A1 (ja) 放射線検出器の製造方法および放射線検出器の製造装置
JP2015049121A (ja) 検出器モジュール製造方法、検出器モジュール及び医用画像診断装置
CN104124254A (zh) 放射线摄像装置及其制造方法以及放射线检查装置
KR20190054363A (ko) 곡면 디텍터의 제조방법 및 이 제조방법에 의해 제조된 곡면 디텍터
US20140138551A1 (en) X-ray Imaging Detector, Method for Manufacturing a Photosensitive Element and an X-ray Imaging Detector
JP2015057589A (ja) 放射線画像検出装置の製造方法
WO2019126061A1 (en) Detector architecture using photodetector arrays on thinned substrates
JP2006100762A (ja) 固体撮像装置の製造方法
RU136639U1 (ru) Устройство для сборки матричного фотоприемника
JP6305710B2 (ja) 検出器モジュール製造方法
US20170311912A1 (en) Mammography detector with small chest distance
JP2015049118A (ja) 検出器モジュール製造方法、検出器モジュール及び医用画像診断装置
JP2003255050A (ja) 放射線検出装置、その製造方法、放射線検出システム
JP2015200528A (ja) 放射線撮像装置およびその製造方法、並びに放射線撮像システム
KR20090090164A (ko) 대면적 ｘ선 검출장치의 제조 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180717