KR20180052531A - Apparatus for substrate wet processing - Google Patents

Apparatus for substrate wet processing Download PDF

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KR20180052531A
KR20180052531A KR1020170145349A KR20170145349A KR20180052531A KR 20180052531 A KR20180052531 A KR 20180052531A KR 1020170145349 A KR1020170145349 A KR 1020170145349A KR 20170145349 A KR20170145349 A KR 20170145349A KR 20180052531 A KR20180052531 A KR 20180052531A
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substrate
spray cleaning
tank
wet processing
processing apparatus
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KR1020170145349A
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Korean (ko)
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KR102003128B1 (en
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추안-창 펭
팅-유 우
웬-핑 차이
마오-린 리우
웨이-첸 리
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사이언테크 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Level Indicators Using A Float (AREA)
  • Weting (AREA)

Abstract

The present invention provides an apparatus for a substrate wet process, wherein the substrate wet process is performed on a substrate. The apparatus for the substrate wet process comprises: an impregnation processing tank performing an impregnation process with respect to the substrate; a spray washing processing tank including a substrate reversal stage; and a washing and drying tank washing and drying the substrate. The substrate is placed on the substrate reversal stage and subjected to a spray washing process.

Description

기판습식 처리장치{APPARATUS FOR SUBSTRATE WET PROCESSING}[0001] APPARATUS FOR SUBSTRATE WET PROCESSING [0002]

본 발명은 기판습식 처리장치에 관한 것이고, 기판에 대하여 습식처리과정을 진행하며, 습식처리과정은 함침처리과정, 분무세척처리과정 및 세척건조과정을 포함하고, 기판에서 분무세척처리과정은 기판을 반전 상태로 하는 기판습식 처리장치이다.The present invention relates to a substrate wet processing apparatus, wherein a wet processing process is performed on a substrate, and the wet processing process includes an impregnation process, a spray cleaning process, and a washing and drying process, And is in a reversed state.

반도체 제조과정에서, 기판(예하면 웨이퍼)에 대하여 여러 번의 청결과정 진행하여 기판표면의 잡질을 제거하는 것이 필요하다. 포토 리소그래피로 기판을 에칭하여 패턴을 형성한 후, 반드시 여러 번의 청결과정으로 포토 레지스트(Photo Resistor, PR) 또는 금속막(Metal Film)을 제거한다. 전통적인 제조과정은 배치로 기판을 처리하고 기판을 한꺼번에 동시에 처리하여 처리효과가 정확하지 않은 문제가 존재한다. 다른 전통적인 제조과정은 비록 단기판 수평식 처리를 사용하지만 세척단계에서 기판이 정방향 위치로 회전하여 세척할 때, 세척과정에서 기판과 세척액이 생성한 제거물 또는 박리물은 기판을 재오염파괴시킨다. 상술한 전통적인 제조과정에서 처리과정의 효과는 정확하지 않거나 기판 오염파괴 등 문제가 있어 종래의 기술을 개선할 필요가 있는 실정이다.During the semiconductor manufacturing process, it is necessary to clean the substrate surface (e.g., the wafer) several times to remove the surface of the substrate surface. After the substrate is etched by photolithography to form a pattern, the photoresist (PR) or the metal film (metal film) is removed by several cleaning processes. In the conventional manufacturing process, there is a problem that the processing effect is not accurate because the substrate is processed in batch and the substrate is simultaneously processed at the same time. Another conventional manufacturing process uses a short-term horizontal process, but when the substrate is rotated to the forward position during the cleaning step, the substrate or the substrate or the cleaning liquid produced by the cleaning liquid in the cleaning process causes the substrate to be re-contaminated. In the above-mentioned conventional manufacturing process, the effect of the process is not accurate or there is a problem such as destruction of the substrate contamination.

본 발명은 기판에 대하여 습식처리과정을 진행하고, 습식처리과정은 함침처리과정, 분무세척처리과정 및 세척건조과정을 포함하고, 기판에서 분무세척처리과정은 기판을 반전 상태로 하는 기판습식 처리장치이다.The present invention relates to a process for wet processing a substrate, a wet processing process including an impregnation process, a spray cleaning process, and a washing and drying process, wherein the spray cleaning process is a substrate wet process process to be.

이런 기판습식 처리장치는 기판에 대하여 습식처리과정을 진행하고, 습식처리과정은 함침처리과정, 분무세척처리과정 및 세척건조과정을 포함한다. 기판습식 처리장치는 함침처리탱크, 분무세척처리탱크 및 세척건조탱크를 포함하고, 함침처리탱크는 기판에 대하여 함침처리과정을 진행하고, 분무세척처리탱크sms 기판에 대하여 분무세척처리과정을 하며, 분무세척처리탱크는 기판 반전 스테이지를 포함하고, 기판은 기판 반전 스테이지에 놓으며, 세척건조탱크는 기판에 대하여 상기 세척건조과정을 진행하고, 처리과정 제어유닛은 함침처리탱크, 분무세척처리탱크 및 세척건조탱크를 전기적으로 연결하고, 처리과정 제어유닛은 기판이 기판습식 처리장치 내에서의 습식처리과정을 제어한다.Such a substrate wet processing apparatus performs a wet processing process on the substrate, and the wet processing process includes an impregnation process, a spray cleaning process, and a washing and drying process. The substrate wet processing apparatus includes an impregnation treatment tank, a spray cleaning treatment tank, and a washing and drying tank. The impregnation treatment tank performs an impregnation treatment process on the substrate, a spray cleaning process on the spray cleaning treatment tank sms substrate, The spray cleaning tank includes a substrate reversing stage, the substrate is placed on a substrate reversing stage, and the cleaning and drying tank carries out the washing and drying process with respect to the substrate, and the process control unit includes an impregnation treatment tank, The drying tank is electrically connected, and the processing control unit controls the wet processing process of the substrate in the substrate wet processing apparatus.

본 발명은 기판 분무세척처리과정에서 기판을 반전으로 탱크 내에 놓는 것을 통하여 분무세척처리를 하고, 분무세척과정에서 전통적인 기판의 비반전 상태에 비하면 제거물 또는 박리물을 더 쉽게 제거할 수 있으며 다시 붙는 등 문제를 방지한다.The present invention is based on the fact that the spray cleaning process is performed by placing the substrate in the tank in an inverted state in the substrate spray cleaning process and can more easily remove the removed material or exfoliated material in the spray cleaning process than the non- And the like.

본 발명은 함침처리탱크와 분무세척처리탱크를 같은 탱크본체의 기판습식 처리장치에 설치하여 전송시간을 감소하여 약액의 교차오염 발생을 피하는 것도 공개하였다.The present invention also discloses that the impregnation treatment tank and the spray cleaning treatment tank are installed in the same substrate wet processing apparatus of the tank body to reduce the transfer time to avoid cross contamination of the chemical solution.

본 발명은 함침처리탱크, 분무세척처리탱크 및 세척건조탱크를 같은 탱크본체의 기판습식 처리장치에 설치하여 습식처리과정에서 밀폐공간을 형성할 수 있어 전체 처리과정의 전송시간을 감소하고 약액의 교차오염 발생을 피하는 외에, 화학기체 발산의 문제를 방지할 수 있는 것도 공개하였다.In the present invention, the impregnation treatment tank, the spray cleaning tank, and the washing / drying tank are installed in the same substrate wet processing apparatus of the tank body to form a closed space in the wet treatment process, thereby reducing the transfer time of the entire treatment process, In addition to avoiding the occurrence of contamination, it has also been disclosed that the problem of chemical gas emission can be prevented.

본 발명은 세척건조과정에서 기판을 정방향 위치로 전환하여 세척건조 하여 세척건조 후의 탈이온수가 약액에 떨어져 오염되는 것을 방지하는 것도 공개하였다.The present invention also discloses that the substrate is switched to the forward position during the washing and drying process, and is then washed and dried to prevent the deionized water after washing and drying from being contaminated with the chemical liquid.

본 명세서 내에 포함되어 있음.Are included herein.

도 1A는 본 발명의 제1실시예에 따른 기판습식 처리장치의 설명도이다.
도 1B는 본 발명의 제1실시예에 따른 함침처리탱크에, 복수 개의 기판을 수직으로 담근 설명도이다.
도 1C는 본 발명의 제1실시예에 따른 함침처리탱크에, 복수 개의 기판을 수평으로 담근 설명도이다.
도 1D는 본 발명의 제1실시예에 따른 분무세척처리탱크의 설명도이다.
도 1E는 본 발명의 제1실시예에 따른 세척건조탱크에서 기판을 수직 처리하는 설명도이다.
도 1F는 본 발명의 제1실시예에 따른 세척건조탱크에서 기판을 수평 처리하는 설명도이다.
도 2는 본 발명의 제2실시예에 따른 기판에 함침하는 과정의 설명도이다.
도 3은 본 발명의 제2실시예에 따른 기판에 분무세척을 하는 과정의 설명도이다.
도 4는 본 발명의 제3실시예에 따른 설명도이다.
도 5는 본 발명의 제3실시예에 따른 세척건조탱크와 분무세척처리탱크가 상하 분리되어 기판 수출입구를 형성하는 설명도이다.
도 6은 본 발명의 제3실시예의 다른 설명도이다.
도 7은 본 발명의 제3실시예에 따른 기판에 세척건조를 하는 과정의 다른 설명도이다.
도 8은 본 발명의 제3실시예의 기판습식 처리장치의 작동 설명도이다.
도 9는 본 발명의 제3실시예의 기판습식 처리장치의 작동 설명도이다.1A is an explanatory diagram of a substrate wet processing apparatus according to a first embodiment of the present invention.
FIG. 1B is an explanatory view of a plurality of substrates vertically immersed in an impregnation treatment tank according to the first embodiment of the present invention. FIG.
FIG. 1C is an explanatory view of a plurality of substrates horizontally immersed in an impregnation treatment tank according to the first embodiment of the present invention. FIG.
1D is an explanatory diagram of a spray cleaning tank according to the first embodiment of the present invention.
FIG. 1E is an explanatory view for vertically treating a substrate in a cleaning and drying tank according to the first embodiment of the present invention. FIG.
FIG. 1F is an explanatory view for horizontally treating a substrate in a cleaning and drying tank according to a first embodiment of the present invention.
2 is an explanatory view of a process of impregnating a substrate according to a second embodiment of the present invention.
3 is an explanatory diagram of a process of spray cleaning the substrate according to the second embodiment of the present invention.
4 is an explanatory diagram according to a third embodiment of the present invention.
5 is an explanatory view of forming a substrate export inlet by vertically separating the washing and drying tank and the spray cleaning tank according to the third embodiment of the present invention.
6 is another explanatory diagram of the third embodiment of the present invention.
7 is another explanatory view of the process of washing and drying the substrate according to the third embodiment of the present invention.
8 is an operational explanatory view of the substrate wet processing apparatus of the third embodiment of the present invention.
9 is an operational explanatory view of the substrate wet processing apparatus of the third embodiment of the present invention.

귀 심사위원이 본 발명의 기술내용을 더 이해하게 하기 위하여, 아래와 같이 바람직한 구체적 실시예를 예로 들어 설명한다. 아래에 도 1을 참고하여 본 발명의 제1실시예에 따른 기판습식 처리장치의 설명도이다.In order to make your jury better understand the technical content of the present invention, the following preferred embodiments will be described as an example. 1 is an explanatory view of a substrate wet processing apparatus according to a first embodiment of the present invention with reference to FIG.

도 1A와 같이, 본 발명은 기판습식 처리장치(1)를 공개하였고, 기판(90)에 대하여 습식처리과정을 하고, 습식처리과정은 함침처리과정, 분무세척처리과정 및 세척건조과정을 포함한다. 본 발명의 실시예에 따라, 기판습식 처리장치(1)는 함침처리탱크(10), 분무세척처리탱크(20), 세척건조탱크(30) 및 처리과정 제어유닛(40)을 포함하고, 처리과정 제어유닛(40)은 함침처리탱크(10), 분무세척처리탱크(20) 및 세척건조탱크(30)를 전기적으로 연결하고, 처리과정 제어유닛(40)은 기판(90)이 기판습식 처리장치(1) 내에서 습식처리과정을 제어한다. As shown in FIG. 1A, the present invention discloses a substrate wet processing apparatus 1, and a wet processing process is performed on the substrate 90, and the wet processing process includes an impregnating process, a spray washing process, and a washing and drying process . According to an embodiment of the present invention, the substrate wet processing apparatus 1 includes an impregnation treatment tank 10, a spray cleaning treatment tank 20, a washing and drying tank 30 and a process control unit 40, The process control unit 40 electrically connects the impregnation treatment tank 10, the spray cleaning tank 20 and the washing and drying tank 30 and the process control unit 40 controls the substrate 90 And controls the wet processing process in the apparatus (1).

도 1A, 도 1B와 도 1C와 같이, 제1실시예에서, 함침처리탱크(10), 분무세척처리탱크(20)와 세척건조탱크(30)는 각자 독립적인 탱크본체이고, 처리과정 제어유닛(40)은 수송도구(41)를 더 포함하고, 기판(90)의 습식처리과정은 함침처리탱크(10), 분무세척처리탱크(20) 및 세척건조탱크(30)에서 각각 진행되고, 수송도구(41)로 기판(90)을 추출하여 함침처리탱크(10)에 먼저 넣어 약액의 함침처리과정을 한다. 여기서 주의할 것은 본 실시예에서, 처리과정 제어유닛(40)은 제어기 또는 컴퓨터로 실행하는 제어과정이고, 수송도구(41)은 기계적 암이지만 본 발명은 본 실시예에 한정되지 않는다.As shown in Figs. 1A, 1B and 1C, in the first embodiment, the impregnation treatment tank 10, the spray cleaning treatment tank 20 and the washing and drying tank 30 are independent tank bodies, The wet processing process of the substrate 90 proceeds in the impregnation treatment tank 10, the spray cleaning treatment tank 20 and the washing and drying tank 30, respectively, The substrate 90 is extracted with the tool 41 and placed in the impregnation treatment tank 10 to impregnate the chemical solution. Note that in this embodiment, the process control unit 40 is a control process executed by a controller or a computer, and the transportation tool 41 is a mechanical arm, but the present invention is not limited to this embodiment.

본 발명의 구체적인 실시예에 따라, 함침처리과정을 할 때, 제어처리액온도, 제어처리액 유동장 및 흔들림 기판(90)의 적어도 하나를 더 포함한다.According to a specific embodiment of the present invention, at the time of performing the impregnation process, at least one of the control process liquid temperature, the control process liquid flow field, and the shake substrate 90 is further included.

본 실시예에서, 함침처리과정은 도 1B와 같이, 함침처리탱크(10)는 복수 개의 수직으로 놓은 기판(90)을 수용할 수 있고, 도 1C와 같이, 함침처리탱크(10a)는 복수 개의 수평으로 놓은 기판(90)을 수용할 수 있으며, 복수 개의 기판 함침처리를 진행한다.1B, the impregnation treatment tank 10 may accommodate a plurality of vertically placed substrates 90, and the impregnation treatment tank 10a may contain a plurality of vertically disposed substrates 90, as shown in FIG. 1C, The substrate 90 placed horizontally can be accommodated, and a plurality of substrate impregnation processes are performed.

함침처리탱크(10)가 복수 개의 기판 함침처리를 할 때, 처리과정 제어유닛(40)은 각 기판(90)을 함침처리탱크(10)에 넣는 함침순서가 같거나 다른 도록 각각 제어한다. 처리과정 제어유닛(40)은 수송도구(41)로 각각의 기판(90)이 함침처리탱크(10)에서 함침처리과정을 각각 제어한다. 여기서, 같은 제조과정조건의 각각의 기판(90)은 각각 같은 함침처리시간을 경과한 후, 다시 분무세척처리탱크(20)에 순차적으로 이동된다. 각각의 기판(90)의 함침처리시간이 같기에 함침시간이 다름으로 인하여 조성되는 세척정도의 차이를 피할 수 있어 합격률을 높일 수 있다. 또한, 처리과정 제어유닛(40)은 제조과정의 요구에 의하여 서로 다른 제조과정조건의 복수 개의 기판(90)을 처리할 수 있다. 서로 다른 제조과정조건이 소요하는 함침처리시간은 서로 다르고, 처리과정 제어유닛(40)으로 각각의 기판(90)이 소요하는 특정의 함침처리시간을 각각 제어할 수 있다.When the impregnation treatment tank 10 performs a plurality of substrate impregnation treatments, the treatment process control unit 40 controls the impregnation procedures for inserting the substrates 90 into the impregnation treatment tank 10 are the same or different. The process control unit 40 controls each impregnation process in the impregnation tank 10 with each of the substrates 90 by the transport tool 41. [ Here, each of the substrates 90 in the same manufacturing process condition is sequentially moved to the spray cleaning processing tank 20 after the same impregnation processing time has elapsed. It is possible to avoid a difference in cleaning degree due to the different impregnation time since the impregnating treatment time of each substrate 90 is the same and the passing rate can be increased. In addition, the process control unit 40 can process a plurality of substrates 90 having different manufacturing process conditions according to the requirements of the manufacturing process. The impregnation processing time required for different manufacturing process conditions is different from each other, and the specific process time for the impregnation process required by each substrate 90 can be controlled by the process control unit 40, respectively.

또한, 각 기판(90)의 함침처리 소요시간이 분무세척처리 소요시간보다 크게 제어할 수 있어, 각 기판(90)상의 처리할 물체를 효과적으로 제거(예를 들면, 포토 레지스트 또는 금속막이 효과적으로 떨어질 수 있음)할 수 있다. 처리과정 제어유닛(40)은 함침처리과정의 소요시간과 분무세척처리과정의 소요시간의 시간차이 값에 의하여 각 기판(90)을 함침처리탱크(10)에 넣는 함침순서를 스케쥴링할 수 있다. 각 기판(90) 처리의 선후순서는 제1기판, 제2기판을 예로 들고, 제1기판, 제2기판을 함침처리탱크(10)에 넣어 각각 진행하는 함침처리과정을 선후로 스케쥴링하고, 제1기판이 담금 완료 후, 분무세척처리탱크(20)에 이송하고, 제2기판의 담금 완료를 할 때, 제1기판은 이미 분무세척 완료를 하여 다음 과정(예를 들면, 세척건조탱크(30))으로 이송된다. 따라서, 처리과정 제어유닛(40)은 함침처리탱크(10)에서 직접 제2기판을 추출하여 분무세척처리탱크(20)에 이송할 수 있어, 어떠한 방해도 받지 않으며, 각 기판(90)의 함침처리시간을 효과적으로 제어할 수 있다.In addition, the time required for the impregnation treatment of each substrate 90 can be controlled to be greater than the time required for spray cleaning, thereby effectively removing an object to be treated on each substrate 90 (for example, . The process control unit 40 can schedule the impregnation procedure in which each substrate 90 is put into the impregnation tank 10 according to the time difference between the time required for the impregnation process and the time required for the spray cleaning process. The first substrate and the second substrate are taken as an example of the order of the process of each substrate 90, and the first substrate and the second substrate are put into the impregnation tank 10 to sequentially perform the impregnation process, 1 substrate is transferred to the spray cleaning tank 20 after the completion of immersion and the first substrate is already subjected to spray cleaning and the next process (for example, cleaning / drying tank 30 ). Therefore, the process control unit 40 can extract the second substrate directly from the impregnation tank 10 and transfer it to the spray cleaning tank 20, so that the impregnation of each substrate 90 The processing time can be effectively controlled.

도 1A와 같이, 함침처리과정을 완료한 후, 수송도구(41)는 기판(90)을 추출하여 분무세척처리탱크(20)에 넣는 분무세척처리과정을 하고, 도 1D와 같이, 이때, 기판(90)을 분무세척처리탱크(20)의 기판 반전 스테이지(21)에 놓는다. 본 발명의 구체적인 실시예에 따라, 기판 반전 스테이지(21)에는 기판고정부재 (미도시)가 설치되어 있어 기판(90)을 고정하여 반전으로 분무세척처리과정을 한다. 분무세척처리탱크(20)에는 적어도 회수유닛(22, 22a)이 설치되어 있고, 여기서, 처리액 노즐(80)은 분무세척처리액(100)을 제공하고, 기판 반전 스테이지(21)는 기판(90)의 회전상태를 고정하에, 기판(90)에 대하여 분무세척하고, 회수유닛(22, 22a)으로 분무세척처리액(100)을 회수한다.As shown in FIG. 1A, after the impregnation process is completed, the transportation tool 41 performs a spray cleaning process of extracting the substrate 90 and putting it into the spray cleaning tank 20. Then, as shown in FIG. 1D, (90) is placed on the substrate reversing stage (21) of the spray cleaning treatment tank (20). According to a specific embodiment of the present invention, a substrate fixing member (not shown) is provided on the substrate reversing stage 21 to fix the substrate 90 and carry out a spray cleaning process in reverse. The spray cleaning tank 20 is provided with at least a collection unit 22 or 22a in which the treatment liquid nozzle 80 provides the spray cleaning solution 100 and the substrate inversion stage 21 is connected to the substrate 90 to the substrate 90, and the spray cleaning solution 100 is recovered by the recovery unit 22, 22a.

도 1D와 같이, 복수 개의 회수유닛(22, 22a)을 설치할 수 있고, 여기서, 처리액 노즐(80)은 서로 다른 분무세척처리액(100)을 제공할 수 있고, 개별적 분무세척처리액에 대응하는 회수유닛(22) 또는 회수유닛(22a)으로 서로 다른 분무세척처리액을 대응하게 회수한다.1D, a plurality of recovery units 22 and 22a can be provided. Here, the treatment liquid nozzle 80 can provide different spray cleaning treatment liquids 100, and can respond to individual spray cleaning treatment liquids The recovery unit 22a or the recovery unit 22a that collects the different spray cleaning solution.

본 발명의 실시예에 따라, 기체분무세척유닛(미도시)을 포함하고, 분무세척처리탱크(20) 및 함침처리탱크(10)의 적어도 하나의 위쪽에 설치하고, 상기 기판(90)에 대하여 탱크본체를 빼낼 때, 기체분무세척을 하여 기판(90)상의 잔액을 분무제거 할 수 있어 진일보로 잔액의 잔류량을 감소한다. 기체분무세척유닛은 탱크본체 위쪽 또는 탱크벽의 위쪽에 설치할 수 있고, 본 발명은 한정하지 않는다.(Not shown) and is disposed above at least one of the spray cleaning treatment tank 20 and the impregnation treatment tank 10, and is provided on the substrate 90 When the tank main body is taken out, the gas spray cleaning is performed to spray off the remaining liquid on the substrate 90, thereby reducing the remaining amount of the remaining amount of liquid. The gas spray cleaning unit can be installed above the tank body or above the tank wall, but the present invention is not limited thereto.

기판(90)이 약액에 의하여 분무세척처리 후, 수송도구(41)는 다시 기판(90)을 추출하여 세척건조탱크(30)에 넣고, 처리액(예를 들면, 탈이온수)으로 세척건조과정을 하여 기판(90)의 습식처리과정을 완료하고, 도 1E와 같이, 기판(90)은 세척건조탱크(30)내에 똑바로 놓아져 세척건조과정을 한다. 본 발명의 구체적인 실시예에 따라, 도 1F와 같이, 기판(90)은 세척건조탱크(30a)내 수평으로 놓아져 세척 및 회전건조를 하여 세척건조과정을 한다.After the substrate 90 is spray-cleaned by the chemical liquid, the transportation tool 41 again extracts the substrate 90, places it in the cleaning / drying tank 30, and performs a cleaning / drying process with a treatment liquid (for example, deionized water) The wet processing of the substrate 90 is completed, and the substrate 90 is placed in the washing / drying tank 30 as shown in FIG. According to a specific embodiment of the present invention, as shown in FIG. 1F, the substrate 90 is placed horizontally in the washing and drying tank 30a, and is washed and dried by rotation and drying.

도 2와 도3은 본 발명의 제2실시예의 설명도이고, 제2실시예에서 기판습식 처리장치(1a)의 함침처리탱크(10c)와 분무세척처리탱크(20)은 동일한 탱크본체이고, 함침처리탱크(10c)는 분무세척처리탱크(20)의 아래에 위치하며, 처리과정 제어유닛(40)으로 함침처리과정을 완료하는 기판(90)이 함침처리탱크(10c)에 의하여 분무세척처리탱크(20)에 상승하여 넣는 것을 제어하여 분무세척과정을 계속하여 진행한다. 2 and 3 are explanatory views of the second embodiment of the present invention. In the second embodiment, the impregnation treatment tank 10c and the spray cleaning treatment tank 20 of the substrate wet processing apparatus 1a are the same tank body, The impregnation treatment tank 10c is located below the spray cleaning treatment tank 20 and the substrate 90 which completes the impregnation treatment process by the treatment process control unit 40 is subjected to spray cleaning treatment So that it is controlled to be lifted up into the tank 20 to continue the spray cleaning process.

본 발명의 구체적인 실시예에 따라, 도 2와 같이, 기판습식 처리장치(1a)에는 스테이지 구동모듈(60)이 설치되어 있고, 스테이지 구동모듈(60)과 기판 반전 스테이지(21)는 전기적으로 연결되며 기판 반전 스테이지(21)를 하강하여 함침처리탱크(10c)에 넣고 기판(90)에 대하여 함침처리과정을 하고, 함침처리과정을 완료한 후, 스테이지 구도모듈(60)은 기판 반전 스테이지(21)를 상승하여 분무세척처리탱크(20)에 넣어, 기판(90)에 대하여 분무세척처리과정을 한다. 본 실시예에서, 스테이지 구동모듈(60)은 구동모터이지만, 본 발명은 이에 한정되지 않고, 기타 기판 반전 스테이지(21)을 구동하는 장치는 모두 적용할 수 있다.2, a stage driving module 60 is provided in the substrate wet processing apparatus 1a, and the stage driving module 60 and the substrate reversing stage 21 are electrically connected to each other After the substrate reversing stage 21 is lowered into the impregnation treatment tank 10c and the substrate 90 is impregnated and the impregnation process is completed, Is raised to the spray cleaning tank 20, and the substrate 90 is subjected to the spray cleaning process. In this embodiment, the stage driving module 60 is a driving motor, but the present invention is not limited to this, and any other apparatus for driving the substrate reversing stage 21 can be applied.

도 2와 같이, 함침처리과정을 진행할 때, 스테이지 구동모듈(60)은 기판 반전 스테이지(21)를 하강하여 함침처리탱크(10c)에 넣고 기판(90)에 대하여 함침처리과정을 하고, 본 실시예의 함침처리탱크(10c)는 내탱크구(11)와 외팅크구(12)로 나눌 수 있고, 스테이지 구동모듈(60)이 기판 반전 스테이지(21)를 구동하여, 기판(90)을 내탱크구(11)의 담금약액(200)내에 반전으로 진입시킬 때, 담금약액(200)은 내탱크구(11)에서 외탱크구(12)로 넘쳐나 약액순환을 하고, 순환적으로 온도제어를 할 수 있다. 실시예에 따라, 기판 반전 스테이지(21)는 기판(90)의 회전상태를 고정하에서, 이때, 기판(90)은 회전하여 담금약액(200)의 영향 및 온도처리를 균일하게 받을 수 있고, 함침처리과정을 완료한 후, 스테이지 구동모듈(60)은 기판 반전 스테이지(21)를 구동시켜 상승하여 담금약액(200)에서 벗어진다. 2, the stage driving module 60 moves the substrate reversing stage 21 downward into the impregnation treatment tank 10c to impregnate the substrate 90 with the impregnation treatment process, The exemplary impregnation treatment tank 10c can be divided into an inner tank opening 11 and an outer toughening opening 12. The stage driving module 60 drives the substrate reversing stage 21 to move the substrate 90 to the inside tank The immersion liquid 200 floats from the inner tank opening 11 to the outer tank opening 12 and performs the chemical liquid circulation and performs the temperature control cyclically . According to the embodiment, the substrate reversing stage 21 can rotate the substrate 90 while the rotation state of the substrate 90 is fixed. At this time, the substrate 90 can uniformly receive the effect of the immersion liquid 200 and the temperature treatment, After completing the process, the stage driving module 60 drives the substrate reversing stage 21 to rise and escape from the immersion liquid 200.

본 발명의 구체적인 실시예에 따라, 함침처리과정을 할 때, 제어처리액(담금액체(200))온도, 제어처리액(담금액체(200)) 유동장 및 흔들림 기판(90)의 적어도 하나를 포함하고, 함침처리과정을 완료한 후, 도 3과 같이, 스테이지 구동모듈(60)은 기판 반전 스테이지(21)를 상승하여 분무세척처리탱크(20)에 넣고 기판(90)에 대하여 분무세척처리과정을 한다.(Immersion liquid 200) temperature, the control liquid (immersion liquid 200) flow field, and the wobble substrate 90 when the immersion process is performed according to a specific embodiment of the present invention 3, the stage driving module 60 raises the substrate reversing stage 21 into the spray cleaning tank 20 and performs a spray cleaning process on the substrate 90 .

도 3에 따라, 분무세척처리탱크(20)는 적어도 회전유닛(22, 22a)을 설치하여 분무세척처리액(100)을 회수하고, 회수유닛(22, 22a)에서 회수하지 못한 분무세척처리액(100)은 분무세척처리탱크(20) 아래에 위치한 함침처리탱크(10c)에 떨어진다. 여기서, 기판회전속도를 향상시켜 분무세척처리액(100)이 분무세척 후, 원심력의 회전으로 회수유닛(22, 22a) 내에 회수되게 한다. 3, the spray cleaning tank 20 is provided with at least the rotation units 22 and 22a to recover the spray cleaning solution 100 and to remove the spray cleaning solution 100 that has not been recovered in the recovery units 22 and 22a (100) falls into the impregnation treatment tank (10c) located below the spray cleaning treatment tank (20). Here, the rotation speed of the substrate is improved so that the spray cleaning solution 100 is recovered into the recovery unit 22, 22a after the spray cleaning, by the rotation of the centrifugal force.

본 발명의 구체적인 실시예에 따라, 도 3을 참고하면, 분무세척처리액(100)과 담금약액(200)은 같은 성분의 처리액(예를 들면, 같은 배치의 같은 처리액, 또는 신구의 같은 처리액)이고, 따라서 회수유닛(22, 22a)에 회수하지 못한 분무세척처리액(100)은 분무세척처리탱크(20) 아래에 위치한 함침처리탱크(10c)에 떨어지고, 분무세척처리액(100)은 담금약액(200)에 혼합되어 계속 사용되기에 처리액 교차오염의 문제가 없다.According to a specific embodiment of the present invention, referring to FIG. 3, the spray cleaning liquid 100 and the immersion liquid 200 may be treated with the same treatment liquid (for example, the same treatment liquid in the same batch, The spray cleaning liquid 100 that has not been recovered to the recovery unit 22 or 22a falls to the impregnation treatment tank 10c located below the spray cleaning treatment tank 20 and the spray cleaning treatment liquid 100 Is mixed with the immersion liquid chemical 200 and continues to be used, there is no problem of cross contamination of the treatment liquid.

본 발명의 구체적인 실시예에 따라, 습식처리과정은 함침전 분무세척처리과정을 더 포함하고, 함침전 분무세척처리과정을 할 때, 처리과정 제어유닛(40)은 기판(90)을 기판 반전 스테이지(21)에 넣어 함침전 분무세척처리과정을 한 후, 스테이지 구동모듈(60)은 다시 기판(90)을 하강하여 함침처리탱크(10c)에 넣는다.According to a specific embodiment of the present invention, the wet processing process further includes an impregnation spray cleaning process. When performing the impregnation spray cleaning process, the process control unit 40 transfers the substrate 90 to the substrate reversal stage The stage driving module 60 descends the substrate 90 again and inserts the substrate 90 into the impregnation treatment tank 10c.

분무세척처리과정을 완료한 후, 스테이지 구동모듈(60)은 분무세척처리과정을 완료한 기판(90)과 기판 반전 스테이지(21)를 상승하여 세척건조탱크(30)에 넣어 세척건조과정을 하고, 기판(90)은 세척건조탱크(30) 내에서 처리액(예를 들면, 탈이온수(300))으로 분무세척하고, 파이프가 세척후의 탈이온수(300)를 배출한 후, 다시 질소 분무세척건조 고속회전건조를 진행할 수 있다. 본 발명의 실시예에서, 세척건조탱크(30)가 탱크내에서 휘발성 액체를 공급하여 건조세척하고, 예를 들면, 기판(90)이 표면 구조성 기판이면, 바람직한 세척효과가 있을 수 있다.After completing the spray cleaning process, the stage driving module 60 raises the substrate 90 and the substrate reversing stage 21 that have completed the spray cleaning process, and puts the substrate in the cleaning and drying tank 30 to perform a washing and drying process , The substrate 90 is spray-washed with a treatment liquid (for example, deionized water 300) in the washing / drying tank 30, and after the pipe discharges the deionized water 300 after washing, Drying and high-speed spin drying can be performed. In an embodiment of the present invention, if the cleaning and drying tank 30 supplies volatile liquid in the tank to dry clean, for example, if the substrate 90 is a surface structured substrate, then there can be a desirable cleaning effect.

도 4에서 도 9는 본 발명의 제3실시예의 설명도이고, 기판습식 처리장치의 함침처리탱크(10c), 분무세척처리탱크(20)와 세척건조탱크(30)는 모두 동일한 탱크본체이고, 분무세척처리탱크(20)와 세척건조탱크(30)가 동일한 탱크본체의 서로 다른 회수유닛일 때, 습식처리과정에 있어서 밀폐공간을 형성할 수 있다.4 to 9 are explanatory views of the third embodiment of the present invention. The impregnation treatment tank 10c, the spray cleaning treatment tank 20 and the washing and drying tank 30 of the substrate wet treatment apparatus are both the same tank body, When the spray cleaning tank 20 and the washing / drying tank 30 are different collection units of the same tank body, a sealed space can be formed in the wet treatment process.

도 4와 같이, 분무세척처리과정을 완료한 후, 스테이지 구동모듈(60)은 분무세척처리과정을 완료한 기판(90)과 기판 반전 스테이지(21)를 상승하여 세척건조탱크(30)에 넣고, 상기 기판(90)에 대하여 탈이온수(300)로 분무세척하고, 회수유닛(22b)으로 회수한다. 본 발명의 실시예에 따라, 기판(90)을 정방향 위치로 전환하여 세척건조과정을 하여 세척건조 후에 탈이온수(300)가 분무세척처리탱크(20)에 떨어져 조성하는 오염을 방지할 수 있다. 이 단계에서, 기판 반전 스테이지(21)이 정방향 위치로 전환하는 순서는 세척건조탱크(30)에 넣기 전 또는 넣은 후 일 수 있다.4, after completing the spray cleaning process, the stage driving module 60 raises the substrate 90 and the substrate reversing stage 21 that have completed the spray cleaning process, and puts the substrate 90 in the cleaning / drying tank 30 , Washing the substrate (90) with deionized water (300), and recovering it to the recovery unit (22b). According to the embodiment of the present invention, it is possible to prevent the contamination of the deionized water 300 formed in the spray cleaning tank 20 after washing and drying by switching the substrate 90 to the forward position. In this step, the order in which the substrate reversing stage 21 is switched to the forward position may be before or after being placed in the washing and drying tank 30.

도 5와 같이, 세척건조탱크(30)와 분무세척처리탱크(20)는 상하 분리되어, 기판(90) 수출입구를 형성하는 설명도이다. 예를 들면, 세척건조과정이 종료한 후, 세척건조탱크(30)는 상승하여 기판습식 처리과정을 완료한다.As shown in Fig. 5, the washing / drying tank 30 and the spray cleaning tank 20 are separated upward and downward to form an entrance for exporting the substrate 90. As shown in Fig. For example, after the washing / drying process is completed, the washing / drying tank 30 rises to complete the substrate wet processing process.

본 발명의 구체적인 실시예에 따라, 도 6과 같이 기판습식 처리장치(1b)는 세척건조탱크(30)의 회수유닛(31)을 분무세척처리탱크(20)의 회수유닛(22, 22a)의 인근에 설치하고, 분무세척처리과정을 할 때, 처리액 노즐(80)은 분무세척처리액(100)을 사용하여 기판(90)에 대하여 분무세척하고, 적어도 회수유닛(22, 22a)으로 분무세척처리액(100)을 회수한다. 분무세척처리과정을 종료한 후, 도 7과 같이 스테이지 구동모듈(60)은 분무세척처리과정을 완료한 기판(90) 및 기판 반전 스테이지(21)를 세척건조탱크(30)의 회수유닛(31)으로 탈이온수(300)를 회수하는 위치로 상승시켜 다음 단계의 세척건조과정을 진행하고, 회수유닛(31)으로 세척건조 후의 탈이온수(300)를 회수한다. 본 실시예의 설명 및 도는 비록 기판 반전 스테이지(21)의 승강으로 분무세척처리과정 및 세척건조과정을 예로 들었지만, 이 실시방식에 한정되지 않으며, 예를 들면, 각 회수유닛(22, 22a, 31) 등을 승강하는 방식을 통하여 동일한 탱크 내에서 분무세척처리과정 및 세척건조과정을 완료한다. 회수유닛의 형식 및 구동방법이 본 발명의 수정 중점이 아니기에 여기서 더 이상 설명하지 않는다.As shown in FIG. 6, the substrate wet processing apparatus 1b includes a recovery unit 31 of the cleaning and drying tank 30 and a recovery unit 32 of the recovery unit 22, 22a of the spray cleaning treatment tank 20, The processing solution nozzle 80 is spray-cleaned on the substrate 90 by using the spray cleaning solution 100 and is sprayed to at least the recovery unit 22 and 22a The washing treatment liquid 100 is recovered. 7, the stage driving module 60 transfers the substrate 90 and the substrate reversing stage 21, which have completed the spray cleaning process, to the recovery unit 31 of the cleaning and drying tank 30 The deionized water 300 is returned to the position where the deionized water 300 is recovered, the washing and drying process of the next step is performed, and the deionized water 300 after the washing and drying process is recovered by the recovery unit 31. Although the spray cleaning process and the washing and drying process are exemplified as the lifting and lowering of the substrate reversing stage 21, the description and the drawings of this embodiment are not limited to this embodiment. For example, the recovery units 22, 22a, The spray cleaning process and the washing and drying process are completed in the same tank. The format and drive method of the recovery unit is not a modification focus of the present invention and will not be described here any further.

본 발명의 구체적인 실시예에서, 도 8, 도 9와 같이, 기판습식 처리장치(1c)의 함침처리탱크(10), 분무세척처리탱크(20)와 세척건조탱크(30)은 모두 동일한 탱크본체이고, 분무세척처리탱크(20)와 세척건조탱크(30)은 동일한 탱크본체의 서로 다른 회수유닛(각 회수유닛은 도 4, 도 5의 예를 참고)이고, 습식처리과정에 있어서 밀폐공간을 형성할 수 있고, 기판습식 처리장치(1c)는 탱크본체 제어유닛(901)을 포함하고, 탱크본체 제어유닛(901)은 세척건조탱크(30)와 분무세척처리탱크(20)를 제어하여 밀폐(도 9) 또는 분리(도 8)를 형성할 수 있고, 세척건조탱크(30)와 분무세척처리탱크(20)가 밀폐일 때, 기판(90)은 세척건조탱크(30)에서 세척건조 될 수 있어 세척액이 장치 외로 분무되는 것을 방지하며 화학기체가 발산되는 문제를 방지하고, 세척건조탱크(30)와 분무세척처리탱크(20)가 분리될 때, 기판 수출입구(902)를 형성할 수 있고, 기판(90)은 기판 수출입구(902)에 의하여 단 기판습식 처리장치(1c)를 수출입 한다. 본 발명의 구체적인 실시예에 따라, 탱크본체 제어유닛(901)은 구동모터 또는 기계적 암일 수 있지만, 본 발명은 이 실시방식에 한정되지 않는다.8 and 9, the impregnation treatment tank 10, the spray cleaning treatment tank 20, and the washing and drying tank 30 of the substrate wet processing apparatus 1c are both provided in the same tank body 1c, And the spray cleaning tank 20 and the washing / drying tank 30 are different collecting units of the same tank body (each collecting unit is the example of FIG. 4 and FIG. 5) And the substrate wet processing apparatus 1c includes a tank main body control unit 901 and the tank main body control unit 901 controls the washing and drying tank 30 and the spray cleaning tank 20, (Fig. 9) or separation (Fig. 8), and when the washing and drying tank 30 and the spray cleaning tank 20 are sealed, the substrate 90 is washed and dried in the washing and drying tank 30 Thereby preventing the cleaning liquid from being sprayed to the outside of the apparatus, preventing the problem of the chemical gas from being emitted, When the processing tank 20 is separated, a substrate export inlet 902 can be formed and the substrate 90 exports and imports the single substrate wet processing apparatus 1c by the substrate export inlet 902. According to a specific embodiment of the present invention, the tank body control unit 901 may be a drive motor or a mechanical arm, but the present invention is not limited to this embodiment.

도 8과 도9와 같이, 기판 반전 스테이지(21) 반전 위치(P1) 및 정방향 위치(P2)를 포함하고, 여기서 기판 반전 스테이지(21)는 스테이지 구동모듈(60)에 의하여 기판 반전 스테이지(21)를 구동하여 반전 위치(P1) 및 정방향 위치(P2)간을 뒤집는다. 기판습식 처리장치(1c)가 기판(90)에 대하여 함침처리과정 및 분무세척처리과정을 할 때, 기판 반전 스테이지(21)는 반전 위치(P1)로 되고, 기판습식 처리장치(1c)가 기판(90)에 대하여 세척건조과정을 할 때, 기판 반전 스테이지(21)은 정방향 위치(P2)가 된다. 본 실시예는 기판습식 처리장치를 동일한 탱크에 병합하여 진행하면, 습식처리과정의 처리시간을 축소하는 외에, 기판(90)이 복수 개의 탱크에서 전환할 때, 조성하는 분무세척처리액(100) 또는 담금약액(200)의 누수상황을 감소하여 습식처리과정 전환시, 처리액의 서로 오염 및 화학기체의 발산 등 문제를 해결하였다.8 and 9, the substrate inversion stage 21 includes an inversion position P1 and a forward position P2, in which the substrate inversion stage 21 is moved by the stage inversion module 21 ) To turn over between the inversion position P1 and the forward position P2. When the substrate wet processing apparatus 1c performs the impregnating process and the spray cleaning process on the substrate 90, the substrate reversing stage 21 is set to the reversing position P1 and the substrate wet processing apparatus 1c is moved to the substrate The substrate inversion stage 21 becomes the forward position P2 when performing the washing and drying process with respect to the substrate reversing stage 90. In this embodiment, when the substrate wet processing apparatus is incorporated in the same tank, it is possible to reduce the processing time of the wet processing process. In addition, the spray cleaning processing liquid 100, which is formed when the substrate 90 is switched in a plurality of tanks, Or the immersion liquid chemical (200), thereby solving the problems such as mutual contamination of the treatment liquid and divergence of the chemical gas when the wet treatment process is changed.

1, 1a, 1b, 1c: 기판습식 처리장치
10, 10a, 10c: 함침처리탱크
20: 분무세척처리탱크
21: 기판 반전 스테이지
30: 세척건조탱크
40: 처리과정 제어유닛
41: 수송도구
60: 스테이지 구동모듈
22, 22a, 22b, 31: 회수유닛
80: 처리액 노즐
801: 분무세척유닛
90: 기판
901: 탱크본체 제어유닛
902: 기판수출입구
P1: 반전 위치
P2: 정방향 위치
200: 담금약액
300: 이온수
100: 분무세척액 1, 1a, 1b, 1c: substrate wet processing apparatus
10, 10a, 10c: Impregnation treatment tank
20: Spray cleaning treatment tank
21: substrate inversion stage
30: Washing and drying tank
40: process control unit
41: Transportation equipment
60: stage driving module
22, 22a, 22b, 31: collection unit
80: Treatment liquid nozzle
801: Spray cleaning unit
90: substrate
901: tank body control unit
902: Substrate export entrance
P1: Reverse position
P2: Forward position
200: Immersion liquid
300: ionized water
100: Spray washing liquid

Claims (20)

기판에 대하여 습식처리과정을 진행하고, 상기 습식처리과정은 함침처리과정, 분무세척처리과정 및 세척건조과정을 포함하는 기판습식 처리장치에 있어서,
상기 기판에 대하여 상기 함침처리과정을 진행하는 함침처리탱크;
분무세척처리탱크;
상기 기판에 대하여 상기 세척건조과정을 진행하는 세척건조탱크; 및
상기 함침처리탱크, 상기 분무세척처리탱크 및 상기 세척건조탱크를 전기적으로 연결하는 처리과정 제어유닛
을 포함하고,
상기 분무세척처리탱크는 기판 반전 스테이지를 포함하고, 상기 기판은 상기 기판 반전 스테이지에 놓고, 상기 기판에 대하여 상기 분무세척처리과정을 하고,
상기 처리과정 제어유닛은 상기 기판이 상기 기판습식 처리장치 내에서의 습식처리과정을 제어하는
기판습식 처리장치.1. A substrate wet processing apparatus comprising: a substrate; a wet processing unit for performing a wet processing process on the substrate, wherein the wet processing process includes an impregnation process, a spray cleaning process and a washing and drying process,
An impregnating treatment tank for carrying out the impregnating process with respect to the substrate;
A spray cleaning treatment tank;
A washing and drying tank for washing and drying the substrate; And
A process control unit for electrically connecting the impregnation treatment tank, the spray cleaning tank,
/ RTI >
Wherein the spray cleaning tank comprises a substrate reversal stage, the substrate is placed on the substrate reversal stage, the spray cleaning process is performed on the substrate,
The process control unit controls the process of the wet process in the substrate wet processing apparatus
Substrate wet processing apparatus. 제1항에 있어서,
상기 함침처리탱크는 복수의 상기 기판을 수용할 수 있고, 상기 함침처리탱크가 상기 함침처리과정을 진행할 때, 상기 처리과정 제어유닛은 각 상기 기판을 상기 함침처리탱크에 넣는 함침순서를 각각 제어하는
기판습식 처리장치.The method according to claim 1,
The impregnation treatment tank may contain a plurality of the substrates, and when the impregnation treatment tank performs the impregnation process, the process control unit controls each of the impregnation procedures for inserting the respective substrates into the impregnation treatment tank
Substrate wet processing apparatus. 제2항에 있어서,
상기 처리과정 제어유닛은 각 상기 기판이 상기 함침처리탱크에 진출하는 순서를 각각 제어하는
기판습식 처리장치.3. The method of claim 2,
The process control unit controls each of the substrates to advance into the impregnation treatment tank
Substrate wet processing apparatus. 제3항에 있어서,
상기 처리과정 제어유닛은 각 상기 기판의 상기 함침처리시간이 같도록 제어하고, 각 상기 기판을 각각 상기 함침처리탱크에 넣는 것을 스케쥴링 하여 상기 함침처리과정을 진행하는
기판습식 처리장치.The method of claim 3,
The process control unit controls the impregnating process time of each of the substrates to be the same, schedules each of the substrates to be immersed in the impregnation treatment tank, and proceeds with the impregnation process
Substrate wet processing apparatus. 제3항에 있어서,
상기 처리과정 제어유닛은 각 상기 기판에 대한 함침처리과정의 시간이 다른 것을 각각 제어하고, 각 상기 기판을 상기 함침처리탱크에 넣는 것을 스케쥴링 하여 상기 함침처리과정을 진행하는
기판습식 처리장치.The method of claim 3,
The process control unit controls the impregnation process time of each of the substrates to be different from each other and schedules each substrate into the impregnation treatment tank to perform the impregnation process
Substrate wet processing apparatus. 제2항에 있어서,
상기 기판의 상기 함침처리과정 소요시간이 상기 분무세척처리 소요시간보다 큰데 대하여, 상기 처리과정 제어유닛은 상기 함침처리과정 소요시간과 상기 분무세척처리과정 소요시간의 시간차이 값에 의하여 각 상기 기판을 상기 함침처리탱크에 넣는 상기 함침순서를 스케쥴링하는
기판습식 처리장치.3. The method of claim 2,
The time required for the impregnation process of the substrate is larger than the time required for the spray cleaning process, the process control unit controls each substrate by the time difference between the time required for the impregnation process and the time required for the spray cleaning process The impregnation sequence to be placed in the impregnation treatment tank is scheduled
Substrate wet processing apparatus. 제1항에 있어서,
상기 함침처리탱크와 상기 분무세척처리탱크는 동일한 탱크본체이고, 상기 함침처리탱크는 상기 분무세척처리탱크의 아래에 위치하고, 상기 처리과정 제어유닛은 상기 함침처리과정의 상기 기판의 상승으로 상기 분무세척처리탱크에 넣어 완료하는
기판습식 처리장치.The method according to claim 1,
Wherein the impregnation treatment tank and the spray cleaning tank are the same tank body, the impregnation treatment tank is located below the spray cleaning treatment tank, and the process control unit controls the spray cleaning To be completed in the treatment tank
Substrate wet processing apparatus. 제7항에 있어서,
분무세척 처리액을 사용하여 상기 기판에 대하여 상기 분무세척처리를 하면, 상기 분무세척 처리액은 상기 분무세척처리탱크 아래에 위치하는 상기 함침처리탱크에 떨어져 회수되는
기판습식 처리장치.8. The method of claim 7,
When the spray cleaning process is performed on the substrate using the spray cleaning solution, the spray cleaning solution is collected and returned to the impregnation treatment tank located below the spray cleaning treatment tank
Substrate wet processing apparatus. 제7항에 있어서,
상기 분무세척처리탱크는 회수유닛을 포함하고,
분무세척 처리액을 사용하여 상기 기판에 대하여 상기 분무세척처리를 하고, 상기 회수유닛으로 상기 분무세척 처리액을 회수하며, 상기 회수유닛에 분무되지 않은 상기 분무세척 처리액은 상기 분무세척처리탱크의 아래에 위치한 상기 함침처리탱크에 떨어져 회수되는
기판습식 처리장치.8. The method of claim 7,
Wherein the spray cleaning tank comprises a collection unit,
The spray cleaning process liquid is used to perform the spray cleaning process on the substrate, and the spray cleaning process liquid is recovered to the recovery unit, and the spray cleaning process liquid not sprayed to the recovery unit is supplied to the spray cleaning process tank Is returned to the impregnation treatment tank located below
Substrate wet processing apparatus. 제7항에 있어서,
상기 기판을 상기 기판 반전 스테이지에 놓으면, 상기 기판습식 처리장치는 플랫폼 구동모듈을 더 포함하고,
상기 기판 반전 스테이지를 하강하여 상기 함침처리탱크에 넣어 상기 기판에 대하여 상기 함침처리과정을 하고, 상기 함침처리과정을 완료한 후, 플랫폼 구동모듈은 상기 기판 반전 스테이지를 상승하여 상기 분무세척처리탱크에 넣어 상기 기판에 대하여 상기 분무세척처리과정을 하는
기판습식 처리장치.8. The method of claim 7,
When the substrate is placed on the substrate reversing stage, the substrate wet processing apparatus further includes a platform driving module,
The substrate reversing stage is lowered and placed in the impregnation treatment tank to perform the impregnation process on the substrate. After completing the impregnation process, the platform driving module moves up the substrate reversal stage to the spray cleaning tank And the spray cleaning process is performed on the substrate
Substrate wet processing apparatus. 제10항에 있어서,
상기 습식처리과정은 함침전 분무세척처리과정을 더 포함하고,
상기 처리과정 제어유닛은 상기 기판을 상기 기판 반전 스테이지에 넣어 상기 함침전 분무세척처리과정을 한 후, 상기 플랫폼 구동모듈은 상기 기판 반전 스테이지를 하강시켜 상기 함침처리탱크에 넣어 상기 기판에 대하여 상기 함침처리과정을 하는
기판습식 처리장치.11. The method of claim 10,
The wet treatment process may further comprise a precipitation spray cleaning process,
The process control unit controls the substrate reversal stage to be lowered to the impregnation treatment tank after the substrate driving module performs the impregnation spray cleaning process by inserting the substrate into the substrate reversal stage, Process
Substrate wet processing apparatus. 제7항에 있어서,
상기 분무세척처리탱크는 복수 개의 처리액 노즐을 포함하여 서로 다른 분무세척처리액을 제공하는데 대응하는
기판습식 처리장치.8. The method of claim 7,
The spray cleaning treatment tank may include a plurality of treatment liquid nozzles to provide different spray cleaning treatment liquids
Substrate wet processing apparatus. 제12항에 있어서,
상기 분무세척처리탱크는 복수 개의 회수유닛을 포함하여 서로 다른 분무세척처리액을 회수하는데 대응하는
기판습식 처리장치.13. The method of claim 12,
The spray cleaning treatment tank may include a plurality of recovery units, each of which corresponds to the recovery of different spray cleaning treatment liquids
Substrate wet processing apparatus. 제7항에 있어서,
상기 함침처리탱크, 상기 분무세척처리탱크와 상기 세척건조탱크는 모두 같은 탱크본체이고, 상기 분무세척처리탱크와 상기 세척건조탱크는 같은 탱크본체의 서로 다른 회수유닛인
기판습식 처리장치.8. The method of claim 7,
Wherein the impregnation treatment tank, the spray cleaning tank and the washing / drying tank are both the same tank body, and the spray cleaning tank and the washing / drying tank are different collection units of the same tank body
Substrate wet processing apparatus. 제14항에 있어서,
상기 탱크본체는 밀페식 탱크본체인
기판습식 처리장치.15. The method of claim 14,
The tank main body is a main body
Substrate wet processing apparatus. 제14항에 있어서,
상기 세척건조탱크는 상기 분무세척처리탱크의 위에 위치하고, 상기 기판습식처리장치는 플랫폼 구동모듈을 더 포함하며, 상기 분무세척처리를 완료한 상기 기판과 상기 기판 반전 스테이지를 상승하여 상기 세척건조탱크에 넣아 상기 세척건조과정을 하는
기판습식 처리장치.15. The method of claim 14,
Wherein the cleaning and drying tank is located above the spray cleaning tank and the substrate wet processing apparatus further comprises a platform driving module for raising the substrate and the substrate reversing stage that have completed the spray cleaning treatment, The above washing and drying process is carried out
Substrate wet processing apparatus. 제16항에 있어서,
상기 플랫폼 구동모듈은 상기 분무세척처리탱크에 위치한 상기 기판 반전 스테이지를 정방향 위치로 전환하고, 상기 기판을 상기 세척건조탱크에 정방향 위치로 넣어 상기 세척건조과정을 하는
기판습식 처리장치.17. The method of claim 16,
Wherein the platform driving module switches the substrate reversing stage located in the spray cleaning tank to a forward position and places the substrate in the washing and drying tank in a forward position to perform the washing and drying process
Substrate wet processing apparatus. 제14항에 있어서,
탱크본체 제어유닛을 포함하고,
상기 탱크본체 제어유닛은 상기 세척건조탱크와 상기 분무세척처리탱크의 상하분리를 제어하여 기판 수출입구를 형성하고, 상기 기판은 상기 기판 수출입구에 의하여 상기 기판습식 처리장치에 수출입하는
기판습식 처리장치.15. The method of claim 14,
A tank body control unit,
Wherein the tank body control unit controls the top-bottom separation of the washing-drying tank and the spray cleaning tank to form a substrate-exporting inlet, and the substrate is transferred to the substrate wet processing apparatus by the substrate-
Substrate wet processing apparatus. 제1항에 있어서,
상기 분무세척처리탱크 또는 상기 함침처리탱크의 적어도 하나의 위에 설치하고, 상기 기판이 탱크본체에 대하여 탱크본체에서 뺄 때, 기체분무세척을 하는 기체분무세척유닛
을 더 포함하는
기판습식 처리장치.The method according to claim 1,
A gas spray cleaning unit which is installed on at least one of the spray cleaning treatment tank or the impregnation treatment tank and performs gas spray cleaning when the substrate is pulled out of the tank body with respect to the tank body,
Further comprising
Substrate wet processing apparatus. 제1항에 있어서,
상기 기판은 상기 기판 반전 스테이지에 놓고, 상기 기판에 대하여 상기 습식처리과정을 하며,
상기 기판습식 처리장치는,
상기 기판 반전 스테이지가 인버트 위치 및 정방향 위치의 전환을 구동하는 플랫폼 구동모듈을 더 포함하고,
상기 기판습식 처리장치가 상기 기판에 대하여 상기 함침처리과정 및 상기 분무세척처리과정을 할 때, 상기 기판 반전 스테이지는 상기 인버트 위치로 되고, 상기 기판습식 처리장치가 상기 기판에 대하여 세척건조과정을 할 때, 상기 기판 반전 스테이지는 정방향 위치가 되는
기판습식 처리장치.The method according to claim 1,
The substrate is placed on the substrate reversal stage, the wet process is performed on the substrate,
The substrate wet processing apparatus includes:
Further comprising a platform driving module for driving the substrate inversion stage to switch between an invert position and a forward position,
When the substrate wet processing apparatus performs the impregnating process and the spray cleaning process on the substrate, the substrate reversing stage is in the invert position, and the substrate wet processing apparatus performs a washing and drying process on the substrate The substrate inversion stage is in the forward position
Substrate wet processing apparatus.
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