TW201818492A - Apparatus for substrate wet processing - Google Patents
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- TW201818492A TW201818492A TW106122530A TW106122530A TW201818492A TW 201818492 A TW201818492 A TW 201818492A TW 106122530 A TW106122530 A TW 106122530A TW 106122530 A TW106122530 A TW 106122530A TW 201818492 A TW201818492 A TW 201818492A
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
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Abstract
Description
本發明係關於一種基板處理裝置，特別關於一種基板濕式處理裝置。The present invention relates to a substrate processing apparatus, and more particularly to a substrate wet processing apparatus.
在半導體製程中，會對基板（如晶圓）進行多道的濕式處理程序，例如對晶圓的待處理表面（正面）噴灑處理液，其可以為化學溶液（且不限於酸性或鹼性化學溶液）、或去離子水等清洗液，以對晶圓的待處理表面進行蝕刻、或清洗。習知的晶圓濕式處理裝置具有旋轉平台及供液單元，供液單元一般設置於旋轉平台的上方。旋轉平台承載並固持晶圓，旋轉平台可依不同處理程序的參數設定，進行高低速的旋轉，以帶動晶圓旋轉。供液單元則可依處理程序的不同分別使用對應之處理液，將處理液提供至晶圓的待處理表面，以對待處理表面進行蝕刻或清洗。In the semiconductor manufacturing process, multiple substrates (such as wafers) are subjected to multiple wet processing procedures, such as spraying a processing liquid on the surface (front surface) of the wafer to be processed, which can be a chemical solution (and not limited to acidic or alkaline). Chemical solution), or cleaning solution such as deionized water to etch or clean the surface to be processed of the wafer. The conventional wafer wet processing device has a rotary platform and a liquid supply unit, and the liquid supply unit is generally disposed above the rotary platform. The rotating platform carries and holds the wafer. The rotating platform can rotate at high and low speeds according to the parameter settings of different processing programs to drive the wafer to rotate. The liquid supply unit can use corresponding processing liquids according to different processing procedures, and provide the processing liquids to the surface to be processed of the wafer for etching or cleaning.
一般而言，晶圓濕式處理裝置具有液體回收單元（或稱為杯體），其設置於旋轉平台的外側，用以承接液體處理期間內，自晶圓飛散的處理液。然而，旋轉平台在低轉速的情況下，晶圓之待處理表面上的處理液，則可能因低轉速的離心力低，而自晶圓的邊緣流至晶圓濕式處理裝置或旋轉平台的底部，進而產生腐蝕或結晶的現象，並造成晶圓濕式處理裝置運作異常的問題。Generally speaking, a wafer wet processing device has a liquid recovery unit (also referred to as a cup), which is disposed on the outer side of the rotating platform to receive the processing liquid scattered from the wafer during the liquid processing period. However, under the condition of low rotation speed of the rotating platform, the processing liquid on the surface to be processed of the wafer may flow from the edge of the wafer to the wafer wet processing device or the bottom of the rotating platform due to the low centrifugal force of the low rotating speed. In addition, the phenomenon of corrosion or crystallization occurs, and the problem of abnormal operation of the wafer wet processing device is caused.
有鑑於上述課題，本發明之主要目的係在提供一種基板濕式處理裝置，包括一液體回收單元，並藉由另外設置一濕式的廢液收集單元，以解決處理液自基板的邊緣流出而造成晶圓濕式處理裝置運作異常的問題。In view of the above problems, the main object of the present invention is to provide a substrate wet processing device including a liquid recovery unit, and by providing a wet waste liquid collection unit to solve the problem that the processing liquid flows out from the edge of the substrate, Causes abnormal operation of wafer wet processing equipment.
為達成上述之目的，本發明提供一種基板濕式處理裝置，用於處理一基板。基板濕式處理裝置包括一旋轉單元、一供液單元、一液體回收單元以及一廢液收集單元。旋轉單元承載基板。供液單元提供一處理液至基板。液體回收單元設置於旋轉單元的外側。廢液收集單元包括一廢液收集槽、一供液部及一排液部，廢液收集槽設置於旋轉單元及液體回收單元之間，供液部及排液部連接於廢液收集槽，且供液部提供一清洗液至廢液收集槽。其中，當處理液落入廢液收集槽，處理液與清洗液混合形成一混合廢液。To achieve the above object, the present invention provides a substrate wet processing device for processing a substrate. The substrate wet processing device includes a rotation unit, a liquid supply unit, a liquid recovery unit, and a waste liquid collection unit. The rotation unit carries a substrate. The liquid supply unit provides a processing liquid to the substrate. The liquid recovery unit is disposed outside the rotation unit. The waste liquid collection unit includes a waste liquid collection tank, a liquid supply unit and a liquid discharge unit. The waste liquid collection tank is disposed between the rotation unit and the liquid recovery unit, and the liquid supply unit and the liquid discharge unit are connected to the waste liquid collection tank. And the liquid supply part provides a cleaning liquid to the waste liquid collection tank. Wherein, when the treatment liquid falls into the waste liquid collection tank, the treatment liquid and the cleaning liquid are mixed to form a mixed waste liquid.
根據本發明之一實施例，排液部包括一排液口及一廢液通道，排液口設置於廢液收集槽，廢液通道連接於排液口。According to an embodiment of the present invention, the liquid discharge unit includes a liquid discharge port and a waste liquid channel. The liquid discharge port is disposed in the waste liquid collection tank, and the waste liquid channel is connected to the liquid discharge port.
根據本發明之一實施例，排液部更具有一控制閥，設置於廢液通道，以控制清洗液或混合廢液自廢液收集槽排出的流速。According to an embodiment of the present invention, the liquid discharge part further has a control valve disposed in the waste liquid channel to control the flow rate of the cleaning liquid or the mixed waste liquid discharged from the waste liquid collection tank.
根據本發明之一實施例，排液口的設置位置高於廢液收集槽之一底面。According to an embodiment of the present invention, a position of the liquid discharge port is higher than a bottom surface of a waste liquid collection tank.
根據本發明之一實施例，排液部更具有一延伸段，其設置於廢液收集槽，且排液口位於延伸段之一頂面，使廢液收集槽內的清洗液或混合廢液，累積至延伸段之頂面的高度後，從排液口排出。According to an embodiment of the present invention, the liquid discharge part further has an extension section, which is disposed in the waste liquid collection tank, and the liquid discharge port is located on a top surface of the extension section, so that the cleaning liquid or mixed waste liquid in the waste liquid collection tank is After accumulating to the height of the top surface of the extension, it is discharged from the liquid discharge port.
根據本發明之一實施例，排液口設置於廢液收集槽之一側壁。According to an embodiment of the present invention, the liquid discharge port is disposed on a side wall of the waste liquid collection tank.
根據本發明之一實施例，其中供液部非持續性地提供清洗液，廢液收集槽內的清洗液或混合廢液保持於一預設水位。According to an embodiment of the present invention, the liquid supply part provides the cleaning liquid non-continuously, and the cleaning liquid or mixed waste liquid in the waste liquid collection tank is maintained at a preset water level.
根據本發明之一實施例，供液部持續性地提供清洗液至廢液收集槽。According to an embodiment of the present invention, the liquid supply unit continuously supplies the cleaning liquid to the waste liquid collection tank.
根據本發明之一實施例，廢液收集組件更包括一偵測件，設置於廢液收集槽，並偵測混合廢液的容量。According to an embodiment of the present invention, the waste liquid collection assembly further includes a detecting member disposed in the waste liquid collection tank, and detects the capacity of the mixed waste liquid.
根據本發明之一實施例，當旋轉單元的轉速大於一預設值時，液體回收單元自基板接收處理液，當旋轉平台的轉速小於預設值時，廢液收集槽自基板接收處理液。According to an embodiment of the present invention, when the rotation speed of the rotary unit is greater than a preset value, the liquid recovery unit receives the processing liquid from the substrate, and when the rotation speed of the rotary platform is less than the preset value, the waste liquid collection tank receives the processing liquid from the substrate.
根據本發明之一實施例，其中液體回收單元更包括一承接件，用以接收處理液，承接件延伸覆蓋設置於廢液收集槽之一外圍槽壁。According to an embodiment of the present invention, the liquid recovery unit further includes a receiving member for receiving the processing liquid, and the receiving member extends to cover a peripheral tank wall disposed on a waste liquid collecting tank.
承上所述，依據本發明之基板濕式處理裝置，其包括旋轉單元、供液單元、液體回收單元以及廢液收集單元。廢液收集單元設置於旋轉單元及液體回收單元之間，且廢液收集槽位於基板的下方，以接收自基板邊緣流出的處理液，以避免處理液直接滴落至基板濕式處理裝置的底部。又，廢液收集單元的供液部提供清洗液至廢液收集槽，以稀釋所接收之處理液，以避免處理液於廢液收集單元中產生結晶的情形，進而可避免基板濕式處理裝置運作異常，並增加其使用壽命。As mentioned above, the substrate wet processing apparatus according to the present invention includes a rotation unit, a liquid supply unit, a liquid recovery unit, and a waste liquid collection unit. The waste liquid collection unit is disposed between the rotation unit and the liquid recovery unit, and the waste liquid collection tank is located below the substrate to receive the processing liquid flowing from the edge of the substrate to prevent the processing liquid from dripping directly to the bottom of the substrate wet processing device . In addition, the liquid supply part of the waste liquid collection unit provides a cleaning liquid to the waste liquid collection tank to dilute the received processing liquid to avoid the situation where the processing liquid crystallizes in the waste liquid collection unit, thereby avoiding the substrate wet processing device. Abnormal operation and increase its service life.
為能讓 貴審查委員能更瞭解本發明之技術內容，特舉較佳具體實施例說明如下。In order to make your reviewing committee better understand the technical content of the present invention, specific preferred embodiments are described below.
圖1為本發明之一實施例之基板濕式處理裝置的剖面示意圖，請參考圖1所示。本實施例之基板濕式處理裝置1係用於處理基板S，具體而言，基板濕式處理裝置1係應用在半導體晶圓製程中的濕式處理程序，例如對基板S（如晶圓）的表面進行蝕刻或清洗等程序。在本實施例中，基板濕式處理裝置1包括一旋轉單元10、一供液單元20、一液體回收單元30以及一廢液收集單元40。其中，旋轉單元10用以承載基板S，並帶動基板S旋轉。在本實施例中，旋轉單元10包括轉軸11及固定件12，轉軸11連接於固定件12。藉由固定件12承載並固定基板S，並透過轉軸11帶動固定件12及基板S旋轉。其中，固定件12可透過卡扣機構固持基板S，或是透過真空負壓的方式吸取並固定基板S，本發明並不限制。FIG. 1 is a schematic cross-sectional view of a substrate wet processing apparatus according to an embodiment of the present invention. Please refer to FIG. 1. The substrate wet processing apparatus 1 of this embodiment is used to process the substrate S. Specifically, the substrate wet processing apparatus 1 is a wet processing program applied to a semiconductor wafer process, for example, to the substrate S (such as a wafer). The surface is etched or cleaned. In this embodiment, the substrate wet processing apparatus 1 includes a rotating unit 10, a liquid supply unit 20, a liquid recovery unit 30, and a waste liquid collection unit 40. The rotating unit 10 is configured to carry the substrate S and drive the substrate S to rotate. In this embodiment, the rotating unit 10 includes a rotating shaft 11 and a fixing member 12, and the rotating shaft 11 is connected to the fixing member 12. The substrate S is carried and fixed by the fixing member 12, and the fixing member 12 and the substrate S are driven to rotate through the rotating shaft 11. Wherein, the fixing member 12 can hold the substrate S through the buckle mechanism, or can suck and fix the substrate S by means of vacuum negative pressure, which is not limited in the present invention.
在本實施例中，供液單元20設置於旋轉單元10的上方，以提供一處理液至基板S。處理液係指於半導體晶圓製程中的濕式處理程序中所需使用的液體，其可例如但不限於酸性化學液、或鹼性化學液、或去離子水等清洗液。藉由供液單元20提供處理液，並噴灑至旋轉中的基板S，以對基板S進行蝕刻或清洗等程序。In this embodiment, the liquid supply unit 20 is disposed above the rotating unit 10 to provide a processing liquid to the substrate S. The processing liquid refers to a liquid used in a wet processing procedure in a semiconductor wafer manufacturing process, and may be, for example, but not limited to, an acidic chemical solution, an alkaline chemical solution, or a cleaning solution such as deionized water. The processing liquid is provided by the liquid supply unit 20 and sprayed onto the rotating substrate S to perform processes such as etching or cleaning the substrate S.
液體回收單元30係設置於旋轉單元10的外側，用以接收自基板S飛散的處理液。本實施例之液體回收單元30包括承接件31、排液通道32、回收槽33，排液通道32分別連通承接件31及回收槽33，而承接件31係位於基板S的外側。藉由承接件31接收自基板S飛散的處理液，並導引至承接件31的內部，接著經由排液通道32流至回收槽33。其中，回收之處理液可進行回收再利用的循環程序，亦可由操作人員選擇是否進行回收程序，本發明並不限制。另外，液體回收單元30具有升降機構（圖未顯示），其連接於承接件31，可將承接件31移動至與基板S相對應的位置，以承接飛濺的處理液。The liquid recovery unit 30 is disposed outside the rotating unit 10 and is configured to receive the processing liquid scattered from the substrate S. The liquid recovery unit 30 of this embodiment includes a receiving member 31, a liquid drainage channel 32, and a recovery tank 33. The liquid drainage channel 32 communicates with the receiving member 31 and the recovery tank 33, respectively, and the receiving member 31 is located outside the substrate S. The processing liquid scattered from the substrate S is received by the receiving member 31 and guided to the inside of the receiving member 31, and then flows to the recovery tank 33 through the liquid discharge passage 32. Wherein, the recovered treatment liquid can be subjected to a recycling program for recycling and reuse, or an operator can choose whether to perform the recycling program, and the present invention is not limited. In addition, the liquid recovery unit 30 has a lifting mechanism (not shown), which is connected to the receiving member 31 and can move the receiving member 31 to a position corresponding to the substrate S to receive the splashed processing liquid.
圖2為圖1所示之旋轉單元、液體回收單元及廢液收集單元的上視圖，請同時參考圖1及圖2所示。本實施例之廢液收集單元40包括一廢液收集槽41、一供液部42及一排液部43。廢液收集槽41設置於旋轉單元10及液體回收單元30之間，且位於基板S的下方，用以接收自基板S的邊緣所流出的處理液，排液部43連接於廢液收集槽41，用以排除廢液收集槽41內的液體。在本實施例中，排液部43包括一排液口431及一廢液通道432，排液口431設置於廢液收集槽41，排液口431可以為圓孔狀、橢圓孔狀、環狀、或其他多邊形狀，本發明並不限定。又，廢液通道432連接於排液口431，使處理液自排液口431往廢液通道432排出。FIG. 2 is a top view of the rotation unit, the liquid recovery unit, and the waste liquid collection unit shown in FIG. 1. Please refer to FIG. 1 and FIG. 2 at the same time. The waste liquid collection unit 40 of this embodiment includes a waste liquid collection tank 41, a liquid supply part 42, and a liquid discharge part 43. The waste liquid collection tank 41 is disposed between the rotation unit 10 and the liquid recovery unit 30 and is located below the substrate S to receive the processing liquid flowing from the edge of the substrate S. The liquid discharge part 43 is connected to the waste liquid collection tank 41 For removing the liquid in the waste liquid collecting tank 41. In this embodiment, the liquid discharge portion 43 includes a liquid discharge port 431 and a waste liquid channel 432. The liquid discharge port 431 is disposed in the waste liquid collection tank 41. The liquid discharge port 431 may be a circular hole, an oval hole, or a ring. Shape, or other polygonal shapes, the present invention is not limited. In addition, the waste liquid passage 432 is connected to the liquid discharge port 431, and the processing liquid is discharged from the liquid discharge port 431 to the waste liquid passage 432.
進而言之，本實施例之液體回收單元30用於回收飛散的大部分處理液，並可進行後續之回收再利用程序，而廢液收集單元40則是用於接收未能飛散至承接件31之處理液，其可直接作為廢液並由排液部43排除。藉由設置此濕式的廢液收集單元40，以避免處理液直接從基板S的邊緣流至基板濕式處理裝置1或旋轉單元10的底部，進而產生腐蝕或結晶的現象，而造成基板濕式處理裝置1運作異常的問題。In addition, the liquid recovery unit 30 of this embodiment is used to recover most of the scattered processing liquid, and can be used for subsequent recovery and reuse procedures, while the waste liquid collection unit 40 is used to receive the liquid that has not been scattered to the receiving part 31. The treatment liquid can be directly used as a waste liquid and discharged by the liquid discharge portion 43. By providing this wet-type waste liquid collection unit 40, the processing liquid is prevented from flowing directly from the edge of the substrate S to the bottom of the substrate wet processing apparatus 1 or the rotating unit 10, thereby causing corrosion or crystallization, which causes the substrate to be wet. The problem that the type processing device 1 operates abnormally.
另外，可參考圖1所示，液體回收單元30之承接件31可延伸覆蓋設置於廢液收集單元40之廢液收集槽41之外圍槽壁，因此，處理液僅會飛濺或流入至承接件31或廢液收集槽41，可避免處理液流至基板濕式處理裝置1的底部，進而產生腐蝕或結晶的現象，或造成基板濕式處理裝置1運作異常的問題。In addition, as shown in FIG. 1, the receiving member 31 of the liquid recovery unit 30 can extend to cover the outer tank wall of the waste liquid collecting tank 41 provided in the waste liquid collecting unit 40. Therefore, the processing liquid will only splash or flow into the receiving member. 31 or the waste liquid collection tank 41 can prevent the processing liquid from flowing to the bottom of the substrate wet processing apparatus 1, thereby causing the phenomenon of corrosion or crystallization, or causing the problem of abnormal operation of the substrate wet processing apparatus 1.
另外，轉軸11亦可依據不同的製程條件之參數設定，使旋轉單元10進行高低速的旋轉。當旋轉單元10的轉速大於一預設值時，基板S上的處理液因較大的離心力而飛濺至外側的承接件31，使液體回收單元30自基板S接收處理液。又，當旋轉單元10的轉速小於預設值時，基板S上的處理液則因較小的離心力而飛濺至內側的廢液收集單元40，或是直接由基板S的邊緣滴落至廢液收集槽41內，由廢液收集單元40自基板S接收處理液。於本實施例中，轉速的預設值會依據該處理液本身的性質而有所差異，以水為例，當旋轉單元10的轉速大於300 rpm時，基板S上的水會飛濺至承接件31，當旋轉單元10的轉速小於300 rpm時，基板S上的水會飛濺至廢液收集單元40，以上僅舉水為例，並不以本案之舉例為限。In addition, the rotating shaft 11 can also make the rotating unit 10 rotate at high and low speeds according to parameter setting of different process conditions. When the rotation speed of the rotating unit 10 is greater than a preset value, the processing liquid on the substrate S is splashed to the receiving member 31 on the outside due to a large centrifugal force, so that the liquid recovery unit 30 receives the processing liquid from the substrate S. In addition, when the rotation speed of the rotating unit 10 is less than a preset value, the processing liquid on the substrate S is splashed to the waste liquid collection unit 40 on the inside due to a small centrifugal force, or is directly dropped to the waste liquid from the edge of the substrate S In the collection tank 41, the waste liquid collection unit 40 receives the processing liquid from the substrate S. In this embodiment, the preset value of the rotation speed will vary according to the nature of the processing liquid. Taking water as an example, when the rotation speed of the rotating unit 10 is greater than 300 rpm, water on the substrate S will splash onto the receiving part. 31. When the rotation speed of the rotation unit 10 is less than 300 rpm, water on the substrate S will splash into the waste liquid collection unit 40. The above is only taken as an example, and is not limited to the example in this case.
一般而言，處理液大部分為酸性或鹼性的化學溶液，若單純僅由廢液收集槽41及排液部43承接並排除處理液，則容易造成廢液收集槽41、排液口431或廢液通道432內有結晶的情形發生，進而造成處理液的排放效果不佳，甚至造成基板濕式處理裝置1的異常。在本實施例中，供液部42連接於廢液收集槽41，且供液部42提供一清洗液至廢液收集槽41。當處理液自基板S落入廢液收集槽41時，處理液即可與清洗液混合而形成一混合廢液，換言之，廢液收集槽41自基板S接收處理液，廢液收集槽41內的清洗液可稀釋處理液並形成混合廢液，再透過排液部43將混合廢液排出廢液收集單元40。又，清洗液包括水、或其他可稀釋處理液的液體，以避免處理液於廢液收集槽41、排液口431或廢液通道432內產生結晶的情形。換言之，藉由設置此濕式的廢液收集單元40，可避免處理液於廢液收集單元40產生腐蝕或結晶的現象。Generally speaking, most of the treatment liquid is an acidic or alkaline chemical solution. If the treatment liquid is only accepted and discharged by the waste liquid collection tank 41 and the drainage part 43, the waste liquid collection tank 41 and the drainage port 431 are easily caused. Or crystals may occur in the waste liquid channel 432, which may cause poor discharge of the processing liquid, and may even cause an abnormality in the substrate wet processing apparatus 1. In this embodiment, the liquid supply part 42 is connected to the waste liquid collection tank 41, and the liquid supply part 42 provides a cleaning liquid to the waste liquid collection tank 41. When the processing liquid falls into the waste liquid collection tank 41 from the substrate S, the processing liquid can be mixed with the cleaning liquid to form a mixed waste liquid. In other words, the waste liquid collection tank 41 receives the processing liquid from the substrate S, and the waste liquid collection tank 41 The washing liquid can dilute the treatment liquid and form a mixed waste liquid, and then pass the mixed waste liquid out of the waste liquid collection unit 40 through the liquid discharge part 43. In addition, the cleaning liquid includes water or other liquid capable of diluting the processing liquid, so as to prevent the processing liquid from crystallizing in the waste liquid collection tank 41, the liquid discharge port 431, or the waste liquid channel 432. In other words, by providing the wet-type waste liquid collection unit 40, it is possible to prevent the treatment liquid from generating corrosion or crystallization in the waste liquid collection unit 40.
較佳的，廢液收集槽41內可持續性地具有清洗液，使清洗液或混合廢液的液面高於廢液收集槽41的底面。具體而言，可於基板濕式處理裝置1運轉時，供液部42持續性地提供清洗液至廢液收集槽41內，藉此增加清洗液與處理液混合的時間、流動，使處理液可被清洗液有效地稀釋後，再自排液口431排出，以避免前述結晶的問題。當然，亦可藉由其他結構達成此效果，例如使排液口431的設置位置高於廢液收集槽41的底面，故清洗液或混合廢液於廢液收集槽41內堆積至排液口431的高度後，始可由排液部43排出。Preferably, a cleaning liquid is continuously provided in the waste liquid collection tank 41 so that the liquid level of the cleaning liquid or the mixed waste liquid is higher than the bottom surface of the waste liquid collection tank 41. Specifically, when the substrate wet processing apparatus 1 is running, the liquid supply unit 42 can continuously provide the cleaning liquid into the waste liquid collection tank 41, thereby increasing the mixing time and flow of the cleaning liquid and the processing liquid, and making the processing liquid It can be effectively diluted by the cleaning solution and then discharged from the liquid discharge port 431 to avoid the aforementioned crystallization problem. Of course, this effect can also be achieved by other structures, for example, the setting position of the liquid discharge port 431 is higher than the bottom surface of the waste liquid collection tank 41, so the cleaning liquid or mixed waste liquid is accumulated in the waste liquid collection tank 41 to the liquid discharge port After the height of 431, it can be discharged by the liquid discharge part 43 at first.
圖3為圖1所示之廢液收集槽的立體示意圖，請同時參考圖1及圖3所示。在本實施例中，排液部43更具有一延伸段433，其設置於廢液收集槽41的底面，排液口431則位於延伸段433的頂面，廢液通道432的一端與延伸段433連通。藉由延伸段433的設計，使供液部42所提供之清洗液，或其與處理液混合後所形成的混合廢液，累積至延伸段433頂面的高度後，始能從排液口431排出。因此，供液部42可以非持續性的方式提供清洗液，或是以週期性的方式提供清洗液，例如供液部42在提供清洗液10分鐘後，間隔一段時間，例如5至10分鐘，再繼續提供清洗液10分鐘。即便供液部42停止提供清洗液的期間，排液口431的設置位置高於廢液收集槽41之底面的設計，使廢液收集槽41內的清洗液或混合廢液仍可保持在一預設水位，即排液口431的高度。FIG. 3 is a schematic perspective view of the waste liquid collection tank shown in FIG. 1. Please refer to FIG. 1 and FIG. 3 at the same time. In this embodiment, the draining part 43 further has an extension section 433, which is disposed on the bottom surface of the waste liquid collecting tank 41, the drain port 431 is located on the top surface of the extension section 433, and one end of the waste liquid channel 432 and the extension section 433 connected. With the design of the extension section 433, the cleaning liquid provided by the liquid supply section 42 or the mixed waste liquid formed after being mixed with the treatment liquid is accumulated to the height of the top surface of the extension section 433, and then can be discharged from the liquid discharge port. 431 is discharged. Therefore, the liquid supply part 42 can provide the cleaning liquid in a non-continuous manner or in a periodic manner. For example, after the liquid supply part 42 provides the cleaning liquid for 10 minutes, the cleaning liquid is provided at intervals, such as 5 to 10 minutes. Continue to provide cleaning solution for another 10 minutes. Even when the liquid supply section 42 stops supplying cleaning liquid, the position of the drain port 431 is higher than the bottom surface of the waste liquid collection tank 41, so that the cleaning liquid or mixed waste liquid in the waste liquid collection tank 41 can be maintained at The preset water level is the height of the drain port 431.
圖4為圖1所示之排液部之另一實施例的示意圖，請參考圖4所示。本實施例之廢液收集單元40a，其將排液口431a設置於廢液收集槽41a的側壁，使排液口431a的設置位置高於廢液收集槽41a的底面，同樣可達到有效地稀釋處理液的效果。又，供液部42a提供清洗液的入口，可設置於廢液收集槽41a的側壁、或底面，而本實施例係以設置於廢液收集槽41a的側壁為例。在本實施例中，液體回收單元30之承接件31亦可延伸覆蓋設置於廢液收集單元40a之廢液收集槽41a之外圍槽壁，其他細節內容可參考前述實施例，並沿用其標號。FIG. 4 is a schematic diagram of another embodiment of the liquid discharge part shown in FIG. 1. Please refer to FIG. 4. In the waste liquid collection unit 40a of this embodiment, the liquid discharge port 431a is provided on the side wall of the waste liquid collection tank 41a, so that the position of the liquid discharge port 431a is higher than the bottom surface of the waste liquid collection tank 41a, and effective dilution can also be achieved Effect of treatment fluid. In addition, the liquid supply part 42a provides an inlet for the cleaning liquid, and may be provided on a side wall or a bottom surface of the waste liquid collection tank 41a. In this embodiment, the side wall provided in the waste liquid collection tank 41a is taken as an example. In this embodiment, the receiving member 31 of the liquid recovery unit 30 can also extend to cover the peripheral groove wall of the waste liquid collection tank 41a provided in the waste liquid collection unit 40a. For other details, refer to the foregoing embodiment and use the reference numerals.
在其他實施例中，即便排液口431位於廢液收集槽41的底面，亦即未高於廢液收集槽41的底面，亦可藉由設置控制閥（圖未顯示），以達到廢液收集槽41內可持續性地具有清洗液的效果。具體而言，排液部43更可具有一控制閥，其可設置於廢液通道432，以控制混合廢液排出的流速小於供液部42提供清洗液的流速，藉此使廢液收集槽41內可持續性地保有清洗液或混合廢液。In other embodiments, even if the drain port 431 is located on the bottom surface of the waste liquid collection tank 41, that is, it is not higher than the bottom surface of the waste liquid collection tank 41, a control valve (not shown) can be provided to achieve waste liquid The collection tank 41 has the effect of a cleaning liquid in a sustainable manner. Specifically, the liquid discharge portion 43 may further include a control valve which may be provided in the waste liquid channel 432 to control the flow rate of the mixed waste liquid to be discharged to be lower than the flow rate of the cleaning liquid provided by the liquid supply portion 42, thereby enabling the waste liquid collection tank In 41, the cleaning liquid or mixed waste liquid is continuously maintained.
較佳的，廢液收集單元40更可包括一偵測件（圖未顯示），其可設置於廢液收集槽41，用以偵測廢液收集槽41內混合廢液的容量，舉例而言，偵測容量可以為偵測對應之液面高度。對應的，基板濕式處理裝置1更可包括控制模組，其與偵測件及供液部42連接，藉由偵測件偵測廢液收集槽41內混合廢液的容量，以控制供液部42提供清洗液的流速。抑或是，控制模組與偵測件及排液部43的控制閥連接，同樣藉由偵測件偵測廢液收集槽41內混合廢液的容量，但透過調整排液部43的控制閥，以控制混合廢液排出的流速。Preferably, the waste liquid collection unit 40 may further include a detection member (not shown), which may be disposed in the waste liquid collection tank 41 to detect the capacity of the mixed waste liquid in the waste liquid collection tank 41. For example, In other words, the detection capacity can be the detection of the corresponding liquid level. Correspondingly, the substrate wet processing apparatus 1 may further include a control module, which is connected to the detection member and the liquid supply section 42, and detects the capacity of the mixed waste liquid in the waste liquid collection tank 41 by the detection member to control the supply of the liquid. The liquid portion 42 provides a flow rate of the cleaning liquid. Alternatively, the control module is connected to the detection element and the control valve of the liquid discharge part 43. The detection element is also used to detect the capacity of the mixed waste liquid in the waste liquid collection tank 41, but by adjusting the control valve of the liquid discharge part 43 To control the flow rate of mixed waste liquid discharge.
綜上所述，依據本發明之基板濕式處理裝置，其包括旋轉單元、供液單元、液體回收單元以及廢液收集單元。廢液收集單元設置於旋轉單元及液體回收單元之間，且廢液收集槽位於基板的下方，以接收自基板邊緣流出的處理液，以避免處理液直接滴落至基板濕式處理裝置的底部。又，廢液收集單元的供液部提供清洗液至廢液收集槽，以稀釋所接收之處理液，以避免處理液於廢液收集單元中產生結晶的情形，進而可避免基板濕式處理裝置運作異常，並增加其使用壽命。In summary, the substrate wet processing apparatus according to the present invention includes a rotation unit, a liquid supply unit, a liquid recovery unit, and a waste liquid collection unit. The waste liquid collection unit is disposed between the rotation unit and the liquid recovery unit, and the waste liquid collection tank is located below the substrate to receive the processing liquid flowing from the edge of the substrate to prevent the processing liquid from dripping directly to the bottom of the substrate wet processing device . In addition, the liquid supply part of the waste liquid collection unit provides a cleaning liquid to the waste liquid collection tank to dilute the received processing liquid to avoid the situation where the processing liquid crystallizes in the waste liquid collection unit, thereby avoiding the substrate wet processing device. Abnormal operation and increase its service life.
本發明無論就目的、手段及功效，在在均顯示其迥異於習知技術之特徵，懇請 貴審查委員明察，早日賜准專利，俾嘉惠社會，實感德便。惟應注意的是，上述諸多實施例係為了便於說明而舉例，本發明所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。Regardless of the purpose, means and effect of the present invention, the present invention shows its characteristics that are quite different from those of the conventional technology. I implore your reviewing committee to make a clear observation, to grant a quasi-patent at an early date, to benefit the society, and to feel good. However, it should be noted that the above-mentioned embodiments are examples for convenience of explanation. The scope of the claimed rights of the present invention shall be based on the scope of the patent application, rather than being limited to the above-mentioned embodiments.
1‧‧‧基板濕式處理裝置1‧‧‧ substrate wet processing device
10‧‧‧旋轉單元 10‧‧‧ rotating unit
11‧‧‧轉軸 11‧‧‧ shaft
12‧‧‧固定件 12‧‧‧Fixed parts
20‧‧‧供液單元 20‧‧‧ Liquid supply unit
30‧‧‧液體回收單元 30‧‧‧Liquid recovery unit
31‧‧‧承接件 31‧‧‧Acceptance
32‧‧‧排液通道 32‧‧‧ drainage channel
33‧‧‧回收槽 33‧‧‧ Recovery Tank
40、40a‧‧‧廢液收集單元 40, 40a‧‧‧ waste liquid collection unit
41、41a‧‧‧廢液收集槽 41, 41a‧‧‧ Waste liquid collection tank
42、42a‧‧‧供液部 42, 42a‧‧‧liquid supply department
43‧‧‧排液部 43‧‧‧Draining Department
431、431a‧‧‧排液口 431, 431a‧‧‧ drain port
432‧‧‧廢液通道 432‧‧‧Waste liquid channel
433‧‧‧延伸段 433‧‧‧ extension
S‧‧‧基板 S‧‧‧ substrate
圖1為本發明之一實施例之基板濕式處理裝置的剖面示意圖。 圖2為圖1所示之旋轉單元、液體回收單元及廢液收集單元的上視圖。 圖3為圖1所示之廢液收集槽的立體示意圖。 圖4為圖1所示之排液部之另一實施例的示意圖。FIG. 1 is a schematic cross-sectional view of a substrate wet processing apparatus according to an embodiment of the present invention. FIG. 2 is a top view of the rotation unit, the liquid recovery unit, and the waste liquid collection unit shown in FIG. 1. FIG. FIG. 3 is a schematic perspective view of the waste liquid collection tank shown in FIG. 1. FIG. 4 is a schematic diagram of another embodiment of the liquid discharge part shown in FIG. 1.
Claims (11)
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| US201662420107P | 2016-11-10 | 2016-11-10 | |
| US62/420,107 | 2016-11-10 |
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| TW106123869A TWI652462B (en) | 2016-11-10 | 2017-07-17 | Valve body abnormality detecting device and method for detecting abnormal body thereof |
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