JP5494079B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device having a photoresist developing step.

  The photoresist pattern used in the manufacturing process of the semiconductor device is formed by a development process in which an excess portion of the photoresist is removed after the photoresist is applied to the upper surface of the semiconductor wafer and exposed.

  In the conventional development process, a developer is supplied to the surface of the semiconductor wafer to dissolve the excess portion of the photoresist in the developer, and then the developer is washed away with a rinse solution, and finally the semiconductor wafer is rotated at a high speed. Rinse solution is removed and dried.

  In addition, in the development process described above, a method is known in which cleaning is performed while simultaneously supplying the rinsing liquid to the front surface and the back surface of the semiconductor wafer in order to prevent the dirty rinsing liquid on the wafer surface side from entering the back surface side of the wafer. .

  However, in the conventional development process, even when cleaning is performed while simultaneously supplying a rinsing liquid to the front and back surfaces of the semiconductor wafer, dirt may adhere to the back surface of the semiconductor wafer.

Japanese Patent Laid-Open No. 10-321581 JP 2000-147788 A JP 2004-22783 A

  Accordingly, an object of the present invention is to provide a method of manufacturing a semiconductor device that can prevent dirt from adhering to the back surface of a semiconductor wafer in a photoresist developing process.

According to one aspect, a step of developing a photoresist applied to a surface of a semiconductor wafer, and after the development, a first rinse liquid is discharged to the photoresist while the semiconductor wafer is rotating. However, a step of cleaning the photoresist and the back surface of the semiconductor wafer by discharging a second rinse liquid to the back surface of the semiconductor wafer, and after the cleaning, the semiconductor wafer is rotated. stops discharge of the first rinse liquid, the step of stopping the discharge of the second rinse liquid after stopping the discharge of the first rinse liquid, said the discharge of the first rinse liquid first after stopping the discharge of the second rinsing liquid, while controlling the rotational acceleration of said semiconductor wafer, a method of manufacturing a semiconductor device having a step of stopping by decelerating the rotation of the semiconductor wafer is provided

  According to the method of manufacturing a semiconductor device of the above aspect, after stopping the discharge of the first rinse liquid and the discharge of the second rinse liquid, the semiconductor device is decelerated and stopped while controlling the number of rotations of the semiconductor wafer. . Therefore, when the rotation of the semiconductor wafer is stopped, the generation of turbulent flow on the back side of the semiconductor wafer can be suppressed to prevent the drainage from rising due to the turbulent flow, and the adhesion of dirt to the back surface of the semiconductor wafer can be prevented. .

FIG. 1 is a block diagram showing a developing device used for the preliminary investigation. FIG. 2 is a cross-sectional view showing the structure of the spin chuck, the cup and the case body of the developing device shown in FIG. FIG. 3 is a table showing the developer cleaning process in the preliminary investigation. FIG. 4 is a graph showing the number of rotations of the semiconductor wafer and the period of rinsing liquid supply in the cleaning process of FIG. FIG. 5 is a view showing the back surface of the semiconductor wafer obtained by the cleaning process of the preliminary investigation. FIG. 6 is a cross-sectional view showing a problem when dirt is attached to the back surface of the semiconductor wafer. FIGS. 7A and 7B are schematic views showing the cause of contamination on the back surface of the semiconductor wafer in the preliminary investigation. FIG. 8 is a flowchart showing the method for manufacturing the semiconductor device of the first embodiment. FIG. 9 is a table showing a developer cleaning process in the semiconductor device manufacturing method of the first embodiment. FIG. 10 is a graph showing the number of rotations of the semiconductor wafer and the period of rinsing liquid supply in the cleaning process of FIG. FIG. 11 is a schematic diagram showing the air flow on the back side of the semiconductor wafer in the seventh step of FIG. FIG. 12 is a flowchart showing the method for manufacturing the semiconductor device of the second embodiment. FIG. 13 is a table showing a developer cleaning process in the semiconductor device manufacturing method according to the second embodiment. FIG. 14 is a graph showing the number of rotations of the semiconductor wafer and the period of rinsing liquid supply in the cleaning process of FIG.

  Prior to the description of the embodiment, a preliminary investigation conducted by the present inventor will be described.

  The inventor of the present application conducted a preliminary investigation described below in order to elucidate the cause of contamination on the back surface of the wafer during the development process.

  First, the developing device used for the preliminary investigation will be described. FIG. 1 is a block diagram showing the developing device used for the preliminary investigation, and FIG. 2 is a cross-sectional view showing the structure of the spin chuck, cup and case of the developing device of FIG. In FIG. 2, one side from the central axis (II line) of the spin chuck is omitted.

  As shown in FIGS. 1 and 2, the developing device 10 includes a spin chuck 11 that can rotate around a shaft 11a. The spin chuck 11 is a vacuum chuck, for example, and can suck and hold a wafer 30 (semiconductor wafer) placed at a suction port (not shown). A developer nozzle 12 and a first rinse liquid nozzle 13 are disposed above the center of the spin chuck 11. The developer nozzle 12 discharges the developer supplied from the developer supply device 18. The first rinse liquid nozzle 13 discharges the first rinse liquid (for example, pure water) supplied from the rinse liquid supply device 19 toward the surface of the wafer 30 as indicated by an arrow A in FIG.

  A case body 14 is disposed on the spin chuck 11 and a portion surrounding the side and lower side of the wafer 30 held by the spin chuck 11, and the development that has flowed out of the wafer 30 is provided at the lower end near the outer periphery of the case body 14. A drainage outlet 14a for discharging the liquid and the rinse liquid is provided.

  Inside the case body 14, a dish-shaped cup 15 is disposed in which the center side is cut out circularly when viewed from above. A ring-shaped convex portion 15a is formed on the inner peripheral side edge of the cup 15, and four second rinse liquid nozzles 16 are embedded in the convex portion 15a at regular intervals in the circumferential direction. Yes. The second rinse liquid nozzle 16 discharges the second rinse liquid (for example, pure water) supplied from the rinse liquid supply device 19 toward the back surface of the wafer 30 as shown by an arrow B in FIG.

  In order to prevent the dirty developing solution and the first rinsing solution on the front surface side of the wafer 30 from flowing around to the back surface side of the wafer 30, the edge of the outer periphery of the cup 15 has a wall shape from the upper surface of the cup 15. A protruding ring-shaped member 17 is provided. The ring-shaped member 17 forms an interval of about 1 mm with the wafer 30 held by the spin chuck 11. By discharging the rinsing liquid from the second rinsing liquid nozzle 16, the gap between the wafer 30 and the ring-shaped member 17 is closed by the second rinsing liquid, and the intrusion of the developer or the first rinsing liquid can be prevented. .

  A drainage discharge port 15 b for discharging the rinse liquid discharged from the second rinse liquid nozzle 16 is provided below the ring-shaped member 17. An exhaust port 14 b is provided at the lower end of the inner peripheral portion 15 c of the cup 15. The exhaust port 14b discharges the mist-like second rinsing liquid generated when the wafer 30 is rotated at a high speed and dried together with the exhaust. Thereby, it becomes difficult for mist to adhere to the back surface of the wafer 30, and the wafer 30 can be efficiently dried.

  The developing device 10 further includes a control device 21 connected to the developer supply device 18, the rinsing solution supply device 19, and the motor 20. The control device 21 controls the rotation operation of the spin chuck 11 and controls the developer nozzle 12. The discharge operation and the discharge operation of the first and second rinse liquid nozzles 13 and 16 are controlled.

  Hereinafter, the development process of the preliminary investigation using the above-described developing device 10 will be described.

  FIG. 3 is a table showing the developer cleaning process in the preliminary investigation, and FIG. 4 is a graph showing the number of rotations of the semiconductor wafer and the period of rinsing liquid supply in the cleaning process of FIG. In FIG. 4, an arrow with a symbol A <b> 1 indicates a first rinse liquid discharge period, and an arrow with a symbol B <b> 1 indicates a second rinse liquid discharge period. Moreover, the circle | round | yen which attached | subjected the code | symbol 1-5 in FIG. 4 respond | corresponds to the start timing of the 1st-5th process of FIG. 3, respectively.

  In the preliminary development process, first, prior to the cleaning process of FIGS. 3 and 4, the developer is discharged from the developer nozzle 12 of the developing device 10 to develop the photoresist. Here, the developing solution was dropped while the rotation of the wafer 30 was stopped, and the photoresist was developed for about 20 to 30 seconds.

  Next, the photoresist and the back surface of the wafer 30 are cleaned by the procedure shown in the first to fifth steps of FIGS.

  First, in the first step, the wafer 30 is cleaned while rotating at a rotational speed of 2000 rpm (round per minute) while discharging a rinse liquid such as pure water from the first rinse liquid nozzle 13 and the second rinse liquid nozzle 16. Went. Next, in the second step, the wafer 30 was washed for about 10 seconds while the number of rotations of the wafer 30 was reduced to 500 rpm while the rinse liquid was discharged from the first rinse liquid nozzle 13 and the second rinse liquid nozzle 16.

  Next, in the third step, the discharge of the rinse liquid from the first rinse liquid nozzle 13 and the second rinse liquid nozzle 16 is stopped. Thereafter, in the fourth step, the wafer 30 was dried by increasing the rotation speed of the wafer 30 to 4000 rpm. Finally, in the fifth step, the rotation of the wafer 30 was decelerated and stopped. From the viewpoint of improving the throughput of the development process, it is preferable to decelerate in as short a time as possible. Therefore, in the development process of the preliminary investigation, the speed was reduced at a rotational acceleration of −5000 rpm / s. In this specification, the rotational acceleration rpm / s means the rate of increase in the rotational speed rpm per second. When the rotational speed rpm increases gradually, the rotational acceleration becomes a positive value, and the rotational speed rpm is When it gradually decreases, the rotational acceleration becomes a negative value.

  The results of the preliminary survey described above will be described.

  FIG. 5 is a view showing the back surface of the semiconductor wafer obtained by the development process of the preliminary investigation, and FIG. 6 is a cross-sectional view showing a problem when dirt is attached to the back surface of the semiconductor wafer.

  As shown in FIG. 5, when the cleaning process of the preliminary investigation was performed, the dirt 39 a that appears to be due to the reattachment of the drainage liquid was visually confirmed on the back surface of the wafer 30.

  As shown in FIG. 6A, the dirt 39a adheres to the surface of the thermal oxide film 32 (or silicon nitride film or the like) formed on the back surface of the wafer 30. Therefore, as shown in FIG. 6B, after the device pattern 31a is formed, the dirt 39a serves as a mask for the thermal oxide film 32 in the step of etching and removing the thermal oxide film 32 from the back surface of the wafer 30. Therefore, there arises a problem that the portion of the thermal oxide film 32 to which the dirt 39a is adhered remains without being removed.

  As a result of various studies by the inventor of the present application, it was found in the above-described preliminary investigation that dirt adheres to the back surface of the wafer 30 due to the following reasons.

  FIGS. 7A and 7B are schematic views showing the cause of contamination on the back surface of the semiconductor wafer in the preliminary investigation. 7A shows the air flow on the wafer back side in the fourth step of FIG. 2, and FIG. 7B shows the air flow on the wafer back side in the fifth step of FIG. ing.

  In the fourth step of FIG. 2, the rinse liquid on the front and back surfaces of the wafer 30 is rotated at a high speed (4000 rpm) in order to shake off and remove. At this time, as shown in FIG. 7A, in the vicinity of the wafer 30, the air rotates together with the wafer 30 due to the viscosity, and the air flow toward the outside of the wafer 30 is generated by the centrifugal force due to the rotational movement. Air flows out of the gap between the wafer 30 and the ring-shaped member 17 by the air flow toward the outside of the wafer 30. Further, exhaust from the exhaust port 14b is also performed in order to prevent adhesion of the mist-like second rinse liquid. For this reason, an area inside the ring-shaped member 17 on the back surface side of the wafer 30 is negative pressure. Further, the drainage 40 that has not been discharged from the drainage discharge port 15b remains at the bottom of the cup 15.

  As shown in FIG. 7B, when the wafer 30 is decelerated at a rotational acceleration of −5000 rpm / s or less in the fifth step of FIG. 2, the air flow in the vicinity of the wafer 30 changes abruptly. Then, the flow of air toward the outside of the wafer 30 stops, and air flows from the gap between the ring-shaped member 17 and the wafer 30 toward a region inside the ring-shaped member 17 in a negative pressure state. Thereby, turbulent flow is generated in the region on the back side of the wafer 30, and the effluent 40 remaining on the bottom of the cup 15 is wound up by the turbulent flow and adheres to the back surface of the wafer 30 as dirt 39 a.

  In view of the above knowledge, it came to invent the embodiment shown below. Hereinafter, embodiments will be described with reference to the accompanying drawings.

(First embodiment)
FIG. 8 is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment, FIG. 9 is a diagram showing a cleaning process for a developer in the method for manufacturing a semiconductor device according to the first embodiment, and FIG. 9 is a graph showing the number of rotations of the semiconductor wafer and the rinsing liquid supply timing in the cleaning process 9. In FIG. 10, the arrow with the symbol A <b> 2 indicates the period for supplying the rinsing liquid to the front surface of the wafer, the arrow with the symbol B <b> 2 indicates the period for supplying the rinsing liquid with respect to the back surface of the wafer, The circles indicated correspond to the start timings of the first to seventh steps in FIG.

  In the first embodiment, the developing process is performed using the developing device 10 of the preliminary investigation shown in FIGS. 1 and 2, and the description of the developing device 10 is omitted. Hereinafter, the developing process of this embodiment will be described.

  First, as shown in FIG. 8, the developer is discharged from the developer nozzle to supply the developer to the photoresist on the surface of the wafer 30 (step S11). This process is basically the same as the development process of the preliminary investigation, and the developer is supplied to the photoresist for about 20 to 30 seconds while the rotation of the wafer 30 is stopped.

  Next, the wafer 30 is cleaned by the procedure shown in FIGS. 9 and 10 (and steps S12 to S16 in FIG. 8).

  First, while supplying a first rinse liquid (for example, pure water) to the surface of the wafer 30, the rotation speed of the wafer 30 is increased to 2000 rpm (first step, step S12). At this time, the rotational acceleration of the wafer 30 is +1000 rpm / s, and acceleration is performed over 2 seconds.

  Next, cleaning is performed for about 3 seconds while rotating the wafer 30 at 2000 rpm while supplying the first rinse liquid and the second rinse liquid (for example, pure water) to the front surface and the back surface of the wafer 30, respectively (second process) Step S13).

  In the first step and the second step described above, the rotational speed of the wafer 30 is set to a relatively high rotational speed of 2000 rpm, so that the dirty first rinse liquid containing a large amount of developer and the peeled photoresist is highly centrifuged. Can be shaken off with force. Thereby, it is possible to prevent the first rinsing liquid from flowing around to the back side of the wafer 30 due to contamination. Further, since the rinse liquid is also supplied to the back surface of the wafer 30 in the second step, it is possible to prevent the contaminated first rinse liquid from entering the back surface side of the wafer 30.

  Next, while the first and second rinse liquids are continuously supplied to the front and back surfaces of the wafer 30, the number of rotations of the wafer 30 is reduced to 500 rpm and cleaning is performed for about 10 seconds (third step). In this step, by cleaning for a longer time at a lower rotational speed than in the first and second steps, the photoresist and the back surface of the wafer 30 that could not be removed in the first and second steps are removed. Remove.

  After that, the discharge of the first rinse liquid from the first rinse liquid nozzle 13 is stopped, and the wafer 30 is rotated at 3000 rpm for about 2 seconds while the second rinse liquid from the second rinse liquid nozzle 16 is discharged. (4th process, step S14). In this step, since the discharge of the second rinse liquid is continued even after the discharge of the first rinse liquid is stopped, it is possible to prevent the dirty first rinse liquid from flowing around the back side of the wafer 30. Further, after the discharge of the first rinse liquid is stopped, the dirty first rinse liquid remaining on the surface of the wafer 30 is shaken off by the centrifugal force by increasing the number of rotations of the wafer 30, so that the first rinse is performed. It is possible to more effectively suppress the liquid from flowing around the back side of the wafer 30.

  Thereafter, the discharge of the second rinse liquid is stopped, and the rotation speed of the wafer 30 is set to 2500 rpm (fifth step, step S15).

  Subsequently, the wafer 30 is continuously rotated at a rotational speed of 2500 rpm for about 10 seconds, so that the first and second rinse liquids are removed by shaking, and the front and back surfaces of the wafer 30 are dried (sixth step).

  Finally, the rotation of the wafer 30 is decelerated and stopped (seventh step, step S18). In the present embodiment, the rotational acceleration at the time of deceleration of the wafer 30 is set to −1500 rpm / s, and it is decelerated more slowly than the rotational acceleration at the time of deceleration in the preliminary investigation −5000 rpm / s.

  Thus, the developing process of this embodiment is completed.

  FIG. 11 is a schematic diagram showing the air flow on the back side of the semiconductor wafer in the seventh step of FIG.

  In this embodiment, the wafer 30 is decelerated more slowly than in the preliminary investigation. As a result, as shown in FIG. 11, the change in the air flow on the back surface side of the wafer 30 during deceleration is more gentle. Further, since the rotational motion of the air in the vicinity of the wafer 30 is also slowly decelerated, the air flow flowing outside the wafer 30 gradually decreases and flows into the ring-shaped member 17 from the gap between the ring-shaped member 17 and the wafer 30. The air flow becomes gentle. Therefore, the generation of turbulent flow can be suppressed in the region on the back surface side of the wafer 30, so that the drainage 40 remaining on the bottom of the cup 15 can be prevented from rising, and adhesion of dirt to the back surface of the wafer 30 can be suppressed.

  The inventor of the present application actually performed the development process of the first embodiment described above, and as a result of examining the presence or absence of contamination on the back surface of the wafer 30, it was confirmed that the adhesion of contamination to the back surface of the wafer 30 was suppressed. It was. In particular, it has been confirmed that when the rotational acceleration of the wafer 30 is set to −5000 rpm / s or more, an effect can be obtained in preventing the adhesion of dirt to the back surface of the wafer 30.

(Second Embodiment)
FIG. 12 is a flowchart showing a method for manufacturing a semiconductor device according to the second embodiment, and FIG. 13 is a table showing a developing solution cleaning process in the method for manufacturing a semiconductor device according to the second embodiment. FIG. 14 is a graph showing the number of rotations of the semiconductor wafer and the period of rinsing liquid supply in the cleaning process of FIG. In FIG. 13, an arrow with a symbol A3 indicates a first rinse liquid supply period to the front surface of the wafer, and an arrow with a symbol B3 indicates a second rinse liquid supply period to the back surface of the wafer. Moreover, the circle | round | yen which attached | subjected the code | symbol 1-7 respond | corresponds to the start timing of the 1st-7th process of FIG. 9, respectively.

  Also in the second embodiment, the developing process is performed using the developing device 10 of the preliminary investigation shown in FIGS. Hereinafter, the developing process of this embodiment will be described.

  First, as shown in FIG. 12, the developer is discharged from the developer nozzle to supply the developer to the photoresist on the surface of the wafer 30 (step S21). This process is basically the same as the development process of the preliminary investigation, and the developer is supplied to the photoresist for about 20 to 30 seconds while the rotation of the wafer 30 is stopped.

  Next, the wafer 30 is cleaned by the procedure shown in FIGS. 13 and 14 (and steps S12 to S16 in FIG. 8).

  First, cleaning is performed by rotating the wafer 30 at a rotational speed of 2000 rpm while discharging the first rinse and the second rinse (first step, step S22). In this process, by setting the rotation speed of the wafer 30 to a relatively high rotation speed of 2000 rpm, similarly to the first process of the first embodiment, a high-concentration developer and peeled photo are utilized using a high centrifugal force. The first rinse liquid containing the resist is shaken off to prevent the back surface of the wafer 30 from being contaminated. Further, since the first and second rinse liquids are supplied to the front surface and the back surface of the wafer 30, it is possible to prevent the contaminated first rinse liquid from flowing around the back surface side of the wafer 30.

  Next, while discharging the first rinse and the second rinse, the wafer 30 is cleaned for about 10 seconds while rotating at a rotational speed of 500 rpm (second step). In this step, the surface of the wafer 30 that could not be removed in the first step can be removed by performing cleaning at a lower rotational speed than in the first step and taking a longer time.

  Thereafter, the discharge of the rinsing liquid from the first rinsing liquid nozzle 13 and the second rinsing liquid nozzle 16 is stopped (third step, step S23).

  Next, the number of rotations of the wafer 30 is increased to 2500 rpm, the rinsing liquid is removed and the wafer 30 is dried for about 20 seconds (fourth step, step S24).

  Next, the first stage of the wafer 30 is decelerated (fifth step, step S25). Here, the rotational acceleration of the wafer 30 is set to −1000 rpm / s, the rotational speed is reduced to 1000 rpm in the first 1.5 seconds, and then maintained at 1000 rpm for 0.5 seconds.

  Next, the second stage of the wafer 30 is decelerated (sixth step, step S26). In the second stage of deceleration, the rotational acceleration of the wafer 30 is reduced to 500 rpm at −1000 rpm / s.

  Thereafter, the third stage of the wafer 30 is decelerated to stop the rotation of the wafer 30 (seventh step, step S27). In the third stage of deceleration, the rotational acceleration of the wafer 30 was set to -5000 rpm / s.

  The development process of the second embodiment is completed by the above process.

  In the present embodiment, the wafer 30 is decelerated stepwise as shown in the fifth to seventh steps. Even in such a stepwise deceleration, the deceleration is slower than that in the preliminary investigation, and the generation of turbulent flow in the region on the back surface side of the wafer 30 can be suppressed.

  The inventor of the present application actually performed the developing process of the second embodiment, and observed dirt on the back surface of the wafer. As a result, it was confirmed that the stain on the back surface of the wafer 30 was reduced by the development process of the second embodiment as compared with the development process of the preliminary investigation.

  The following additional notes are disclosed for each embodiment described above.

(Additional remark 1) The step which develops the photoresist apply | coated to the surface of a semiconductor wafer,
After the development, while the semiconductor wafer is rotating, the second rinse liquid is discharged onto the back surface of the semiconductor wafer while discharging the first rinse liquid onto the photoresist. And cleaning the back surface of the semiconductor wafer;
Stopping the discharge of the first rinse liquid and the discharge of the second rinse liquid in a state where the semiconductor wafer is rotated after the cleaning;
After stopping the discharge of the first rinse liquid and the discharge of the second rinse liquid, controlling the rotational acceleration of the semiconductor wafer and decelerating and stopping the rotation of the semiconductor wafer;
A method for manufacturing a semiconductor device, comprising:

  (Supplementary note 2) The semiconductor device manufacturing method according to supplementary note 1, wherein in the step of stopping the rotation of the semiconductor wafer, the rotational acceleration is set to −5000 (rpm / s) or more.

  (Supplementary note 3) The method of manufacturing a semiconductor device according to supplementary note 1, wherein in the step of stopping the rotation of the semiconductor wafer, the rotation of the semiconductor wafer is decelerated stepwise.

  (Supplementary Note 4) In the step of stopping the discharge of the first rinse liquid and the discharge of the second rinse liquid, the discharge of the second rinse liquid is stopped after the discharge of the first rinse liquid is stopped. The method of manufacturing a semiconductor device according to attachment 1, wherein the semiconductor device is stopped.

  (Additional remark 5) The rotation speed of the said semiconductor wafer is increased after stopping discharge of the said 1st rinse liquid, The manufacturing method of the semiconductor device of Additional remark 4 characterized by the above-mentioned.

  (Appendix 6) In the step of cleaning the photoresist and the back surface of the semiconductor wafer, the rotational speed of the semiconductor wafer is increased, and after a predetermined time has elapsed, the rotational speed is decreased. The manufacturing method of the semiconductor device as described in 2 ..

  (Supplementary note 7) In the step of decelerating and stopping the rotation of the semiconductor wafer, the space inside the ring member provided close to the back surface of the semiconductor substrate is exhausted. A method for manufacturing a semiconductor device.

  DESCRIPTION OF SYMBOLS 10 ... Developing apparatus, 11 ... Spin chuck, 11a ... Rotating shaft, 12 ... Developer nozzle, 13 ... First rinse liquid nozzle, 14 ... Case body, 14a ... Drain outlet, 14b ... Exhaust outlet, 15 ... Cup , 15a ... convex part, 15b ... drainage discharge port, 15c ... inner peripheral part, 16 ... second rinse liquid nozzle, 17 ... ring-shaped member, 18 ... developer supply apparatus, 19 ... rinse liquid supply apparatus, 20 ... Motor 21... Control device 30. Semiconductor wafer 31. Etched film 33 33 Photoresist pattern 31 a Device pattern 39 a Dirt 40 Drainage

Claims (4)

A step of developing the photoresist applied to the surface of the semiconductor wafer,
After the development, while the semiconductor wafer is rotating, the second rinse liquid is discharged onto the back surface of the semiconductor wafer while discharging the first rinse liquid onto the photoresist. a step of cleaning the back surface of the semiconductor wafer and,
After the cleaning, in a state where the semiconductor wafer is rotating, the discharge of the first rinse liquid is stopped, and after the discharge of the first rinse liquid is stopped, the discharge of the second rinse liquid is stopped. And a process of
After stopping the discharge of the discharge and the second rinse solution of the first rinse liquid, while controlling the rotational acceleration of said semiconductor wafer, a step of stopping by decelerating the rotation of the semiconductor wafer,
A method for manufacturing a semiconductor device, comprising: The method of manufacturing a semiconductor device according to claim 1, wherein in the step of stopping the rotation of the semiconductor wafer, the rotational acceleration is set to −5000 (rpm / s) or more. 2. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of stopping the rotation of the semiconductor wafer, the rotation of the semiconductor wafer is decelerated stepwise. Wherein the discharge of the first rinsing liquid after stopping method of manufacturing a semiconductor device according to claim 1, characterized in that increasing the rotational speed of the semiconductor wafer.

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