TW201830571A - Device for processing single substrate - Google Patents
Device for processing single substrate Download PDFInfo
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- TW201830571A TW201830571A TW106137610A TW106137610A TW201830571A TW 201830571 A TW201830571 A TW 201830571A TW 106137610 A TW106137610 A TW 106137610A TW 106137610 A TW106137610 A TW 106137610A TW 201830571 A TW201830571 A TW 201830571A
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Abstract
Description
本發明係關於一種單基板處理裝置，特別是關於一種單基板處理裝置的基板載台。The present invention relates to a single substrate processing apparatus, and more particularly, to a substrate stage of a single substrate processing apparatus.
在基板處理技術中，藉由載台吸附住基板的中心，以固定並帶動基板旋轉，藉此進行基板之濕式處理製程。然而，基板在經過多道製程加工後，會累積許多應力或有細微裂痕。因此，故當基板傳送至載台時，極有可能因基板與載台接觸力或產生碰撞，或者在啟動吸引力後，造成基板因為應力或裂痕而產生破損。In the substrate processing technology, the center of the substrate is adsorbed by a stage to fix and drive the substrate to rotate, thereby performing a wet processing process for the substrate. However, after the substrate is processed through multiple processes, it may accumulate a lot of stress or have fine cracks. Therefore, when the substrate is transferred to the stage, it is very likely that the substrate may be damaged due to stress or cracks due to the contact force or collision between the substrate and the stage, or after the attraction force is activated.
目前雖有在載台上加裝軟性的凸塊，欲避免基板與硬質的載台直接接觸，然而其效果並不佳。並且，在啟動吸引力時，基板受到吸引仍會擠壓軟性的凸塊，而軟性的凸塊過度壓縮後，所能產生的緩衝效果有限，故無法提供適當的緩衝，因此現有技術確有改進之必要。At present, although soft bumps are added on the stage to avoid direct contact between the substrate and the rigid stage, the effect is not good. In addition, when the substrate is attracted, the soft bumps will still be squeezed when the substrate is attracted. However, after the soft bumps are over-compressed, the cushioning effect can be limited, so it cannot provide proper cushioning, so the existing technology does improve. Necessary.
有鑒於上述課題，本發明提供一種單基板處理裝置，其包括底座及基板載台，基板載台包括固定軸、承載部及緩衝結構，固定軸連接於底座，並具有氣壓通道，承載部具有與氣壓通道相互連通的通孔，而緩衝結構設置於承載部，且緩衝結構的一表面對應於通孔，另一表面對應於基板，以解決習知載台無法提供適當之緩衝效果的問題。In view of the above problems, the present invention provides a single substrate processing apparatus including a base and a substrate stage. The substrate stage includes a fixed shaft, a bearing portion, and a buffer structure. The fixed shaft is connected to the base and has a gas pressure channel. The air pressure channels communicate with each other through holes, and the buffer structure is disposed on the bearing portion, and one surface of the buffer structure corresponds to the through hole and the other surface corresponds to the substrate, in order to solve the problem that the conventional stage cannot provide an appropriate buffer effect.
本發明提供一種單基板處理裝置，用於對一基板進行溼式處理。單基板處理裝置包括一底座、一基板載台以及一收集單元。基板載台包括一固定軸、一承載部及一緩衝結構。固定軸連接於底座，固定軸的內部具有一氣壓通道。承載部連接於固定軸，並承載基板。承載部具有至少一通孔，通孔與氣壓通道相互連通。緩衝結構設置於承載部，且緩衝結構的一表面對應於通孔，另一表面對應於基板。收集單元設置於基板載台之外側，收集基板經濕式處理之一處理液。The present invention provides a single substrate processing device for performing wet processing on a substrate. The single substrate processing apparatus includes a base, a substrate stage, and a collection unit. The substrate stage includes a fixed shaft, a bearing portion and a buffer structure. The fixed shaft is connected to the base, and the inside of the fixed shaft has a pneumatic channel. The carrying portion is connected to the fixed shaft and carries the substrate. The bearing portion has at least one through hole, and the through hole and the air pressure channel communicate with each other. The buffer structure is disposed on the bearing portion, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate. The collecting unit is disposed outside the substrate stage, and collects a processing solution of the substrate through a wet process.
本發明另提供一種單基板處理裝置，用於對一基板進行校準。單基板處理裝置包括一底座、一基板載台以及一校準單元。基板載台包括一固定軸、一承載部及一緩衝結構。固定軸連接於底座，固定軸的內部具有一氣壓通道。承載部連接固定軸，並承載基板，承載部具有至少一通孔，通孔與氣壓通道相互連通。緩衝結構設置於承載部，且緩衝結構的一表面對應於通孔，另一表面對應於基板。校準單元，控制基板載台旋轉基板，並對基板進行校準。The present invention further provides a single substrate processing device for calibrating a substrate. The single substrate processing apparatus includes a base, a substrate stage and a calibration unit. The substrate stage includes a fixed shaft, a bearing portion and a buffer structure. The fixed shaft is connected to the base, and the inside of the fixed shaft has a pneumatic channel. The bearing portion is connected to the fixed shaft and carries the substrate. The bearing portion has at least one through hole, and the through hole and the air pressure channel communicate with each other. The buffer structure is disposed on the bearing portion, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate. The calibration unit controls the substrate stage to rotate the substrate and calibrates the substrate.
根據本發明之一實施例，緩衝結構包括至少一可動式緩衝部，可動式緩衝部覆蓋於通孔，基板載台更包括一控制單元，其控制可動式緩衝部於一第一高度及一第二高度之間移動。According to an embodiment of the present invention, the buffer structure includes at least one movable buffer portion, the movable buffer portion covers the through hole, and the substrate stage further includes a control unit that controls the movable buffer portion at a first height and a first height. Move between two heights.
根據本發明之一實施例，當控制單元控制可動式緩衝層部上升至第一高度，可動式緩衝部接觸基板，當控制單元控制可動式緩衝部下降至第二高度，可動式緩衝部與基板形成一負壓區域，可動式緩衝部吸附基板。According to an embodiment of the present invention, when the control unit controls the movable buffer layer portion to rise to the first height, the movable buffer portion contacts the substrate, and when the control unit controls the movable buffer portion to descend to the second height, the movable buffer portion and the substrate A negative pressure region is formed, and the movable buffering portion sucks the substrate.
根據本發明之一實施例，緩衝結構更包括至少一固定式緩衝部，當控制單元控制可動式緩衝部下降至第二高度，可動式緩衝部與基板形成負壓區域，固定式緩衝部接觸基板。According to an embodiment of the present invention, the buffer structure further includes at least one fixed buffer portion. When the control unit controls the movable buffer portion to descend to the second height, the movable buffer portion forms a negative pressure region with the substrate, and the fixed buffer portion contacts the substrate. .
根據本發明之一實施例，控制單元為一氣壓控制單元，其控制氣壓通道於一負壓狀態及一非負壓狀態之間轉換，以控制可動式緩衝部於第一高度與第二高度之間移動。According to an embodiment of the present invention, the control unit is an air pressure control unit, which controls the air pressure channel to switch between a negative pressure state and a non-negative pressure state to control the movable buffer portion between the first height and the second height. Between moves.
根據本發明之一實施例，當氣壓控制單元控制氣壓通道轉換至負壓狀態，可動式緩衝部下降至第二高度，固定軸與可動式緩衝部共同吸附基板。According to an embodiment of the present invention, when the air pressure control unit controls the air pressure channel to switch to a negative pressure state, the movable buffer portion is lowered to a second height, and the fixed shaft and the movable buffer portion jointly adsorb the substrate.
根據本發明之一實施例，固定軸設置於基板載台之中央區域，且氣壓通道之一開口位於承載部之中央區域，可動式緩衝部設置於開口的外圍，當氣壓控制單元控制氣壓通道轉換至負壓狀態，可動式緩衝部下降至第二高度，氣壓通道之開口與可動式緩衝部共同吸附基板。According to an embodiment of the present invention, the fixed shaft is disposed in the central region of the substrate stage, and one of the openings of the air pressure channel is located in the central region of the bearing portion. The movable buffer portion is provided on the periphery of the opening. In the negative pressure state, the movable buffer portion is lowered to the second height, and the opening of the air pressure channel and the movable buffer portion jointly adsorb the substrate.
根據本發明之一實施例，可動式緩衝部為一環型結構，環繞設置於氣壓通道之開口的外圍。According to an embodiment of the present invention, the movable buffer portion is a ring-shaped structure that surrounds the periphery of the opening of the air pressure channel.
根據本發明之一實施例，基板載台更包括一外環緩衝結構，設置於基板載台之一外側壁，且外環緩衝結構之一頂緣接觸基板。According to an embodiment of the present invention, the substrate stage further includes an outer ring buffer structure disposed on an outer side wall of the substrate stage, and a top edge of the outer ring buffer structure contacts the substrate.
根據本發明之一實施例，單基板處理裝置更包括一流體清洗單元，設置於底座，且環繞設置於基板載台的外圍。According to an embodiment of the present invention, the single substrate processing apparatus further includes a fluid cleaning unit, which is disposed on the base and surrounds the periphery of the substrate stage.
根據本發明之一實施例，單基板處理裝置更包括一流體加速單元，可旋轉式設置於底座，且環繞設置於流體清洗單元的外圍。According to an embodiment of the present invention, the single substrate processing apparatus further includes a fluid acceleration unit, which is rotatably disposed on the base and is disposed around the periphery of the fluid cleaning unit.
承上所述，依據本發明之單基板處理裝置，不論是用於對基板進行濕式處理（第一實施例）或是進行校準（第二實施例），其皆包括底座及基板載台。其中，基板載台包括固定軸、承載部及緩衝結構，固定軸連接於底座，並具有氣壓通道，承載部具有與氣壓通道相互連通的通孔。緩衝結構設置於承載部，且緩衝結構的一表面對應於通孔，另一表面對應於基板，故當氣壓通道為負壓狀態時，可同時對緩衝結構產生負壓的吸引力，使緩衝結構往通孔的方向移動或壓縮。設置緩衝結構可避免對基板產生額外的應力，以達到緩衝基板、避免基板破裂的效果，及兼具吸附固定基板。As mentioned above, the single substrate processing apparatus according to the present invention includes a base and a substrate stage, whether it is used for wet processing of a substrate (first embodiment) or calibration (second embodiment). The substrate stage includes a fixed shaft, a bearing portion, and a buffer structure. The fixed shaft is connected to the base and has a gas pressure channel. The bearing portion has a through hole communicating with the gas pressure channel. The buffer structure is disposed on the bearing portion, and one surface of the buffer structure corresponds to the through hole and the other surface corresponds to the substrate. Therefore, when the air pressure channel is in a negative pressure state, the negative pressure attraction to the buffer structure can be generated at the same time, so that the buffer structure Move or compress in the direction of the through hole. Setting the buffer structure can avoid generating extra stress on the substrate, so as to achieve the effects of buffering the substrate, avoiding cracking of the substrate, and simultaneously adsorbing and fixing the substrate.
為能讓 貴審查委員能更瞭解本發明之技術內容，特舉較佳具體實施例說明如下。In order to make your reviewing committee better understand the technical content of the present invention, specific preferred embodiments are described below.
圖1A係本發明之第一實施例之單基板處理裝置之示意圖，圖1B為圖1A所示之基板載體之立體示意圖，以下請同時參考圖1A及圖1B所示。首先，第一實施例之單基板處理裝置1可用於對一基板90進行溼式處理，其中，單基板處理裝置1包括一底座10、一基板載台20以及一收集單元30。基板載台20用於承載並固定基板90，而收集單元30設置於基板載台20之外側，並可以升降以收集基板90經濕式處理後所噴散的處理液100（可先參考圖5所示），其中有關收集單元30之形式及驅動方法，本發明並不限制。FIG. 1A is a schematic view of a single substrate processing apparatus according to a first embodiment of the present invention, and FIG. 1B is a schematic perspective view of the substrate carrier shown in FIG. 1A. Please refer to FIG. 1A and FIG. 1B at the same time. First, the single substrate processing apparatus 1 of the first embodiment can be used to perform wet processing on a substrate 90. The single substrate processing apparatus 1 includes a base 10, a substrate stage 20, and a collection unit 30. The substrate stage 20 is used to carry and fix the substrate 90, and the collection unit 30 is disposed outside the substrate stage 20, and can be raised and lowered to collect the processing liquid 100 sprayed from the substrate 90 after wet processing (refer to FIG. 5 first) (Shown), where the form and driving method of the collection unit 30 are not limited by the present invention.
在本實施例中，基板載台20包括一固定軸21、一承載部22及一緩衝結構23。其中，基板載台20藉由固定軸21連接於底座10，而承載部22連接於固定軸21，用以承載並固定基板90。本實施例之基板載台20係以負壓吸附的方式固定基板90，對應的，固定軸21的內部具有一氣壓通道211，且氣壓通道211的開口212開設於承載部22。較佳的，固定軸21設置於基板載台20之中央區域，且氣壓通道211的開口212亦位於承載部22的中央區域，例如，位於承載部22的中心。In this embodiment, the substrate stage 20 includes a fixed shaft 21, a bearing portion 22 and a buffer structure 23. The substrate stage 20 is connected to the base 10 through a fixed shaft 21, and the supporting portion 22 is connected to the fixed shaft 21 to carry and fix the substrate 90. In this embodiment, the substrate stage 20 fixes the substrate 90 in a negative pressure manner. Correspondingly, the inside of the fixed shaft 21 has a gas pressure channel 211, and the opening 212 of the gas pressure channel 211 is opened in the bearing portion 22. Preferably, the fixed shaft 21 is disposed in the central region of the substrate stage 20, and the opening 212 of the air pressure channel 211 is also located in the central region of the bearing portion 22, for example, in the center of the bearing portion 22.
詳細而言，本實施例之基板載台20更包括一控制單元24（圖1A係以方塊圖簡單表示），較佳為氣壓控制單元，可控制氣壓通道211於一負壓狀態及一非負壓狀態之間轉換，故可藉由調控氣壓通道211內的壓力以緩衝地承載基板90並利用吸附的方式固定基板90。具體而言，基板載台20未承載基板90時，氣壓通道211為非負壓狀態（包括同外界大氣壓力之常壓狀態、或大於大氣壓力之正壓狀態），當基板90置於承載部22後，控制單元24可將氣壓通道211的內部壓力轉換為負壓狀態，以吸附並固定基板90。另外，本實施例之單基板處理裝置1 係用於溼式處理製程，較佳的，固定軸21可旋轉地連接於底座10，使基板載台20可固定並旋轉基板90。In detail, the substrate stage 20 of this embodiment further includes a control unit 24 (shown simply as a block diagram in FIG. 1A), preferably an air pressure control unit, which can control the air pressure channel 211 in a negative pressure state and a non-negative state. The pressure state is switched between, so the substrate 90 can be buffered by adjusting the pressure in the air pressure channel 211, and the substrate 90 can be fixed by adsorption. Specifically, when the substrate stage 20 does not carry the substrate 90, the air pressure channel 211 is in a non-negative pressure state (including a normal pressure state with the external atmospheric pressure or a positive pressure state greater than the atmospheric pressure). After 22, the control unit 24 may convert the internal pressure of the air pressure channel 211 into a negative pressure state to adsorb and fix the substrate 90. In addition, the single substrate processing apparatus 1 of this embodiment is used for a wet processing process. Preferably, the fixed shaft 21 is rotatably connected to the base 10 so that the substrate stage 20 can fix and rotate the substrate 90.
圖2A為圖1所示之基板載體的放大圖，且圖2A所示之氣壓通道211係於非負壓狀態，請搭配參考圖2A所示。本實施例之承載部22具有至少一通孔221，通孔221與氣壓通道211相互連通。又，緩衝結構23設置於承載部22，且緩衝結構23的一表面對應於通孔221，另一表面對應於基板90。較佳的，本實施例之緩衝結構23可為一彈性材質，例如軟性矽膠或橡膠類等可以產生形變之材質。於外觀上設計亦可設計為可壓縮的構型，如圖2A所示之緩衝結構23部分（可動式緩衝部231）為半圓形或拱形，其中可動式緩衝部231於此狀態為緩衝地承載基板90。另外，緩衝結構23亦可為一導電材質，如金屬或石墨等材質，而兼具有消除靜電功能。又，亦可在緩衝結構23的製作中添加碳，調整緩衝結構23電阻值成為靜電消散材料，以防止靜電量聚集，亦即可降低基板90旋轉時與空氣或液體摩擦所產生的靜電。FIG. 2A is an enlarged view of the substrate carrier shown in FIG. 1, and the air pressure channel 211 shown in FIG. 2A is in a non-negative pressure state. Please refer to FIG. 2A for reference. The carrying portion 22 in this embodiment has at least one through hole 221, and the through hole 221 and the air pressure channel 211 communicate with each other. In addition, the buffer structure 23 is disposed on the bearing portion 22, and one surface of the buffer structure 23 corresponds to the through hole 221 and the other surface corresponds to the substrate 90. Preferably, the buffer structure 23 of this embodiment may be an elastic material, such as a material that can be deformed, such as soft silicone or rubber. The appearance design can also be designed as a compressible configuration. As shown in FIG. 2A, the portion 23 of the buffer structure (movable buffer portion 231) is semi-circular or arched, and the movable buffer portion 231 is a buffer in this state.地 carrier substrate 90. In addition, the buffer structure 23 may also be a conductive material, such as metal or graphite, and also has a function of eliminating static electricity. In addition, carbon can be added to the production of the buffer structure 23, and the resistance value of the buffer structure 23 can be adjusted to become a static dissipative material to prevent the accumulation of static electricity, which can also reduce the static electricity generated by friction between the substrate 90 and air or liquid when the substrate 90 rotates.
當氣壓通道211為負壓狀態時，由於通孔221與氣壓通道211相互連通，故可同時對緩衝結構23產生負壓的吸引力，使緩衝結構23往通孔221的方向移動或壓縮，如圖2B所示，圖2B為圖2A所示之氣壓通道於負壓狀態的示意圖。藉此避免對基板90產生額外的應力，以達到緩衝地承載基板90的效果及吸附固定基板90。When the air pressure channel 211 is in a negative pressure state, since the through hole 221 and the air pressure channel 211 communicate with each other, a negative pressure attractive force can be generated on the buffer structure 23 at the same time, so that the buffer structure 23 moves or compresses in the direction of the through hole 221, such as As shown in FIG. 2B, FIG. 2B is a schematic diagram of the air pressure channel shown in FIG. 2A in a negative pressure state. This prevents additional stress on the substrate 90, so as to achieve the effect of supporting the substrate 90 in a buffering manner and adsorbing and fixing the substrate 90.
詳細而言，緩衝結構23包括一可動式緩衝部231，即為前述之彈性材質，且剖面為可壓縮的結構（例如半圓形、或拱形結構）。可動式緩衝部231覆蓋於通孔221，故當控制單元24控制氣壓通道211於負壓狀態及非負壓狀態之間轉換時，亦可以同時控制可動式緩衝部231於第一高度H1與第二高度H2之間移動。須說明的是，於此係指可動式緩衝部231的中點可於第一高度H1與第二高度H2之間移動，並以通孔221的底緣為基準定義第一高度H1及第二高度H2。In detail, the buffer structure 23 includes a movable buffer portion 231, which is the aforementioned elastic material and has a compressible structure (such as a semi-circular or arched structure) in cross section. The movable buffer portion 231 covers the through hole 221, so when the control unit 24 controls the pressure channel 211 to switch between a negative pressure state and a non-negative pressure state, the movable buffer portion 231 can also be controlled at the first height H1 and the first height. Move between two heights H2. It should be noted that the middle point of the movable buffer portion 231 can be moved between the first height H1 and the second height H2, and the first height H1 and the second height are defined based on the bottom edge of the through hole 221 Height H2.
如圖2A所示，藉由可動式緩衝部231的材質特性，當控制單元24控制氣壓通道211轉換為非負壓狀態（例如常壓或正壓）的同時，藉由通孔221提供氣壓至可動式緩衝部231，以控制可動式緩衝部231的中點上升至第一高度H1。此時，可動式緩衝部231接觸基板90，提供承載基板90的部分力量，並可避免基板90與硬質的承載部22接觸。又，由於此時的基板載台20並未吸附基板90，故基板90可以自由輸出入基板載台20。As shown in FIG. 2A, due to the material characteristics of the movable buffer portion 231, when the control unit 24 controls the air pressure channel 211 to switch to a non-negative pressure state (such as normal pressure or positive pressure), the air pressure is provided through the through hole 221 to The movable buffer portion 231 controls the midpoint of the movable buffer portion 231 to rise to the first height H1. At this time, the movable buffer portion 231 contacts the substrate 90 to provide part of the force of the carrying substrate 90, and can prevent the substrate 90 from contacting the rigid carrying portion 22. In addition, since the substrate stage 20 does not attract the substrate 90 at this time, the substrate 90 can be freely input and output to and from the substrate stage 20.
如圖2B所示，當控制單元24將氣壓通道211轉換至負壓狀態的同時，亦控制可動式緩衝部231產生形變，而使可動式緩衝部231的中點下降至第二高度H2。此時，固定軸21的氣壓通道211可透過開口212以吸附基板90，同時，因基板90緊貼於承載部22，使可動式緩衝部231與基板90之間形成一負壓區域V，亦可協助吸附基板90。換言之，固定軸21與可動式緩衝部231共同吸附基板90，藉此將基板90固定於基板載台20，而可續行濕式處理程序。透過氣壓的控制讓可動式緩衝部231上升或下降，以達到緩衝基板90的效果，並可減少基板90因應力或裂痕而出現破裂。氣壓通道211的開口212開設於承載部22的中心，與可動式緩衝部231共同吸附住基板90，更可防止基板90因旋轉而產生位移。As shown in FIG. 2B, when the control unit 24 switches the air pressure channel 211 to a negative pressure state, it also controls the movable buffer portion 231 to deform, so that the midpoint of the movable buffer portion 231 is lowered to the second height H2. At this time, the air pressure passage 211 of the fixed shaft 21 can penetrate the opening 212 to attract the substrate 90, and at the same time, because the substrate 90 is closely attached to the carrying portion 22, a negative pressure region V is formed between the movable buffer portion 231 and the substrate 90, It can assist in attracting the substrate 90. In other words, the fixed shaft 21 and the movable buffer portion 231 collectively adsorb the substrate 90, thereby fixing the substrate 90 to the substrate stage 20, and the wet processing procedure can be continued. Through the control of the air pressure, the movable buffer portion 231 is raised or lowered so as to achieve the effect of buffering the substrate 90 and reduce the occurrence of cracks in the substrate 90 due to stress or cracks. The opening 212 of the air pressure passage 211 is opened at the center of the bearing portion 22, and the substrate 90 is adsorbed together with the movable buffer portion 231, and the substrate 90 can be prevented from being displaced due to rotation.
在本實施例中，可動式緩衝部231為一環型結構，以同心圓的方式環繞設置於氣壓通道211之開口212的外圍，如圖1B所示。在其他實施例中，可動式緩衝部231a亦可以為多個單元所組成的環形結構，如圖3所示，圖3為圖2所示之緩衝結構之另一實施態樣的示意圖。換言之，圖1B所示之可動式緩衝部231為連續的環型結構，而圖3所示之可動式緩衝部231a為不連續、分段的結構，其結構形狀，本發明並不限制。In this embodiment, the movable buffer portion 231 is a ring-shaped structure, and surrounds the periphery of the opening 212 provided in the air pressure channel 211 in a concentric manner, as shown in FIG. 1B. In other embodiments, the movable buffer portion 231a may also be a ring structure composed of a plurality of units, as shown in FIG. 3, and FIG. 3 is a schematic diagram of another embodiment of the buffer structure shown in FIG. 2. In other words, the movable cushioning portion 231 shown in FIG. 1B has a continuous ring structure, and the movable cushioning portion 231 a shown in FIG. 3 has a discontinuous, segmented structure. The shape of the structure is not limited by the present invention.
復參考圖2A及圖2B所示，較佳的，緩衝結構23亦包括至少一固定式緩衝部232，本實施例係以複數個固定式緩衝部232為例說明，並設置於承載部22。固定式緩衝部232的設置，可增加吸附基板90時的緩衝效果。詳細而言，當控制單元24控制可動式緩衝部231之中點下降至第二高度H2時，固定式緩衝部232可接觸基板90，以減少基板90與硬質的承載部22的接觸面積。因此，當基板90於吸附狀態時，亦可藉由固定式緩衝部232達到良好的緩衝效果。As shown in FIG. 2A and FIG. 2B again, preferably, the buffer structure 23 also includes at least one fixed buffer portion 232. In this embodiment, a plurality of fixed buffer portions 232 are taken as an example and are provided on the bearing portion 22. The provision of the fixed buffer portion 232 can increase the buffer effect when the substrate 90 is sucked. In detail, when the control unit 24 controls the movable buffer portion 231 to drop to a second height H2, the fixed buffer portion 232 may contact the substrate 90 to reduce the contact area between the substrate 90 and the rigid supporting portion 22. Therefore, when the substrate 90 is in the adsorption state, a good buffering effect can also be achieved by the fixed buffering portion 232.
本發明對於固定式緩衝部232的數量及設置方式並無特別限制，較佳的，可具有二條以上的固定式緩衝部232，並分別設置於可動式緩衝部231的內側及外側。換言之，二條以上（前述之可動式緩衝部231的內側及外側）的固定式緩衝部232可共同形成溝槽狀結構，而溝槽內可設置可動式緩衝部231。另外，如同可動式緩衝部231的排列方式，固定式緩衝部232亦可為連續或不連續的結構（圖1B以不連續的環狀結構，並同樣以開口212為圓心，呈同心圓式排列為例）。The present invention does not specifically limit the number and arrangement of the fixed buffer portions 232. Preferably, the fixed buffer portions 232 may have two or more fixed buffer portions 232, and are respectively provided inside and outside the movable buffer portion 231. In other words, two or more fixed buffer portions 232 (inside and outside of the aforementioned movable buffer portion 231) may form a groove-like structure together, and the movable buffer portion 231 may be provided in the groove. In addition, like the arrangement of the movable cushioning portion 231, the fixed cushioning portion 232 can also be a continuous or discontinuous structure (Figure 1B is a discontinuous ring structure, and also uses the opening 212 as the center of the circle, arranged in a concentric circle. For example).
圖4為圖1A所示之基板載台之另一實施態樣的示意圖，請參考圖4所示。當基板90b具有或凹或凸之不規則形的弧度時，基板載台20b更可包括一外環緩衝結構25b，其設置於基板載台20b之一外側壁201b，且外環緩衝結構25b之一頂緣251b接觸基板90b。藉由外環緩衝結構25b的頂緣251b與不平整的基板90b相互接觸，除了協助承載基板90b以外，更可使基板載台20b與基板90b之間形成封閉的空間，讓固定軸21b的氣壓通道211b可透過開口212b吸附住基板90b，並可降低具有不規則弧度之基板90b在製程中產生破裂的情形。在本實施例中，外環緩衝結構25b係設置於承載部22b的外側壁201b，且外環緩衝結構25b之底部的厚度較厚。外環緩衝結構25b亦可為其他構型，本發明並不限制，僅須使外環緩衝結構25b之頂緣251b可接觸基板90b，讓基板載台20b與基板90b之間可形成封閉的空間即可。FIG. 4 is a schematic diagram of another embodiment of the substrate stage shown in FIG. 1A. Please refer to FIG. 4. When the substrate 90b has an irregular arc with a concave or convex shape, the substrate stage 20b may further include an outer ring buffer structure 25b, which is disposed on an outer side wall 201b of the substrate stage 20b, and the outer ring buffer structure 25b A top edge 251b contacts the substrate 90b. By contacting the top edge 251b of the outer ring buffer structure 25b with the uneven substrate 90b, in addition to helping to carry the substrate 90b, a closed space can be formed between the substrate stage 20b and the substrate 90b, and the air pressure of the fixed shaft 21b can be fixed. The channel 211b can adsorb the substrate 90b through the opening 212b, and can reduce the occurrence of cracks in the substrate 90b with irregular arcs during the manufacturing process. In this embodiment, the outer ring buffer structure 25b is disposed on the outer side wall 201b of the bearing portion 22b, and the bottom of the outer ring buffer structure 25b is thicker. The outer ring buffer structure 25b can also have other configurations, and the present invention is not limited, and only the top edge 251b of the outer ring buffer structure 25b can contact the substrate 90b, so that a closed space can be formed between the substrate stage 20b and the substrate 90b. Just fine.
圖5為本發明之第一實施例之單基板處理裝置之另一實施態樣的示意圖，請參考圖5所示。須說明的是，本說明書將用於濕式處理的單基板處理裝置1、1c稱為第一實施例，而用於校準的單基板處理裝置1d、1e稱為第二實施例（後續進一步說明）。在本實施例中，單基板處理裝置1c更包括一流體清洗單元40c，設置於底座10c，且環繞及固定設置於基板載台20c的外圍。在濕處理程序中，流體清洗單元40c會提供需要的處理液100以清洗基板90c，清洗後的處理液100排放至基板載台20c外圍之收集單元（為求圖面簡潔而未繪製，可參考圖1A之收集單元30）進行收集。較佳的，單基板處理裝置1c更包括一流體加速單元50c，其旋轉式設置於底座10c，且環繞設置於流體清洗單元40c的外圍。其中，流體加速單元50c可控制轉速，相對於基板載台20c進行轉動，流體加速單元50c在承接由基板載台20c旋轉排出之處理液100後，進一步加速轉動以將處理液100向外排出至收集單元30（同前說明，請參考圖1A所示），以達成處理液100有效排出的功效。FIG. 5 is a schematic diagram of another embodiment of the single substrate processing apparatus according to the first embodiment of the present invention. Please refer to FIG. 5. It should be noted that the single substrate processing apparatuses 1 and 1c used for wet processing are referred to as the first embodiment in this specification, and the single substrate processing apparatuses 1d and 1e used for calibration are referred to as the second embodiment (further explanation will be described later) ). In this embodiment, the single substrate processing apparatus 1c further includes a fluid cleaning unit 40c, which is disposed on the base 10c and is disposed around and fixedly disposed on the periphery of the substrate stage 20c. In the wet processing procedure, the fluid cleaning unit 40c will provide the required processing liquid 100 to clean the substrate 90c. The cleaned processing liquid 100 is discharged to the collection unit on the periphery of the substrate stage 20c (not shown for simplicity of the drawing, please refer to The collection unit 30) of FIG. 1A performs collection. Preferably, the single substrate processing apparatus 1c further includes a fluid acceleration unit 50c, which is rotatably disposed on the base 10c and is disposed around the periphery of the fluid cleaning unit 40c. Among them, the fluid acceleration unit 50c can control the rotation speed and rotate relative to the substrate stage 20c. After receiving the processing liquid 100 that is discharged by the substrate stage 20c, the fluid acceleration unit 50c is further accelerated to rotate to discharge the processing solution 100 to the outside. The collection unit 30 (same as described above, please refer to FIG. 1A) to achieve the effect of effectively discharging the treatment liquid 100.
圖6係本發明之第二實施例之單基板處理裝置的示意圖，請參考圖6所示。第二實施例之單基板處理裝置1d用於對一基板90d進行校準。單基板處理裝置1d包括一底座10d、一基板載台20d以及一校準單元60d。基板載台20d同樣以固定軸21d連接於底座10d，而關於基板載台20d的元件結構及其連結關係，及基板載台20d承載並固定基板90d的作動，可參考第一實施例之基板載台20（20a、20b、20c），於此不加贅述。FIG. 6 is a schematic diagram of a single substrate processing apparatus according to a second embodiment of the present invention. Please refer to FIG. 6. The single substrate processing apparatus 1d of the second embodiment is used to calibrate a substrate 90d. The single substrate processing apparatus 1d includes a base 10d, a substrate stage 20d, and a calibration unit 60d. The substrate stage 20d is also connected to the base 10d by a fixed shaft 21d. For the component structure and connection relationship of the substrate stage 20d, and the operation of the substrate stage 20d to carry and fix the substrate 90d, refer to the substrate carrier of the first embodiment. The station 20 (20a, 20b, 20c) is not described in detail here.
本實施例之校準單元60d為光學檢測單元，其設置於底座10d，並位於基板載台20d上方，以對基板載台20d所承載並固定的基板90d進行校準。校準單元60d利用光學的方式檢測基板90d之定位，進行校準（例如可檢測全基板或檢測基板之邊緣），且校準單元60d可控制基板載台20d旋轉基板90d，以及位移基板載台20d，以對基板90d進行校準。其中，校準單元60d之光學檢測可設置單一光學元件（請參考圖6所示），亦可設置複數光學元件，例如光傳送元件搭配光接收元件，以達到對位之光學檢測（圖未示），本發明並不限制。The calibration unit 60d of this embodiment is an optical detection unit, which is disposed on the base 10d and located above the substrate stage 20d to calibrate the substrate 90d carried and fixed by the substrate stage 20d. The calibration unit 60d optically detects the positioning of the substrate 90d for calibration (for example, the entire substrate or the edge of the substrate can be detected), and the calibration unit 60d can control the substrate stage 20d to rotate the substrate 90d, and shift the substrate stage 20d to The substrate 90d is calibrated. Among them, the optical detection of the calibration unit 60d may be provided with a single optical element (refer to FIG. 6), or a plurality of optical elements may be provided, such as a light transmitting element and a light receiving element to achieve optical detection of alignment (not shown) The invention is not limited.
圖7係本發明之第二實施例之單基板處理裝置之另一實施態樣的上視圖，請參考圖7所示。本實施例之單基板處理裝置1e係用於對一基板90e進行校準，並可適用於具損傷之基板（例如基板具翹曲或異常凸起）。單基板處理裝置1e包括一底座10e、一基板載台20e以及一校準單元60e，同樣的，基板載台20e連接於底座10e，而關於其連接方式，以及基板載台20e的元件結構及其承載基板90e的作動，可參考第一實施例之基板載台20（20a、20b、20c），於此不加贅述。在本實施例中，校準單元60e為三個圓柱，並設置於底座10e。若基板90e無損傷，校準單元60e（三個圓柱）則可一次正確夾持基板90e，完成基板校準。若校準單元60e之三個圓柱無法一次皆正確夾持基板90e，則校準單元60e可控制基板載台20e旋轉基板90e，並對基板90e進行複數次夾持。具體而言，控制基板載台20e每旋轉基板90e一預設角度時，同時控制夾持單元（本實施例為三個圓柱）對基板90e進行一次夾持（因此，每旋轉一預設角度，則對基板90e進行一次夾持，分為複數次對基板90e進行校準）。在此須注意的是，該預設角度沒有特別限制，可依據需求決定，且校準單元60e控制基板載台20e旋轉的次數也不限，僅需進行到能完成基板90e之基板校準程序即可。FIG. 7 is a top view of another embodiment of the single substrate processing apparatus according to the second embodiment of the present invention. Please refer to FIG. 7. The single substrate processing apparatus 1e of this embodiment is used for calibrating a substrate 90e, and can be applied to a substrate with damage (for example, the substrate has warpage or abnormal protrusions). The single substrate processing apparatus 1e includes a base 10e, a substrate stage 20e, and a calibration unit 60e. Similarly, the substrate stage 20e is connected to the base 10e, and the connection method, the component structure of the substrate stage 20e, and its bearing For the operation of the substrate 90e, reference may be made to the substrate stage 20 (20a, 20b, 20c) in the first embodiment, and details are not described herein. In this embodiment, the calibration unit 60e is three cylinders and is disposed on the base 10e. If the substrate 90e is not damaged, the calibration unit 60e (three cylinders) can correctly hold the substrate 90e at one time to complete the substrate calibration. If the three cylinders of the calibration unit 60e cannot correctly hold the substrate 90e at one time, the calibration unit 60e can control the substrate stage 20e to rotate the substrate 90e and clamp the substrate 90e multiple times. Specifically, when the substrate stage 20e is controlled to rotate the substrate 90e by a preset angle, the clamping unit (three cylinders in this embodiment) is simultaneously controlled to clamp the substrate 90e once (thus, each time the preset angle is rotated, Then, the substrate 90e is clamped once, and the substrate 90e is calibrated into a plurality of times). It should be noted here that the preset angle is not particularly limited and can be determined according to requirements, and the number of times the calibration unit 60e controls the rotation of the substrate stage 20e is not limited. It only needs to be performed until the substrate calibration procedure of the substrate 90e can be completed. .
綜上所述，依據本發明之單基板處理裝置，不論是用於對基板進行濕式處理（第一實施例）或是進行校準（第二實施例），其皆包括底座及基板載台。其中，基板載台包括固定軸、承載部及緩衝結構，固定軸連接於底座，並具有氣壓通道，承載部具有與氣壓通道相互連通的通孔。緩衝結構設置於承載部，且緩衝結構的一表面對應於通孔，另一表面對應於基板，故當氣壓通道為負壓狀態時，可同時對緩衝結構產生負壓的吸引力，使緩衝結構往通孔的方向移動或壓縮。藉此可避免對基板產生額外的應力，以達到緩衝基板、避免基板破裂的效果，及兼具吸附固定基板。In summary, the single substrate processing apparatus according to the present invention, whether it is used for wet processing of a substrate (first embodiment) or calibration (second embodiment), includes a base and a substrate stage. The substrate stage includes a fixed shaft, a bearing portion, and a buffer structure. The fixed shaft is connected to the base and has a gas pressure channel. The bearing portion has a through hole communicating with the gas pressure channel. The buffer structure is disposed on the bearing portion, and one surface of the buffer structure corresponds to the through hole and the other surface corresponds to the substrate. Therefore, when the air pressure channel is in a negative pressure state, the negative pressure attraction to the buffer structure can be generated at the same time, so that the buffer structure Move or compress in the direction of the through hole. This can avoid generating additional stress on the substrate, to achieve the effects of buffering the substrate, avoiding the substrate cracking, and both adsorbing and fixing the substrate.
需注意的是，惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。It should be noted that the above are only the preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited in this way, that is, all such things as simple according to the scope of patent application and the content of the patent specification of the present invention, etc. Effect changes and modifications are still within the scope of the invention patent.
1、1c、1d、1e‧‧‧單基板處理裝置1, 1c, 1d, 1e‧‧‧ single substrate processing device
10、10c、10d、10e‧‧‧底座 10, 10c, 10d, 10e‧‧‧ base
20、20a、20b、20c、20d、20e‧‧‧基板載台 20, 20a, 20b, 20c, 20d, 20e‧‧‧ substrate stage
201b‧‧‧外側壁 201b‧‧‧outer wall
21、21b、21c、21d‧‧‧固定軸 21, 21b, 21c, 21d‧‧‧Fixed shaft
211、211b‧‧‧氣壓通道 211, 211b‧‧‧ Air Pressure Channel
212、212b‧‧‧開口 212, 212b‧‧‧ opening
22、22b‧‧‧承載部 22, 22b‧‧‧bearing department
221‧‧‧通孔 221‧‧‧through hole
23、23a、23b、23c‧‧‧緩衝結構 23, 23a, 23b, 23c‧‧‧ buffer structure
231、231a、231b‧‧‧可動式緩衝部 231, 231a, 231b ‧‧‧ movable buffer
232、232a、232b‧‧‧固定式緩衝部 232, 232a, 232b‧‧‧Fixed buffer
24‧‧‧控制單元 24‧‧‧Control unit
25b‧‧‧外環緩衝結構 25b‧‧‧Outer ring buffer structure
251b‧‧‧頂緣 251b‧‧‧Top margin
30‧‧‧收集單元 30‧‧‧ Collection Unit
40c‧‧‧流體清洗單元 40c‧‧‧fluid cleaning unit
50c‧‧‧流體加速單元 50c‧‧‧fluid acceleration unit
60d、60e‧‧‧校準單元 60d, 60e‧‧‧calibration unit
90、90b、90c、90d、90e‧‧‧基板 90, 90b, 90c, 90d, 90e‧‧‧ substrate
100‧‧‧處理液 100‧‧‧ treatment liquid
H1‧‧‧第一高度 H1‧‧‧First height
H2‧‧‧第二高度 H2‧‧‧Second Height
V‧‧‧負壓區域 V‧‧‧Negative pressure area
圖1A係本發明之第一實施例之單基板處理裝置之示意圖。 圖1B為圖1A所示之基板載體的立體示意圖。 圖2A為圖1所示之基板載台的放大圖。 圖2B為圖2A所示之氣壓通道於負壓狀態的示意圖。 圖3為圖2所示之緩衝結構之另一實施態樣的示意圖。 圖4為圖1A所示之基板載台之另一實施態樣的示意圖。 圖5為本發明之第一實施例之單基板處理裝置之另一實施態樣的示意圖。 圖6係本發明之第二實施例之單基板處理裝置的示意圖。 圖7係本發明之第二實施例之單基板處理裝置之另一實施態樣的上視圖。FIG. 1A is a schematic diagram of a single substrate processing apparatus according to a first embodiment of the present invention. FIG. 1B is a schematic perspective view of the substrate carrier shown in FIG. 1A. FIG. 2A is an enlarged view of the substrate stage shown in FIG. 1. FIG. 2B is a schematic diagram of the air pressure channel shown in FIG. 2A in a negative pressure state. FIG. 3 is a schematic diagram of another embodiment of the buffer structure shown in FIG. 2. FIG. 4 is a schematic diagram of another embodiment of the substrate stage shown in FIG. 1A. FIG. 5 is a schematic diagram of another embodiment of a single substrate processing apparatus according to the first embodiment of the present invention. FIG. 6 is a schematic diagram of a single substrate processing apparatus according to a second embodiment of the present invention. FIG. 7 is a top view of another embodiment of the single substrate processing apparatus according to the second embodiment of the present invention.
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2017
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- 2017-07-04 TW TW106122401A patent/TWI615336B/en active
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